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Part : BUZ100S Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 6,388 Best Price : $0.56 Price Each : $0.69
Part : BUZ100S-E3045A Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 34,000 Best Price : $0.56 Price Each : $0.69
Part : BUZ101L Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 5,075 Best Price : $0.29 Price Each : $0.36
Part : BUZ101SL Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 23,800 Best Price : $0.29 Price Each : $0.36
Part : BUZ102SL Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 123,056 Best Price : $0.43 Price Each : $0.53
Part : BUZ102SL-E3045A Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 73,903 Best Price : $0.43 Price Each : $0.53
Part : BUZ103SL Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 58,489 Best Price : $0.32 Price Each : $0.40
Part : BUZ103SL-E3045A Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 1,000 Best Price : $0.43 Price Each : $0.53
Part : BUZ103ALE3045A Supplier : Infineon Technologies Manufacturer : America II Electronics Stock : 4,825 Best Price : - Price Each : -
Part : BUZ100S E3045A Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 2,840 Best Price : $0.4388 Price Each : $1.6875
Part : BUZ101SL E3045A Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 850 Best Price : $0.3360 Price Each : $1.20
Part : BUZ10 Supplier : Siemens Manufacturer : ComSIT Stock : 34,825 Best Price : - Price Each : -
Part : BUZ100 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 1,000 Best Price : - Price Each : -
Part : BUZ100E3044 Supplier : Siemens Manufacturer : ComSIT Stock : 6,545 Best Price : - Price Each : -
Part : BUZ101L Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 54,497 Best Price : - Price Each : -
Part : BUZ101S Supplier : Siemens Manufacturer : ComSIT Stock : 938 Best Price : - Price Each : -
Part : BUZ102SLE3045A Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 445 Best Price : - Price Each : -
Part : BUZ103 Supplier : Siemens Manufacturer : ComSIT Stock : 72 Best Price : - Price Each : -
Part : BUZ104L Supplier : Siemens Manufacturer : ComSIT Stock : 800 Best Price : - Price Each : -
Part : BUZ104S Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 46,240 Best Price : - Price Each : -
Part : BUZ10 Supplier : STMicroelectronics Manufacturer : Chip One Exchange Stock : 28 Best Price : - Price Each : -
Part : BUZ102S Supplier : Infineon Technologies Manufacturer : Chip One Exchange Stock : 448 Best Price : - Price Each : -
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BUZ10 Datasheet

Part Manufacturer Description PDF Type
BUZ10 Infineon Technologies Transistor Mosfet N-CH 50V 23A 3TO-220AB Original
BUZ10 Philips Semiconductors PowerMOS Transistor Original
BUZ10 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS Original
BUZ10 STMicroelectronics N - Channel 50 V - 0.06 ohm - 23 A TO-220 STripFET MOSFET Original
BUZ10 STMicroelectronics N-CHANNEL 50V - 0.06 Ohm - 23A -TO-220 STripFET POWER MOSFET Original
BUZ10 STMicroelectronics N-Channel 50V - 0.06Ohm - 23A TO-220 STripFET MOSFET Original
BUZ10 Toshiba Power MOSFETs Cross Reference Guide Original
BUZ10 Motorola European Master Selection Guide 1986 Scan
BUZ10 N/A Shortform Transistor PDF Datasheet Scan
BUZ10 N/A Shortform Datasheet & Cross References Data Scan
BUZ10 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUZ10 N/A Semiconductor Master Cross Reference Guide Scan
BUZ10 N/A FET Data Book Scan
BUZ10 Semelab MOS Power Transistor Scan
BUZ10 Siemens Power Transistors Scan
BUZ10 STMicroelectronics Shortform Data Book 1988 Scan
BUZ100 Siemens Original
BUZ100 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) Original
BUZ100 Toshiba Power MOSFETs Cross Reference Guide Original
BUZ100 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

BUZ10

Catalog Datasheet MFG & Type PDF Document Tags

buz10

Abstract: ® BUZ10 N - CHANNEL 50V - 0.06 - 23A TO-220 STripFETTM MOSFET T YPE BUZ 10 s s s s s V , July 1999 1/8 BUZ10 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case , V GS = 10 V Min. Typ. 20 45 48 10 Max. Unit ns ns ns ns 2/8 BUZ10 ELECTRICAL CHARACTERISTICS , Area Thermal Impedance 3/8 BUZ10 Output Characteristics Transfer Characteristics , Variations 4/8 BUZ10 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs
STMicroelectronics
Original
P011C

