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CGH402T350X3L Cornell Dubilier Electronics Inc Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 350V, 50% +Tol, 10% -Tol, 4000uF, Chassis Mount, CAN visit Digikey Buy
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CGH40 Datasheet

Part Manufacturer Description PDF Type
CGH40006P Cree RF FETs, Discrete Semiconductor Products, TRANS 8W RF GAN HEMT 440109 PKG Original
CGH40006P-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40006P Original
CGH40006S Cree RF FETs, Discrete Semiconductor Products, FET RF HEMT 6GHZ 28V 3X3QFN Original
CGH40006S-KIT Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, FET RF HEMT 28V 100MA 440203 Original
CGH40010 Cree 10 W, RF Power GaN HEMT Original
CGH40010F Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440166 PKG Original
CGH40010F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40010 Original
CGH40010P Cree RF FETs, Discrete Semiconductor Products, TRANS 10W RF GAN HEMT 440196 Original
CGH40025F Cree RF FETs, Discrete Semiconductor Products, TRANS 25W RF GAN HEMT 440166 PKG Original
CGH40025F Cree 25 W, RF Power GaN HEMT Original
CGH40025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40025 Original
CGH40035F Cree RF FETs, Discrete Semiconductor Products, TRANS 35W RF GAN HEMT 440193 PKG Original
CGH40035F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40035 Original
CGH40045 Cree 45 W, RF Power GaN HEMT Original
CGH40045F Cree RF FETs, Discrete Semiconductor Products, TRANS 45W RF GAN HEMT 440193 PKG Original
CGH40045F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40045 Original
CGH40090PP Cree RF FETs, Discrete Semiconductor Products, TRANS 90W RF GAN HEMT 440199 PKG Original
CGH40090PP-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40090 Original
CGH40120F Cree RF FETs, Discrete Semiconductor Products, TRANS 120W RF GAN HEMT 440193PKG Original
CGH40120F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40120 Original
Showing first 20 results.

CGH40

Catalog Datasheet MFG & Type PDF Document Tags

CGH40006P-TB

Abstract: RO5880 at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V S-parameter 28 V -2 16 -4 14 , 1.0 2.0 3.0 Small Signal Gain vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB , Frequency of the CGH40006P in the CGH40006P-TB Gain vs Output I VDD = 28 V,power, 2,3,4,5 & mA = 100 6 , as a Function of Frequency of the CGH40006P in the CGH40006P-TB Eff vs V, 2,3,4,5 100 VDD = 28Pout
Cree
Original
RO5880 CGH40006 006P JESD22 CGH40

J945

Abstract: Frequency at 28 V S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 , CGH40006S-TB 0 -2 -4 -6 -8 -10 Gain (dB) -12 -14 -16 -18 -20 -22 -24 -26 1.0 1.5 2.0 2.5 3.0 CGH40006S - , Frequency of the CGH40006S in the CGH40006S-TB VDD = 28 V, vs. IDQPout = 100 mA Gain 20 18 16 14 12 10 8 6 , Frequency of the CGH40006S in the CGH40006S-TB VDD = Gain 28 V, IDQ = 100 mA vs input power 14 12 10 , CGH40006S in the CGH40006S-TB Efficiency vs. Pin mA VDD =Drain 28 V, IDQ = 100 100% 90% 80% 70% 2.0 GHz 3.0
Cree
Original
J945
Abstract: S-parameter of the CGH40006S in the CGH40006S-TB 16 14 12 Gain (dB) 10 8 6 4 , CGH40006S-TB 0 -2 -4 -6 -8 Gain (dB) -10 -12 -14 -16 -18 -20 -22 CGH40006S - S11 -24 , as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD = 28 V, vs. Pout Gain IDQ = , ) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD , Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD Cree
Original
Abstract: CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 V, IDQ = 400 mA Gain, Efficiency, and Output Power vs Frequency of the CGH40045F measured in Amplifier Circuit CGH40045-TB VDD = 28 V, IDQ = , Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 V, IDQ = 400 mA, Freq , the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 V, IDQ = 400 mA 50 2.5GHz , Measured in CGH40045F-TB. 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency = POUT / PDC Cree
Original
40045P

CGH40045

Abstract: CGH40045-TB Simulated Small Signal Gain and Input Return Loss of CGH40045 Sparameters the CGH40045-TB vs Frequency , Performance Gain and Efficiency vs Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB , CW Output Power vs Input Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40045F-TB. 4 PSAT is , in Amplifier Circuit CGH40045-TB VDD = 28 V, IDQ = 400 mA 80 PSAT (W), Gain (dB), Drain
Cree
Original
AN 17821 A

