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EVK011A0B641Z GE Critical Power EVK011A0B Series (Eighth-Brick) DC-DC Converter Power Module, 36–60Vdc Input; 12.0Vdc Output; 11A Output Current visit GE Critical Power
EVK011A0B41Z GE Critical Power EVK011A0B Series (Eighth-Brick) DC-DC Converter Power Module, 36–60Vdc Input; 12.0Vdc Output; 11A Output Current visit GE Critical Power
PT6362C Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6936C Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, SMA23, ROHS COMPLIANT, SMD-23 visit Texas Instruments
PT6364N Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6362N Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6936N Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, SMA23, ROHS COMPLIANT, VERTICAL MOUNT PACKAGE-23 visit Texas Instruments
PT6364A Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6361C Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6364C Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6361N Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6362A Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments

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Part : BUT11A Supplier : Philips Semiconductors Manufacturer : Chip One Exchange Stock : 99 Best Price : - Price Each : -
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Part : BUT11AFTU Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 945 Best Price : £0.4850 Price Each : £0.7130
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BUT11/11A

Catalog Datasheet MFG & Type PDF Document Tags

BUT11

Abstract: 250VLC BUT11/11A HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : BUT11 : B U T 11A Collector Emitter Voltage : BUT11 : B U T 11A , Emitter Saturation Voltage Turn O n Time Storage Time Fall Time BUT11 BUT11A BUT11 BU T11A BUT11 B U T 11A BUT11 BUT11A Sym bol V c e o (s u s Test Condition ) Min 400 450 Typ M ax Unit V V mA , 1.3 1.3 1 4 (iS 0.8 i nS fiS 491 ELECTRONICS BUT11/11A NPN SILICON TRANSISTOR
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250VLC NPN Transistor VCEO 1000V BUT11/11A

BUT11A1

Abstract: BUT-11 BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon , , July 2000 BUT11/11A Typical Characteristics 1000 10 IC = 5 IB VCE(sat)[V], SATURATION , O TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B, July 2000 BUT11/11A , Symbol VCBO Value Units : BUT11 : BUT11A VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT11 : BUT11A 400 450 V V Collector-Base Voltage VEBO Emitter-Base
Fairchild Semiconductor
Original
BUT11A1 BUT-11 BUT11A CIRCUIT

BUT-11

Abstract: BUT11A CIRCUIT BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon , BUT11/11A Typical Characteristics 1000 10 IC = 5 IB VCE(sat)[V], SATURATION VOLTAGE hFE , ], CASE TEMPERATURE Figure 6. Power Derating Rev. B1, August 2001 BUT11/11A Package Demensions , Symbol VCBO Parameter Value : BUT11 : BUT11A VCEO Units V Collector-Base Voltage 850 1000 Collector-Emitter Voltage : BUT11 : BUT11A 400 450 V VEBO Emitter-Base Voltage
Fairchild Semiconductor
Original

but11

Abstract: BUT-11 BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO , 400 450 : BUT11A Emitter Cutoff Current Min BUT11/11A NPN SILICON TRANSISTOR , W VCES Collector Base Voltage : BUT11 Collector Emitter Voltage : BUT11A VCEO : BUT11 Emitter Base Voltage : BUT11A ) Collector Dissipation ( T C=25 PC Junction , .Emitter ELECTRICAL CHARACTERISTICS (Tc =25) Characteristic *Collector-Emitter Sustaining Voltage Symbol : BUT11
Samsung Electronics
Original
transistor VCE 1000V to220 BUT11 equivalent transistor VCEO 1000V transistor VCE 1000V BUT11 transistor transistor emitter collector base

BUT11

Abstract: BUT-11 BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2 , , February 2000 BUT11/11A Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 BUT11/11A Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 , VCBO Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A , Sustaining Voltage : BUT11 : BUT11A Collector Cut-off Current : BUT11 : BUT11A IEBO VCE(sat) Emitter Cut-off
Fairchild Semiconductor
Original

BUT-11

Abstract: BUT11 BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit Collector Emitter Voltage BUT11 VcES 850 V BUT11A 1000 V Collector Emitter Voltage BUT11 VcEO 400 V BUT11A 450 V Emitter Base Voltage ,   BUT11/11A NPN SILICON TRANSISTOR DC CURRENT GAIN COLLECTOR EMITTER SATURATION VOLTAGE 0.1 0.2 05 1 2 , Current: 'Collector Emitter Sustaining Voltage: BUT11 BUT11A BUT11 BUT11A Emitter Cutoff Current
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BUT-11

