500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BUV46SM1 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 191 Best Price : - Price Each : -
Part : BUV46 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 850 Best Price : - Price Each : -
Part : BUV46 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 30 Best Price : - Price Each : -
Part : BUV46C Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 140 Best Price : $1.3068 Price Each : $2.80
Shipping cost not included. Currency conversions are estimated. 

BUV46A Datasheet

Part Manufacturer Description PDF Type
BUV46A Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original
BUV46A STMicroelectronics HIGH VOLTAGE NPN SILICON POWER TRANSISTORS Original
BUV46A AnalogicTech POWER TRANSISTORS Scan
BUV46A Mospec Switchmode Series NPN Power Transistor Scan
BUV46A Mospec POWER TRANSISTORS(6A,400-450V,70W) Scan
BUV46A N/A Semiconductor Master Cross Reference Guide Scan
BUV46A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUV46A STMicroelectronics High Voltage NPN Silicon Power Transistors Scan
BUV46A STMicroelectronics Shortform Data Book 1988 Scan
BUV46A Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BUV46AFI N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUV46AFI STMicroelectronics Shortform Data Book 1988 Scan

BUV46A

Catalog Datasheet MFG & Type PDF Document Tags

BUV46

Abstract: buv46a SavantIC Semiconductor Product Specification BUV46 BUV46A Silicon NPN Power Transistors , BUV46A BUV46 VALUE 850 UNIT V 1000 Open base BUV46A 400 V 450 Open collector , SavantIC Semiconductor Product Specification BUV46 BUV46A Silicon NPN Power Transistors , . MAX UNIT 400 IC=0.1A ;IB=0 V 450 BUV46A BUV46 IC=2.5A ;IB=0.5A BUV46A IC , BUV46A V IC=2.5A; IB=0.5A BUV46A IC=2A; IB=0.4A ICER Collector cut-off current VCE
-
Original
npn 2a fast switching buv46buv46a

BUV46 transistor

Abstract: BUV46A f Z Z S G S -IH O M SO N Ra0©^®mUiOT®08D©i BUV46/FI BUV46A HIGH VOLTAGE NPN SILICON POWER , BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The BUV46A and BUV46FI are silicon multiepitaxial mesa NPN , BUV46FI 850 850 400 7 BUV46A 1000 1000 450 5 3 Unit V V Collector-Emitter Voltage (V be = 0 , for BUV46/FI for BUV46A Is - 0.5 A Ib - 0.7 A la > 0.4 A Ib = 0.6 A Ib = 0.5 A Ib = 0.4 A , Tc = 125 °C V be = 7 V lc = 100 mA for BUV46/FI lc = 2 .5 A lc = 3 .5 A for BUV46A lc = 2 A lc = 3
-
OCR Scan
BUV46 transistor ISOWATT220 E81734 T0-220 UV46/FI-BU 1SOWATT220
Abstract: BUV46 BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS â  STMicroelectronics PREFERRED SALESTYPES . NPN TRANSISTORS . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION , alue U nit BUV46 BUV46A VcES C o lle c to r-E m itte r V o lta g e ( V b e = 0) 850 , -6 5 to 150 °c °c 150 1/4 BUV46 / BUV46A THERMAL DATA Rthj-c T h e rm a l R e , 0.8 |IS Vcc Vcc = 150 V |IS |IS |IS |IS BUV46 / BUV46A TO-220 MECHANICAL -
OCR Scan

BUV46

Abstract: BUV46A Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV46 BUV46A , maximum ratings (Tc=25) SYMBOL PARAMETER BUV46 VCBO Open emitter BUV46A VCEO VEBO , OND CONDITIONS VALUE 850 V 1000 400 Open base BUV46A Emitter-base voltage Open , Specification Silicon NPN Power Transistors BUV46 BUV46A CHARACTERISTICS Tj=25 unless otherwise , INC Turn-on time ts Fall time For BUV46 IC=2.5A;IB1=-IB2=0.5A;VCC=150V For BUV46A IC
-
Original