BUZ10

Abstract: buz10 MOROCCO BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 s s s s s s s V , Tj Value 80 W -65 to 175 o C 175 o C E 55/150/56 1/7 BUZ10 , 50 ID = 3 A V GS = 10 V Min. BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN , Characteristics 3/7 BUZ10 Transfer Characteristics Transconductance Static Drain-Source On , Variation 4/7 BUZ10 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance
STMicroelectronics
Original
buz10 MOROCCO

BUZ10

Abstract: buz10 equivalent BUZ10 ® N - CHANNEL 50V - 0.06 - 23A TO-220 STripFETTM MOSFET T YPE s s s s s R , characterized in this datasheet. February 2000 1/8 BUZ10 THERMAL DATA R thj -case R thj -amb , 45 48 10 Max. Unit ns ns ns ns BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE , duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance 3/8 BUZ10 Output , Charge vs Gate-source Voltage Capacitance Variations 4/8 BUZ10 Normalized Gate Threshold
STMicroelectronics
Original
buz10 equivalent stmicroelectronics datecode

BUZ10

Abstract: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS s s s s s s s ID 50 V BUZ10 R DS( on) < 0.07 20 A TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED , ) November 1996 80 W -65 to 175 o C 175 o C E 55/150/56 1/7 BUZ10 THERMAL , V GS = 10 V Min. BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol , /7 BUZ10 Transfer Characteristics Transconductance Static Drain-Source On Resistance
STMicroelectronics
Original

BUZ10

Abstract: BUZ10 ® N - CHANNEL 50V - 0.06 - 23A TO-220 STripFETTM MOSFET TYPE s s s s R DS(on) ID 50 V BUZ10 s V DSS < 0.07 23 A TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED , in this datasheet. February 2000 1/8 BUZ10 THERMAL DATA R thj-case R thj-amb Thermal , BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test , Safe Operating Area Thermal Impedance 3/8 BUZ10 Output Characteristics Transfer
STMicroelectronics
Original

buz10

Abstract: BUZ10 N - CHANNEL 50V - 0.06ft - 23A -TO-220 STripFETâ"¢ POWER MOSFET TYP E BUZ10 â  . . , BUZ10 THERMAL DATA Rthj-case Rthj-amb 2.0 62.5 °C/W °C/W V alu e Unit A valanche C , ns ns ns ns BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Sym bol ISD , duration = 300 jxs, duty cycle 1.5 % 3/6 BUZ10 Fig. 1 : Unclamped Inductive Load Test Circuit , Recovery Times 4/6 BUZ10 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN
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OCR Scan

buz10 equivalent

Abstract: BUZ10 BUZ10 ® N - CHANNEL 50V - 0.06 - 23A -TO-220 STripFETTM POWER MOSFET T YPE s s s s s V DSS R DS(on) ID 50 V BUZ10 < 0.07 23 A TYPICAL RDS(on) = 0.06 AVALANCHE , characterized in this datasheet. September 1998 1/6 BUZ10 THERMAL DATA R thj -case R thj -amb , 45 48 10 Max. Unit ns ns ns ns BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE , duration = 300 µs, duty cycle 1.5 % 3/6 BUZ10 Fig. 1: Unclamped Inductive Load Test Circuit Fig
STMicroelectronics
Original
buz10 equivalent input id datecode G1 st 220 f1
Abstract: . PowerMOS transistor_-_ BUZ10_ N AMER PHILIPS/DISCRETE , _ BUZ10_ _ N AtlER PHILIPS/DISCRETE ObE D â  13^53^31 D0143flb f â , ns. 72 PowerMOS transistor_ . BUZ10_ N AMER PHILIPS/DISCRETE , N AUER PHILIPS/DISCRETE OLE D â  PowerMOS transistor bb53T31 0014331 1 â  BUZ10 , transistor bbSBTBl DD143flE 0 BUZ10 T-39-11 RATINGS Limiting values in accordance with the -
OCR Scan
53T31 DD143 7Z21187 D0143 7Z21184