Abstract: BUT11 BUT11/11A HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS NPN SILICON TRANSISTOR 7 0 -2 2 0 , ELECTRONICS BUT11/11A DC CURRENT GAIN NPN SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE , Dissipation ( TC=25T:) Junction T emperature Storage Temperature : BUT11 : BUT11A : BUT11 : BUT11A V ebo lc , Time Fall Time * Pulsed Test: PW = 300uS, duty cycle = 1.5% Symbol BUT11 BUT11A BUT11 BUT11A BUT11 BUT11A BUT11 BUT11A V ceo (sus) Test Conditions lc = 100mA. IB = 0 VCE = 850V, V0E = 0 VCE= 1000V, V
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BUT11

Abstract: BUT-11 BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Symbol Rating Unit VCES 850 1000 400 450 9 5 10 2 4 100 150 -65~150 V V V V V A A A A W °c °c Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current , :BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BUTIIA Turn-On Time Storage Time Fall
Wing Shing Computer Components
Original

BUT-11

Abstract: but11 BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VcES 850 V : BUT11 1000 V Collector Emitter Voltage :BUT11A VcEO 400 V : BUT11 450 V Emitter Base Voltage : BUT11A Vebo 9 V , Min Typ Max Unit *Collector-Emltter Sustaining Voltage : BUT11 Vceo (sus) lc= 100mA, lB= 0 400 V : BUT11A 450 V Collector Cutoff Current : BUT11 Ices VCE= 850V, Vbe = 0 1 mA : BUT11A VCE= 1000V
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PC100-W

d 42030 transistor

Abstract: AN-7505 BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 TO-220 2.Collector 3 , BUT11/11A Typical Characteristics 1000 10 100 VCE(sat)[V], SATURATION VOLTAGE VCE = 5V , Derating Rev. B1, August 2001 BUT11/11A Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 , Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A Emitter-Base Voltage , : BUT11 : BUT11A Collector Cut-off Current : BUT11 : BUT11A IEBO VCE(sat) Emitter Cut-off Current
Fairchild Semiconductor
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FAN6800 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 AN-9019 AN-140 AN-4101 AN-4102 AN-4103 AN-4108
Abstract: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS , : BU T 11 C ollecto r E m itter V oltage : BUT 11A V cE O : BU T 11 Em itter Base V oltage : BUT 11A Base C urrent (Pulse) Ib C ollecto r D issipation (Tc=25°C) Pc Junction Tem , Sustaining V oltage : BU T 11 V ceo (sus) Test C ond itio ns lc = 100mA, lB= 0 : B U T 11A C ollector C utoff C urrent Ices : B U T 11A V CE = 850V, VBE = 0 V CE= 1000V, V BE= 0 V 1 -
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BUT11A CIRCUIT

Abstract: BUT11 BUT11/11A HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BUT11 Collector Emitter Voltage Emitter Base , Dissipation (Tc=25°C) Junction Temperature Storage Temperature : B UT11A : BUT11 : B UT11A V ceo Symbol , Sustaining Voltage : BUT11 : BUT11A Collector Cutoff Current : BUT11A Emitter Cutoff Current Collector Emitter Saturation Voltage : BUT11 : BUT11A Base Emitter Saturation Voltage : BUT11A Turn On Time Storage
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but11a

Abstract: but 11 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VcESM BUT11 BUT11A VcEO collector-emitter voltage BUT11 BUT11A >C BUT 11 ; BUT 11A PARAMETER collector-emitter peak , Semiconductors Product specification Silicon diffused power transistors BUT11; BUT 11A 30 to 60 Hz , collector; connected to mounting base emitter BUT11; BUT11A QUICK REFERENCE DATA SYMBOL VCESM BUT11 VcEO BUT11A collector-emitter voltage BUT11 BUT11A VcEsat lc I CM PARAMETER w (Û
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but 11 transistor but 11a MGB913 MQBG73

BUT11A CIRCUIT

Abstract: but11a collector; connected to mounting base emitter BUT11; BUT11A MBBOOS 3 1 2 3 Fig.1 Simplified , voltage BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A VcEsat ·c cm Ptot tf collector-emitter , (IEC 134). SYMBOL VcESM BUT 11 ; BUT 11A 'I'-'iiiv PARAMETER collector-emitter peak voltage BUT11 BUT11A collector-emitter voltage BUT11 BUT11A collector current (DC) collector current (peak value , otherwise specified. SYMBOL VcEOsust PARAMETER CONDITIONS BUT 11 ;BUT 11A MIN. TYP. MAX. UNIT
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But11a data
Abstract: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J > BUT11 BUT11A , /DISCRETE B U T 11 BU T 11A b 'lE fc.bSS'm QD 2 a 4 DD 673 « A P X ]> RATINGS Lim iting values in accordance w ith the Absolute Maximum System (IEC 134). BUT11A BUT11 Collector-emitter , BUT11 BUT11A Silicon diffused power transistors Fig. 3 Test circu it fo r VQgQsustSwitching times resistive load (Figs 4 and 5) BUT11 *Con = 3 A; lg on = â'"'B o ff = 0,6 A Turn-on time ton ^Con -
OCR Scan
S3T31 MSA080- QD2A403

