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Part : BUT12A Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 1,091 Best Price : $1.27 Price Each : $1.27
Part : BUT12A Supplier : Fairchild Semiconductor Manufacturer : ComSIT Stock : 210 Best Price : - Price Each : -
Part : BUT12A Supplier : Philips Semiconductors Manufacturer : Chip One Exchange Stock : 99 Best Price : - Price Each : -
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BUT12A Datasheet

Part Manufacturer Description PDF Type
BUT12A Fairchild Semiconductor NPN Silicon Transistor Original
BUT12A Philips Semiconductors Silicon diffused power transistors Original
BUT12A Various Russian Datasheets Transistor Original
BUT12A Wing Shing Computer Components SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) Original
BUT12A Fairchild Semiconductor NPN SILICON TRANSISTOR Scan
BUT12A N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BUT12A N/A Cross Reference Datasheet Scan
BUT12A N/A Cross Reference Datasheet Scan
BUT12A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUT12A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUT12A Philips Semiconductors Silicon diffused power transistors Scan
BUT12A Philips Semiconductors Silicon diffused power Transistors Scan
BUT12AF Philips Semiconductors Silicon diffused power transistors Original
BUT12AF Philips Semiconductors Silicon Diffused Power Transistor Original
BUT12AF Various Russian Datasheets Transistor Original
BUT12AF Wing Shing Computer Components SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) Original
BUT12AF N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUT12AF N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUT12AFI N/A Shortform Data and Cross References (Misc Datasheets) Scan
BUT12AI NXP Semiconductors Understanding PFC - Lighting applications; Bipolar power diodes and transistors for electronic ballast Original
Showing first 20 results.

BUT12A

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR but12

Abstract: Converters · Inverters · Switching regulators · Motor control systems. BUT12; BUT12A F o i MBB008 3 , BUT12A VcEO collector-emitter voltage BUT12 BUT12A VcEsat icsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A lc ¡CM Plot tf collector current (DC) collector current (peak , 134). SYMBOL V CESM PARAMETER coliector-emitter peak voltage BUT12 BUT12A coliector-emitter voltage BUT12 BUT12A collector saturation current BUT12 BUT12A collector current (DC) collector current
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TRANSISTOR but12 MBK106

BUT12A

Abstract: collector; connected to mounting base emitter BUT12; BUT12A QUICK REFERENCE DATA SYMBOL VcESM BUT12 BUT12A VCEO collector-emitter voltage BUT12 BUT12A VcEsat Icsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A ·c ICM Plot tf collector current (DC) collector current (peak , PARAMETER < w m 1 ! BUT 12; BUT12A CONDITIONS o MIN. MAX. UNIT collector-emitter peak voltage BUT12 BUT12A collector-emitter voltage BUT12 BUT12A collector saturation current BUT12 BUT12A
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T0-220AB MBC096

BUT12

Abstract: BUT12A DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , peak voltage MAX. UNIT VBE = 0 BUT12 V 1000 V BUT12 400 V BUT12A 450 V 1.5 V BUT12 6 A BUT12A VCEO 850 BUT12A 5 A 8 A , diffused power transistors BUT12; BUT12A LIMITING VALUES In accordance with the Absolute Maximum
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Original
BUT12F MGE246 MGE238

BUT12A

Abstract: BUT12 DISCRETE SEMICONDUCTORS QMTÃ" S^EET BUT12; BUT12A Silicon diffused power transistors Product , specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed , BUT12A 1000 V VcEO collector-emitter voltage open base BUT12 400 V BUT12A 450 V VcEsat collector-emitter saturation voltage see Fig.8 1.5 V Icsat collector saturation current BUT12 6 A BUT12A 5 A , Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A LIMITING VALUES In
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OCR Scan

BUT12

Abstract: BUT12A DISCRETE SEMICONDUCTORS QMTÃ" S^EET BUT12; BUT12A Silicon diffused power transistors Product , power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power , PARAMETER CONDITIONS MAX. UNIT VcESM collector-emitter peak voltage VBE = 0 BUT12 850 V BUT12A 1000 V VcEO collector-emitter voltage open base BUT12 400 V BUT12A 450 V VcEsat collector-emitter saturation voltage see Fig.8 1.5 V Icsat collector saturation current BUT12 6 A BUT12A 5
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BUT12

