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CD4047BKMSR Intersil Corporation 4000/14000/40000 SERIES, MONOSTABLE MULTIVIBRATOR, CDFP14 visit Intersil
ID82C82 Intersil Corporation CMOS SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDIP20 visit Intersil
ACTS373KMSR-02 Intersil Corporation ACT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20 visit Intersil
ACTS373DMSR-02 Intersil Corporation ACT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDIP20 visit Intersil
CD4047BDMSR Intersil Corporation 4000/14000/40000 SERIES, MONOSTABLE MULTIVIBRATOR, CDIP14 visit Intersil
HCTS540DMSR Intersil Corporation HCT SERIES, 8-BIT DRIVER, INVERTED OUTPUT, CDIP20 visit Intersil

BYV27 Series Datasheet

Part Manufacturer Description PDF Type
BYV27 Series Philips Semiconductors Ultra fast low-loss controlled avalanche rectifiers Original

BYV27 Series

Catalog Datasheet MFG & Type PDF Document Tags

BYV27

Abstract: BYV27-50 DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV27 series Ultra fast , Ultra fast low-loss controlled avalanche rectifiers BYV27 series FEATURES DESCRIPTION · , SYMBOL IFRM BYV27 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX , -300 to 600 Cd BYV27 series diode capacitance BYV27-50 to 200 CONDITIONS when switched from , avalanche rectifiers BYV27 series GRAPHICAL DATA MGA849 2.0 I F(AV) I F(AV) (A) MLC293
Philips Semiconductors
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BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-300 BYV27-500 BYV27-400 MAM047
Abstract: rectifiers BYV27 series FEATURES DESCRIPTION â'¢ Glass passivated Rugged glass SOD57 package , BYV27 series controlled avalanche rectifiers SYMBOL PARAMETER MAX. - 14 A BYV27 , Semiconductors Ultra fast low-loss BYV27 series controlled avalanche rectifiers SYMBOL , specification Ultra fast low-loss controlled avalanche rectifiers 1996 Oct 02 BYV27 series 11 -139 Philips Semiconductors Product specification Ultra fast low-loss BYV27 series controlled -
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BYV27-600 MQA200

BYV27-50

Abstract: BYV27 Series DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV27 series Ultra fast , glass SOD57 package, using a high temperature alloyed construction. BYV27 series This package is , BYV27 series MIN. MAX. 20 16 14 13 11 50 40 20 +175 +175 A A A A A A A UNIT mJ °C °C , , 23 and 24 MIN. - - - - - - BYV27 series TYP. - - MAX. 25 50 UNIT ns ns 100 80 65 - , specification Ultra fast low-loss controlled avalanche rectifiers GRAPHICAL DATA MGA849 BYV27 series
Philips Semiconductors
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BYV27-200-TR PHILIPS BYV27 BYV27150 BYV27200 BYV27400 BYV27600

BYV27 Series

Abstract: BYV27 5bE D 711002b 0D4Dbb3 Uli «PHIN philips international SbE D BYV27 SERIES T-03- t£* EPITAXIAL , XPert Version 1.2P This Material Copyrighted By Philips Semiconductors. BYV27 SERIES philips , diodes PHIN BYV27 SERIES IPS INTERNATIONAL SbE CHARACTERISTICS T- -03-15 Tj = 25 °C unless , . BYV27 SERIES philips international 5bE ]> 711002b OOMDbbb ÃTD HPHIN sbe d Reverse recovery when , - r- 100 Ttp (°C) 200 BYV27 SERIES SbE ]> Tâ'"03â'"15 Fig. 8 Maximum average fohward current. The
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ScansUX64 T03-15 T-03-15 T-03-I5

