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CP-307 Datasheet

Part Manufacturer Description PDF Type
CP307 Central Semiconductor Chip Form: SILICON DARLINGTON TRANSISTOR Original
CP3075 Lucas Semiconductors Transhield Silicon Surge Suppressor Diodes Scan
CP3075A Lucas Semiconductors Transhield Silicon Surge Suppressor Diodes Scan

CP-307

Catalog Datasheet MFG & Type PDF Document Tags

BF244 datasheet

Abstract: 2N5133 equivalent CP316 CP307 CP188 849 881 838 867 817/856 817 856 818 857 818/857 816/855 855 816 887 881 888 888 889 , P307 CP307 CP257 CP310 CP310 CP310 CP310 CP707 CP707 CP707 CP710 CP710 CP302 CP Z1 9 C PZ19 CP Z1 8 CP , CP305 CP192 CP592 CP705 CP716 CP316 CP307 CP307 CP310 CP310 CP707 CP208 CP608 CP314 CP714 CP191 CP268
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Original
BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 1N456 CPD64 1N456A 1N457 1N457A 1N458

CP592

Abstract: cmkt5088 PROCESS CP307 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18 , Fax: (631) 435-1824 www.centralsemi.com PROCESS CP307 Typical Electrical Characteristics
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OCR Scan
HD3595 KT2207 KT2907A KT3904 cmkt5088 z2l4 cmhd3595 ut3906 PTA44 2N7002 BAS56 BCX51 BCX53 BCX54 BZX84C2V4

SILICON TRANSISTOR CORP

Abstract: transistor PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 15 , PROCESS CP307 Typical Electrical Characteristics R6 (22-March 2010) w w w. c e n t r a l s e m i
Central Semiconductor
Original
2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 SILICON TRANSISTOR CORP transistor CHIP TRANSISTOR ny transistor

CP307

Abstract: 2N6426 Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY , Fax: (631) 435-1824 www.centralsemi.com PROCESS CP307 Typical Electrical Characteristics
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Original
CZTA14 MPSA13 MPSA14 MPSA27

MPSA13

Abstract: MPSA14 ) CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP191 CP192 CP305 CP307 CP309 , CPD88V CPD91V CPD92V CPD96V CP188V CP191V CP192V CP305V CP307V CP309V CP310V CP314V CP315V
Central Semiconductor
Original
mpsa13 central

CP588V

Abstract: CPD76 for this device, please see Process CP307 on page 839. R1 (26-September 2002) 708 Central
Central Semiconductor
Original
CP792 CP588V CP-392V CP315 CP317 CP318 CP324 CP355 CP392

transistor M 839

Abstract: Characteristic Data for this device, please see Process CP307 on page 839. R1 (01-Feb 2001) 674 Central
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transistor M 839 CZTA27 100MH

839 transistor

Abstract: PROCESS CP307 Small Signal Transistors NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area 5.3 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 15,440 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631
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839 transistor CZT900K

MPSA14

Abstract: 2N6426 Process CP307 on page 839. R2 (14-November 2002) 646 Central TM CXTA27 SURFACE MOUNT NPN
Central Semiconductor
Original
equivalent mpsa14

b 647 transistor

Abstract: transistor b 647 c , please see Process CP307 on page 839. R5 (20-February 2003) 43Q Central TM Semiconductor
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b 647 transistor transistor b 647 c

sot-23 MARKING CODE 431

Abstract: h a 431 transistor Process CP307/CP707, Please See Page 794/818. R4 (14-November 2002) 5 -) 2 Central
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sot-23 MARKING CODE 431 h a 431 transistor sot 23 marking code 431 transistor c 839 431 marking code sot transistor marking code 431 CMPTA27

SOT89 MARKING CODE

Abstract: Transistor and P N P Transistor, please see Process CP307 & CP707 on pages 839 & 868, respectively. R4 (14
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SOT89 MARKING CODE CXTA64 CP307/CP707

SU 179 transistor

Abstract: SOT89 marking SH Characteristic Data for NPN Transistor and PNP Transistor, please see Process CP307 & CP707 on pages 839 & 868
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OCR Scan
SU 179 transistor SOT89 marking SH

TRANSISTOR MARKING 707

Abstract: Transistor and PNP Transistor, please see Process CP307 & CP707 on pages 839 & 868, respectively. R4 (26
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TRANSISTOR MARKING 707 CZTA64

C2U SOT-89

Abstract: ,000 125 V V h MHz For Typical Electrical Characteristic Data for this Device Process CP307
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C2U SOT-89 CMPTA63 CMPTA64

sot-89 marking LC

Abstract: 187 transistor npn For Typical Electrical Characteristic Data for this Device Process CP307, Please See Page 794. R4
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sot-89 marking LC 187 transistor npn MARKING CODE JT SOT-89 marking se high voltage npn transistor SOT-89 darlington
Abstract: ­I Power Dissipation 10.0 ­10.0 100 *Tested in accordance with EIAJ Test Standard CP-307 , as specified by EIAJ Standard CP-307. The DAC uses a combination of segmented decoder and R , as specified by EIAJ Standard CP-307. REV. A IOUT DAC The input register and -
OCR Scan

