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Part : BUZ111S Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 3,249 Best Price : $1.07 Price Each : $1.07
Part : BUZ111SL-E3045A Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 2,000 Best Price : $1.07 Price Each : $1.07
Part : BUZ111SLE3045A Supplier : Siemens Manufacturer : Rochester Electronics Stock : 2,000 Best Price : $1.07 Price Each : $1.07
Part : BUZ111S Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 8,800 Best Price : - Price Each : -
Part : BUZ111S Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 4 Best Price : - Price Each : -
Part : BUZ111SE3045 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 2,000 Best Price : - Price Each : -
Part : BUZ111SE3045A Supplier : Siemens Manufacturer : ComSIT Stock : 215 Best Price : - Price Each : -
Part : BUZ111S Supplier : Infineon Technologies Manufacturer : Chip One Exchange Stock : 358 Best Price : - Price Each : -
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BUZ111S Datasheet

Part Manufacturer Description PDF Type
BUZ111S Infineon Technologies SIPMOS Power Transistor Original
BUZ111S Siemens Original
BUZ111S Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) Original
BUZ111S Toshiba Power MOSFETs Cross Reference Guide Original
BUZ111SE3045 Infineon Technologies SIPMOS Power Transistor Original
BUZ111S-E3045 Infineon Technologies SIPMOS Power Transistor Original
BUZ111SE3045A Infineon Technologies Sipmos Power Transistor Original
BUZ111SE3046 Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ111SL Infineon Technologies SIPMOS Power Transistor Original
BUZ111SL Siemens Original
BUZ111SL Siemens SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Original
BUZ111SL Toshiba Power MOSFETs Cross Reference Guide Original
BUZ111SL-E3045 Infineon Technologies SIPMOS Power Transistor Original
BUZ111SLE3045 Infineon Technologies SIPMOS Power Transistor Scan
BUZ111SLE3045A Infineon Technologies N-Channel SIPMOS Power Transistor Original
BUZ111SL-E3045A Infineon Technologies SIPMOS Power Transistor Original
BUZ111SLE3045A Infineon Technologies SIPMOS Power Transistor Scan

BUZ111S

Catalog Datasheet MFG & Type PDF Document Tags

BUZ111S

Abstract: Q67040-S4003-A2 BUZ111S SPP80N05 SIPMOS ® Power Transistor · N channel · Enhancement mode · , Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111S 55 V 80 A , 20 P tot TC = 25 °C Semiconductor Group V W 250 1 28/Jan/1998 BUZ111S , /1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified , BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter
Siemens
Original
Q67040-S4003-A2

BUZ111S

Abstract: Q67040-S4003-A2 BUZ111S Preliminary data SPP80N05 SIPMOS ® Power Transistor · N channel · Enhancement mode , S Type VDS ID RDS(on) Package Ordering Code BUZ111S 55 V 80 A 0.008 , TC = 25 °C Semiconductor Group V W 250 1 04/Nov/1997 BUZ111S Preliminary data , , ID = 80 A Semiconductor Group nA - 2 0.0065 0.008 04/Nov/1997 BUZ111S , charge total nC V - 3 5.45 04/Nov/1997 BUZ111S Preliminary data SPP80N05
Siemens
Original

SPP80N05

Abstract: BUZ111S BUZ111S SPP80N05 SIPMOS ® Power Transistor · N channel · Enhancement mode · , Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111S 55 V 80 A , 20 P tot TC = 25 °C Semiconductor Group V W 250 1 28/Jan/1998 BUZ111S , /1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified , BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter
Siemens
Original

buz111S

Abstract: BUZ 32 SMD temperature Type Package Ordering Code Packaging BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A Pin 2 Pin 3 P-TO263-3-2 Q67040-S4003-A6 Tape and Reel BUZ111S E3045 Pin 1 , = f (TC) ID = f (TC ) parameter: VGS 10 V BUZ111S BUZ111S 90 320 A W 70 , : D = 0 , T C = 25 °C parameter : D = tp /T 10 3 BUZ111S 10 1 BUZ111S K/W tp = , (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS BUZ111S 190 BUZ111S
Infineon Technologies
Original
BUZ 32 SMD Q67040-S4003-A5