1BYV27

Abstract: 73d diode Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BYV27 SERIES b-ìE D JL bbsa'm ci , avalanche diodes b=5E D â  bbSBTBl 002bb53 0^5 HAPX BYV27 SERIES A CHARACTERISTICS Tj = 25 °C unless , b'iE I> â  1^53131 0D2bbS5 Tbfl â  APX BYV27 SERIES Jl 7Z88040 200 Fig. 8 Maximum average , N AUER PHILIPS/DISCRETE BYV27 SERIES fc.'ìE T> m t.bSa'ìBl ODSbtiSti ÃT4 â  APX 10' Qs (nC , LTE D Epitaxial avalanche diodes ^53131 0G2bbS7 73D â  APX BYV27 SERIES X inA) 7Z88043 Fig. 12
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1BYV27 73d diode 7Z88041 7Z8803B

BYV27

Abstract: BYV27-50 DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV27 series Ultra fast , avalanche rectifiers BYV27 series FEATURES DESCRIPTION · Glass passivated Rugged glass SOD57 , specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM BYV27 series PARAMETER , PARAMETER reverse recovery time BYV27-50 to 200 BYV27-300 to 600 Cd BYV27 series diode , Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series GRAPHICAL
Philips Semiconductors
Original
SCA56
Abstract: SERIES CHARACTERISTICS Tj = 25 °C unless otherwise specified BYV27-50 150 200 > 110 , DDEbbS5 ' b i H A P X If BYV27 SERIES Epitaxial avalanche diodes Fig. 8 Maximum average forward , tbS3S3i ooBbbSL. a m â  APX BYV27 SERIES J V 10 â'" dlp/dt (A/ps) 10 2 Fig. 10 , N AUER PHILIPS/DISCRETE b^E 1 â  > bbSB'iai 002bbSl 212 B A P X _ J ^ BYV27 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically -
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53T31

Ultra Fast Avalanche Sinterglass Diode

Abstract: BYV27 diode BYV27 Series Ultra Fast Avalanche Sinterglass Diode Features Controlled avalanche , V V V V V V A A BYV27 Series Ultra Fast Avalanche Sinterglass Diode Parameter Average forward , Figure 2. Forward Current vs. Forward Voltage BYV27 Series Ultra Fast Avalanche Sinterglass Diode P , band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part BYV27-50 BYV27-100 BYV27-150 BYV27-200 Type differentiation VR = 50 V; IFAV = 2 A VR = 100 V; IFAV = 2 A VR = 150
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Ultra Fast Avalanche Sinterglass Diode BYV27 diode 2002/95/EC 2002/96/EC MILSTD-750
Abstract: www.eicsemi.com BYV27 SERIES EPITAXIAL AVALANCHE DIODES DO - 41 PRV : 50 - 200 Volts Io : 2.0 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Very fast recovery Pb / RoHS Free , : July 8, 2005 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( BYV27 SERIES ) FIG.1 - REVERSE , (Note 1) BYV27-50 BYV27-100 BYV27-150 BYV27-200 UNIT VRRM 50 100 150 200 V VR EIC Semiconductor
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DO-41 UL94V-O MIL-STD-202
Abstract: BYV27 SERIES EPITAXIAL AVALANCHE DIODES D2 PRV : 50 - 200 Volts Io : 2.0 Amperes * * * * * * 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : High current capability High surge , Repetitive Peak Reverse Voltage BYV27-50 BYV27-100 BYV27-150 BYV27-200 UNIT Min. Reverse Avalanche , to IR = 1A. Page 1 of 2 Rev. 01 : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( BYV27 SERIES ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC IF dIF/dt Trr t 10 % IR dIR/dt EIC Semiconductor
Original

BYV27 Series

Abstract: BYV27-200 DO-41 BYV27 SERIES EPITAXIAL AVALANCHE DIODES DO - 41 PRV : 50 - 200 Volts Io : 2.0 Amperes FEATURES : * * * * * * * High current capability High surge current capability High reliability , , 2005 RATING AND CHARACTERISTIC CURVES ( BYV27 SERIES ) FIG.1 - REVERSE RECOVERY TIME , Voltage Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA Ttp = 85 °C (Note 1) BYV27-50 BYV27-100 BYV27-150 BYV27-200 UNIT VRRM 50 100 150 200 V VR 50 100 150 200
EIC Semiconductor
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BYV27-200 DO-41

