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C30872 RCA Solid State Photodiode
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4 pages,
167.37 Kb

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Abstract: C30872 DATA SHEET Large Area Silicon Avalanche Photodiode for General-Purpose Applications I High , C30872 is a silicon avalanche photodiode made using a double-diffused "reach through" structure. This , all wavelengths. Because the fall time characteristic has no "tail", the responsivity of the C30872 is independent of modulation frequency up to about 200 MHz. The C30872 is hermetically-sealed behind a flat , «CANA - C30872 V/-5/ « » » tu c Ul 1 1 10-7 h- 2 e OC S « o K X < 4 a _J 4 U £ > 2 10-« AMBI EN T ... OCR Scan
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4 pages,
167.37 Kb

u 5601 S546 ir photodiode 0351 c30872 application notes RCA H 410 RCA 410 C30872 3G30L1G OGDD11S 3G30L1G abstract
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Abstract: versions of the RCA types C30817 C30817, C30916E C30916E, and C30872; they are hermetically sealed behind a flat glass ... OCR Scan
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6 pages,
275.85 Kb

C30916E tic 1060 C30956E C30872 C30817 C30955E s915 C30954E C30954E abstract
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Abstract: performance versions of the RCA types C30817 C30817, C30916E C30916E, and C30872; they are hermetically sealed behind a flat ... OCR Scan
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6 pages,
1349.36 Kb

c30955e avalanche photodiodes ISO-9001-87 C30956E c30954 C30916E C30872 C30817 C30954E C30955E ISO-9001-87 abstract
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Abstract: 425 C30916E C30916E B 1.5 70 100 0.5 3 2 8 275 - 425 C30872E C3 3 45 ... Original
datasheet

35 pages,
4333.51 Kb

InGaas PIN photodiode, 1550 NEP APD InGaAs array Laser Diode 850nm 14 pin DIL C30817 C30724 C30954 C30659-1060-3A FFD-100 C30845E C30927E-01 InGaAs APD quadrant PGEW2S09 C30659-1550-R2A datasheet abstract
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Abstract: xq1560 A906013 A906012 lhi878 LHI968 /Hz VOP Range V C30817E C30817E TO-5 0.8 75 50 0.5 2 2 7 275-425 C30872E ... Original
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50 pages,
423.33 Kb

TPS534 PGEW3S09 A106013 C1983 C1952 C30927E-01 C1973 transistor c1383 pin configuration of C1383 transistor Light-Dependent Resistor specification c1983 transistor C1383 NPN transistor C1383 transistor NPN transistor c1383 datasheet abstract
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C30872 N/A Avalanche-Type Photodiode

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