NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: CHARACTERISTICS DIODE 1N4007 EAO Your Expert Partner for Human Machine Interfaces EAO Product Information Series Swisstac Switches and Indicators Swisstac Contents Swisstac Description . 3 Product Assembly . 4 Mounting instruction . ... | Original |
118 pages, |
swisstac Midget screw lampholder cable gland 852-2000 600-6000-W0 datasheet abstract |
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| Abstract: Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Thermal resistance , Max 1 5 50 1 (4) 1N4001/L 1N4001/L1N4007/L Vishay LiteOn Power Semiconductor Characteristics (Tj , 1N4001/L 1N4001/L1N4007/L Vishay LiteOn Power Semiconductor 1.0A Rectifier Features D Diffused , Conditions Type 1N4001/L 1N4001/L 1N4002/L 1N4002/L 1N4003/L 1N4003/L 1N4004/L 1N4004/L 1N4005/L 1N4005/L 1N4006/L 1N4006/L 1N4007/L Peak forward , C D Diode Capacitance ( pF ) IF Forward Current ( A ) 30 1.0 0.1 Tj = 25°C IF ... | Original |
4 pages, |
current rating of diode 1N4001 d 1n4007 1N4001 features of DIODE 1N4001 1n4004 bl current rating diode 1N4001 DIODE 1N4001 VALUE OF MAX CURRENT 1n4001 power diode 1N4007 marking CD DIODE 1N4001 WORKING surge current DIODE 1N4007 1N4007 RECTIFIER DIODE 1N4001/L 1N4007/L 1N4001/L abstract |
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| Abstract: SILICON RECTIFIER DIODE IA/IOO~IOOOV 1N4001 1N4001~1N4007 FEATURES • Miniature Size ° Low Forward , 1N4003 1N4003 1N4004 1N4004 1N4005 1N4005 1N4006 1N4006 1N4007 Repetitive Peak. Reverse Voltage RRM 50 100 200 400 600 , -40 to 150 Storage Temperature Range stg -40 to 150 ELECTRICAL B THERMAL CHARACTERISTICS Characteristics Peak Forward Voltage Peak Reverse Current Thermal Resistance Symbol "FM RM Rth(j-a) Test Condition IFM = 1.0A Ti = 25 °C VRM = VRRM Tj = 25°C 1N4001 1N4001 1N4003 1N4003 1N4004 1N4004 ~ 1N4007 Junction to ... | OCR Scan |
2 pages, |
IN4003 diode 1N4004 1N4003 1N4002 1n4001 power diode 1N4007 1N4001 IN4003 Diode 1N4002 1N4004 1N4007 DIODE 1N4001 rating LN4004 surge current DIODE 1N4007 DIODE 1N4001 1N4001 abstract |
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| Abstract: 1N4001 1N4001 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused , All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise , Reverse Voltage of 4.0V D.C. 1N4001 1N4001 1N4007 1 of 4 © 2006 Won-Top Electronics 1.0 10 , Typical Forward Characteristics 100 50 f = 1MHz 40 Cj, CAPACITANCE (pF) IFSM, PEAK , 1N4001 1N4001 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION TAPING SPECIFICATIONS ... | Original |
4 pages, |
diode 1N4005 specifications equivalent components of diode 1n4001 datasheet d 1n4007 1N4007 DO-41 package diode T3 Marking DIODE 1N4002 1N4001-1N4007 DIODE 4005 1N400X diode 1N 4002 DIODE 1N4001 WORKING diode 1N4007 anode terminal 1N4001 1N4007 1N4001 abstract |
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| Abstract: characteristics over temperature · Meets all Chinese USB charger specifications · Meets CISPR-22/EN55022 CISPR-22/EN55022 B , R3 and capacitor C5 form a snubber network across the secondary diode and reduce high frequency , and R9 exceeds the opto-coupler diode voltage drop and controls transitions from CV to CC operation , , 550 mA 8 1 mH D5 SS14 C3 1.2 nF 1 kV D1 1N4007 L RF1 8.2 2.5 W 90 - 264 VAC D3 1N4007 C1 4.7 F 400 V R2 330 4 FB N D4 1N4007 S Figure 1. ... | Original |
2 pages, |
TL431AI diode FR107 equivalent diode u2 40 DL4007 EE13 EN55022B 1N4007 SS14 specifications of 1n4007 diode pc817A optocoupler PC817A ee13 ferrite transformer LNK363 LNK363DN DI-135 DI-135 abstract |