Abstract: BUT12A N AUER PHILIPS/DISCRETE b^E ]> â  bbsa^i 0020410 TÃ3 BUT12 BUT12A SILICON DIFFUSED POWER , max. max. max. max. max. max. max. max. BUT12 BUT12A 850 1000 400 450 1.5 1.5 6.0 5.0 8 20 , Its Respective Manufacturer N AMER PHILIPS/DISCRETE BUT12 BUT12A b^E J> bbSBTBl Dosami ^T IAPX , . Emitter cut-off current veb = 9v;ic = 0 "ebo max. BUT12 BUT12A 850 1000 400 450 6.0 5.0 8 20 4.0 6.0 ,   bb53
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T0220AB BUT12A/B T0220 MSA060 S3T31

BUT12A

Abstract: BUT12 SavantIC Semiconductor Product Specification BUT12 BUT12A Silicon NPN Power Transistors , CONDITIONS BUT12 BUT12A BUT12 BUT12A Open emitter Open base Open collector VALUE 850 1000 , BUT12 BUT12A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , . MAX 400 V IC=0.1A; IB=0, L=25mH 450 BUT12A BUT12 UNIT IC=6A; IB=1.2A 1.5 1.5 BUT12A IC=6A; IB=1.2A BUT12A V IC=5A; IB=1A BUT12 V IC=5A; IB=1A ICES
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Original

BUT12

Abstract: BUT12AF equivalent DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , peak voltage MAX. UNIT VBE = 0 BUT12 V 1000 V BUT12 400 V BUT12A 450 V 1.5 V BUT12 6 A BUT12A VCEO 850 BUT12A 5 A 8 A , diffused power transistors BUT12; BUT12A LIMITING VALUES In accordance with the Absolute Maximum
Philips Semiconductors
Original
BUT12AF equivalent SCA55

BUT12

Abstract: BUT12AF DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , peak voltage MAX. UNIT VBE = 0 BUT12 V BUT12A 1000 V BUT12 400 V BUT12A 450 V 1.5 V BUT12 6 A BUT12A VCEO 850 5 A collector-emitter , diffused power transistors BUT12; BUT12A LIMITING VALUES In accordance with the Absolute Maximum
Philips Semiconductors
Original
Abstract: N AUER PHILIPS/DISCRETE bbS3T3i o o E a m a b*1E J > td3 BUT12 BUT12A SILICON , . QUICK REFERENCE D ATA BUT12 BUT12A Collector-emitter voltage peak value; V g g = 0 open base , M A P X BUT12 BUT12A RATINGS Lim iting values in accordance w ith the Absolute Maximum System (IEC 134) BUT12A BUT12 Collector-emitter voltage VCESM VCEO max. max. Collector current ,   Silicon diffused power transistors b b 5 3 ^ 3 L QQBfiH2Q bbl « A P X B U T12 BUT12A ) BUT12 -
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SAQ60-1

BUT12

Abstract: 125OC Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A , . Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A RATINGS , = 0 ic , specification Silicon diffused power transistors BUT12; BUT12A Saturation voltages lc = 6A; lB = 1.2 A lc= 5 , . tf typ. tf max. BUT12 BUT12A 1.5 - V 1.5 - V - 1.5 V - 1.5 V 10 18 35 10 20 35 400 1.0
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125OC 8UT12A MSA06 0G777D2 7Z82939 7Z21446 7110A5

but12 transistor

Abstract: BUT12/12A HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage BUT12 BUT12A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation ( Tc=25'C) Junction Temperature Storage Temperature V ceo NPN SILICON TRANSISTOR Symbol BUT12 BUT12A VcES Rating 850 1000 400 450 8 20 4 100 150 -65 ~ 175 Unit V V V V A A A W t t le lc la Pc Tj T stg ELECTRICAL CHARACTERISTICS (Tc =25 c
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but12 transistor