BUT11

Abstract: BUT11/BUT11APX equivalent SGS-THOMSON R fflD O I^ O lilL iO T r^ O R aD O i BUT11/FI BUT11A/AFI HIGH VOLTAGE SWITCH , Current Collector Peak Current Base Current Base Peak Current T O -2 2 0 850 400 Valu e BUT11 A /A FI , Unit < < E E mA V V o II Ie b o V ceo =0 for BUT11/FI for BUT11A/AFI I b (off) le = 3A for BUT11/FI le = 2.5A for BUT11A/AFI lc = 100mA 400 450 II V c E (s a t) lB = 0.6A 1.5 , ) Base-emitter Saturation Voltage le = 3A for BUT11/FI le = 2.5A for BUT11A/AFI le = 2.5A lB = lB2 = 0.5A
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BUT11/BUT11APX equivalent BUT11/FI 11FI/AFI T0-220 ISOWATT220 WATT220 ISOWATT22Q

BUT11 equivalent

Abstract: transistor t220 715^53^ QQ£flb55 0 â  ' SCS-THOMSON BUT11 Fl itLieiri(Q)10(gi B UT11 A/AFI S G S-THOMSON 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepi-taxial mesa , Parameter Value Unit BUT11/FI BUT11A/AFI VcES Collector-emitter Voltage (Vbe = 0) 850 1000 V VcEO , . Operating Junction Temperature 150 °C December 1988 1/5 379 BUT11/FI-BUT11A/AFI Hi 7^2^37 QQ26b2b 2 â , Collector-emitter Sustaining Voltage Ib (oil) = 0 lc = 100mA for BUT11/FI for BUT11 A/AFI 400 450 V V VcE(sal
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transistor t220 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11/A ISOWATT-220 BUT11/FI-BUT11A/AFI T-33-73 ISO-WATT220

diode 1000V 10a

Abstract: 200v 1.5v 3a diode BUT11 BUT11A BUT11F BUT11AF BUW11 BUW 11A BUT211 BUT18 BUT18A BUT18F BUT18AF Package Outline TO-126 TO
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4045AV diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A DIODE 2A 400V diode 6A 1000v BU407 BUV28 BUV28A BUV27 BUV27A BUV26

BUT11A

Abstract: BUT11 DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A , peak voltage MAX. UNIT VBE = 0 BUT11 V BUT11A 1000 V BUT11 400 V , Product specification Silicon diffused power transistors BUT11; BUT11A LIMITING VALUES In , collector-emitter peak voltage VCESM MIN. MAX. UNIT VBE = 0 - 850 V - 1000 V BUT11
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MGE252 MBB008 MBK106 MGE244 MBH383 MGE238

but11

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A , peak voltage MAX. UNIT VBE = 0 BUT11 V 1000 V BUT11 400 V BUT11A , Product specification Silicon diffused power transistors BUT11; BUT11A LIMITING VALUES In , collector-emitter peak voltage MIN. MAX. UNIT VBE = 0 BUT11 850 V BUT11A - 1000 V
Philips Semiconductors
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SCA55

BUT-11

Abstract: BUT11A SavantIC Semiconductor Product Specification BUT11 BUT11A Silicon NPN Power Transistors , IC CONDITIONS BUT11 BUT11A BUT11 BUT11A Open emitter Open base 850 1000 400 450 , Specification BUT11 BUT11A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise , Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS BUT11 MIN TYP. MAX UNIT 400 IC=0.1A; IB=0, L=25mH BUT11A V 450 BUT11 IC=3A; IB=0.6A BUT11A
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BUT11A Switching regulators

BUT11F1

Abstract: BUT-11 WM SGS-THOMSON B UT11 /Fl IM BUT11A/AFI HIGH VOLTAGE SWITCH »ESCRIPTION he BUT11/A and BUT11FI/AF , DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUT11/FI BUT11A/AFI VcES , Storage Temperature -65 to 150 Ti Max, Operating Junction Temperature 150 December 1988 1/5 379 BUT11 , ) = 0 lc » 100mA for BUT11/F1 for BUT11A/AFI 400 450 V V VcE(sat) Collector-emitter Saturation Voltage le = 3A 1B = 0.6A for BUT11/FI le = 2.5A lB = 0.5A for BUT11 A/AFI 1.5 1.5 V V VBE(sat
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BUT11F1 Equivalent but11 5T35 UT11 SOWATT220 BUT11/FJ-BUT11AMFI BUT11/F1 30WATT220 ISO-VATT220