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| Abstract: 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE 100 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS , SIZE OF DO-41 DO-41 PACKAGE Low cost SERIES 1N4001 1N4001 - 1N4007 DO - 41 Low leakage LL Low , 0.86 0.160 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature , 1N4001 1N4001 1N4002 1N4002 1N4003 1N4003 1N4004 1N4004 1N4005 1N4005 1N4006 1N4006 1N4007 Maximum DC Blocking Voltage VRM 50 Maximum , CHARACTERISTIC CURVES FOR SERIES 1N4001 1N4001 - 1N4007 50 40 30 Single Phase, Half wave, 60 Hz Resistive and ... | Original |
2 pages, |
1N4006 1N4005 1N4003 1N4007 1N4002 1N4001 current rating diode 1N4001 DIODE 1N4001 characteristics diode 1n4007 diotec 1N4004 diode H2 1N4001 general diode purpose CHARACTERISTICS DIODE 1N4007 1N4007 BL GPDP-101-1B GPDP-101-1B abstract |
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| Abstract: Formosa MS Silicon Rectifier 1N4001 1N4001 THRU 1N4007 List , Silicon Rectifier 1N4001 1N4001 THRU 1N4007 1.0A Leaded Type General Purpose Rectifiers - 50V-1000V , voltage 800 1N4007 A 600 1N4006 1N4006 A 100 1N4003 1N4003 Operating temperature T J, ( OC , Storage temperature SYMBOLS TYP. IR V R = V RRM T A = 100 OC Thermal resistance Diode , (1N4001 1N4001 THRU 1N4007) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD ... | Original |
6 pages, |
DIODE 1N4007 DATASHEET features of DIODE 1N4001 free download diode 1n4001 data sheet 1N4001 general diode purpose Diode Datasheet 1N4007 1N4007 formosa diode silicon diode 1N4001 specifications diode cross reference 1N4002 DIODE 1N4002 diode 1N4007 specifications diode 1N4005 specifications 1N4001 1N4007 1N4001 abstract |
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| Abstract: Certified Manufacturer STANDARD RECOVERY RECTIFIERS 1N4001 1N4001 - 1N4007 DO-41 DO-41 Axial Lead Plastic , ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION TEST CONDITION , 1N4001 1N4001_1N4007Rev030103E Continental Device India Limited Data Sheet Page 1 of 3 1N4001 1N4001 - 1N4007 DO-41 DO-41 Axial , DIODE AMMO PACK FE ED 6.0 ±1.0 52 ±2. .0 0 6.0 ±1.0 ±2.0 83.0 TAPES ±2 .0 , 1N4001 1N4001_1N4007Rev030103E Continental Device India Limited Data Sheet Page 2 of 3 Notes 1N4001 1N4001 - 1N4007 ... | Original |
3 pages, |
diode 4007 DATA specification SHEET 1n4007 do-41 4001 1n diode diode 1N4001 and application notes 1n 4004 diode diode 1N 4001 diode 1N 4004 j 4005 DIODE 1N4001 WORKING 1n4001 power diode DIODE 1N4001 CDIL CHARACTERISTICS DIODE 1N4007 QSC/L-000019 QSC/L-000019 abstract |
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| Abstract: 100k C9 Open R4 R 10 C10 CC 1nF R5 R 2.2 D1 Diode 1N4007 R6 R 47 D2 Diode 1N4007 R7 R 270 D3 Diode 1N4007 R8 R 0 D4 Diode 1N4007 R9 R , R6 R 47 C9 Open R7 R 270 C10 CC 1nF R8 R 0 D1 Diode 1N4007 R9 R 2k D2 Diode 1N4007 R10 R 560 D3 Diode 1N4007 R11 R 20k D4 Diode , Low-Power Green-Mode EZ-PSR without Secondary Feedback Electrical Characteristics Saw Limit ... | Original |
14 pages, |
Transformer EE-16 TL431 JESD22 A114 FSEZ2016NY advantages of 1N4007 C101 CC 1nF 7pin smps IC 1N4007 smps diode IC PC817 smps with tl431 and pc817 EE-16 hysteresis CHARACTERISTICS DIODE 1N4007 FSEZ2016 FSEZ2016 FSEZ2016 abstract |
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| Abstract: R 2.2 D1 Diode 1N4007 R6 R 47 D2 Diode 1N4007 R7 R 270 D3 Diode 1N4007 R8 R 0 D4 Diode 1N4007 R9 R 2k D5 Diode FR107 FR107 T1 Transformer EE-16 EE-16 D6 , 270 C10 CC 1nF R8 R 0 D1 Diode 1N4007 R9 R 2k D2 Diode 1N4007 R10 R 560 D3 Diode 1N4007 R11 R 20k D4 Diode 1N4007 R12 FSEZ2016 FSEZ2016 - Low-Power , Low-Power Green-Mode EZSWITCH without Secondary Side Feedback Circuitry Electrical Characteristics Saw ... | Original |
