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Part : BYD57G Supplier : Philips Semiconductors Manufacturer : America II Electronics Stock : 7,370 Best Price : - Price Each : -
Part : BYD57J Supplier : Philips Semiconductors Manufacturer : America II Electronics Stock : 31,886 Best Price : - Price Each : -
Part : BYD57V Supplier : Philips Semiconductors Manufacturer : America II Electronics Stock : 4,495 Best Price : - Price Each : -
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BYD57 Datasheet

Part Manufacturer Description PDF Type
BYD57 Philips Semiconductors Ultra-fast soft-recovery controlled avalanche rectifiers Original
BYD57D Philips Semiconductors Ultra-fast soft-recovery controlled avalanche rectifiers Original
BYD57D Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Scan
BYD57DA EIC Semiconductor Avalanche Fast Recovery Rectifier Diodes Original
BYD57G Philips Semiconductors Ultra-Fast Soft-Recovery Controlled Avalanche Rectifier Original
BYD57G Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Scan
BYD57GA EIC Semiconductor Avalanche Fast Recovery Rectifier Diodes Original
BYD57J Philips Semiconductors Ultra-fast soft-recovery controlled avalanche rectifiers Original
BYD57J Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Scan
BYD57JA EIC Semiconductor Avalanche Fast Recovery Rectifier Diodes Original
BYD57JT/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BYD57K Philips Semiconductors Ultra-Fast Soft-Recovery Controlled Avalanche Rectifier Original
BYD57K Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Scan
BYD57KA EIC Semiconductor Avalanche Fast Recovery Rectifier Diodes Original
BYD57M Philips Semiconductors Ultra-Fast Soft-Recovery Controlled Avalanche Rectifier Original
BYD57M Philips Semiconductors Very Fast Soft Recovery Avalanche Rectifier Diodes Scan
BYD57MA EIC Semiconductor Avalanche Fast Recovery Rectifier Diodes Original
BYD57MT3 Philips Semiconductors Ultra-fast soft-recovery controlled avalanche rectifier Original
BYD57MT/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BYD57 Series Philips Semiconductors Ultra-fast soft-recovery controlled avalanche rectifiers Original
Showing first 20 results.