by205

Abstract: BUT11 BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK q Rugged , BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 electrical characteristics at 25 , storage time ns 1.5 µs 300 ns BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED , INFORMATION 3 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 MAXIMUM SAFE , 1000 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 MECHANICAL DATA TO
Power Innovations
Original
by205 BY205-400 transistor d44h11 2N2222 2N2904 D44H11

but11 transistor application notes

Abstract: BUT11 DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A , peak voltage MAX. UNIT VBE = 0 BUT11 V BUT11A 1000 V BUT11 400 V , Product specification Silicon diffused power transistors BUT11; BUT11A LIMITING VALUES In , collector-emitter peak voltage VCESM MIN. MAX. UNIT VBE = 0 - 850 V - 1000 V BUT11
Philips Semiconductors
Original
but11 transistor application notes

BUT11A1

Abstract: BUT11A Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A , max. Total power dissipation up to Tmb = 25 °C Ptot max. Fall time tf max. BUT11 BUT11A 850 1000 , . Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134). but11 BUT11A , Semiconductors. Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A
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0077B TQ-220AB MSA060 7Z82933

BUT11A

Abstract: BUT11AI N AUER PHILIPS/DISCRETE bTE T> m ^53131 GDSflB^S 221 BUT11 BUT11A IAPX SILICON DIFFUSED , Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BUT11 BUT11A b^E ]> bbSB'm 0020400 Û73 IAPX ratings Limiting values in accordance with the Absolute Maximum System (IEC 134). BUT11 , /DISCRETE b^E J> Silicon diffused power transistors blE D â  bb53T31 002ÃM01 7DT BUT11 BUT11A IAPX , ) 'Con = 3 A; lBon = -lBoff = 0,6 A BUT11 Turn-on time ton max. 1 Turn-off: Storage time tS max. 4
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BUT11AI TQ-220 T0-220AB

BUT11

Abstract: transistor BC 176 e ÏRAHSYS ELECTRONICS LIMITE!» BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused , 1: This value applies for tp < 10 ms, duty cycle < 2%. BUT11 NPN SILICON POWER TRANSISTOR , vary slightly with transistor parameters. BUT11 NPN SILICON POWER TRANSISTOR PARAMETER MEASUREMENT , Waveforms BUT11 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA VCE - Collector-Emitter Voltage - V Figure 3. BUT11 NPN SILICON POWER TRANSISTOR
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transistor BC 176 T0220

BY205

Abstract: BUT11 BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUT11 NPN SILICON POWER , 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUT11 NPN , BUT11 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE , Specifications are subject to change without notice. BUT11 NPN SILICON POWER TRANSISTOR MECHANICAL DATA TO
Bourns
Original
D45H11 SAP791AB

BUT11

Abstract: BUT11 NPN SILICON POWER TRANSISTOR C o p y rig h t© 1997, Power Innovations Limited, UK MAY 1989 - , all parameters. BUT11 NPN SILICON POWER TRANSISTOR M AY 1989 - REVISED MARCH 1997 electrical , BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION , PRODUCT INFORMATION PoW ef INNOVATIONS BUT11 NPN SILICON POWER TRANSISTOR M AY 1989 - REVISED , 4 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 MECHANICAL DATA T0-220 3
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BUT11

Abstract: transistor but11 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO , isc Silicon NPN Power Transistor BUT11 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise
INCHANGE Semiconductor
Original
transistor but11

by205

Abstract: BY205-400 BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current TO-220 PACKAGE (TOP VIEW) B , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUT11 NPN SILICON POWER , 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUT11 NPN , BUT11 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE
Bourns
Original
2n2222 transistor pin b c e diode by205 by205 diode

2n2222 transistor pin b c e

Abstract: 2n2222 h parameter values BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C This series is currently available, but not recommended for , %. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUT11 , Specifications are subject to change without notice. BUT11 NPN SILICON POWER TRANSISTOR PARAMETER , . BUT11 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE
Bourns
Original
2n2222 h parameter values
Abstract: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) 5 A Continuous Collector Current B C 2 E , change without notice. 1 BUT11 NPN SILICON POWER TRANSISTOR electrical characteristics at 25 , 2002 Specifications are subject to change without notice. BUT11 NPN SILICON POWER TRANSISTOR , subject to change without notice. 3 BUT11 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING -
Original
Abstract: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE (TOP VIEW) 5 A Continuous Collector Current B C 2 E , are subject to change without notice. 1 BUT11 NPN SILICON POWER TRANSISTOR electrical , REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUT11 NPN SILICON POWER , notice. 3 BUT11 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM -
Original

but11ax

Abstract: BUT11 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11 AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc , Diffused Power Transistor BUT11 AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 °C unless , Power Transistor BUT11 AX
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but11ax BUT11AX

ksd 250v 10a

Abstract: ksd 202 13004 KSE 13005 5A K S D 73 T1P120 TIP 12 5 KSC 2518 BUT11 KSC 5 03 9 BUT 11A KSC 5 338
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ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167 KSC838/KSC167

