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Part Manufacturer Description Datasheet BUY
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments Buy
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85 visit Texas Instruments

BY255 equivalent

Catalog Datasheet MFG & Type PDF Document Tags

BY255 equivalent

Abstract: transistor equivalent irf740 BYT03-400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 , ) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap 1.9mm for , -600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V , THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of
STMicroelectronics
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L6560 L6560A L6560D L6560AD BY255 equivalent transistor equivalent irf740 core THOMSON-CSF B1ET2910A h bridge irf740 L6560/A

transistor equivalent irf740

Abstract: L6560D BYT03-400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 , ) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap 1.9mm for , -600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V , % D94IN049A TRANSFORMER T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of
STMicroelectronics
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ICS44 ST L6560A 12v 120w smps D94IN050B

ETD 41 035

Abstract: transistor equivalent irf740 BYT03-400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 , ) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap 1.9mm for , -600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V , THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of
STMicroelectronics
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ETD 41 035 THOMSON-CSFB1ET2910A THOMSON-CSF PRODUCTS

1n5399 equivalent

Abstract: 1N5408 equivalent different part numbers and/ or series in equivalent or as near as possible package case styles. Semikron , BY253 DO15 BY254 DO15 BY255 DO15 BY296 DO15 BY297 DO15 BY298 DO15 BY299 DO15 BY396 DO15 , of obsoleting many different part numbers and/ or series in equivalent or as near as possible , / or series in equivalent or as near as possible package case styles. Semikron PartNumbers , many different part numbers and/ or series in equivalent or as near as possible package case styles
Rectron Semiconductor
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KBPC2502FP 1n5399 equivalent 1N5408 equivalent 1N5401 equivalent 1N4004 or 1N5404 UF4007 equivalent 1n5402 equivalent 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006

BY255 equivalent

Abstract: IGBT IRF740 BYT03-400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 , ) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap 1.9mm for , -600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V , THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of
STMicroelectronics
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IGBT IRF740 Transformer ETD-29

BY255 equivalent

Abstract: RH3G -204AC BYM56E BYM56EP 1000 ERC/ERD07-13 BY255 1300 typ. 1500 7.5 CGP/DGP30, RH3F, RH3G , see http://www.diotec.com/ - ,Products" or contact Diotec Nearest Equivalent http://www.diotec.com
Diotec
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1N5062 RH3G BY228 equivalent 1n5062 equivalent BY255 SMD erb06-15 RH3F ERB06-13 1N4007-1300 BY133 CGP/DGP15 RH10F ERB06-15

irf740 pins connections

Abstract: L6560 BYT03-400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 , ) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap 1.9mm for , -600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V , % D94IN049A TRANSFORMER T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of
STMicroelectronics
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irf740 pins connections

ST L6560A

Abstract: BY255 BYT03-400 R3 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V R2 D3 1N4150 100 5% D2 1N5248B , 1% uc d TRANSFORMER T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT , o BRIDGE + 4 x BY255 FUSE 4A/250V bs O C1 1µF 400V R3 D3 1N4150 220K 5 , 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of #27 AWG (0.15mm
STMicroelectronics
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ETD 29 transformer

ETD 41 035

Abstract: transistor equivalent irf740 BYT03-400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 , ) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap 1.9mm for , -600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V , THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of
STMicroelectronics
Original

ETD 41 035

Abstract: L6560 BYT03-400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 , ) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap 1.9mm for , -600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V , THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of
STMicroelectronics
Original

BA159 equivalent

Abstract: B80C1500-1000 equivalent Diotec devices, case and electrical specifications almost identical R R R R 04.06.2002 , Z Z Z Z Z Z Z Z Z Z red types = original Diotec devices black types = equivalent Diotec , original Diotec devices black types = equivalent Diotec devices, case and electrical specifications almost , BY252 BY253 BY254 BY255 R R R R R 1N5624/G/GP 1N5625/G/GP 1N5626/G/GP 1N5627/G/GP , Z Z Z Z Z Z Z Z red types = original Diotec devices black types = equivalent Diotec
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BA159 equivalent B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G

thomson Ferrite Materials b50 2500

Abstract: orega is over). This feature allows to reduce the equivalent drain capacitance energy, that is dissipated , C d V Irms 2 sw 2 Where Cd is the equivalent drain capacitance. BOOSTER DIODE The booster , -400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 250V , EQUIVALENT (OREGA 473201A7) primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap , Application Circuit (120W, 220VAC) D1 BYT13-600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A
STMicroelectronics
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thomson Ferrite Materials b50 2500 orega ac-dc converter full wave type schematic diagram 3kw pfc PFC 3kw larcet power supply D95IN282A