diode smd marking BUZ

Abstract: TRANSISTOR 023 3010 BUZ111S P-T0220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A P-T0263-3-2 Q67040-S4003-A6 Tape and Reel BUZ111S , ^DS Drain current b = /(7c) parameter: Ifes ^ 10 V BUZ111S 90 a \ 0 20 40 60 80 100 120 140 16c 'c , / / / / / / / / Typ. gate charge VGS=f (Osate) parameter: Iq pu|s = 80 A BUZ111S 16 v w 10
-
OCR Scan
diode smd marking BUZ TRANSISTOR 023 3010 G1337 diode smd m7 smd marking ACH TRANSISTOR AO SMD MARKING P-T0262-3-1/ G13377 P-T0263-3-2/D2PAK GPT09085 SQT-23 X23-3-1

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY 55V UltraFET MOSFETs Competitive Cross Reference PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRF1010NS IRF3205 IRF3205L IRF3205S IRFZ24A IRFZ24N IRFZ34N IRFZ34NS IRFZ44A IRFZ44N IRFZ44NS IRFZ48N IRFZ48NS MTB52N06V TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-263 TO-220 TO-262 TO-263 TO
Harris Semiconductor
Original
HRF3205 HUF75329P3 NBP6060 LC-98045 IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N IRF3205 TO-220 HUF75337P3 HUF75321P3 HUF75309P3 HUF75339P3

CURRENT LIMITING LOW SIDE DRIVER

Abstract: TLE6280GP of a BUZ111S and its output characteristic in figure 6. A maximum current of 100A is assumed. This , 11 HL PS TM 2 - 6/99 Figure 6: Output characteristic of the BUZ111S Draft 2.5 The dI/dt
Siemens
Original
TLE6280GP CURRENT LIMITING LOW SIDE DRIVER electric assisted power steering system motor GH mosfet MOSFETs Application Hints 6280GP TLE6280G

IRF9634

Abstract: MJE13001 BUZ91A 600 0.9 8.0 ±20 150 2.0.4.0 TO-220 BUZ111S 320 0.008 80.0
INTEGRAL
Original
KT817A KT817B IRF9634 MJE13001 KT538A KT8296 KT829 kt8290 KT6136A KT6137A KT660A KT660 KT814A KT814

fqp60n06

Abstract: SSH6N80 BUZ103SL BUZ104 BUZ104S BUZ104SL BUZ11 BUZ110S BUZ110SL BUZ111S BUZ11A BUZ20 BUZ22 BUZ305
STMicroelectronics
Original
fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L

wiring diagram for float switch for pumps

Abstract: BUZ111S of this value is shown by example of a BUZ111S and its output characteristic in fig. 11. A maximum , .11: Output characteristic of the BUZ111S Application Note page 12 of 20 V2.1 Draft, 2002-7
Infineon Technologies
Original
wiring diagram for float switch for pumps C164 TLE 6280 GP 80N04 electric cooling water pump engine car parking aid circuit automotive

buz111s motor 24v

Abstract: flow switch water pump circuit diagram for 3 phase of this value is shown by example of a BUZ111S and its output characteristic in fig. 11. A maximum , .11: Output characteristic of the BUZ111S Application Note page 12 of 20 V2.1 Draft, 2002-7
Infineon Technologies
Original
buz111s motor 24v flow switch water pump circuit diagram for 3 phase Infineon automotive semiconductor process technology Electrohydraulic Power Steering temperature dependent speed regulator for fans abstract

TLE5205 cross

Abstract: tle6205 =10A I=12A Rthja=30K/W BUZ101S(L), SPD21N05L BUZ102S(L), BUZ111S(L) Rthja=10K/W BUZ104S(L
Infineon Technologies
Original
TLE6209 TLE5205 cross tle6205 c167 ecu ECU PWM Throttle Position Sensor C515C