14 pages, |
TL431 1N4007 smps diode 1N4007 ZENER DIODE A114 advantages of 1N4007 C101 diode 1N4007 specifications dip smps ic pc817 datasheet DIP7 SMPS ezswitch pc817 fairchild marking code diode R12 L3 marking FSEZ2016 FSEZ2016 FSEZ2016 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| .9k C4 100nF R1 10k C3 10nF D1 1N4007 C2 22uF 400V L1 470uH D3 BYT01 BYT01 BYT01 BYT01 4 100nF R1 10k C3 10nF D1 1N4007 C1 22uF 400V L1 470uH D3 BYT01-400V BYT01-400V BYT01-400V BYT01-400V C the part number 1N4007. The energy stored in the bulk capacitor during the conduction time of the F R2 56k C3 2.2nF D1 1N4007 C2 22uF 400V L1 470uH D3 BYT01-400V BYT01-400V BYT01-400V BYT01-400V C5 33u DRAIN VDD - + U1 VIPer20 R3 3.9k C4 100nF 10k R2 C3 10nF D1 1N4007 C1 22 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7520.htm |
STMicroelectronics | 19/01/2001 | 32.28 Kb | HTM | 7520.htm |
| % 18 KOhms 1% 91 KOhms 1% 9.1 KOhms 1W 390 Ohms 5% 1N4007 100 pF 5% 33 m F 16V RADIAL AVS10CB AVS10CB AVS10CB AVS10CB / AVS12CB AVS12CB AVS12CB AVS12CB structure of the input diodes bridge in order to keep a same DC voltage range. When mains voltage increases integrated circuit has to be connected straightly with the A1 of the triac. In same way the supply diode rectifier and R1 have to be con- nected to the diode bridge (see typical applica- tion diagram). Triac = 1V rt = 45 mOhms The figure 1 of DC general characteristics of triac gives these losses PT versus I www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3572-v1.htm |
STMicroelectronics | 02/04/1999 | 6.9 Kb | HTM | 3572-v1.htm |
| % 18 KOhms 1% 91 KOhms 1% 9.1 KOhms 1W 390 Ohms 5% 1N4007 100 pF 5% 33 m F 16V RADIAL AVS10CB AVS10CB AVS10CB AVS10CB / AVS12CB AVS12CB AVS12CB AVS12CB structure of the input diodes bridge in order to keep a same DC voltage range. When mains voltage increases integrated circuit has to be connected straightly with the A1 of the triac. In same way the supply diode rectifier and R1 have to be con- nected to the diode bridge (see typical applica- tion diagram). Triac = 1V rt = 45 mOhms The figure 1 of DC general characteristics of triac gives these losses PT versus I www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3572-v2.htm |
STMicroelectronics | 14/06/1999 | 6.87 Kb | HTM | 3572-v2.htm |
| KOhms 1% 9.1 KOhms 1W 390 Ohms 5% 1N4007 100 pF 5% 33 m F 16V RADIAL AVS10CB AVS10CB AVS10CB AVS10CB / AVS12CB AVS12CB AVS12CB AVS12CB AVS1ACP the structure of the input diodes bridge in order to keep a same DC voltage range. When mains connected straightly with the A1 of the triac. In same way the supply diode rectifier and R1 have to be con- nected to the diode bridge (see typical applica- tion diagram). Triac control : Between pin 5 : VTO = 1V rt = 45 mOhms The figure 1 of DC general characteristics of triac gives these losses PT www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3572.htm |
STMicroelectronics | 20/10/2000 | 9.04 Kb | HTM | 3572.htm |
| Ohms 5% 1N4007 100 pF 5% 33 m F 16V RADIAL AVS08CB AVS08CB AVS08CB AVS08CB AVS1BCP08 AVS1BCP08 AVS1BCP08 AVS1BCP08 CI 8 PINS MINIDIP 3 PINS 3 PINS ST ST structure of the input diodes bridge in order to keep a same DC voltage range. When mains voltage increases integrated circuit has to be connected straightly with the A1 of the triac. In same way the supply diode rectifier and R1 have to be con- nected to the diode bridge (see typical applica- tion diagram). Triac characteristics of triac gives these losses PT. The external heatsink R TH can be also calculated with PT and www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3573-v2.htm |