buz10 MOROCCO

Abstract: BUZ10 BUZ10 ® N - CHANNEL 50V - 0.06 - 23A TO-220 STripFETTM MOSFET TYPE s s s s s R DS(on) ID 50 V BUZ10 V DSS < 0.07 23 A TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED , in this datasheet. February 2000 1/8 BUZ10 THERMAL DATA R thj-case R thj-amb Thermal , BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test , Thermal Impedance let o bs O 3/8 BUZ10 Output Characteristics Transfer Characteristics
STMicroelectronics
Original
morocco buz10
Abstract: *57 TYPE BUZ10 SGS-THOMSON !L iO T ® iQ (£ I B U Z 1 0 N - CHANNEL ENHANCEMENT MODE POWER , Novem ber 1996 1/7 BUZ10 THERMAL R lh j - c a s e R lh j -a m b DATA T h e rm a l T h e , SGS-THOMSON *T# RKHsiiiLiieiragrcioes BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN , SGS-THOMSON 3/7 BUZ10 Transfer Characteristics T ransconductance Static Drain-Source On , Variation 4/7 / I T SGS-THOMSON *T# RKHsiiiLiieiragrcioes BUZ10 Normalized Gate Threshold -
OCR Scan

buz10

Abstract: ^TÆ, M oe m itgTM O igi / = 7 SGS-THOMSON BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE BUZ10 V DSS R DS(on) 50 V 0.08 Q 20 A · HIGH SPEED SWITHING · LOW Rds (0N) · EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS: · AUTOMOTIVE , °C °C V ds VDG R VGS b ·dm P«ot T stg Tl June 1988 1/3 159 BUZ10 THERMAL DATA , /IT SCS-THOMSON BUZ10 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min. Typ
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OCR Scan
10OA/

EL125

Abstract: SILICONIX INC 1ÖE D Ô254735 0014501 1 J I1 5 S 6 BUZ10 T-31-U N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW PRODUCT SUMMARY V(BR|DSS 50 Q.08 Id (A) 20 1 GATE 2 , T-39-11 ^arj^ted LIMITS BUZ10 PARAMETER STATIC Drain-Sourca Breakdown Voltage Gate Threshold , 7 3 SQ 0 1 4 5 Ö 35 T -3 9 -1 1 BUZ10 Output Characteristics TYPICAL CHARACTERISTICS (25 , d BUZ10 TYPICAL CHARACTERISTICS (Cont'd) Ftgure 7. 1.75 On-Resistance vs. Junction Temperature
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OCR Scan
EL125
Abstract: S G S -T H O M S O N 1 H D BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 V dss R D S (o n ) 0.0 8 n Id 50 V 20 A . AVALANC HE RUG G EDN ESS TEC HNO LO G Y , to 175 175 E 55/1 50 /5 6 U n it V V V A A W °C °c April 1992 1/5 59 BUZ10 , SCS-THOMSON * 7 1 MGBSiQJSmrBia®«# BUZ10 ELECTRICAL CHAR A C TERISTICS (continued) SOURCE DRAIN DIODE , 3/5 61 BUZ10 Transfer Characteristics Transconductance Static Drain-Source On -
OCR Scan

schematic diagram reverse forward motor

Abstract: ^ 7 #, HD©®@ilLI(OT©iD©Ì i^ 7 SCS-THOMSON BUZ 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE BUZ10 V DSS RDS(on) 50 V 0.08 Q Id 20 A · HIGH SPEED SWITHING · LOW R ds (0N) · EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS'. · , BUZ10 THERMAL DATA Rthj . caSe Thermal resistance junction-case R,hj . amb Thermal resistance , *0aiiCTi»e)iMiie* rZZ SCS-THOMSON BUZ10 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test C
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OCR Scan
schematic diagram reverse forward motor

transistor BUZ10

Abstract: K 3911 N AMER PHILIPS/DISCRETE OLE D â  bbS3 , transistor â'" BUZ10 T-39-11 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC , Respective Manufacturer PowerMOS transistor BUZ10 N AMER PHILIPS/DISCRETE ObE D tibSiTHl 0014365 t. T , . 72 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ10 N AMER
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OCR Scan
T0220AB transistor BUZ10 K 3911 transistor k 3911 D143 T0220 S3T31 7Z21188 7Z211S7