BYD57

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V VR continuous reverse voltage BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V IF(AV) average forward current BYD57D to M BYD57U and V IF(AV) average forward current BYD57D to M BYD57U and V , (BR)R reverse avalanche breakdown voltage BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V IR reverse , -dt PARAMETER maximum slope of reverse recovery current BYD57D to J BYD57K and M BYD57U and V THERMAL Philips Semiconductors
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100H03 M3D121 MAM061 SCA60
Abstract: accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V VR continuous reverse voltage BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V IF(AV , BYD57U and V V(BR)R reverse avalanche breakdown voltage BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V , BYD57J BYD57K BYD57M BYD57V marking/packing Standard Marking * Reel Pack, SMD, Large Standard Marking , recovery time BYD57D to J BYD57K and M BYD57U and V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.16 when Philips Semiconductors
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smd marking 242 sod87 package str 30135
Abstract: energy 10 mJ trr reverse recovery time BYD57D; BYD57G; BYD57J 30 ns BYD57K; BYD57M , BYD57D - 200 V BYD57G - 400 V BYD57J - 600 V BYD57K - 800 V BYD57M - 1000 V BYD57D - 200 V BYD57G - 400 V BYD57J - 600 V , V - 3.6 V BYD57D BYD57G 500 - V BYD57J 700 - V BYD57K 900 , ns reverse current reverse recovery time trr BYD57D; BYD57G; BYD57J =V RRMmax V R -
OCR Scan
53R31 QQ27QQ7 S3R31 0D2700
Abstract: repetitive peak reverse voltage BYD57D V 400 V - 600 V BYD57K - 800 V BYD57M - 1000 V BYD57D - 200 V BYD57G - 400 V BYD57J - 600 V BYD57K - 800 V BYD57M - 1000 V Ttp = 85 °C; see Fig.2; averaged over any 20 ms , UNIT Ir = 0.1 mA BYD57D 300 BYD57G 500 - - V BYD57J 700 - - V BYD57K 900 - - V BYD57M 1100 - - V Vr = VRRMmaxi see Fig.9 - - -
OCR Scan
MGC524
Abstract: repetitive peak reverse voltage BYD57D - 200 V BYD57G - 400 V BYD57J 600 V - 800 V BYD57M - 1000 V BYD57D - 200 V BYD57G VR - BYD57K - 400 V continuous reverse voltage BYD57J 600 V - 800 V BYD57M - , UNIT - - V IR = 0.1 mA BYD57D BYD57G 500 - - V BYD57J 700 - - , reverse current reverse recovery time BYD57D to J BYD57K and M Cd dI R -dt when -
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MSA965 PHILIPS BYD57 MBA505
Abstract: BYD57G 400 V BYD57J 600 V BYD57K 800 V BYD57M 1000 V Vr continuous reverse voltage BYD57D 200 V BYD57G 400 V BYD57J 600 V BYD57K 800 V BYD57M 1000 V 'F(AV) average forward current 1 A , reverse recovery time BYD57D; BYD57G; BYD57J 30 ns BYD57K; BYD57M; 75 ns October 1993 This , BYD57D - 200 V BYD57G - 400 V BYD57J - 600 V BYD57K - 800 V BYD57M - 1000 V 'f(AV) average , breakdown voltage lR = 0.1 mA BYD57D 300 - V BYD57G 500 - V BYD57J 700 - V BYD57K 900 - V -
OCR Scan
S3T31 GDS7Q07
Abstract: BYD57D - 200 V BYD57G - 400 V BYD57J - 600 V BYD57K - 800 V BYD57M 1000 V - 1200 V BYD57V - 1400 V BYD57D - 200 V BYD57G VR - BYD57U - 400 V continuous reverse voltage BYD57J - 600 V BYD57K , IR = 0.1 mA BYD57D BYD57G 500 - - V BYD57J 700 - - V BYD57K 900 , BYD57U and V IF(AV) - BYD57V - 11 A average forward current BYD57D to M BYD57U and Philips Semiconductors
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SOD87 marking
Abstract: 300 0.8 BYD57 Ultrafast 400 ­ 1400 30 ­ 150 1 BYD77 Low Loss Ultrafast 50 ­ Philips Semiconductors
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SOD87 Diode zener smd d8 SOD87 footprint Zener diode smd marking 18 diode snubber sod-87 MSD895 MSD894
Abstract: BYD47-20 Fast 2000 300 0.8 BYD57 Ultrafast 400 ­ 1400 30 ­ 150 1 BYD77 Philips Semiconductors
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zener diode voltage list List of Zener diode smd diode marking 77 smd glass diode philips zener diode flyback snubber
Abstract: OUT4 OUT3 OUT2 OUT1 1 JMP11 GND 47uF BYD57 C2 + C1 100nF GND Freescale Semiconductor
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xenon flash lamps PQFN-24 xenon-hid 12V DC XENON FLASHER C0805 100nf tp10 tp9 tp8 tp7 tp6 tp5 tp4 tp3 jp1
Abstract: BYD57 C2 + C1 100nF GND BANANA_RED CN2 VBAT D7 1 1 1 1 1 IN JMP2 Freescale Semiconductor
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Abstract: BYD37K SOD87 diode BYD33K 1647 BYD37M SOD87 diode BYD33M 1647 BYD57 -
OCR Scan
pm2222a BCB47B SOD80C PHILIPS 1N4148 SOD80C BC558B PHILIPS BCB47BW BA582 BA482 BA682 BA683 BA483 BAL74
Abstract: 1N5821ID BY724 BYD11 BYD13 BYD17 BYD31 BYD33 BYD37 BYD57 BYD43-20 BYD71 BYD73 BYD77 BYM26 BYM36 BYM56 BYQ28E -
OCR Scan
1N4148 PN5416 bf0262a BF0262 OM335 OM336 OM2061 1N4007ID, 163 1N821 1N821A 1N823 1N823A 1N825 1N825A
Abstract: C27PH C4V7PH c51ph C5V6PH C10PH C15PH c16ph C33PH c3v9ph c5v1ph BYG60G BYG60G PH BYD53V 53V PH SOD81 SOD106 (DO214AC) BYD57D 57D PH SOD87 BYG60J BYG60J PH SOD106 (DO214AC) BYD57G 57G PH SOD87 BYD57J 57J PH SOD87 BYG60K BYG60K PH SOD106 (DO214AC) BYD57K 57K PH SOD87 BYD57M 57M PH SOD87 Philips Semiconductors
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C5V6 ph C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH 1N4733A 1N4734A 1N4735A 1N4736A 1N4737A 1N4738A
Abstract: BYD57M Diodes General Purpose Fast Rectifier Military/High-RelN I(O) Max.(A) Output Current1.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time75n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition).25 V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)1.0 @V(RM) (V) (Test Condition)1.0k I(RM) Max.(A) Reverse Current5.0u @V(R) (V)(Test Condition)1.0k I(RM) Max.(A) Pk. Rev. Current100u @V(R) (V) (Test Condition) @Temp. (øC) (Test Condition)165Ãu Philips Semiconductors
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TEA1620 IRF540 n-channel MOSFET BATTERY CHARGER BUK2114 buk2914-50syts TEA1507 TEA1552 BTH151
Abstract: BYD31D BYD31G BYD31J BYD33D BYD33G BYD33J BYD33K BYD33M BYD57D BYD57G BYD57J BYD57K BYD57M American Microsemiconductor
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DO-213AA
Abstract: HA1105R TEA1511 MOC 7811 uaa1004 D1-D4 are: COSS < 20pF at VDS > 100V for SPP03N60C3. BYD57K by Philips (800V,1A, trr = 75ns) can be selected for D1. The BYD57K data by Philips shows Cj < 2pF at VR > 100V. By choosing Cd = 200pF and Rd = 2.7K, we can use a 400V rectifier for D4, for example, BYD57G (400V, 1A, trr = 30ns) by Philips Temic Semiconductors
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TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725
Abstract: (JEDEC Method) 25 20 BYD57ZD~BYD57ZJ 15 BYD57ZK & BYD57ZM 10 5 0 0 50 75 , ELECTRICAL CHARACTERISTICS o Ratings at 25 C ambient temperature SYMBOLS BYD57ZD BYD57ZG BYD57ZJ BYD57ZK BYD57ZM UNITS Maximum repetitive peak reverse voltage VRRM 200 400 , BYD57Z SERIES SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - , CHARACTERISTIC CURVES OF BYD57Z SERIES FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM Supertex
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AN-H52 hv9931 2.2 microfarad 400v ac capacitor thyristor CS1 dimmer chokes MMBT2222A led fixture HV9931
Abstract: 600V 1A SOD87 Philips BYD57J 1 D3 DIODE ULTRA FAST SW 200V 2A SOD87 Philips Zowie Technology
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MIL-STD-750
Showing first 20 results.