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CGH3506

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 39 dBm, and Efficiency vs Frequency of CGH35060F in Broadband Amplifier Circuit (CGH35060F-TB) VDD = , Circuit (CGH35060F-TB), VDD = 28 V, IDQ = 250 mA CGH35060F TB Small Signal Performance DB(|S(2,1 , Efficiency vs POUT from 3.3 to 3.7 GHz of CGH35060F in Broadband Amplifier Circuit CGH35060F-TB 30% 10 , CGH35060F-TB Demonstration Amplifier Circuit Outline J1 CGH35060F - TB 3.4- 3.6 GHZ 3-000554 , : Measured in the CGH35060F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Cree
Original
CGH3506

CGH35060

Abstract: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree's CGH35060F2/P2 is a gallium , GHz 11.5 46.7 10.1 62.0 -4.3 Units dB dBm dBm % dB Note: Measured in the CGH35060F2-TB amplifier , prior to packaging. 2 Measured in the CGH35060F2-TB test fixture. 3 100 µS Pulse Width at 20% Duty Cycle , Performance Small Signal Gain and Return Losses vs Frequency of the CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ , Frequency of the CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA, Pulse Width = 100 µsec, Duty Cycle = 20
Cree
Original
CGH35060 CGH35060F2/P2 CGH35 060P2
Abstract: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Creeâ'™s CGH35060F2/P2 is a gallium , -7.3 -17.0 -4.3 dB Note: Measured in the CGH35060F2-TB amplifier circuit, under 100 µsec , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F2-TB test fixture , CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA 20 15 10 S11,S21, S22 (dB) 5 0 -5 -10 -15 , (GHz) Output Power, Gain and Drain Efficiency vs Frequency of the CGH35060F2 and CGH35060P2 VDD = Cree
Original

CGH35060F

Abstract: CGH35060 the CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR = 9.8 dB 16 15 14 , Efficiency vs Output Power of CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR , 3.4 GHz 12.2 1.82 1.83 23.1 10.3 Note: Measured in the CGH35060F-TB amplifier circuit, under 802.16 , Measured in the CGH35060F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 , CGH35060F-TB, VDD = 28 V, IDQ = 250 mA S21 16 0 14 S21 -2 12 -4 10 -6 S21 (dB) 8
Cree
Original

Tantalum

Abstract: CGH35060F-TB CGH35060F in Broadband Amplifier Circuit CGH35060F-TB, VDD = 28 V, IDQ = 250 mA S21 16 0 14 -2 , Performance Drain Efficiency and Gain vs Power Output of the CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = , Efficiency versus Power Output of CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM , 10.3 12.5 13.1 dB Input Return Loss Note: Measured in the CGH35060F-TB amplifier , prior to packaging. 2 Measured in the CGH35060F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz
Cree
Original
Tantalum j121 10UF 470PF CGH35060-TB s-parameter
Abstract: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Creeâ'™s CGH35060F2/P2 is a gallium , -7.3 -17.0 -4.3 dB Note: Measured in the CGH35060F2-TB amplifier circuit, under 100 µsec , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F2-TB test fixture , CGH35060F2 and CGH35060P2 VDD = 28 V, IDQ = 200 mA 20 15 10 S11,S21, S22 (dB) 5 0 -5 -10 -15 , (GHz) Output Power, Gain and Drain Efficiency vs Frequency of the CGH35060F2 and CGH35060P2 VDD = Cree
Original

CGH35060

Abstract: CGH35060F Efficiency and Gain vs Output Power of the CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA , Power Output of CGH35060F in the CGH35060F-TB VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB , 10.3 12.5 13.1 dB Input Return Loss Note: Measured in the CGH35060F-TB amplifier , prior to packaging. 2 Measured in the CGH35060F-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz , Broadband Amplifier Circuit CGH35060F-TB, VDD = 28 V, IDQ = 250 mA S21 16 0 14 -2 S21 -6
Cree
Original
JESD22

16312 transistor

Abstract: CGH35060F1-TB Drain Efficiency and Gain vs Output Power of the CGH35060F1 and CGH35060P1 in the CGH35060F1-TB, VDD = , and CGH35060P1 in Broadband Amplifier Circuit CGH35060F-TB, VDD = 28 V, IDQ = 250 mA 6.0 5.5 5.0 4.5 , CGH35060P1 in the CGH35060F1-TB, VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB 5.2 4.8 4.4 4.0 3.6 , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , 3.4 GHz 12.2 1.82 1.83 23.1 10.3 Note: Measured in the CGH35060F1-TB amplifier circuit, under
Cree
Original
16312 transistor 060P1
Abstract: (dBm) Typical EVM and Efficiency vs Output Power of CGH35060F1 and CGH35060P1 in the CGH35060F1-TB , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , 13.1 dB Input Return Loss Note: Measured in the CGH35060F1-TB amplifier circuit, under 802.16 , Characteristics Notes: 1 Measured on wafer prior to packaging. 2 Measured in the CGH35060F1-TB test fixture , trademarks of Cree, Inc. 2 CGH35060F1 / CGH35060P1 Rev 1.2 Cree, Inc. 4600 Silicon Drive Durham Cree
Original
Abstract: (dBm) Typical EVM and Efficiency vs Output Power of CGH35060F1 and CGH35060P1 in the CGH35060F1-TB , CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access , 13.1 dB Input Return Loss Note: Measured in the CGH35060F1-TB amplifier circuit, under 802.16 , CGH35060F1-TB test fixture. 3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst , registered trademarks of Cree, Inc. 2 CGH35060F1 / CGH35060P1 Rev 1.1 Cree, Inc. 4600 Silicon Drive Cree
Original

CGH09120F

Abstract: CGH25120F 440196 CGH35030F 3.3 to 3.9 GHz 28 V 4W 12 dB -34 dB 25 % 440166 CGH35060F
Cree
Original
CDPA21480 CGH21240F CGH09120F CGH25120F ofdm predistortion CGH27060F 440117 900MH