BUT11AX

Abstract: TO-220AB BUT11 BUT211 BUW11 BUT18 BUT12F BUW12F BUT12 BUW13F BUW13 BUW14 BUX87P BUX85F BUX85 BUW85 BUT18AF
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OCR Scan
BU2506DF BU2506DX TO-220AB 220ab sot199 bu508df BUX86P BUX84F BUX84 BUW84 BUT211X BUW11AF

BU2508-AX

Abstract: BU506D, BU1506DX, BU2506DF BUJ304AX BUJ403A BUJ403AX BUT11 BUT11A PAGE 579 583 587 591 595 597 599 604 609 611 613 615 617 622 627
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OCR Scan
BU1507AX BU2708AX BU2708DX BU2720AX BU2725DX BU4506AF BU2508-AX BU506D, BU1506DX, BU2506DF BU4508AF BU4508DX BU4506DF BU4508DF BU505 BU505D BU505F BU505DF BU506 BU506D

ESM40

Abstract: BUT21A 600V 300V 0.6V at 2A/0.5A 0.16/iS at 2A MJE13005 700V 400V BUT11 TO-220AB 5A 850V 400V 1.5Vat3A
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OCR Scan
BU826 BU826A BUV90 BUV90F ESM3045AV ESM4045AV ESM40 BUT21A ESM6045DV 10a 1000v to220a bux86 philips semiconductor SOT93 T-32-OI

T1P110

Abstract: BD243B 5 10 700 16 7 7 40 1 2 0.01 5 1 5 0.25 0.4 1.2 1.3 1 2 75 45 12 500 BUT11 ##850 400 9 100 5
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OCR Scan
BD243B BD243C BD949 BD951 BD953 BD955 T1P110

transistor SD335

Abstract: SF126 BUX41 BUX42 BUX48 BUX48A MJE13005 BUT11 BUX85 -
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Original
SU111 SF137 SU161 SU169 SU179 transistor SD335 SF126 SF127 SF128 SD337 sd336 SC116 SC117 SC118 SC119 SC236 SC237

mx 2sb834

Abstract: 2sb834 mx TO-220 PACKAGE MX MICROELECTRONICS Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25 (W) PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO Ic VCBO VCEO * ICEO ICES (mA) (V) *25 *25 *30 *30 *30 *30 *40 *40 *60 1500 150 1500 150 3000 60 3000 60 3000 60 3000 140 5000 60 5000 60 7000 400 *100 5000 850
MX Microelectronics
Original
LB125 mx 2sb834 2sb834 mx 2sa940 2sc2073 tip41c pins REG lm317 MJE13 MX78M05 MX78M12 MX79M05 MX79M12

b0951

Abstract: MJE13007 1.3 1 2 75 45 12 500 but11 ##850 400 9 100 5 1000 850 1.5 1.3 3 BUV46 ## 850 400 7 70 5
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OCR Scan
BUL45 CD3968 CSD1025 MJE13007 MJE3055T b0951 bu508at SJE1349

BUT13P

Abstract: BUS50 â'¢4 à E ì> Ã1331Ã7 GG004S4 044 â  SMLB BI-POLAR TRANSISTORS â SEMELAB LTD REL) & HIGH ENERGY Type Number Rei Code Pol Package Vceo Ic (conti Hfe @ Vce/Ic fT Pd BUS13 CECO NPN T03 400 8 15min 5/2 175 BUS13A CECO NPN T03 400 8 15min 5/2 175 BUS 14 HR NPN T03 400 30 250 BUS14A HK NPN T03 450 30 250 BUS50 HR NPN T03 125 70 20min 4/5 350 BUS51 HR NPN T03 200 50 20min 4/5 350 BUS52 HR NPN T03 250 40 20min 4/5 350 BUT11 NPN T0220 400 5 5min 3/1.5 100 Birri 1A NPN T0220 450
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OCR Scan
BUT13 BUT13P BUT14 BIJT35 BUV24 BUV41 BUV62 BLN20 BUV46ap BUT34 BUT70

BUS11A PHILIPS SEMICONDUCTOR

Abstract: 4A 600V 700V 300V 400V 0.6V at 2A /0.5A 0 .1 6 p s a t2 A BUT11 BUT11A TO -220AB
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OCR Scan
BUS11A PHILIPS SEMICONDUCTOR 3045DV 4045DV 5045DV ESM6045AV 6045DV