BUT12A

Abstract: PC100-W BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Col lector Base Voltage : BUT12 Vces 850 V : BUT12A 1000 V Collector Emitter Voltage : BUT12 VcEO 400 V : BUT12A 450 V Collector Current (DC) lc 8 A Collector Current (Pulse) lc 20 A Base Current Ib 4 A Collector Dissipation (Tc=25°C) Pc 100 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65 ~ 175 °C ELECTRICAL CHARACTERISTICS (Tc =25°C
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PC100-W

BUT12

Abstract: BUT12A BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value Units : BUT12 : BUT12A VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT12 : BUT12A 400 450 V V Collector-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC
Fairchild Semiconductor
Original

BUT12

Abstract: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage : BUT12 : BUT12A VCEO Collector-Emitter Voltage : BUT12 : BUT12A Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 850 1000 400 450 8 20 4 100 150 - 65 ~ 175 V V V V A A A W °C °C Parameter Value Units
Fairchild Semiconductor
Original
54TYP

BUT12

Abstract: BUT12A BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value Units : BUT12 : BUT12A VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT12 : BUT12A 400 450 V V Collector-Base Voltage IC Collector Current (DC) ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC
Fairchild Semiconductor
Original

LT049

Abstract: LT042 80 . . . 85 90 95 BUT12A(A) BUT12A(A) 2N6581 2N6584 2N6587 2N6590 BUW26 TIPL765A 2N6752 SDT13204
Solid State Devices
Original
SK3111 SDT13305 BUT56 BUT56A LT041 LT042 LT049 sgsf465 ET403 NPN 2N6562 SML13304 SDT13304 2N6560 ET403

BUT11AX

Abstract: TO-220AB BUT11AF BUT11AX BUW11AF BUT11A BUW11A BUT18A BUT12AF BUT12A BUW13AF BUW13A BU505DF BU505F BU505 BU505D
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BU2506DF BU2506DX TO-220AB 220ab sot199 bu508df BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F
Abstract: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Rating Unit 850 1000 V V 400 450 8 20 4 100 175 -6 5 ~ 1 7 5 V V A A A W °C "C Symbol VcES VcEO lc -
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BU25150X

Abstract: BU2508-AX BUT12A BUT12AF BUT 12AI BUT12F BUT12XI BUT18 BUT18A BUT18AF BUT18F BUT211 BUT211X BUW11F BUW11AF BUW11AW
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BU1507AX BU1508AX BU1508DX BU25150X BU2532AW BU2708AF BU2508-AX BU2725DX BUS08D BU2708AX BU2708DX BU506 BU506D BU506DF BU506F BU508AF BU508AW
Abstract: BUX84/85 BUT211 BUT18A BUT12A BUW12A 35W 35W 90W 110W 140W 140W BUX87P BUX85 BUT11A BUT18A BUT12A BUW12A 13W 55W 140W 170W 230W 230W BUW84/85 BUX84/85 BUT211 BUT18A BUT12A BUW12A 25W 25W 70W 80W 110W 110W BUW84/85 BUX84/85 BUT211 BUT18A BUT12A BUW12A 15W 15W 40W 55W 70W 70W 230V BUX87P BUW85 BUX85 BUT11A BUT18A BUT12A BUW12A 15W 70W , BUT11A BUT18A BUT12A BUW12A 13W 55W 55W 140W 160W 220W 220W BUW84/85 BUX84/85 BUT211 -
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current fed push pull topology

Abstract: "CHAPTER 1 Introduction to Power Semiconductors" BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Col lector Base Voltage : BUT12 Vces 850 V : BUT12A 1000 V Collector Emitter Voltage : BUT12 VcEO 400 V : BUT12A 450 V Collector Current (DC) lc 8 A Collector Current (Pulse) lc 20 A Base Current Ib 4 A Collector Dissipation (Tc=25°C) Pc 100 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65 ~ 175 °C ELECTRICAL CHARACTERISTICS (Tc =25°C
Philips Semiconductors
Original
current fed push pull topology Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" 40w ELECTRONIC choke BALLAST DIAGRAM 50/60H
Showing first 20 results.