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Part : BUZ36 Supplier : Siemens Semiconductors Manufacturer : Bristol Electronics Stock : 4 Best Price : - Price Each : -
Part : BUZ36 Supplier : siemens Manufacturer : ComSIT Stock : 20 Best Price : - Price Each : -
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BUZ36 Datasheet

Part Manufacturer Description PDF Type
BUZ36 Philips Semiconductors PowerMOS Transistor Original
BUZ36 N/A Shortform Datasheet & Cross References Data Scan
BUZ36 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ36 N/A Semiconductor Master Cross Reference Guide Scan
BUZ36 N/A FET Data Book Scan
BUZ36 Semelab MOS Power Transistor Scan
BUZ36 Siemens SIPMOS Power Transistor Scan
BUZ36 Siemens Power Transistors Scan
BUZ360 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ360 Siemens main ratings Scan
BUZ361 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ361 Siemens main ratings Scan
BUZ361 Siemens Power Transistors Scan

BUZ36

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ~ N ANER P H I L I P S / D I S C R E T E OtE" D BUZ36_ M LLS3T31 D D , _ _ BUZ36_ N AMER PHILIPS/DISCRETE DbE D â  bbS3*131 0014b2fl b â , PHILIPS/DISCRETE DbE D BUZ36_ _ * â  bbS3T31 OOmbET fl T-39-13 Fig.3 Typical , 25 C. 315 PowerMOS transistor_ BUZ36_ N AMER PHILIPS , f' T-39-13 PowerMOS transistor_ BUZ36_ _ _ _ -
OCR Scan
S3T31

BUZ36

Abstract: T-39 envelopes. 312 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor_ _BUZ36 N , Manufacturer PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ36 â¡ bE D bki53li31 OOmbET a 140 W 120 , Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ36 N AMER PHILIPS/DISCRETE , 316 ft This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ36 N , Copyrighted By Its Respective Manufacturer PowerMOS transistor_ N AMER"PHILIPS/DISCRETE BUZ36 ObE D
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OCR Scan
T-39 53T31 S3131

IEF520

Abstract: BUZ10A N-CH T03 200 0. 4 9.9 78 BUZ36 EEQ N-CH T03 200 0. 12 22 125 BUZ41A N-CH T0220 500 1. 5 4.5 75
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OCR Scan
BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 IEF520 BUZ10A T0220H BUZ63

BUZ36

Abstract: transistor buz 36 SIEMENS SIPMOS® Power Transistor â'¢ N Channel â'¢ Enhancement mode â'¢ Avalanche-rated BUZ 36 Type VDS h ^OS(on) Package 1> Ordering Code BUZ36 200 V 22 A 0.12Ã2 TO-204 AE C67078-S1018-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, Tc = 33 °C Id 22 A Pulsed drain current, Tc = 25 °C /q puis 88 Avalanche current, limited by T)max /ar 22.0 Avalanche energy, periodic limited by 7] (max) Ear 13 mj Avalanche energy, single pulse ID = 22 A, VDD = 50 V, Ras
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OCR Scan
transistor buz 36 din 982 SiEMENS PM 350 98 88 diode C160 GL763S

BUZ36

Abstract: , One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ36 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL 'VDS ID Plot RDS(ON) PARAMETER MAX. UNIT Drain-source
New Jersey Semiconductor
Original

2N6801-SM

Abstract: BFC49 BUZ10A BUZ 11 BUZ11A BUZ20 BUZ21 BUZ23 BUZ24 BUZ25 BUZ31 BUZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45
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OCR Scan
2N6801-SM BFC49 2N6800SM 2N6801 2N6801LCC4 2N6802 2N6802SM

MTM13N50E

Abstract: P40N10 ir tmos Industry Part Number BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 BUZ32 BUZ34 BUZ36 BUZ41A BUZ42 BUZ45B BUZ60 BUZ71 BUZ71A BUZ71L BUZ72A BUZ72 BUZ76A BUZ73A BUZ73 BUZ35 BUZ60B BUZ90A BUZ94 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from
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OCR Scan
TP2955 TP8N20 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e TP20N06 TP36N06E MTP36N06E MTM50N05E MTP12N10E