Transistoren DDR

Abstract: vergleichsliste für Schaltnetzteile und Motorsteuerung SU 380 BUT11 Si-npn-Leistungsschalttransistor Hinweise â'¢ Die
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OCR Scan
Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 SCE237 SCE238 SCE239 SCE308 BSY51 BSY53

diode 400V 4A

Abstract: DIODE 3A 1000V MJE13004 MJE13005 TO-220AB 4A 600V 700V 300V 400V 0.6V at 2A/0.5A 0.16/iSat 2A BUT11 BUT11A TO-220AB 5A
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OCR Scan
ESM3045DV ESM5045DV BUX86 diode 400V 4A DIODE 3A 1000V Diode 400V 5A 1000v 3a diode ESM4045DV BUX87 TIP47

b0951

Abstract: bu508at 5 0.25 0.4 1.2 1.3 1 2 75 45 12 500 BUT11 ##850 400 9 100 5 1000 850 1.5 1.3 3 BUV46
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OCR Scan
b0949 TIP110 TIP111 JIP112

JE3055T

Abstract: je13007 80 65 125 75 45 10 10 7.5 7 12 500 500 100 100 500 9 100 BUT11 BUV46 # # 850 ##850
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OCR Scan
JE3055T je13007 JE13007 S1000 TIP112

2sb834 mx

Abstract: mx 2sb834 MX-MICROELECTRONICS TO-220 PACKAGE Applied widely for: · · · · TV,Av,power amplifiers power drive e.c.t. ac energy saving lights power amplifiers power switch and speedy circuits DC regulators of electronical devices and calcukators · Applied widely for TV,Av,power amplifiers power drive e.c.t. ac ICBO Pd *Tc= Ic VCBO VCEO *ICEO OR 25 (mA) (V) (V) ICES PNP (W) (A) NPN TYPE 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A · *25
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Original
IC LM317 CIRCUITS 2sd880 equivalent npn 400 v 1.5 a tip41 file type IC LM317 igo tv LB123 MJE13003 TIP32C TIP41 TIP42 TIP122

KSC5027

Abstract: power BJT BUT11 400 850 9 5 100 - - - - 1.5 4 0.8 KSC5039 400 800
Fairchild Semiconductor
Original
KSC2752 KSC5026M KSA1156 KSE13006 KSE13008 KSC2333 KSC5027 power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent

BUT11A1

Abstract: Power Bipolar Transistors 8 8 6 5 1 1 2 3 3 4 6 10 - BUX84 BUJ202A BUJ204A BUT211 BUT11 BUJ205A BUT12F BUW13F BUJ301A
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OCR Scan
BU1508AX Power Bipolar Transistors BU2532 BU2527 BU4506AX BU4506AZ BU4507AF S0T82 S0T78 T0220AB S0T186A S0T186 BU1506DX

BUT11APX equivalent

Abstract: BUT11A1 850 5 3 0.8 BUT11 850 6 4 0.2 BUJ205A 850 8 6 0.8 850 15
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Original
BU1508DX BU2527DX BUT11APX BUT11APX equivalent equivalent BU2725DX BU2506DF equivalent BU4522AX bu2520dx BU506F BU506DF BU2507AF BU1507DX BU2507DF BU2507AX

r3673

Abstract: Y1031 BF65-S BF66 BF66-S BF67 BF67-S BU406 BU406-S BU446 BU446-S BUT11 BUT11-S BUT12 BUT12-S
Bourns
Original
TIP43 Y1031 r3673 TIC106D Thyristor r3673 Philippines R3672 BLBF39 MP150SG KTMC-1030NAP E106817 TIP122-S TIP125

r3673

Abstract: Y1031 BU446 BU446-S BUT11 BUT11-S BUT12 BUT12-S BUX84 BUX84-S BUX85 BUX85-S IDM1J IDM1J-S R3224T
Bourns
Original
mp150s TIC226D Philippines transistor bf64 bd657 R3673-S transistor bf65 TIP125-S TIP126 TIP126-S TIP127 TIP127-S TIP130

SOT399

Abstract: BU2720DX BUX84 BUW84 BUT211X BUT11F BUW11F BUT211 BUT11 BUW11W BUT18F BUT18 BUT12F BUW12F BUT12 BUW12W BUW13F
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OCR Scan
BU2720DX SOT399 BU2515DX BUW13W BUT11XI BUW11AW BUT12AF BUT12XI BUW12AF

KSC1330

Abstract: KSC945 TIP121 TIP126 KSC2518 BUT11 KSC5039 BUT11A KSC5021 KSC5338 KSC5061 KSC5321 5 T IP il BDW23
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OCR Scan
KSC838 EDX53 BD53A KSE13009F KSC1330 KSC945 KSA733 KSE 13007 L BD139 KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 KSC1675/KSC945

