NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| 0603HC-22NXGBW | Coilcraft Inc | General Fixed Inductor, 1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP | 
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| 0603HC-22NXGBU | Coilcraft Inc | General Fixed Inductor, 1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP |
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| 0603HC-22NXJLW | Coilcraft Inc | General Fixed Inductor, 1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP, 0603, ROHS COMPLIANT |
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| 0603HC-22NXJBW | Coilcraft Inc | General Fixed Inductor, 1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP |
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| 0603HC-22NXJBU | Coilcraft Inc | General Fixed Inductor, 1 ELEMENT, 0.022 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD, CHIP |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: C11P C11N C12P Power Generator Power Generator Controller C12N C21P C21N C22P C22N , Memory Writer C21P C21N C22P C22N MFDI VOUT1 MFDO VEPD OS VPP MON_YR MON_TM1 ... | Original |
4 pages, |
EPD controller c12p S1D14F57 S1C17F epd driver ic Epson EPD controller C22N S1D14F51 S1D14F00 S1C17F00 S1D14F00 abstract |
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| Abstract: C11P_1 2 1 C12P_1 C10 1uF_X5_10V C22N_1 C12 + 1 2 2 1 2 + + TP1 , C12P C12N C11P C11N C21N C21P HVO C22P C22N LVO VGH VGL ARREF 1 ARREF 1uF_X5_10V , VCI VCI VSSA VSSA DDVDH PVSS C12P C12N C11P C11N C21N C21P HVO C22P C22N LVO VGH VGL ... | Original |
17 pages, |
C22N amoled Parallel RGB C12P S160 schottkey DIODE c19 SPI timing diagram SML13RGB2KT-TR HSYNC, VSYNC, DE, input, output C12N amoled driver amoled display Pixel Circuit for AMOLED Displays vgh vgl P0340WQL P0430WQL P0340WQL abstract |
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| Abstract: C22P C22N 4 C11P C11N C12P C12N 4 VGH VGL HVO LVO 2 AR_REF VGAMA1OUT , C21N 7 C22P 8 C22N 9 VGH Positive output voltage of the booster2 10 HVO ... | Original |
27 pages, |
vgh vgl C12N C12P Himax C22N C22P 03L20 PPT9999-A003-07-Q HIMA DIGITAL IC TESTER report for project HX8351 datasheet abstract |
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| Abstract: Circuit 4 C21P C21N C22P C22N 4 C11P C11N C12P C12N 4 VGH VGL HVO LVO , X- NC 4 Y+ NC 5 C21P 6 C21N 7 C22P 8 C22N 9 VGH Positive ... | Original |
27 pages, |
vgh vgl RH240320L-283NN-O PPT9999-A003-07-Q Himax and TOUCH and SCREEN C22P C22N HX8351 RH128128T-1X5WN-B RH128128T-1X5WN-B abstract |
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| Abstract: DUMMY C21N C21N C21N C21N C21P C21P C21P C21P C22N C22N C22N C22N C22N C22N C22N 190 , 3780 -304 214 C22N 6580 -304 175 C11N 3850 -304 215 C22N 6650 -304 176 C11N 3920 -304 216 C22N 6720 -304 177 C11N 3990 -304 217 C22N 6790 -304 178 C11N 4060 -304 218 C22N 6860 -304 179 C11N 4130 -304 219 C22N 6930 -304 180 C11P 4200 -304 220 C22N ... | Original |
88 pages, |
S594 s695 S622 S447 G82 770 A2 1010 817 g40 G86 770 A2 S328 ic ta 7699 s534 diode 5110 Dram S114 4511 TESTO 901 G86 703 A2 HEF 4543 IC ST7781 ST7781 ST7781 abstract |
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| Abstract: SPFD5408B SPFD5408B 720-channel 6-bit Source Driver with System-on-chip for Color Amorphous TFT-LCDs Preliminary DEC. 24, 2007 Version 0.4 ORISE Technology reserves the right to change this documentation without prior notice. Information provided by ORISE Technology is believed to be accurate and reliable. However, ORISE Technology makes no warranty for any errors which may appear in this document. Contact ORISE Technology to obtain the latest version of device specifications before plac ... | Original |
