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CFY30 Datasheet

Part Manufacturer Description PDF Type
CFY30 Infineon Technologies FET, GaAs FET For Oscillators Up To 12 GHz Original
CFY30 Infineon Technologies Low Noise GaAs FET Original
CFY30 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
CFY30 Siemens GaAs FET Original
CFY30 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
CFY30 N/A Shortform Datasheet & Cross References Data Scan

CFY30

Catalog Datasheet MFG & Type PDF Document Tags

SIEMENS 230 92 O

Abstract: siemens gaas fet SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fm jn = 1.4 dB @ 4 G H z) * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted , (tape and reel) Pin Configuration 1 2 3 4 Package 1) CFY30 A2 Q62703-F97 S D S G , 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA , -11 -17 -22 -27 -32 -37 -42 -46 -50 -53 -56 -58 -60 -63 CFY30 f GHz 0.1 0.4 0.8 1.2 1.6 2.0 2.4
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OCR Scan
SIEMENS 230 92 O siemens gaas fet siemens 230 99 o siemens 230 98 O gaas fet marking a CFY 18

62703-F

Abstract: siemens gaas fet BSE D GaAs FET fl2 3 b3 2ü SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS T " '3 1 CFY30 · , 924 Siemens 32E D Ö23b320 0G17350 Q « S I P CFY30 SIEMENS/ SPCL-. SEMICONDS T , +]50 -J50 Siemens 925 32E D Ô23b320 0017351 2 H S I P CFY30 T- 31- 25 , ÜQ173S2 4 H S I P CFY30 SIEMENS/ SPCL-. SEMICONDS -Common Source S , 85 928 Siemens 32E D Ô23b320 0017354 a « S I P CFY30 SIEMENS/ SPCLi SEMICONDS T
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OCR Scan
62703-F GaAs FET cfy 19 T-31-25 Q173S T--31--25 GG173S7

CFY30

Abstract: CFY 18 SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fw, = 1.4 dB @ 4 G H z ) * High gain , 1542 01.96 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA D , ] Semiconductor Group 1543 01.96 SIEMENS GaAs FET CFY30 Output characteristics l0 = f (VD S , SIEMENS GaAs FET CFY30 Typical Common Source S-Parameters ID = 15 mA f GHz 0.1 0.4 0.8 1.2 1.6 , Group 1545 01.96 SIEMENS GaAs FET CFY30 Typical Common Source S-Parameters lD = 30
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OCR Scan

HF-transistoren

Abstract: mS F dB / GHz dB M AG dB P-\ d B dBm CFY30 5 -4 . +0.5 80 250
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OCR Scan
HF-transistoren 1005S 1009S 1012S

BF963

Abstract: BF544 2 2 BF544 BF987 GaAsFETs Type M axim um Ratings Characteristics (T.=25°C) Case V CFY30
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OCR Scan
BF930 BF993 BF998 BF963 BF964S BF961 triode sot23 BF965 BF96 BF994S BF995 BF996S BF997

P-SOT-143

Abstract: G69 marking t »c h n o !o g i ss Infineon GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type BGV 503 BGV 903 CF 739 CF 750 CFH 120-08 CFH 120-10 CFH 400 CFH 400T CFH 800 CFH 800T CFY30 CFY 35-20 CFY 35-23 CGB 91 CGB 191 CGB 240 CGM 20G CGM 800C CGM 1900C CGY 50 CGY 59W CGY 60 CGY 62 CGY 63 CGY 96 CGY 98 CGY 99 CGY 121 A CGY 121 B Data Book Marking BGV 503 BGV 903 MSs MX H3s H4s N4s N4s N8s N8s A2 NA NB CGB 91 CGB 191 CGB 240 on request CGM 800C
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OCR Scan
Q62702-F1215 P-SOT143-4-1 P-SOT343-4-1 P-SOT-143 G69 marking Type CF 739 Marking Ordering Code MSs Q62702-L0132 Q62702-L0131 Q62702-F1391 Q62705-K0603 Q62705-K0604

CFY19-22

Abstract: Dual-Gate* bf981  ,-5v.i+ö:p. 80 40 45 250 â'¢ - 0 CFY 25-23 80 250 40 0 CFY30 , >5 80
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OCR Scan
CFY19-22 Dual-Gate* bf981 CFY19 BF1012 BF981 SCTP443 BF988 BF966S

5N521

Abstract: CFY30 0.50 0.50 - S em iconductor Group 277 SIEM ENS CFY30 C o m m on S o u rce S P a ra m
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OCR Scan
5N521