PEC730

Abstract: but46a 125 125 125 125 12~ ~b~g~4 15 2SC251SM 2SC2535 2SC2535 2SC3570 STI401 STI413 IR413 BU129 BUT11
Short Form Catalog
Original
PEC730 but46a 2N5241 OTS431 STA9364 STS430 SPT3439 2SC2518L

TIC106D equivalent

Abstract: TIC106M SCR BDX54A BDX54B BDX54C BU406 BU407 BU426 BU426A BU911 BUH51 BUL146 BUL381 BUL770 BUL791 BUT11 , BU426A TIP152 BUL791 BUL791 TIPL760A BUL770 BUL791 BUT11 BUL770 BUV47 BUV47A BUV48 BUV48A
Bourns
Original
TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIP30C BD240C TIPP32C BD242B BD242C TIP32B

JE350

Abstract: je180 BUR21 BUR22 BUR23 BUR24 BUR50 BU R 5 0 S BUR51 BUR52 BU S12 BUS13 BU S13A BUT11 BUT11A BUT13 BUT13P , BUR23 BUR24 BUR50 BUR50S BUR51 BUR52 BUW 35 BUX48 BUW 46 BUT11 BUT11A BUT13 BUT13P BUT921T BUT931RP , BUV61 BUV62 BUV62A BUW11 BUW 11A BUW 12 BUW 12A BUW 13 BUW 13A BUW 22 BUW 22A BU W 2 2A P BU W 2 2 P BÜW , BUV51 BUV52 BUV56 BUV60 BUV61 BUV62 BUV62A BUW11 BUW 11A BUW 12 BUW 12A BUW 13 BUW 13A BU W 2 2 P BU W 2
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OCR Scan
BD325 JE182 JE350 je180 MJ13004 TP33C JE172 BD135 BD136 BD137 BD138 BD140 BD142

TIC106M SCR

Abstract: TIC106D equivalent BDX54A BDX54B BDX54C BU406 BU407 BU426 BU426A BU911 BUH51 BUL146 BUL381 BUL770 BUL791 BUT11 , BU426A TIP152 BUL791 BUL791 TIPL760A BUL770 BUL791 BUT11 BUL770 BUV47 BUV47A BUV48 BUV48A
Bourns
Original
TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 BTB06-600 TIP36C EQUIVALENT TIC126D equivalent BD540C BD244B BD244C TIP42B TIP42C BD544C

"CHAPTER 1 Introduction to Power Semiconductors"

Abstract: schematic diagram on line UPS 10kva Device BU406 BU407 BU408 BU508AF BU806 BU807 BUT11 BUT12 11.KSH Series Device KSH29 KSH30 KSH31 KSH32
Philips Semiconductors
Original
schematic diagram on line UPS 10kva sith thyristor Power Semiconductor Applications Philips Semiconductors

KSD 166

Abstract: KSD 168 ; I^O^A^IOO °C - 1.2 1.5 US ts storage time, BUT11 AF Icon = 2.5 A; lB = 0.5 A - 1.1 1.4 |IS »con = 2.5 A
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OCR Scan
KSC1845 KSD 166 KSD 168 kst 232 ksc2328 KST1623 KSA473 KSA539 KSA542 KSA614 KSA642 KSA643

BUT11AF

Abstract: ScansUX40 (6) - - 9 BUT11 SU 386 npn L-S (150) - 125 (5*) - - 10 - SU 387 npn L-S (150) - 200 (8*) - - 10 - SU
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OCR Scan
ScansUX40 BUT11F/BUT11AF 7110A5L

SSY20

Abstract: SF828 KSC2518 BUT11 KSC5039 BUT11A KSC5021 KSC5061 6 TIP41 BDW23 TIP42 BDW24 B0243 BD244 TIP41A
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OCR Scan
SSY20 SF828 funkamateur VEB mikroelektronik SF826 SF819 847/BCX BC848/BCW31 849/BCF BC857/BCW69 BC858/BCW29 859/BCF

ksd 250v 10a

Abstract: B0X34C D evice BU406 BU407 BU408 BU508AF BU806 BU807 BUT11 BUT12 Page 485 487 485 489 491 491 493 495
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OCR Scan
B0X34C ksa 3.3 IR 733 sa992 B0240 tip142 812/KSC SA812/KSC KSA812/KSC1623 KSA733/KSC945 KSA992/KSC KSA991/KSC1845