BUV46

Abstract: ISOWATT-220 .,â'žâ'ž, ISOWATT220 BUV46 BUV46FI BUV46A BUV46AFI Unit VcES Collector-emitter Voltage (VBe = 0 , BUV46/FI BUV46A/AFI HIGH VOLTAGE POWER SWITCH iESCRIPTION he BUV46/A and BUV46FI/AFI are silicon , ) VcEOfsus)* Collector-emitter !0= 100mA for BUV46/FI 400 V Sustaining Voltage for BUV46A/AFI 450 V VcE , lB = 0.7A 5 V for BUV46A/AFI lc=2A le = 0.4A 1.5 V lc=3A Ib = O.SA 5 V VBE(sa¡}* Base-emitter for BUV46/FI Saturation Voltage le = 2.5A la = 0.5A 1.3 V for BUV46A/AF1 lc = 2A 1
-
OCR Scan
ISOWATT-220 BUV46A/AFI WATT220 BUV46/F1-BUV46A/AFI 125-C BUV46A/AF1

BUV46

Abstract: BUV46A BUV46 BUV46A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s , Symbol Parameter Value BUV46 Unit BUV46A V CES Collector-Emitter Voltage (V BE = 0 , -65 to 150 o C 150 o C 1/4 BUV46 / BUV46A THERMAL DATA R thj-case Thermal , Saturation Voltage I C = 100 mA for BUV46 I C = 2.5 A I C = 3.5 A for BUV46A IC = 2 A IC = 3 A for BUV46 for BUV46A 400 450 V V I B = 0.5 A I B = 0.7 A 1.5 5 V V I B = 0.4 A
STMicroelectronics
Original
cex 06 P011C

transistor t220

Abstract: BUV46 BUV46/FI BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s s SGS-THOMSON , FLUORESCENT LIGHTING 1 2 3 3 1 TO-220 DESCRIPTION The BUV46A and BUV46FI are silicon , Collector-Emitter Voltage (V BE = 0) BUV46 BUV46FI BUV46A Uni t 850 1000 V V CEX , C = 100 mA for BUV46/F I I C = 2.5 A I C = 3.5 A for BUV46A IC = 2 A IC = 3 A for BUV46/F I I C = 2.5 A for BUV46A IC = 2 A o for BUV46/FI for BUV46A Typ . 400 450 V V I
STMicroelectronics
Original
transistor t220 O-220 BUV46/FI-BUV46A P011G

BUV46

Abstract: BUV46A BUV46 BUV46A ® HIGH VOLTAGE NPN SILICON POWER TRANSISTORS s s s s s , Symbol Parameter Value Uni t BUV46 BUV46A V CES Collector-Emitter Voltage (VBE = 0 , W -65 to 150 o C 150 o C 1/4 BUV46 / BUV46A THERMAL DATA R t hj-ca se , Saturation Voltage I C = 100 mA for BUV46 I C = 2.5 A I C = 3.5 A for BUV46A IC = 2 A IC = 3 A o for BUV46 for BUV46A 400 450 V V I B = 0.5 A I B = 0.7 A 1.5 5 V V I B = 0.4 A
STMicroelectronics
Original

BUV46B

Abstract: BUV46 450 V (Min) BUV46A * Collector-Emitter Saturation Voltage - vCE(sat)=1 5 v (Max) 6 lc = 2.5 A / 2 , BUV46A 6 AMPERE POWER TRANASISTORS 400-450 VOLTS 70 WATTS Characteristic Symbol BUV46 BUV46A Unit , Voltage (lc= 0.2 A,Ib= 0, L=25 mH ) BUV46 BUV46A ^CEO(sus) 400 450 V Collector Cutoff Current (VCE= 850 V, Rbe =S 10 ohm ) BUV46 (VCE= 1000 V, Rbe =S 10 ohm ) BUV46A 'cER 300 300 uA Collector Cutoff Current (VCE= 850 V, VBE=-2.5 V) BUV46 (VCE= 1000 V, VBE=-2.5 V) BUV46A 'cE* 100 100 uA Emitter Cutoff
-
OCR Scan
BUV46B 07 le 90 vce 850

BUV46FI

Abstract: E81734 ¿t7 SGS-THOMSON BUV46FI BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS . SGS-THOMSON , LIGHTING DESCRIPTION The BUV46A and BUV46FI are silicon multiepitaxial mesa NPN transistors in the Jedec , MAXIMUM RATINGS Symbol Parameter T0-220 ISOWATT220 BUV46 BUV46FI BUV46A Unit VcES Collector-Emitter , )* Collector-Emitter lc = 100 mA for BUV46/FI 400 V Sustaining Voltage for BUV46A 450 V VcE(sat , V for BUV46A lc = 2 A lB = 0.4 A 1.5 V lc = 3 A lB = 0.6 A 5 V VÃE(sat
-
OCR Scan
NPN Transistor isolated T0-220 ISOWATT22Q