STMicroelectronics | 14/06/1999 | 6.57 Kb | HTM | 3573-v2.htm |
| BL3 1 MOhms 1% 18 KOhms 1% 91 KOhms 1% 9.1 KOhms 1W 390 Ohms 5% 1N4007 100 pF 5% 33 m F 16V the input diodes bridge in order to keep a same DC voltage range. When mains voltage increases from connected straightly with the A1 of the triac. In same way the supply diode rectifier and R1 have to be con- nected to the diode bridge (see typical applica- tion diagram). Triac control : Between pin 5 calculate the losses, PT dissipated by the triac : Figure 1 of DC general characteristics of triac gives www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3573.htm |
STMicroelectronics | 20/10/2000 | 8.72 Kb | HTM | 3573.htm |
| Ohms 5% 1N4007 100 pF 5% 33 m F 16V RADIAL AVS08CB AVS08CB AVS08CB AVS08CB AVS1BCP08 AVS1BCP08 AVS1BCP08 AVS1BCP08 CI 8 PINS MINIDIP 3 PINS 3 PINS ST ST structure of the input diodes bridge in order to keep a same DC voltage range. When mains voltage increases integrated circuit has to be connected straightly with the A1 of the triac. In same way the supply diode rectifier and R1 have to be con- nected to the diode bridge (see typical applica- tion diagram). Triac characteristics of triac gives these losses PT. The external heatsink R TH can be also calculated with PT and www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3573-v1.htm |
STMicroelectronics | 02/04/1999 | 6.61 Kb | HTM | 3573-v1.htm |
| KOhms 1% 9.1 KOhms 1W 390 Ohms 5% 1N4007 100 pF 5% 33 m F 16V RADIAL AVS08CB AVS08CB AVS08CB AVS08CB AVS1BCP08 AVS1BCP08 AVS1BCP08 AVS1BCP08 on pin 8). This switch modifies automatically the structure of the input diodes bridge in order same way the supply diode rectifier and R1 have to be con- nected to the diode bridge (see typical triac : Figure 1 of DC general characteristics of triac gives these losses PT. The external heatsink RESISTANCE RESISTANCE RESISTANCE DIODE CONDENSATOR CONDENSATOR TRIAC INTEGRATED CIRCUIT www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3573-v3.htm |
STMicroelectronics | 25/05/2000 | 8.4 Kb | HTM | 3573-v3.htm |
| BL3 1 MOhms 1% 18 KOhms 1% 91 KOhms 1% 9.1 KOhms 1W 390 Ohms 5% 1N4007 100 pF 5% 33 on pin 8). This switch modifies automatically the structure of the input diodes bridge in order supply diode rectifier and R1 have to be con- nected to the diode bridge (see typical applica- tion Ohms The figure 1 of DC general characteristics of triac gives these losses PT versus I TRMS for this PRINTED CIRCUIT RESISTANCE RESISTANCE RESISTANCE RESISTANCE RESISTANCE DIODE CONDENSATOR www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3572-v3.htm |
STMicroelectronics | 25/05/2000 | 8.7 Kb | HTM | 3572-v3.htm |
| 237 0.997 7.7 111.0 106.5 96.0 300 449 237 0.994 11.2 111.0 106.5 96.0 8 3 BRIDGE 4 x 1N4007 R9 ". Figure 1. Multiplier Characteristics AN1214 AN1214 AN1214 AN1214 APPLICATION NOTE 2/6 Next, note where the Vcs and Vmult Crossing with High Capacitance FET and slow Turn-on Diode. The main reason for this effect is that near intrawinding capacitance) to turn the boost diode on. The turn-on speed of the boost diode adds to the problem also very effective. Also optimizing the diode can offer a positive contribution. A minimum junction www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6908.htm |
STMicroelectronics | 20/10/2000 | 14.38 Kb | HTM | 6908.htm |