BUZ10M

Abstract: 6 3 6 7 2 5 4 MOTOROLA SC ( X S T R S / R F> 89D 7 8 2 0 0 GD7fl20Q 1 MOTOROLA AT D E |t.3 b ? a S 4 - r - ß ? - // Order this data sheet by BUZ10/D TECHNICAL DATA S E M IC O N D , . MOTOROLA BUZ10 6 3 6 7 2 5 4 MOTOROLA SC ( X S T R S / R F ) 890 78202 D -p. J?-// 0Q7flSDE 2 , 10 A 1.2 o < O OE ·r o < cc o -E 0.8 , Semiconductors H.K. Ltd.; P.O. Box 80300; Cheung Sha Wan Post Office; Kowloon Hong Kong. J BUZ10 M 21216
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OCR Scan
BUZ10M BUZ10/D MK145BP C46I52
Abstract: Transductance1 B U Z 10 4.8 S (U ) Cus Input Capacitance BUZ10 3 1275 pF Coss , /W R th JA Junction-to-Ambient B U Z 10 30 °C/W BUZ10 - 1 9 .3 A B U Z 10 -
OCR Scan
LE174JB

Bow94c

Abstract: MTP3055A ISOWATT 220 BUZ71 F I 12 30 3 650 50 0.08 13 TO 220 BUZ10 20 70 8 700 § 50 0.04 15 TO 220 BUZ11 30 75 4 , TO 220 SGSP322 16 75 3 550 50 0.12 10 TO 220 BUZ10A 17 75 3 2000 50 0.12 9 TO 220 BUZ71A 13 40 3 , 9 ISOWATT 220 IRFZ20FI 12.5 30 5 850 50 0.08 13 TO 220 BUZ10 20 70 8 700 typ 50 0.08 12.5 TO 220
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OCR Scan
SGSP222 SGSP492 STVHD90 MTP3055A Bow94c IRFZ22 mosfet b0334 SGS137 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI

BSS97

Abstract: 2SK564 SÉSECOSIPMOSSnplcffllz., £ffiMOS-FET©*>J8ffifiD»i!\ « â'¢Â©ÃTfVÃS ín; â'¢ UPS ídc/dc^W^-mam&ñ&m SIPMOS-FETM^tt-K â â â â  lo OA) ti* f>r nu, tofsn â â â â  â â i BSS110 P 50 -0.2 -0.17 0.63 6.0 10.0 T092 BSS98 N 0.4 0.3 0.63 2.0 3.5 T092 BUZ71L N 20 14 40 0.06 0.1 T0220 BUZ71 N 20 12 40 0.09 0.1 ECONOFET T0220 BUZ10 N 32 23 75 0.06 0.07 ECONOFET T0220 BUZ11A N 37 26 75 0.048 0.055 ECONOFET T0220 BUZ11 N 43 30 75 0.03 0.04 T0220 2SK562
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OCR Scan
BUZ348 BSS100 2SK564 BSS101 BSS95 BSS97 J3303 2SK616 buz349 2SK562A BUZ347 2SK905 BUZ72

BUZ10A

Abstract: ISOWATT-220 SGSP222* 10 50 3 550 50 0.13 8 TO 220 SGSP322 16 75 3 550 50 0.12 10 TO 220 BUZ10A 17 75 3 2000 50 0.12 , 220 IRFZ20 15 40 5 850 50 0.1 9 ISOWATT 220 IRFZ20FI 12.5 30 5 850 50 0.08 13 TO 220 BUZ10 20 70 8
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OCR Scan
IRFZ22 SGSP382 IRFZ42 MTP15N06L ISOWATT-220 TO-220 MOS TO-220 sgsp482 IRFZ22FI BUZ71FI STLT29 SGSP482

KDS 7c

Abstract: ® BUZ10 N - CHANNEL 50V - 0.06 - 23A TO-220 STripFETTM MOSFET T YPE BUZ 10 s s s s s V , July 1999 1/8 BUZ10 THERMAL DATA R thj -case R thj -amb Thermal Resistance Junction-case , V GS = 10 V Min. Typ. 20 45 48 10 Max. Unit ns ns ns ns 2/8 BUZ10 ELECTRICAL CHARACTERISTICS , Area Thermal Impedance 3/8 BUZ10 Output Characteristics Transfer Characteristics , Variations 4/8 BUZ10 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs
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OCR Scan
KDS 7c Z10S2 C67078-S1300-A2 C67078-S1300-A7 BUZ10S2

transistor buz 10

Abstract: transistor Siemens 14 S S 92 Transductance1 B U Z 10 4.8 S (U ) Cus Input Capacitance BUZ10 3 1275 pF Coss , /W R th JA Junction-to-Ambient B U Z 10 30 °C/W BUZ10 - 1 9 .3 A B U Z 10
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OCR Scan
transistor buz 10 transistor Siemens 14 S S 92