STR W 5753 a

Abstract: str w 5753 mil 1 CGH40010F or CGH40010P 1 J3,J4 Q1 CGH40010-TB Demonstration Amplifier Circuit , of the CGH40010 in the CGH40010-TB S parameters Gain (dB), Return Loss (dB) 20 3.4 GHz , , and Drain Efficiency vs Frequency of the CGH40010F in the CGH40010-TB VDD VDD = 28 V,IDQ = 200 mA = , in CGH40010-TB. 3 PSAT is defined as IG = 0.36 mA. 4 Drain Efficiency = POUT / PDC Copyright , 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/wireless CGH40010-TB
Cree
Original
STR W 5753 a str w 5753 str 5753 2827 10UF 470PF 40010P

CGH40006P

Abstract: 1878 TRANSISTOR Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V 20 18 16 14 12 Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V 0 -2 -4 -6 -8 , Frequency at 20 V of the CGH40006P in the CGH40006P-TB S-parameter 20 V 20 18 16 14 12 Input & Output Return Losses vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB S-parameter 20 V 0 -2 -4 -6 -8 , Frequency of the CGH40006P in the CGH40006P-TB Gain= vs 28 Output 2,3,4,5 & mA 6 GHz V V,power, IDQ = 100 DD
Cree
Original
1878 TRANSISTOR CGH4000
Abstract: Performance Small Signal Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V , the CGH40006P in the CGH40006P-TB 5.0 6.0 7.0 Input & Output Return Losses vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB S-parameter 20 V S-parameter 20 V 0 18 , Power Gain vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB Gain vs Cree
Original

str 8656

Abstract: str g 8656 J1 HEADER RT>PLZ .1CEN LK 5POS 1 Q1 CGH40010F or CGH40010P 1 J3,J4 CGH40010F-TB , 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Schematic CGH40010-TB Demonstration Amplifier Circuit Outline 3-000537 REV 2 CGH40010-TB Copyright © 2006-2007 Cree, Inc. All rights reserved. The information in this , : +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Bill
Cree
Original
str 8656 str g 8656 str 6353 str 6308 05852 8627

str w 6554 a

Abstract: CGH40010 Large Signal Model CGH40010 in the CGH40010-TB S parameters 20 3.4 GHz 14.9 dB 3.8 GHz 14.31 dB Gain (dB), Return , Frequency of the Psat, Gain, and Drain Efficiency vs Frequency of the CGH40010F in the CGH40010-TB CGH40010F in the CGH40010-TB VDD VDD = 28 V, = 200 mA = 28 V,I IDQ DQ = 200 mA 80 17 Efficiency 70 , 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40010-TB. 3 PSAT is defined , should be used to maintain amplifier stability. CGH40010 Power Dissipation De-rating Curve CGH40010F
Cree
Original
str w 6554 a CGH40010 Large Signal Model str w 6554 CGH40015 CGH40015F STR 6554 a

RO5880

Abstract: CGH40006S at 28 V S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 , CGH40006S-TB 0 -2 -4 -6 -8 -10 Gain (dB) -12 -14 -16 -18 -20 -22 -24 -26 1.0 1.5 2.0 2.5 3.0 CGH40006S - , CGH40006S in the CGH40006S-TB VDD = 28 V, vs. IDQPout = 100 mA Gain 20 18 16 14 12 10 8 6 4 2 0 20 22 24 26 , ) Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD , CGH40006S in the CGH40006S-TB VDD = Gain 28 V, IDQ = 100 mA vs input power 14 12 10 Gain (dB) 8
Cree
Original
48 Ohms Resistors CGS transistor 0879

cgh40006p

Abstract: RO5880 at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V S-parameter 28 V -2 16 -4 14 , 1.0 2.0 3.0 Small Signal Gain vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB , Frequency of the CGH40006P in the CGH40006P-TB Gain vs Output I VDD = 28 V,power, 2,3,4,5 & mA = 100 6 , as a Function of Frequency of the CGH40006P in the CGH40006P-TB Eff vs V, 2,3,4,5 100 VDD = 28Pout
Cree
Original
J427 Cree Microwave

CGH40010F

Abstract: str w 6554 of the Psat, Gain, and Drain Efficiency vs Frequency of the CGH40010F in the CGH40010-TB CGH40010-TB CGH40010F in the VDD VDD = 28 V,IDQ = 200 mA = 28 V, IDQ = 200 mA 17 70 Efficiency , Measured on wafer prior to packaging. 2 Measured in CGH40010-TB. 3 PSAT is defined as IG = 0.36 mA. 4 , CGH40010-TB S parameters Gain (dB), Return Loss (dB) 20 3.4 GHz 14.9 dB 3.8 GHz 14.31 dB 3.6 , CGH40010 Rev 3.0 K Factor MAG (dB) Simulated Maximum Available Gain and K Factor of the CGH40010F
Cree
Original
str f 6554 transistor RF S-parameters str 6554 which can vary hemt .s2p g28V str 6554