BUV46A

Abstract: Product Specification www.jmnic.com BUV46A Silicon Power Transistors DESCRIPTION With TO-220C package High voltage Fast switching APPLICATIONS General purpose switching Switch mode power supplies Electronic ballasts for fluorescent lighting PINNING PIN DESCRIPTION 1 , BUV46A Silicon Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , BUV46A Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance
JMnic
Original
Abstract: BUV46A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 850V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 6A All Semelab hermetically sealed products can Semelab
Original

buv46afi

Abstract: f Z 7 S G S -T H O M S O N " 7 # ^D æ sm iO TM tgS BUV46/FI BUV46A/AFI HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The BUV46/A and BUV46FI/AFI are silicon multiepitaxial mesa NPN transistors in the jedec T0-220 plastic package and ISOWATT220 fully isolated package respectively, intended for high , t Base C urre n t T 0-220 IS O W A TT220 BUV46 BUV46FI 850 850 400 7 5 3 T O -220 BUV46A BUV46AFI 1000 1000 450 Unit V V V V A A < m o V ebo lc Ib O IS O WA TT2 20 30 W °C °C
-
OCR Scan
BUV46/FI-BUV46A/AFI

BUV46A

Abstract: BUV46A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 850V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 6A 7.92 (0.312) 12.70 (0.50) All Semelab
Semelab
Original
UV46A

BUV26

Abstract: but100 BUV26 BUV27 BUV28 BUV46 BUV46A BUV46FI BUV48 BUV48A BUV48AFI BUV48B BUV48C BUV48CFI BUV48FI
-
OCR Scan
but100 BUL310PI BUL381 BUL381D BUL382 BUL382D BUL416
Abstract: BUV46A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 850V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 6A All Semelab hermetically sealed products can Semelab
Original
Abstract: un 7^5^237 0020741 2 â  SGS-THOMSON [»[H ](»gC T(g«S 13 BUV46/FI BUV46A/AFI S G S-TH0MS0N 3QE ] > HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUV46/A and BUV46FI/AFI are silicon multiepitaxial mesa NPN transistors in the jedecTO-220 plastic package and ISOWATT22C) fully isolated package respectively, intended for high voltage, fast switching applications. INTERNAL SCHEMATIC DIAGRAM ,c B O - NPN ^ O E S - ba y/ ABSOLUTE MAXIMUM RATINGS S ym b o l P a -
OCR Scan
V46FI V46/FI-B 0D2A742

BUT13P

Abstract: BUS50 5min /2.5 85 BUV46A NPN T03 850 6 5min /2.5 85 BUV46AP NPN T0220 450 6 85 BUV47 NPN S0T93
-
OCR Scan
BUS13 BUS13A BUS14A BUS50 BUS51 BUS52 BUT13P SOT93 BUV62 BLN20 BUT14 GG004S4

BUS11-JQR-B

Abstract: BUV19 PRODUCT BUV46 BUV46A Polarity NPN NPN Package TO3 TO3 VCEO 850V 850V IC(cont) 6A 6A HFE(min) 5 5 HFE(max
Semelab
Original
BUS11-JQR-B BUV19 400V 5A NPN 100W BUS12 BUS12A BUS12ACECC BUS12A-JQR-B BUS12CECC BUS12-JQR-B

bu2527af

Abstract: wk16412 'BUV41 ·BUV42 ·BUV42A ·BUV46 'BUV46 ·BUV46A 'BUV46A ·BUV47 'BUV47 ·BUV47A 'BUV47A ·BUV48 'BUV48 ·BUV48A
-
Original
VQE14 VQE24 bu2527af wk16412 WK16413 WK16414 Tesla katalog GT322 GT322A GT328A GT328B GT346A GT346B

BUT136

Abstract: TBT 136 BUV46A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 850V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 6A 7.92 (0.312) 12.70 (0.50) All Semelab
-
OCR Scan
BUT136 TBT 136

BUT136

Abstract: BUV 48A BUV26 BUV27 BUV28 BUV46 BUV46A BUV46FI BUV48 BUV48A BUV48AFI BUV48B BUV48C BUV48CFI BUV48FI
-
OCR Scan
BUV 48A
Showing first 20 results.