CD MAGNETIC PULSER

Abstract: diode BY255 dc zero (after the current through the boost diode is over). This feature allows to reduce the equivalent , the equivalent drain capacitance. BOOSTER DIODE The booster freewheeling diode is a fast recovery. The , % BRIDGE + 4 x BY255 FUSE 4A/250V Vac (85V to 135V) R10 16K 1% D3 1N4150 D2 1N5248B R2 100 5% 10nF , THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A7) primary 90T of Litz wire 10 x 0.2mm , =400V Po=120W R3 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V Vac (175V to 265V) R10 6.2K 1% D3 1N4150 D2
STMicroelectronics
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CD MAGNETIC PULSER diode BY255 dc D94IN119 schematic diagram AC to DC converter 100W schematic diagram AC to DC converter high output AN667 L6560

3kw pfc

Abstract: thomson Ferrite Materials b50 2500 equivalent drain capacitance energy, that is dissipated by the external Mosfet, because of the lower , : P cap = 1 C d V Irms 2 sw 2 Where Cd is the equivalent drain capacitance. BOOSTER DIODE , -400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 250V , EQUIVALENT (OREGA 473201A7) primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap , Application Circuit (120W, 220VAC) D1 BYT13-600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A
STMicroelectronics
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ETD29 Thomson-CSF film capacitors thomson ferrites Thomson-CSF ferrites vrms for 240v input 20v output transformer BY255 diode

thomson Ferrite Materials b50 2500

Abstract: 3kw pfc feature allows to reduce the equivalent drain capacitance energy, that is dissipated by the external , Irms 2 sw 2 te le Where Cd is the equivalent drain capacitance. so Ob - As N is , (100W, 110VAC) + D1 BYT03-400 R3 R2 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V , 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A7) primary 90T of Litz wire 10 x 0.2mm secondary 11T of , + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V R2 R7 1M 1% 4.7nF 5
STMicroelectronics
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COIL 1mH multi gap inductor core AIR FLOW DETECTOR FULL REPORT PM1200 AC emi filter 240V ETD29 110

Thomson-CSF ferrites

Abstract: BY255 equivalent equivalent drain capacitance energy, that is dissipated by the external Mosfet, because of the lower , : P cap = 1 C d V Irms 2 sw 2 Where Cd is the equivalent drain capacitance. BOOSTER DIODE , -400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 250V , EQUIVALENT (OREGA 473201A7) primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap , Application Circuit (120W, 220VAC) D1 BYT13-600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A
STMicroelectronics
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ferrite core B51 pfc ferrite core transformer 5v secondary

3kw smps pfc

Abstract: 3kw half bridge smps BYT03-400 R3 D3 1N4150 68K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 , ) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 11T of #27 AWG (0.15mm) gap 1.9mm for , -600 R3 D3 1N4150 220K 5% BRIDGE + 4 x BY255 FUSE 4A/250V 100 5% D2 1N5248B C1 1µF 400V , THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT primary 90T of Litz wire 10 x 0.2mm secondary 7T of
STMicroelectronics
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L4981A L4981B L4981 3kw smps pfc 3kw half bridge smps 12v to Amplifier 200w circuit diagrams irf740 pins connections pwm power MOSFET IRF740 driver circuit L4981X L4981XD

ac-dc voltage regulator using SCR circuit diagram

Abstract: scr C10 MOSFET at turn-on reduces both the switching losses and the equivalent drain capacitance energy that is , TRANSFORMER T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A8) primary 90T of , inductance: 3mH + D1 BYT13-800 VCC BRIDGE + 4 x BY255 Vo=320V Po=140W C2 22µF 25V 6
STMicroelectronics
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AN966 L6561 ac-dc voltage regulator using SCR circuit diagram scr C10 l6561 flyback pfc ac to dc power factor correction boost topology l6561 in boost LM358 STP5N80 D97IN681

LM358 comparator ic L6561

Abstract: L6561 AN966 MOSFET at turn-on reduces both the switching losses and the equivalent drain capacitance energy that is , (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A8) primary 90T of Litz wire 10 x 0.2mm secondary 7T , inductance: 3mH + D1 BYT13-800 VCC BRIDGE + 4 x BY255 Vo=320V Po=140W C2 22µF 25V 6
STMicroelectronics
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LM358 comparator ic L6561 L6561 AN966 schematic 150W lamp ballast 220v AC voltage regulator schematic diagram igbt based l6561 flyback pfc led flyback 150W schematic diagram

ac-dc voltage regulator using SCR circuit diagram

Abstract: ETD 49 ferrite core equivalent drain capacitance energy that is dissipated inside the external MOSFET. The resulting inductor , EQUIVALENT (OREGA 473201A8) primary 90T of Litz wire 10 x 0.2mm secondary 7T of #27 AWG (0.15mm) gap , (0.15mm) primary inductance: 3mH + D1 BYT13-800 VCC BRIDGE + 4 x BY255 Vo=320V Po
STMicroelectronics
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ETD 49 ferrite core mosfet triggering circuit 20khz frequency HP6813A B1ET2910 BYW80-150 s170
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