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ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58315CRTZ-T13 Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ICM7218DIJIZ Intersil Corporation LED DRVR 64Segment 5V 28-Pin CDIP visit Intersil
ISL58315CRTZ-T7A Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy

CHARACTERISTICS DIODE 1N4007

Catalog Datasheet MFG & Type PDF Document Tags

CHARACTERISTICS DIODE 1N4007

Abstract: 1N4007 Electrical Characteristics Tj=25 Parameter Forward voltage Reverse current Diode capacitance Test Conditions , ~1N4007 Characteristics (Tj=25 unless otherwise specified) Tamb ­ Ambient temperature () IFSM ­ , 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage , 1N4007 Peak forward surge current Average forward current Storage temperature range TA=75 IFSM IFAV Tstg , cycles vs. ambient temperature CD ­ Diode capacitance (pF) IF ­ Forward current (A) VF ­
Excel Semiconductor
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CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics CHARACTERISTICS DIODE 1N4006 1N4007 OF DIODE DIODE 1N4001 VALUE OF MAX CURRENT 1N4007 rectifier diode 1N4002 1N4003 1N4004 1N4005 1N4006 DO-41

CHARACTERISTICS DIODE 1N4007

Abstract: 1N4007 BL Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Thermal resistance , Max 1 5 50 1 (4) 1N4001/L­1N4007/L Vishay Lite­On Power Semiconductor Characteristics (Tj , Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Rev. A2, 24-Jun-98 1N4001/L­1N4007 , 1N4001/L­1N4007/L Vishay Lite­On Power Semiconductor 1.0A Rectifier Features D Diffused , Conditions Type 1N4001/L 1N4002/L 1N4003/L 1N4004/L 1N4005/L 1N4006/L 1N4007/L Peak forward
Vishay Intertechnology
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1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl l4007 1N4007/L 4004/L 4007/L 88/540/EEC 91/690/EEC D-74025
Abstract: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage , V 1N4006 800 V 1N4007 1000 V IFSM 30 A IFAV 1 A Tstg -65 , =75â"ƒ Storage temperature range Electrical Characteristics Tj=25â"ƒ Parameter Test Conditions Type , =25â"ƒ IR 5 µA TA=100â"ƒ IR 50 µA VR=4V, f=1MHz CD Diode capacitance 15 , 1N4001~1N4007 IFAV â'" Average forward current (A) IFSM â'" Peak forward surge current (A Excel Semiconductor
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ka3525 12v to 230v inverters circuit diagrams

Abstract: smps circuit diagram 450w SB540 UF4007 1N4007 1N4148 Description Fairchild Power Switch (1.5A/70kHz) Zener Diode (3.9V , .14 10W Single Output Isolated Flyback using FSDM0265RN and Zener Diode , Reduce system cost · StealthTM Diode Co-Pack enhances recovery time · · · · 25% lower A * RDS , and reduce transformer/filter cost · Fastest switching IGBTs in the market today StealthTM Diode Co-Pack Diode Recovery Comparative Data · Avalanche energy rated · Offers soft recovery switching (S
Fairchild Semiconductor
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ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A E-171 18F-A 247TM

DIODE 1N4007 Functions

Abstract: CHARACTERISTICS DIODE 1N4007 Diode 1N4007 R6 R 47 D2 Diode 1N4007 R7 R 270 D3 Diode 1N4007 R8 R0 D4 Diode 1N4007 R9 R 2k D5 Diode FR107 T1 Transformer EE-16 D6 Diode FR102 U1 , D1 Diode 1N4007 R9 R 2k D2 Diode 1N4007 R10 R 560 D3 Diode 1N4007 R11 R 20k D4 Diode 1N4007 R12 R 20k D5 Diode FR107 R13 R 20k D6 Diode , Secondary Feedback Electrical Characteristics Saw Limit www.fairchildsemi.com 5 Unless
Fairchild Semiconductor
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DIODE 1N4007 Functions FSEZ2016 TL431 MS-001 MKT-N07CREV1

diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 1N4001 ­ 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused , All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise , Reverse Voltage of 4.0V D.C. 1N4001 ­ 1N4007 1 of 4 © 2006 Won-Top Electronics 1.0 10 , Typical Forward Characteristics 100 50 f = 1MHz 40 Cj, CAPACITANCE (pF) IFSM, PEAK , 1N4001 ­ 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION TAPING SPECIFICATIONS
Won-Top Electronics
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diode 1N4001 specifications free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 MIL-STD-202 1N4006-T3 5000/T 1N4006-TB 1N4007-T3 1N4007-TB