SSH6N80

Abstract: rfp60n06 BUZ102AL BUZ102SL BUZ103 BUZ103S BUZ103SL BUZ104 BUZ104S BUZ104SL BUZ11 BUZ110S BUZ110SL BUZ111S
STMicroelectronics
Original
2SK2717 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 STMicroelectronics BUZ10 BUZ71 BUZ71A BUZ72A BUZ80A IRF520

fqp60n06

Abstract: spb32N03l BUZ103SL BUZ104 BUZ104S BUZ104SL BUZ11 BUZ110S BUZ110SL BUZ111S BUZ11A BUZ20 BUZ22 BUZ305
STMicroelectronics
Original
FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 HGTG*N60A4D irf630 irf640 YTAF630 STP80NE03L-06 STS4DPF30L STB70NF03L STB55NF03L STW18NB40 STS8NFS30L

2N5101

Abstract: BUY46 BUZ104 BUZ111S BUZ111SL BUZ110S BUZ100S BUZ110SL BUZ100SL BUZ102S BUZ102SL BUZ103S BUZ103SL
-
Original
BUZ342 2N5101 BUY46 BUW32 BUS13A BUV21 ISO BUZ171 equivalent 2N5050 2N5052 2N5055 2N5056 2N5057 2N5058

IRF540 complementary

Abstract: IRFZ44N complementary BUZ103SL BUZ104 BUZ104L BUZ104S BUZ104SL BUZ10L BUZ10S2 BUZ11 BUZ110S BUZ110SL BUZ111S BUZ111SL
STMicroelectronics
Original
STP3N60FI IRF540 complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 ste38na50 IRF630 complementary RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L

YTA630

Abstract: MTW14P20 ­ Continuous drain current , 25 °C ¡M / -DC 10' V 10 ' - Vos Drain current b = HTc) parameter: Vqs - 10 V BUZ111SL 90 , A, VDD = 25 V Drain-source breakdown voltage ^(BR)DSS =' (7j) BUZ111SL
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401

FDS 4800

Abstract: smd transistor 9f8 BUZ111SL Preliminary data SPP80N05L SIPMOS ® Power Transistor · N channel · Enhancement , G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V , 14 Ptot TC = 25 °C Semiconductor Group V W 250 1 04/Nov/1997 BUZ111SL , BUZ111SL Preliminary data SPP80N05L Electrical Characteristics, at Tj = 25°C, unless otherwise , = 80 A, VGS = 5 V Gate charge total nC V - 3 3.4 04/Nov/1997 BUZ111SL
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OCR Scan
FDS 4800 smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 TRANSISTOR SMD MARKING CODE BS s 111SL Q67040-S4002-A2 Q67040-S4002-A6 Q67040-S4002-A5 G13345 G13B77

BUZ111SL

Abstract: SPP80N05L BUZ111SL SPP80N05L SIPMOS ® Power Transistor · N channel · Enhancement mode · Logic Level , Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL , BUZ111SL SPP80N05L Maximum Ratings Parameter Symbol Values Operating temperature Tj -55 , 0.0055 0.007 Semiconductor Group 2 28/Jan/1998 BUZ111SL SPP80N05L Electrical , to 5 V Gate charge total nC Qg(th) - 3 3.4 - 28/Jan/1998 BUZ111SL
Siemens
Original

SPP80N05L

Abstract: Q67040-S4003-A2 of this value is shown by example of a BUZ111S and its output characteristic in fig. 11. A maximum , .11: Output characteristic of the BUZ111S Application Note page 12 of 20 V2.1 Draft, 2002-7
Siemens
Original

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ91A 600 0.9 8.0 ±20 150 2.0.4.0 TO-220 BUZ111S 320 0.008 80.0
Siemens
Original
BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615NV PL-03-821 B152-H6493-G5-X-7600

Dual N- AND P-Channel Power FET TO-220 PACKAGE

Abstract: buz102 of this value is shown by example of a BUZ111S and its output characteristic in fig. 11. A maximum , .11: Output characteristic of the BUZ111S Application Note page 12 of 20 V2.1 Draft, 2002-7
Siemens
Original
Dual N- AND P-Channel Power FET TO-220 PACKAGE buz102 p-channel fet to-220 BSP 220 equivalent 100S 101S T0-220 P-DSO-28
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