84 pages, |
ORISE Technology driver 20.000 s606 s314 AN 17820 IC ORISE Technology Ph 4847 EQUIVALENT s635 internal structure of 7490 IC G296 internal diagram of 7490 IC s551 BIT 3195 G g228 50v SPFD5408B SPFD5408B abstract |
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| Abstract: is not used. 15 C22N 16 C22P 17 HVO 18 C21P 19 C21N 20 C11N 21 C11P 22 C12N 23 C12P 24 ... | Original |
18 pages, |
Serial RGB 8bit CCIR601 24bit rgb input to ccir656 oled P0430WQL P0430WQLB S107 S160 C22P C22N cmel format OLED driver IC CHI MEI OLED waveforms P0430WQLB-T P0430WQLB-T P0430WQLB-T abstract |
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| Abstract: is not used. 15 C22N 16 C22P 17 HVO 18 C21P 19 C21N 20 C11N 21 C11P 22 C12N 23 C12P 24 ... | Original |
18 pages, |
S160 S107 C22N C22P CHI MEI OLED driver IC cmel 4.3 Serial RGB 8bit CCIR601 24bit parallel RGB to 8bit cmel format rgb to hsync vsync cmel oled P0430WQLC-T 24bit rgb input to 8bit rgb output P0430WQLC-T abstract |
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| Abstract: internal step-up circuit is not used. 15 C22N 16 C22P 17 HVO 18 C21P 19 C21N 20 C11N 21 C11P 22 ... | Original |
20 pages, |
Serial RGB 8bit CCIR601 C22N C22P cmel format cmel oled 24bit parallel RGB to 8bit P0340 Parallel RGB S107 s160 cmel 4.3 P0340WQL P0340WQLC-T cmel P0340WQLC-T abstract |
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| Abstract: internal step-up circuit is not used. 15 C22N 16 C22P 17 HVO 18 C21P 19 C21N 20 C11N 21 C11P 22 ... | Original |
20 pages, |
S160 24bit rgb input to ccir656 C22N C22P CHI MEI cmel oled 24bit parallel RGB to 8bit P0340 P0340WQL P0340WQLB-T S107 HX5116 P0340WQLB-T abstract |
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| Abstract: Standard Frequency: 100.0 MHz Features: Low phase noise High stability vs. temperature - up to 1x10-9 Ideal for VSAT, Frequency synthesizers Full PLL inside MV137 MV137 B 3 F 1 100.0 MHz Phase noise dBc/Hz 1x10-9 2x10-9 Availability of certain stability vs. operating temperature range 3x10-9 ORDERING GUIDE: 5x10-9 13a, KIMa Ave., St.Petersburg,199155, RUSSIA. Tel:+7-812-350-9243; 350-4461. Fax:+7-812-350-7290. http://www.morion.com.ru E-mail: sale@morion.com.ru ... | Original |
1 pages, |
MV137 MV137 abstract |
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| Abstract: MAAVCC0002 MAAVCC0002 Voltage Variable Absorptive Attenuator 1700 - 2200 MHz CSP-8, 28 Lead, 6mm Features n n n n n n n n n n V 2.00 Input IP3: +31 dBm Min (Full Attenuation Range) Input IP3 is 15 -20 dB Better than GaAs Linear Operation: +20 dBm Min. Plastic, 28 Lead, 6 mm CSP, SMT Package 35 dB Dynamic Range (With 30 mA Bias Current) Single Control Voltage 50 ohm Impedance Linear Driver, DR65-0002 DR65-0002, Available Test Boards are Available Tape and Reel Packaging Available D ... | Original |
3 pages, |
MAAVCC0002TR MAAVCC0002-TB MAAVCC0002 DR65-0002 MAAVCC0002 abstract |
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| Abstract: MAAVCC0001 MAAVCC0001 Voltage Variable Absorptive Attenuator 800 - 1000 MHz Features n n n n n n n n n n V 2.00 CSP-8, 28 Lead, 6mm Input IP3: +31 dBm Min. (Full Attenuation Range) Input IP3 is 15 -20 dB Better Than GaAs Linear Operation: +20 dBm Min. Plastic, 28 Lead, 6 mm CSP, SMT Package 38 dB Dynamic Range (With 30 mA Bias Current) Single Control Voltage 50 ohm Impedance Linear Driver, DR65-0002 DR65-0002, Available Test Boards are Available Tape and Reel Packaging Available D ... | Original |
3 pages, |
MAAVCC0001TR MAAVCC0001-TB MAAVCC0001 DR65-0002 MAAVCC0001 abstract |