YM3434

Abstract: SM5813AP Electronic Industries Association of Japan EIAJ CP-307 V 125 There are several specifications and , , EIAJ CP-307. Digital-to-Analog Converters Crystal World Tour Application Seminar Page 126 , Analog Output EIAJ CP-307 Signal-to-Noise Ratio Idle Channel Noise V 129 This specification , the Electronics Industries Association of Japan, EIAJ CP-307, and referred to as Signal-to-Noise
Analog Devices
Original
AD1856 AD1860 AD1861 AD1851 YM3434 SM5813AP YAMAHA DSP AD1851/AD1861 AD1851/

S4327

Abstract: CDB4303 Process CP307 on page 839. R4 (26-September 2002) Central TM Semiconductor Corp. CMPT6427
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Original
CS4303 CDB4303 S4327 AES17-1991 AES171991 S4331 CS8411/12

CP-307

Abstract: accordance with EIAJ Test Standard CP-307. Specifications subject to change without notice. REV. A A U , sine wave. This is measured with a standard Aweight filter as specified by EIAJ Standard CP-307. SIG , is mea­ sured with a standard A-weight filter as specified by EIAJ Standard CP-307. REV. A
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OCR Scan

AD1851

Abstract: SUPPLY Current +1 -I Power Dissipation ` Tested in accordance with EIAJ Test Standard CP-307 , by EIAJ Standard CP-307. SIGNAL-TO-NOISE RATIO The signal-to-noise ratio (SNR) is defined as the , CP-307. "f Figure 1. AD18S1/AD1861 F u nction al Block D iagram FUNCTIONAL DESCRIPTION The
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OCR Scan
WTTW16 SM5813AP/APT AD1851/ADI
Abstract: ­I Power Dissipation *Tested in accordance with EIAJ Test Standard CP-307. Specifications subject to , measured with a standard Aweight filter as specified by EIAJ Standard CP-307. SIGNAL-TO-NOISE RATIO The , filter as specified by EIAJ Standard CP-307. REV. A ­5­ AD1851/AD1861 Analog Circuit -
OCR Scan
AD18S1

YM3434

Abstract: ad1860 accordance with EIAJ Test Standard CP-307 with 18-bit data. Specifications subject to change without notice , AD1865 channel separation is measured in accordance with EIAJ Standard CP-307, Section 5.5. D-RANGE , input sine wave. This is measured with a standard A-Weight filter as specified by EIAJ Standard CP-307
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OCR Scan
Yamaha oversampling filter D1851 5813AP/APT

YM3434

Abstract: 741N MSB adjustment. *Tested in accordance with EIAJ Test Standard CP-307 with 18-bit data , Standard CP-307, Section 5.5. D-RANGE DISTORTION D-Range distortion is equal to the value of the total , filter as specified by EIAJ Standard CP-307. FUNCTIONAL DESCRIPTION The AD1865 is a complete
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Original
741N ym34 16-BIT 18-BIT 20-BIT AD1864 AD1862

NE5532- 34

Abstract: sm5818ap ) CPD48 CPD76 CPD78 CPD80 CPD83 CPD88 CPD91 CPD92 CPD96 CP188 CP191 CP192 CP305 CP307 CP309
Analog Devices
Original
NE5532- 34 sm5818ap CXD1244 AD1865-SPECIFICATIONS ne5532 thd measurements R2R network AD1868 C1468 N-24A

CXD1244

Abstract: sm5818ap optional MSB adjustm ent. â'¢T ested in accordance with EIAJ Test Standard CP-307 w ith 18-bit data , expressed in dB. For the AD 1864 channel separation is measured in accordance with EIAJ Standard CP-307 , specified by EIAJ Standard CP-307. GAIN ERROR The gain error specification indicates how closely the
Analog Devices
Original
npc SM5818 sm5818 npc SM5818 Digital Filter Yamaha Musical dg1114 NE5532 TOTAL HARMONIC distortion

sm5818ap

Abstract: SM5814AP units at fmal test w ithout optional MSB adjustment. *Tested in accordance with EIAJ T est Standard CP-307 , expressed in dB. For the AD1864 channel separation is measured in accordance with EIAJ Standard CP-307 , specified by EIAJ S tandard CP-307. GAIN ERROR T he gain error specification indicates how closely the
Analog Devices
Original
SM5814AP sm5814 AD1864N-K r2r dac audio SM5813 Yamaha Musical Instruments SONY/12S CXD1244S 16-PIN C1405

D1864

Abstract: Transistor and P N P Transistor, please see Process CP307 & CP707 on pages 839 & 868, respectively. R4 (14
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OCR Scan
D1864
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