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CGH35060F1-TB

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 13.1 dB Input Return Loss Note: Measured in the CGH35060F1-TB amplifier circuit, under 802.16 , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F1-TB test fixture , Amplifier Circuit CGH35060F1-TB, VDD = 28 V, IDQ = 250 mA S21 16 0 14 -2 S21 -6 8 -8 , CGH35060F1-TB, VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR = 9.8 dB 16 32% 15 30% 14 28 , (dBm) Typical EVM and Efficiency vs Output Power of CGH35060F1 and CGH35060P1 in the CGH35060F1-TB Cree
Original
CGH35060F CGH3506 CGH35 060P1

16312 transistor

Abstract: CGH35060F1-TB 3.4 GHz 12.2 1.82 1.83 23.1 10.3 Note: Measured in the CGH35060F1-TB amplifier circuit, under , Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F1-TB test fixture. 3 Under , CGH35060F1-TB, VDD = 28 V, IDQ = 250 mA S21 16 0 14 S21 -2 12 -4 10 -6 S21 (dB) 8 , Drain Efficiency and Gain vs Output Power of the CGH35060F1 and CGH35060P1 in the CGH35060F1-TB, VDD = , CGH35060P1 in the CGH35060F1-TB, VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB 5.2 4.8 4.4 4.0 3.6
Cree
Original
16312 transistor
Abstract: 13.1 dB Input Return Loss Note: Measured in the CGH35060F1-TB amplifier circuit, under 802.16 , CGH35060F1-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst , Amplifier Circuit CGH35060F1-TB, VDD = 28 V, IDQ = 250 mA S21 16 0 14 -2 S21 -6 8 -8 , CGH35060F1-TB, VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR = 9.8 dB 16 32% 15 30% 14 28 , (dBm) Typical EVM and Efficiency vs Output Power of CGH35060F1 and CGH35060P1 in the CGH35060F1-TB Cree
Original