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| Abstract: VRRM = 400 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71X0400 71X0400 Doc. No. 5SYA1158-01 5SYA1158-01 July 06 · Optimized for high current rectifiers · Very low on-state voltage · Very low thermal resistance Blocking VRRM Repetitive peak reverse voltage 400 V Half sine wave, tP = 10 ms, f = 50 Hz VRSM Maximum peak reverse voltage 450 V Half sine wave, tP = 10 ms IRRM Rep ... | Original |
4 pages, |
71X0400 datasheet abstract |
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| Abstract: VRRM = 200 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71X0200 71X0200 Doc. No. 5SYA1156-01 5SYA1156-01 July 06 · Optimized for high current rectifiers · Very low on-state voltage · Very low thermal resistance Blocking VRRM Repetitive peak reverse voltage 200 V Half sine wave, tP = 10 ms, f = 50 Hz VRSM Maximum peak reverse voltage 300 V Half sine wave, tP = 10 ms IRRM Rep ... | Original |
4 pages, |
datasheet abstract |
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| Abstract: VRRM = 200 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71B0200 71B0200 Doc. No. 5SYA1132-02 5SYA1132-02 July 06 · Optimized for high current rectifiers · Very low on-state voltage · Very low thermal resistance Blocking VRRM Repetitive peak reverse voltage 200 V Half sine wave, tP = 10 ms, f = 50 Hz VRSM Maximum peak reverse voltage 300 V Half sine wave, tP = 10 ms IRRM Rep ... | Original |
4 pages, |
71B0200 datasheet abstract |
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| Abstract: VRRM = 200 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71B0200 71B0200 Doc. No. 5SYA1132-02 5SYA1132-02 Oct.00 · Optimized for high current rectifiers · Very low on-state voltage · Very low thermal resistance Blocking VRRM Repetitive peak reverse voltage 200 V Half sine wave, tP = 10 ms, f = 50 Hz VRSM Maximum peak reverse voltage 300 V Half sine wave, tP = 10 ms IRRM Re ... | Original |
4 pages, |
71B0200 datasheet abstract |
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| Abstract: VRRM = 200 V IFAVM = 7110 A IFRMS = 11200 A IFSM = 55000 A VF0 = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71X0200 71X0200 Doc. No. 5SYA1156-01 5SYA1156-01 Oct.00 · Optimized for high current rectifiers · Very low on-state voltage · Very low thermal resistance Blocking VRRM Repetitive peak reverse voltage 200 V Half sine wave, tP = 10 ms, f = 50 Hz VRSM Maximum peak reverse voltage 300 V Half sine wave, tP = 10 ms IRRM Re ... | Original |
4 pages, |
datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| V BO Breakover voltage * C = 22nF * MIN. 30 V TYP. 32 MAX. 34 I V BO1 - V BO2 I Breakover voltage symmetry C = 22nF * MAX. + 2 V D V Dynamic breakover voltage * V BO and V Breakover current * C = 22nF * MAX. 15 m A tr Rise time * see diagram 3 MAX. 2 m s I R Leakage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3199-v3.htm |
STMicroelectronics | 10/01/2001 | 6.13 Kb | HTM | 3199-v3.htm |
| * C = 22nF * see diagram 1 MIN 28 30 V TYP 32 32 MAX 36 34 [I+V BO I-I-V BO I] Breakover voltage symmetry C = 22nF * see diagram 1 MAX + 3 + 2 V I D V + I Dynamic breakover MIN 5 V I BO Breakover current * C = 22nF * MAX 100 15 m A tr Rise time * see diagram 3 TYP www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3199.htm |
STMicroelectronics | 20/10/2000 | 6.63 Kb | HTM | 3199.htm |
| RESISTANCES 1/4 Symbol Parameter Test Conditions Value Unit DB3 DC34 DB4 V BO Breakover voltage * C = 22n C = 22nF * see diagram 1 MAX + 3 V I D V + I Dynamic breakover voltage * D I = [I BO to I F =10mA] see diagram 1 MIN 5 V V O Output voltage * see diagram 2 MIN 5 V I BO Breakover current * C = 22n www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2977.htm |
STMicroelectronics | 02/04/1999 | 4.9 Kb | HTM | 2977.htm |