BUZ901P

Abstract: BUZ900P -3 Polarity: Industry Type: BUZ36 STI Type: BUZ361 Notes: Breakdown Voltage: 800 Continuous Current: 2.9 , : 2.5 Case Style: TO-247 Polarity: Industry Type: BUZ358 STI Type: BUZ360 Notes: Breakdown Voltage , toff: 140 Resistance Switching ID: 2.3 Case Style: TO-247 Polarity: Industry Type: BUZ360 STI Type: BUZ36 Notes: Breakdown Voltage: 200 Continuous Current: 22 RDS(on) Ohm: .12 Trans Conductance Mhos , : 2.1 Case Style: TO-247 Polarity: Industry Type: BUZ361 STI Type: 2N5840 Notes: *BVCER Polarity
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Original
BUZ345 DTS410 BUZ901P BUZ900P BUZ900 d44c3 BUZ77 BUZ900D BUZ341 BUZ344 BUZ346 BUZ346S2 DTS4074

FET BFW10

Abstract: KP101A BUZ14 BUZ15 BUZ20 BUZ21 BUZ23 BUZ24 BUZ25 BUZ31 BUZ32 BUZ34 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45A BUZ45B
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OCR Scan
BA583 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BA220 BA221 BA223 BA281 BA314 BA315

sn76131

Abstract: tlo72cp BUZ33 BUZ34 BUZ35 BUZ35A BUZ36 BUZ40 BUZ41 BUZ41A BUZ42 BUZ42A BUZ43 BUZ44 BUZ44A BUZ44B BUZ45 BUZ45A
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Original
sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510

Cross Reference power MOSFET

Abstract: irf 3502 mosfet BUZ3611' 2.9 1.67 4.5 75 A3200-A2 BUZ3761' 6.5 1 1.5 125 A3211-A2 BUZ3771' 5.5 1 2 125 A3212-A2 , 9.9 1.6 0.4 78 s A1014-A2 BUZ362) 22 1 0.12 125 E3 A1018-A2 BUZ63 400 5.9 1.6 1 78 ED A1016-A2
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OCR Scan
Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram TQ-220AC T0-204AA T0-204AE T0-220AB T0-220AC

cm .02m z5u 1kv

Abstract: pin configuration of BFW10 55 · BUZ308 BUZ80 BUZ80 BUZ80 IRFBE30 BUZ83 BUZ83 BUZ83 BUZ361 BUZ307 BUZ80A BUZ80A BUZ80A
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OCR Scan
cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 fx4054 core TDA3653 equivalent BS9000 D3007 HE4000B

transistor f6 13003

Abstract: equivalent transistor bj 131-6 BUZ360 SIEMENS AKTIENGESELLSCHAF - Typical drain-source on-state resistance «OS (an) = (Id
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OCR Scan
transistor f6 13003 equivalent transistor bj 131-6 BB112 tunnel diode BFQ25 BU705

IGBT M16 100-44

Abstract: Kt606 PowerMOS transistor_ BUZ36 N AMER PHILIPS/DISCRETE DbE D â  t.bS3T31 , ~ N ANER P H I L I P S / D I S C R E T E OtE" D BUZ36_ M LLS3T31 D D , _ _ BUZ36_ N AMER PHILIPS/DISCRETE DbE D â  bbS3*131 0014b2fl b â , PHILIPS/DISCRETE DbE D BUZ36_ _ * â  bbS3T31 OOmbET fl T-39-13 Fig.3 Typical , 25 C. 315 PowerMOS transistor_ BUZ36_ N AMER PHILIPS
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OCR Scan
IGBT M16 100-44 Kt606 transistor 8BB smd ASEA HAFO AB SEMICON INDEXES GM378 VV276

8N60 equivalent

Abstract: IRFD1Z3 equivalent envelopes. 312 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor_ _BUZ36 N , Manufacturer PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ36 â¡ bE D bki53li31 OOmbET a 140 W 120 , Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ36 N AMER PHILIPS/DISCRETE , 316 ft This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ36 N , Copyrighted By Its Respective Manufacturer PowerMOS transistor_ N AMER"PHILIPS/DISCRETE BUZ36 ObE D
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OCR Scan
8N60 equivalent IRFD1Z3 equivalent siemens semiconductor manual 2N6823 MTM5N90 designers datasheet TP8N10 4000D 4001D L001A 4501D 4502D P002A

IRF 544 N MOSFET

Abstract: 4af2NPP IR N-CH T03 200 0. 4 9.9 78 BUZ36 EEQ N-CH T03 200 0. 12 22 125 BUZ41A N-CH T0220 500 1. 5 4.5 75
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OCR Scan
IRF 544 N MOSFET 4af2NPP IR transistor D586 Spice 2 computer models for hexfets jrc 2115 equivalent gi 9424 diode

Kt606

Abstract: NT101 , One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ36 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and DC/AC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL 'VDS ID Plot RDS(ON) PARAMETER MAX. UNIT Drain-source
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OCR Scan
NT101 bf503 KT-934 ss120a Ma040 2N3520 T0226 T0237
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