EE13 transformer 5v shield

Abstract: LNK363DN characteristics over temperature · Meets all Chinese USB charger specifications · Meets CISPR-22/EN55022 B , . Resistor R3 and capacitor C5 form a snubber network across the secondary diode and reduce high frequency , and R9 exceeds the opto-coupler diode voltage drop and controls transitions from CV to CC operation , , 550 mA 8 1 mH D5 SS14 C3 1.2 nF 1 kV D1 1N4007 L RF1 8.2 2.5 W 90 - 264 VAC D3 1N4007 C1 4.7 F 400 V R2 330 4 FB N D4 1N4007 S Figure 1
Power Integrations
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DI-135 LNK363DN EE13 transformer 5v shield EE13 NC-2H core EE13 5V power supply diode FR107 equivalent EE13 NC-2H core

1N4007 operating frequency

Abstract: CHARACTERISTICS DIODE 1N4007 SILICON RECTIFIER DIODE IA/IOO~IOOOV 1N4001~1N4007 FEATURES â'¢ Miniature Size ° Low Forward , 1N4003 1N4004 1N4005 1N4006 1N4007 Repetitive Peak. Reverse Voltage RRM 50 100 200 400 600 , -40 to 150 Storage Temperature Range stg -40 to 150 ELECTRICAL B THERMAL CHARACTERISTICS Characteristics Peak Forward Voltage Peak Reverse Current Thermal Resistance Symbol "FM RM Rth(j-a) Test Condition IFM = 1.0A Ti = 25 °C VRM = VRRM Tj = 25°C 1N4001 1N4003 1N4004 ~ 1N4007 Junction to
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OCR Scan
1N4007 operating frequency LN4007 diode ln4007 LN4004 diode surge current DIODE 1N4007 DIODE 1N4001 rating D00230T 000231G

diode 1N4001 specifications

Abstract: 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! , Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive , . Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C. 1N4001 â'" 1N4007 1 of 4 © 2006 , Current Derating Curve Fig. 2 Typical Forward Characteristics 100 50 f = 1MHz 40 Cj , Junction Capacitance 1N4001 â'" 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION
Won-Top Electronics
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1N4001-TB-LF

diode cross reference 1N4007

Abstract: Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List , Rectifiers 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Package outline , Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT PARAMETER T , 100 OC Thermal resistance Diode junction capacitance Junction to ambient *1 V RRM (V) f , 1N4007 700 50 O 50 CJ μA 15 -65 C/W pF +175 O C *1 Repetitive peak
Formosa MS
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diode cross reference 1N4007 DS-222111 MIL-STD-202F METHOD-208 METHOD-211A MIL-STD-750D METHOD-1038

DIODE 1N4007

Abstract: CHARACTERISTICS DIODE 1N4007 R3 R 100k C9 Open R4 R 10 C10 CC 1nF R5 R 2.2 D1 Diode 1N4007 R6 R 47 D2 Diode 1N4007 R7 R 270 D3 Diode 1N4007 R8 R 0 D4 Diode 1N4007 , Diode 1N4007 R9 R 2k D2 Diode 1N4007 R10 R 560 D3 Diode 1N4007 R11 R 20k D4 Diode 1N4007 R12 FSEZ2016 - Low-Power Green-Mode EZSWITCH without Secondary Side , Secondary Side Feedback Circuitry Electrical Characteristics Saw Limit www.fairchildsemi.com 5
Fairchild Semiconductor
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DIODE 1N4007 DIODE FR107 ezswitch diode,1N4007 pin configuration diode 1N4007 Diode -1N4007

CHARACTERISTICS DIODE 1N4007

Abstract: pin configuration diode 1N4007 2.2 D1 Diode 1N4007 R6 R 47 D2 Diode 1N4007 R7 R 270 D3 Diode 1N4007 R8 R 0 D4 Diode 1N4007 R9 R 2k D5 Diode FR107 T1 Transformer EE-16 D6 , 270 C10 CC 1nF R8 R 0 D1 Diode 1N4007 R9 R 2k D2 Diode 1N4007 R10 R 560 D3 Diode 1N4007 R11 R 20k D4 Diode 1N4007 R12 FSEZ2016 - Low-Power , Secondary Side Feedback Circuitry Electrical Characteristics Saw Limit www.fairchildsemi.com 5
Fairchild Semiconductor
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D4 diode top mark tl431 feedback voltage pc817 PC817 zener diode tv Diode Datasheet 1N4007 7pin smps IC MARKING CODE R7 DIODE