| RESISTANCES 1/4 Symbol Parameter Test Conditions Value Unit TMMDB3 TMMDB3TG V BO Breakover voltage * C = 22nF * see diagram 1 MIN 28 30 V TYP 32 32 MAX 36 34 [I+V BO I-I-V BO I] Breakover voltage symmetry C = 22n diagram 1 MIN 5 V V O Output voltage * see diagram 2 MIN 5 V I BO Breakover current * C = 22nF * MAX 100 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3199-v2.htm |
STMicroelectronics | 14/06/1999 | 4.51 Kb | HTM | 3199-v2.htm |
| * C = 22nF * MIN. 30 V TYP. 32 MAX. 34 I V BO1 - V BO2 I Breakover voltage symmetry C = 22nF * MAX. + 2 V D V Dynamic breakover voltage * V BO and V F at 10mA MIN. 9 V V O Output voltage * see diagram 2 (R=20 W ) MIN. 5 V I BO Breakover current * C = 22nF * MAX. 15 m A tr Rise time * see diagram 3 MAX. 2 m s I R Leakage current * V R = 0 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7508.htm |
STMicroelectronics | 10/01/2001 | 5.99 Kb | HTM | 7508.htm |
| Parameter Test Conditions Value Unit DB3 DC34 DB4 V BO Breakover voltage * C = 22nF * see diagram 1 MIN 28 30 35 V TYP 32 34 40 MAX 36 38 45 [I+V BO I-I-V BO I] Breakover voltage symmetry C = 22nF * see diagram 1 MAX + 3 V I D V + I Dynamic breakover voltage * D I = [I BO to I current * C = 22nF * MAX 100 50 100 m A tr Rise time * see diagram 3 TYP 1.5 m s I B Leakage www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2977-v1.htm |
STMicroelectronics | 20/10/2000 | 6.97 Kb | HTM | 2977-v1.htm |
| RESISTANCES 1/4 Symbol Parameter Test Conditions Value Unit DB3 DC34 DB4 V BO Breakover voltage * C = 22n C = 22nF * see diagram 1 MAX + 3 V I D V + I Dynamic breakover voltage * D I = [I BO to I F =10mA] see diagram 1 MIN 5 V V O Output voltage * see diagram 2 MIN 5 V I BO Breakover current * C = 22n www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2977-v2.htm |
STMicroelectronics | 14/06/1999 | 4.87 Kb | HTM | 2977-v2.htm |
| RESISTANCES 1/4 Symbol Parameter Test Conditions Value Unit TMMDB3 TMMDB3TG V BO Breakover voltage * C = 22nF * see diagram 1 MIN 28 30 V TYP 32 32 MAX 36 34 [I+V BO I-I-V BO I] Breakover voltage symmetry C = 22n diagram 1 MIN 5 V V O Output voltage * see diagram 2 MIN 5 V I BO Breakover current * C = 22nF * MAX 100 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3199-v1.htm |
STMicroelectronics | 02/04/1999 | 4.55 Kb | HTM | 3199-v1.htm |
| Conditions SMDB3 DB3 DB4 Unit V BO Breakover voltage * C = 22nF * MIN. 28 28 35 V TYP. 32 32 40 MAX. 36 36 45 I V BO1 - V BO2 I Breakover voltage symmetry C = 22nF * MAX. 3 V D V diagram 2 (R=20 W ) MIN. 10 5 V I BO Breakover current * C = 22nF * MAX. 10 50 m A tr Rise www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7488.htm |
STMicroelectronics | 13/12/2000 | 7.13 Kb | HTM | 7488.htm |
| * source AVERAGE .SUBCKT SCHEMATIC1 R_Reff N14408 N14408 N14408 N14408 N45760 N45760 N45760 N45760 50m R_RC18 0 N477130 N477130 N477130 N477130 15m R_R11 N15208 N15208 N15208 N15208 N15214 N15214 N15214 N15214 1.3 L_L1 N14970 N14970 N14970 N14970 N15076 N15076 N15076 N15076 1.5u X_U4 N14446 N14446 N14446 N14446 N14470 N14470 N14470 N14470 UTD_TPS40190AVG TPS40190AVG TPS40190AVG TPS40190AVG PARAMS: K=1 TD=1u L_Lac N15076 N15076 N15076 N15076 N15214 N15214 N15214 N15214 1 C_C22 N14446 N14808 N14808 N14808 N14808 680p C_Cac N15214 N15214 N15214 N15214 N15294 N15294 N15294 N15294 1 C_C15 N473230 N473230 N473230 N473230 N15076 N15076 N15076 N15076 30u R_R9 N14808 N14808 N14808 N14808 N14814 N14814 N14814 N14814 49.9k V_V4 N15294 N15294 N15294 N15294 0 DC 0Vdc AC 1 R_RC15 0 N473230 N473230 N473230 N473230 15m C_C17 www.datasheetarchive.com/download/86554634-922801ZC/tps40195_pspice_average_and_transient_model-a.zip (SCHEMATIC1.LIB) |
Texas Instruments | 11/08/2011 | 443.69 Kb | ZIP | tps40195_pspice_average_and_transient_model-a.zip |