CGH40045

Abstract: of CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 V, IDQ = 400 mA Gain, Efficiency, and Output Power vs Frequency of the CGH40045F measured in Amplifier Circuit CGH40045-TB VDD = 28 V , CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 V, IDQ = 400 mA, Freq = 2.5 GHz 20 60% 18 , CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 V, IDQ = 400 mA 2.5GHz 45 2.4GHz 2.6GHz , registered trademarks of Cree, Inc. 8 CGH40045 Rev 3.3 CGH40045-TB Demonstration Amplifier Circuit
Cree
Original

CGH40006

Abstract: f 14019 amplifier Small Signal Gain vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB Input & Output Return Losses vs Frequency at 28 V of the CGH40006P in the CGH40006P-TB S-parameter 28 V S-parameter 28 V , CGH40006P in the CGH40006P-TB 5.0 6.0 7.0 Input & Output Return Losses vs Frequency at 20 V of the CGH40006P in the CGH40006P-TB S-parameter 20 V S-parameter 20 V 0 18 -2 16 , Gain vs Output Power as a Function of Frequency of the CGH40006P in the CGH40006P-TB Gain vs Output I
Cree
Original
f 14019 amplifier transistor j352 J352 16649

Cree Microwave

Abstract: CGH40010F or CGH40010P 1 J3,J4 CGH40010F-TB Demonstration Amplifier Circuit Copyright  , : +1.919.313.5778 www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Schematic CGH40010-TB Demonstration Amplifier Circuit Outline 3-000537 REV 2 CGH40010-TB Copyright © 2006-2007 Cree, Inc , www.cree.com/wireless CGH40010-TB Demonstration Amplifier Circuit Bill of Materials Designator R1,R2 , Dimensions CGH40010F (Package Type ­â'" 440166) PRELIMINARY Product Dimensions CGH40010P (Package Type
Cree
Original
Abstract: S-parameter of the CGH40006S in the CGH40006S-TB 14 12 10 Gain (dB) 8 6 4 CGH40006S - , Input & Output Return Losses vs Frequency at S-parameter 28 V of the CGH40006S in the CGH40006S-TB 0 -2 , Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB VDD =EFF 28 vs V,output IDQ , ) Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-TB , (GHz) 4.5 5.0 5.5 6.0 Output Power vs Frequency of the CGH40006S in the CGH40006S-TB at PIN = 32 dBm Cree
Original

CGH40045-TB

Abstract: CGH40045 and Input Return Loss of CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 V, IDQ = 400 mA , Gain and Efficiency vs Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , Tone CW Output Power vs Input Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , CGH40045 Rev 3.4 CGH40045-TB Demonstration Amplifier Circuit Schematic CGH40045-TB Demonstration , Scaled from PCM data. 3 Measured in CGH40045F-TB. 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency =
Cree
Original

CGH40045

Abstract: and Input Return Loss of CGH40045 Sparameters the CGH40045-TB vs Frequency VDD = 28 V, IDQ = 400 mA , Gain and Efficiency vs Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , Tone CW Output Power vs Input Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB VDD = 28 , CGH40045 Rev 3.4 CGH40045-TB Demonstration Amplifier Circuit Schematic CGH40045-TB Demonstration , Scaled from PCM data. 3 Measured in CGH40045F-TB. 4 PSAT is defined as IG = 1.08 mA. 5 Drain Efficiency =
Cree
Original

CGH40010F

Abstract: str w 6554 a , RO4350B, Er = 3.48, h = 20 mil 1 CGH40010F or CGH40010P 1 J3,J4 Q1 CGH40010-TB , CGH40010 in the CGH40010-TB S parameters Gain (dB), Return Loss (dB) 20 3.4 GHz 14.9 dB 3.8 , CGH40010F in the CGH40010-TB CGH40010-TB CGH40010F in the VDD VDD = 28 V,IDQ = 200 mA = 28 V, IDQ = 200 , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in CGH40010-TB. 3 PSAT is , should be used to maintain amplifier stability. CGH40010 Power Dissipation De-rating Curve CGH40010F
Cree
Original
50GHZ cree rf str f 6259
Abstract: CGH40006P 6 W, RF Power GaN HEMT Creeâ'™s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a Package Type s: 440109 PNâ'™s: CGH40 006P Cree
Original
Abstract: CGH40006P 6 W, RF Power GaN HEMT Creeâ'™s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a Package Type s: 440109 PNâ'™s: CGH40 006P Cree
Original
Showing first 20 results.