BYV27-100

Abstract: BYV27-150 lâ'ž' 1.0A, lnK = 'AA MECHANICAL SPECIFICATIONS BYV27 SERIES UES1100 SERIES BODY A 1. Band , RECTIFIERS High Efficiency, 2.5A BYV27-50 U ESI 101 BYV27-100 U ESI 102 BYV27-150 UES1103 , '¢ Convenient Package recovery and low forward voltage are required. ABSOLUTE MAXIMUM RATINGS BYV27-50 BYV27-100 BYV27-150 UES1101 UESI 102 UES1103 Peak Inverse Voltage, Vâ , °C Tj = 165°C Tj = 165°C Tj = 165°C Time* BYV27-50 50V 1.25V 85V BYV27-100 100V @ @ 150/uA 150
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UES1102 150//A

BYV27-50

Abstract: BYV27-100 u it I f = `7 A MECHANICAL SPECIFICATIONS UES 1100 SERIES BYV27 SERIES I 1 055 T V P I 4 mm , Small Size · Convenient Package UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27 , UES1103 BYV27-50 BYV27-100 BYV27-150 100V . 150V. . . . Peak Inverse Voltage, V , 100V 150V ln' 1.0 A , Intc = V dA Type UES1101 UES1102 UES1103 BYV27-50 BYV27-100 BYV27 , AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11. 4/82 4 94 _ y UNITRODE U E S llO l BYV27
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UES1X02
Abstract: INDICATES UES1100 SERIES BYV27 SERIES BODY A 0 THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT , UESI101 UES1102 UES1103 RECTIFIERS High Efficiency, 2.5A BYV27-50 BYV27-100 BYV27 , .-55°C to +175°C . BYV27-50 BYV27-100 BYV27 , Maximum Reverse Current @ Rated VR 50V 100V 150V BYV27-50 BYV27-100 BYV27-150 50V 100V , UES1101 BYV27-50 UES1102 BYV27-100 UES1103 BYV27-150 25 50 75 100 125 Typical Reverse -
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UESI102

BYV27

Abstract: BYV27-100 SERIES BYV27 SERIES BODY A _ .155 TYR 3.9mm IT .085 MAX. 2.16mm i t ^250 MA)0 6.35mm 1.625 MIN , RECTIFIERS High Efficiency, 2.5A UES1101 BYV27-50 üES1102 BYV27-100 UES1103 BYV27 , UESI 102 UESU03 BYV27-50 BYV27-100 BYV27-150 Peak Inverse Voltage, Vâ , 25nS UES1103 150V 2A 2A Tj = 25°C Tj = 165°C Tj = 25°C Tj = 165°C BYV27-50 50V 1.25 V ,85V BYV27-100 100V @ @ UiA 150//A 25 nS BYV27-150 150 V 5A 2.5A â'¢Measured in circuit lF = V2A, lâ
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BYV-27-100 BYV27-

UES1102

Abstract: BYV27-100 lâ'ž' 1.0A, lnK = 'AA MECHANICAL SPECIFICATIONS BYV27 SERIES UES1100 SERIES BODY A 1. Band , RECTIFIERS High Efficiency, 2.5A BYV27-50 U ESI 101 BYV27-100 U ESI 102 BYV27-150 UES1103 , '¢ Convenient Package recovery and low forward voltage are required. ABSOLUTE MAXIMUM RATINGS BYV27-50 BYV27-100 BYV27-150 UES1101 UESI 102 UES1103 Peak Inverse Voltage, Vâ , °C Tj = 165°C Tj = 165°C Tj = 165°C Time* BYV27-50 50V 1.25V 85V BYV27-100 100V @ @ 150/uA 150
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UES1101-UES1103 unitrode