BUZ 14

Abstract: C67078-S1300-A2 N AUER PHILIPS/DISCRETE OLE D â  PowerMOS transistor bb53T31 0014331 1 â  BUZ10 , transistor bbSBTBl DD143flE 0 BUZ10 T-39-11 RATINGS Limiting values in accordance with the , 0 1 4 3 6 4 ~ BUZ10 4 â  T-39-11 Fig.3 Typical output characteristics Ij) = f(V oS , . PowerMOS transistor_-_ BUZ10_ N AMER PHILIPS/DISCRETE , _ BUZ10_ _ N AtlER PHILIPS/DISCRETE ObE D â  13^53^31 D0143flb f â
Siemens
Original
BUZ 14 buz 10

MC 151 transistor

Abstract: GR-05155 BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 s s s s s s s V , Tj Value 80 W -65 to 175 o C 175 o C E 55/150/56 1/7 BUZ10 , 50 ID = 3 A V GS = 10 V Min. BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN , Characteristics 3/7 BUZ10 Transfer Characteristics Transconductance Static Drain-Source On , Variation 4/7 BUZ10 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance
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OCR Scan
GR-05155 MC 151 transistor

C67078-S1329-A2

Abstract: BUZ10 ® N - CHANNEL 50V - 0.06 - 23A TO-220 STripFETTM MOSFET TYPE s s s s s R DS(on) ID 50 V BUZ10 V DSS < 0.07 23 A TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED , in this datasheet. February 2000 1/8 BUZ10 THERMAL DATA R thj-case R thj-amb Thermal , BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE Symbol Parameter Test , Thermal Impedance let o bs O 3/8 BUZ10 Output Characteristics Transfer Characteristics
Siemens
Original
C67078-S1329-A2

C67078-S1300-A7

Abstract: *57 TYPE BUZ10 SGS-THOMSON !L iO T ® iQ (£ I B U Z 1 0 N - CHANNEL ENHANCEMENT MODE POWER , Novem ber 1996 1/7 BUZ10 THERMAL R lh j - c a s e R lh j -a m b DATA T h e rm a l T h e , SGS-THOMSON *T# RKHsiiiLiieiragrcioes BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN , SGS-THOMSON 3/7 BUZ10 Transfer Characteristics T ransconductance Static Drain-Source On , Variation 4/7 / I T SGS-THOMSON *T# RKHsiiiLiieiragrcioes BUZ10 Normalized Gate Threshold
Siemens
Original
Abstract: BUZ10 ® N - CHANNEL 50V - 0.06 - 23A -TO-220 STripFETTM POWER MOSFET T YPE s s s s s V DSS R DS(on) ID 50 V BUZ10 < 0.07 23 A TYPICAL RDS(on) = 0.06 AVALANCHE , characterized in this datasheet. September 1998 1/6 BUZ10 THERMAL DATA R thj -case R thj -amb , 45 48 10 Max. Unit ns ns ns ns BUZ10 ELECTRICAL CHARACTERISTICS (continued) SOURCE , duration = 300 µs, duty cycle 1.5 % 3/6 BUZ10 Fig. 1: Unclamped Inductive Load Test Circuit Fig -
OCR Scan
SIL02110

transistor buz 10

Abstract: S G S -T H O M S O N 1 H D BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 V dss R D S (o n ) 0.0 8 n Id 50 V 20 A . AVALANC HE RUG G EDN ESS TEC HNO LO G Y , to 175 175 E 55/1 50 /5 6 U n it V V V A A W °C °c April 1992 1/5 59 BUZ10 , SCS-THOMSON * 7 1 MGBSiQJSmrBia®«# BUZ10 ELECTRICAL CHAR A C TERISTICS (continued) SOURCE DRAIN DIODE , 3/5 61 BUZ10 Transfer Characteristics Transconductance Static Drain-Source On
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OCR Scan
Showing first 20 results.