Siemens MOSFET S100

Abstract: SBMT2222A Package Page SOT-143 917 GaAs FETs Type CFY30 Max. riatings - Vos ^os V V 5 - 4 . + 0.5
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OCR Scan
Siemens MOSFET S100 SBMT2222A 682 SOT-23 RF Transistors sot-23 AL25-100 sod-123 4007 BGX50A BB419 BB512 BB515 BB619 BB620

c639

Abstract: C63716 63 BSS 64 BSS 79B BSS 79C BSS 80B BSS 80C BSS 81B BSS81C BSS 82B BSS 82C CF 739 CF 750 CFY30 CFY
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OCR Scan
c639 C63716 MARKING 68W SOT-23 sot-23 MARKING 636 C337 40 C-639 14-099R BCR169S BB619C

D1279

Abstract: BFT65 1.8 F dB 1.8 1.9 GaAs FETs Type Description Characteristics (7A=25 °C ) mA CFY30 CFY 35-20
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OCR Scan
D1279 BFT65 diode a811 Siemens Halbleiter D1275 Germanium drift transistor

diode S6 78A

Abstract: transistor 6bw Type Max . Ratings Yds Vgs V V I d mA gm CFY30 5 - 4 . + 0.5 80 30
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OCR Scan
diode S6 78A transistor 6bw TRANSISTOR PNP BA RT SOT 89 32N45 mmic CEA SOT363 up 6103 s8 25-RF-BIPOLAR-T BCX13

MMBD2104

Abstract: Transistor NEC 05F 0.50 0.50 - S em iconductor Group 277 SIEM ENS CFY30 C o m m on S o u rce S P a ra m
SMD Code Book
Original
MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d MMBD2103 BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

MMBD2103

Abstract: ZENER DIODE t2d SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fw, = 1.4 dB @ 4 G H z ) * High gain , 1542 01.96 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA D , ] Semiconductor Group 1543 01.96 SIEMENS GaAs FET CFY30 Output characteristics l0 = f (VD S , SIEMENS GaAs FET CFY30 Typical Common Source S-Parameters ID = 15 mA f GHz 0.1 0.4 0.8 1.2 1.6 , Group 1545 01.96 SIEMENS GaAs FET CFY30 Typical Common Source S-Parameters lD = 30
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Original
MMBD2101 MMBD2102 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 ZENER DIODE t2d 93 BAT15-115S BAV105 LL4148 LL4448 BB241 BB249 LL914

SMD Codes

Abstract: TRANSISTOR SMD T1P BSE D GaAs FET fl2 3 b3 2ü SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS T " '3 1 CFY30 · , 924 Siemens 32E D Ö23b320 0G17350 Q « S I P CFY30 SIEMENS/ SPCL-. SEMICONDS T , +]50 -J50 Siemens 925 32E D Ô23b320 0017351 2 H S I P CFY30 T- 31- 25 , ÜQ173S2 4 H S I P CFY30 SIEMENS/ SPCL-. SEMICONDS -Common Source S , 85 928 Siemens 32E D Ô23b320 0017354 a « S I P CFY30 SIEMENS/ SPCLi SEMICONDS T
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Original
TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor Transistor SMD a7s LL4150 BB219 LL300 BA682 BA683 BA423L

smd code book

Abstract: transistor SMD P1f 2 2 BF544 BF987 GaAsFETs Type M axim um Ratings Characteristics (T.=25°C) Case V CFY30
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Original
smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 DIODE SMD L4W 2SC3603 PDTA143ET SSTPAD10 SO2369R BST82 MRF5711L

transistor SMD s72

Abstract: nec mys 501 t »c h n o !o g i ss Infineon GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type BGV 503 BGV 903 CF 739 CF 750 CFH 120-08 CFH 120-10 CFH 400 CFH 400T CFH 800 CFH 800T CFY30 CFY 35-20 CFY 35-23 CGB 91 CGB 191 CGB 240 CGM 20G CGM 800C CGM 1900C CGY 50 CGY 59W CGY 60 CGY 62 CGY 63 CGY 96 CGY 98 CGY 99 CGY 121 A CGY 121 B Data Book Marking BGV 503 BGV 903 MSs MX H3s H4s N4s N4s N8s N8s A2 NA NB CGB 91 CGB 191 CGB 240 on request CGM 800C
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Original
transistor SMD s72 nec mys 501 MYS 99 st MYS 99 102 transistor 8BB smd kvp 81A BC818W MUN5131T1 SMBT3904 MVN5131T1 DO215