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CGH21240F

Catalog Datasheet MFG & Type PDF Document Tags

CGH21240F

Abstract: transistor 17556 Pulsed Saturated Power and Drain Efficiency vs Frequency of the CGH21240F measured in CGH21240F-TB , Performance Typical Small Signal Gain and Return Loss vs Frequency of the CGH21240F measured in CGH21240F-TB , the CGH21240F measured in CGH21240F-TB Amplifier Circuit. Single Channel WCDMA 6.5dB PAR with CFR VDS , , h = 20 mil CGH21240F Qty 1 1 1 1 1 2 3 3 1 2 2 1 1 2 2 1 1 1 CGH21240F-TB Demonstration , CGH21240F-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping, PAR = 8.81 dB @ 0.01 %
Cree
Original
transistor 17556 CGH2124

CGH21240F

Abstract: transistor 17556 Frequency of the CGH21240F measured in CGH21240F-TB Amplifier Circuit. = 28 V, IDS = 1.0 A, PSAT = 20 mA , vs Frequency of the CGH21240F measured in CGH21240F-TB Amplifier Circuit. VDS = 28 V, IDS = 1.0 A , of the CGH21240F measured in CGH21240F-TB Amplifier Circuit. Single Channel WCDMA 6.5dB PAR with CFR , - CGH21240F 1 CGH21240F-TB Demonstration Amplifier Circuit Copyright © 2009-2010 Cree , Efficiency @ 46 dBm 30.5 32.7 32.9 33.8 % Note: Measured in the CGH21240F-TB amplifier
Cree
Original
17556 transistor ATC600F ATC600S 13707 JESD22 RO4350
Abstract: Input Power of the CGH21240F measured in CGH21240F-TB Amplifier Circuit. = 28 V, IDS = 1.0 A, Freq = , Power of the CGH21240F measured in CGH21240F-TB Amplifier Circuit. 3GPP Test Model 1, 64 DPCH 67 % , CGH21240F measured in CGH21240F-TB Amplifier Circuit. Single Channel WCDMA 6.5dB PAR with CFR VDS = 28 V , DPD Linearizer of the CGH21240F measured in CGH21240F-TB Amplifier Circuit. Single Channel WCDMA , , RO4350, Er = 3.48, h = 20 mil 1 - CGH21240F 1 J3 CGH21240F-TB Demonstration Amplifier Cree
Original

ATC600S

Abstract: CGH2124 Power, Drain Efficiency, and Gain vs Input Power of the CGH21240F measured in CGH21240F-TB Amplifier , Drain Efficiency vs Output Power of the CGH21240F measured in CGH21240F-TB Amplifier Circuit. 3GPP , Efficiency vs Output Power of the CGH21240F measured in CGH21240F-TB Amplifier Circuit. Single Channel , Output Power (dBm) WCDMA Linearity with DPD Linearizer of the CGH21240F measured in CGH21240F-TB , - PCB, RO4350, Er = 3.48, h = 20 mil 1 - CGH21240F 1 CGH21240F-TB Demonstration
Cree
Original

Gan on silicon transistor

Abstract: CDPA21480 such as the latest CGH21240F that deliver 240 watts at 4 GHz, and GaN HEMT-based MMICs that deliver 3 , CGH21240F GaN HEMT power amplifier supports Cree's commitment to "HIGH GaN RF POWER". engineers more
Cree
Original
Gan on silicon transistor CDPA21480 Microwave Devices NONLINEAR MODEL LDMOS silicon carbide digital Pre-distortion

CGH09120F

Abstract: CGH25120F Gallium Nitride (GaN) HEMT Transistors for BTS Applications Cree's Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR UMTS of -10 2.11 GHz Pre DPD the -20 pre-distortion -30 , 440162 CGH21240F 1.8 to 2.3 GHz 28 V 215 W 15 dB -35 dB 65 % 440117 Part
Cree
Original
CGH09120F CGH25120F ofdm predistortion CGH27060F 440117 CGH55030F 900MH