BYC05B-600

Abstract: PHB23NQ10T BYV26, BYV27 series diodes 10-20 A rectifiers 100-200 V MOSFET 3.3 / 5 / 12 V DC Telecomms Power , DC 100-200 V MOSFETs BYV26, BYV27 series diodes PHX7N60E PHX6N60E PHX4N60E PHX3N60E PHX2N60E , D -PAK (SOT 404) 2 SOD 57 BYV26B BYV26C BYV26D BYV26E BYV27-050 BYV27-100 BYV27-150 BYV27-200 BYV27-400 BYV27-600 SOD 113 (2-PIN SOT 186A) TO220AC (SOD 59) SOT 186A (ISOLATED TO220AB
Philips Semiconductors
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BYC08-600 BYC05B-600 BYC08B-600 PHB23NQ10T PHB27NQ10T PHP18NQ10T MSD120 bridge rectifier 8341 M3D306 BYW29ED-150 BYW29ED-200 BYW29EB-150 BYW29EB-200 BYW29EX-150

lg philips crt monitor circuit diagram

Abstract: tda4863aj vertical IC (AV) max (V) max (A) Fast soft-recovery controlled avalanche rectifiers BYD33 series 200-1400 1.3 BYV95 series 200-600 1.5 BYV96E 1000 1.5 BYW95 series 200-600 3 BYW96 series 800-1000 3 Ultra fast low-loss controlled avalanche rectifiers BYD73 series 50-400 1.7 BYV27 series 50-600 2.0 BYV28 series 50-600 3.5 High-voltage soft-recovery rectifiers BY8000 series 5-19 kV 20-3 mA BY8100 series 5-19 kV 20-3 mA BY8200 series 6-12 kV 10-5 mA BY8400 series 5-30 kV 20-3
Philips Semiconductors
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lg philips crt monitor circuit diagram tda4863aj vertical IC tda4886 LG crt monitor 15 inch circuit diagram diagram LG LCD TV circuits TV horizontal Deflection Systems LG 611672/20K/FP/2

AT2097

Abstract: lg philips crt monitor circuit diagram ) max (V) max (A) Fast soft-recovery controlled avalanche rectifiers BYD33 series 200-1400 1.3 BYV95 series 200-600 1.5 BYV96E 1000 1.5 BYW95 series 200-600 3 BYW96 series 800-1000 3 Ultra fast low-loss controlled avalanche rectifiers BYD73 series 50-400 1.7 BYV27 series 50-600 2.0 BYV28 series 50-600 3.5 High-voltage soft-recovery rectifiers BY8000 series 5-19 kV 20-3 mA BY8100 series 5-19 kV 20-3 mA BY8200 series 6-12 kV 10-5 mA BY8400 series 5-30 kV 20-3 mA BY8500
Philips Semiconductors
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AT2097 kmz51 lg crt monitor circuit diagram TDA4863aj lg lg 29" crt tv smps circuit diagram Flyback Transformers LG TV P-411 301676/FP/64

BU4508DX equivalent

Abstract: BUT11APX equivalent , BYV27 series diodes -VE 5-30 A rectifiers PowerMOS Battery Charger, Computer Power Supply , TO92 (SOT54) e.g. BUJ100 MSD497 Voltage Spec series VCES VCEO 400 1200 550 300 1000 500 200 , Semiconductors offers the SOD106 range (BYG series). These SOD106 rectifiers are the same size as the SMA , ) DUAL (2 x 15 A) SINGLE SINGLE SINGLE SINGLE BYG70G ES1A US1A BYD77A BYD73A BYV27-050 BYV28-050 ES1B US1B BYD77B BYD73B BYV27-100 BYV28-100 BYW29E-100 BYV32E-100 ES1C BYV40E
Philips Semiconductors
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BU4508DX equivalent BUT11APX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 2SD1878 data sheet FIN-02630 BP317 D-20097 H-1119 254-D BT148-600R
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