DO-41

Abstract: diode 1N4001 specifications Formosa MS Axial Leaded General Purpose Rectifiers 1N4001 THRU 1N4007 List List , Rectifiers 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Package outline , Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT PARAMETER T , resistance Diode junction capacitance Junction to ambient *1 V RRM (V) f=1MHz and applied 4V DC , 1N4004 400 280 400 1N4005 600 420 800 560 1N4007 700 O 50 CJ
Formosa MS
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METHOD-2031 METHOD-1027 METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2

1N4007 BL

Abstract: 1N400 . TYPICAL FORWARD CHARACTERISTIC PER DIODE 100 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS 1000 o , SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007 DO - 41 Low leakage LL Low , 0.86 0.160 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature , 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Maximum DC Blocking Voltage VRM 50 Maximum , CHARACTERISTIC CURVES FOR SERIES 1N4001 - 1N4007 50 40 30 Single Phase, Half wave, 60 Hz Resistive and
Diotec
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1N400 1N4001 general diode purpose current rating diode 1N4001 diode H2 OF 1N4001 DIODE features of DIODE 1N4001 GPDP-101-1B GPDP-101-2B

diode 1N4001 specifications

Abstract: 1N4001 rectifier Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List , 1N4007 1.0A Leaded Type General Purpose Rectifiers - 50V-1000V Package outline Features DO , resistance Diode junction capacitance Storage temperature SYMBOLS *1 V RRM (V) *3 VR (V , peak reverse voltage 800 1N4007 O 600 1N4006 μA 100 1N4003 Operating , curves (1N4001 THRU 1N4007) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE
Formosa MS
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1N4001 rectifier silicon diode 1N4001 specifications IL-STD-202F METHOD-1026 METHOD-1056 METHOD-1031 METHOD-215

diode 1n4007 diotec

Abstract: DIODE 1N4007 . TYPICAL FORWARD CHARACTERISTIC PER DIODE 100 FIGURE 4. TYPICAL REVERSE CHARACTERISTICS 1000 o , SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007 DO - 41 Low leakage LL Low , MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise , 1N4003 1N4004 1N4005 1N4006 1N4007 Maximum DC Blocking Voltage VRM 50 Maximum RMS Voltage , 1N4001 - 1N4007 50 40 30 Single Phase, Half wave, 60 Hz Resistive and Inductive Loads Lead
Diotec
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diode 1n4007 diotec 1N4007 diode

CHARACTERISTICS DIODE 1N4007

Abstract: diode 1N4001 specifications Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List , Date - Revision A Page. 6 Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 1.0A , uA C/W pF +175 O C *1 Repetitive peak reverse voltage 800 1N4007 A 600 , . IR V R = V RRM T A = 100 OC Thermal resistance Diode junction capacitance MIN. IO , - Revision A Page. 6 Rating and characteristic curves (1N4001 THRU 1N4007) FIG
Formosa MS
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data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 DIODE 1N4004 diode rectifier 1n4001 1n4007 diode datasheet METHOD-2036
Abstract: 1N4001 â'" 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused , All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25° unless otherwise , Reverse Voltage of 4.0V D.C. 1N4001 â'" 1N4007 1 of 4 © 2006 Won-Top Electronics 1.0 10 , Typical Forward Characteristics 100 50 f = 1MHz 40 Cj, CAPACITANCE (pF) IFSM, PEAK , 1N4001 â'" 1N4007 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION TAPING Won-Top Electronics
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diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 and characteristic curves (1N4001 THRU 1N4007) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD , Silicon Rectifier 1N4001 THRU 1N4007 List Formosa MS List , Rectifier 1N4001 THRU 1N4007 1.0A Axial Leaded General Purpose Rectifiers - 50V-1000V Features · Axial , gram Maximum ratings and Electrical Characteristics (AT PARAMETER Forward rectified current Forward , =1MHz and applied 4V DC reverse voltage Reverse current Thermal resistance Diode junction capacitance
Formosa MS
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Diode Marking 1N4004 1N4007 10A 1N4001 DIODE SPECIFICATIONS 1N4001 silicon THOD-208 METHOD-1021
Abstract: ® 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch(mm) â'¢ Low forward voltage drop â'¢ High , ) Absolute Maximum Ratings and Characteristics Ratings at 25 OC ambient temperature unless otherwise , by 20%. Symbols 1N4001 Parameter 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Units Maximum , ://www.thinkisemi.com/ 1N4001 thru 1N4007 ® Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http Thinki Semiconductor
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