NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: J U N Z L - 1/3 HOME COMPANY THEORY PRODUCT MESSAGE ORDER CONTACT Aluminum Electrolytic Capacitor CD11M MA5mmL standardCD11M CD11M MA 5mmLstandardCD11M ML 5mmLlow leakageCD11L Be 5mm in height and mini-size. Suitable for camera,car audio,mini-audio sets,etc. MP 5mmLno polarityCD11P MT 5mmLbig range temperature CD11T CD11T SM 7mmLstandardCD11C SX 7mmLstandardCD11X SP 7mmLno polarityCD11N ST 7mmLbig range temperature CD21C CD21C SS high CV ... | Original |
3 pages, |
CD288 CD11X CD11T CD11N CD11L CD11H CD11 CD11M datasheet abstract |
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| Abstract: MA 5mmL CD11M Be 5mm in height and mini-size. Suitable for camera, car radio , mini-audio sets, etc. Specification Item Characteristics D 3 4 5 6.3 8 F�5 1.0 1.5 2.0 2.5 3.5 d�1 0.4 0.45 0.5 Size and its 0.3 0.5 8 with safety vent PVC sleeve tolerance Operating temperature range -40 +85 Rated voltage range 4V 50V DC Nominal capacitance range 0.1ç¤" 470ç¤" Capacitance tolerance �%(100Hz . 20 ... | Original |
2 pages, |
CD11M CD11M abstract |
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| Abstract: GB-distribution boxes and enclosures, polyester, to European Standards (ATEX) GB-distribution box and enclosures Description The GB-terminal box, both distribution box and empty enclosure, is manufactured of high impact resistance, glass-fibre reinforced polyester SMC & DMC providing extraordinary stability and corrosion resistance. The standard enclosure consists of black, antistatic material. Other colours without antistatic characteristics are also available. All listed GB distributi ... | Original |
10 pages, |
3089U WDU 2,5 gb400 BAS98ATEX3089U GB-5195- GB-220 atex smc Weidmuller SAK 2.5 3090X BAS 98 ATEX 3090x BAS 98 ATEX BAS98ATEX3090X datasheet abstract |
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| Abstract: MOTOROLA SC (XSTRS/R F) b6E T> â- b3b7254 â-¡O'iflbMT ÛDb «MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds - Switching Times Specified at 100°C • Designer's Data - IdSS- ^DS(on)' VGS(th) anc' Specified ... | OCR Scan |
6 pages, |
RL 1962 MTP3N50 AN569 314B03 221D 221A-06 314B-03 bsc 68e datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| SDATA dummy | G9 SEN dummy G10 SDOUT cmos_obuf_data G11 AB12P AB12P AB12P AB12P dataoutput G12 AB12M AB12M AB12M AB12M dataoutput H1 CD11M www.datasheetarchive.com/download/17440302-915954ZC/sbam164.zip (ads58h40.ibs) |
Texas Instruments | 28/08/2012 | 36.95 Kb | ZIP | sbam164.zip |