KSD 303

Abstract: ksd 180 .2 Vol.2 Vol.2 10. BU Series Device BU406 BU407 BU408 BU508AF BU806 BU807 BUT11 BUT12 Page Vol
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OCR Scan
KSP20 SS80S0 KSD 303 bd681 9 435 tip bc548 BC548 ksd 201 TIP BD140 KSA708 KSA709 KSA812 KSA910 KSA916 KSA928

ksd 168

Abstract: KSA 1102 ·BUT11 20 'BUT11 18 ·BUT11A 20 ·BUT60 19 ·BUT62 20 ·BUT70 19 ·BUT71 19 ·BUT72 20 ·BUT90 ·BUT91 ·BUT92
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OCR Scan
KSA 1102 ksd 301 ksp13 601 BD442 13003 sd 502 tip127 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013

bu2527af

Abstract: wk16412 -93 Isolated SOT-199 BUT11 BUT11F - BUX85 BUX85F - BUT12 BUT12F - BUT11A BUT11AF , -186 SOT-93 Isolated SOT-199 BUT11 BUT11F - BUX85 BUX85F - BUT12 BUT12F -
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Original
VQE14 VQE24 bu2527af wk16412 WK16413 WK16414 Tesla katalog GT322 GT322A GT328A GT328B GT346A GT346B

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w 251-057 BU508DF 681-787 BUT11 359-646 BUT11A 359-658 BUT11F 681-854 BUT12 , 3 0.8 BUT11 850 8 6 0.8 ss Q BUX84F ss Q BUT12 1000 0.5 1000
Philips Semiconductors
Original
1000w inverter PURE SINE WAVE schematic diagram 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w smps circuit diagram SCHEMATIC 1000w smps 48V SMPS 1000w

Zener Diode 3v 400mW

Abstract: transistor bc548b BUK543 BUK645 BUK551 BUK552 BUK553 BUK554 BUK555 BUK556 BUK583 BUK617 BUK637 BUK638 BUK655 BUK657 BUT11
Philips Semiconductors
Original
Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BU2520AF

BUV48I

Abstract: BU808DXI : BUT11 Notes: Polarity: NPN Power Dissipation: 100 VCEV: VCEO: 400 ICEV: ICEV A: hFE: 10 hFE A: 5.0 VCE: 1.5 VBE: 1.3 IC: 3.0 COB: fT: Case Style: TO-220AB/TO-220: Industry Type: BUT11 STI
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Original
BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

bf0262a

Abstract: BF0262 700 12 4 8 40 5 2 - 1 1 0.2 2.9 0.2 70 BUT11 400 850
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OCR Scan
1N4148 PXTA14 bf0262a BF0262 OM335 1N5821ID OM336 OM2061 1N821 1N821A 1N823 1N823A 1N825 1N825A

2N5101

Abstract: BUY46 7 4 40 20 80 0.3 ­ 1 2.5 0.7 BUT11 400 850 9 5 100 ­
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Original
BUZ342 2N5101 BUY46 BUW32 BUV21 ISO BUZ171 equivalent BUX23 2N5050 2N5052 2N5055 2N5056 2N5057 2N5058

BUK 450-1000

Abstract: tip122 tip127 audio board BUS13A BUS14A BUS46P BUS47 BUS47A BUS48 BUS48A BUT11 BUT11A BUT11AFI BUT11FI BUT12A BUT12AFI
Fairchild Semiconductor
Original
BUK 450-1000 tip122 tip127 audio board Transistor Selection Guide FJL6920 equivalent tip122 tip127 audio amp car amp KSH340 KSH350 MJD340 MJD350 S-17148 247TM

fjaf6812

Abstract: tip41 darlington J13335 BUT11 BUT 11 FI BUV46 BUV46FI SGSF321 SGSF421 SGSIF321 · Typical value 5 5 5 5 5 5 1.5
Fairchild Semiconductor
Original
fjaf6812 tip41 darlington BUT12(A)F fjaf6920 BDX538 bu408 equivalent KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953

DK53

Abstract: dk52 * BUS131* BUS132* BUS133* BUT11 BUT11A BUT11F BUT11AF BUT12 BUT12A BUT12F BUT12AF BUT18 BUT18A BUT18F
STMicroelectronics
Original
DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173

BUX22M

Abstract: U/25/20/TN26/15/850/yd 803 ic BUS13 BUS13A BUS14A BUS46P BUS47 BUS47A BUS48 BUS48A BUT11 BUT11A BUT11AFI BUT11FI BUT12A
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OCR Scan
BUX22M U/25/20/TN26/15/850/yd 803 ic bu808df1 je200 TIP+317+data+sheet JE13005 BD433 JE200 JE520 D44H1 D44H2 D44C1

FET BFW10

Abstract: KP101A MJ E13008 BU810 2N6930 SGSD00020 SGS13003T MJE13005 MJE13007 MJE13009 BUX84 BUT11 BUV46 SGSF321
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OCR Scan
BA583 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BA220 BA221 BA223 BA281 BA314 BA315

DK53

Abstract: dk52 BULT118 BUD620 KSE13008 BUF660 BULT118 BUD620 KSE13009 BUF660 BUT11 BUF646
STMicroelectronics
Original
MJ2955 BUL128 2SC4977 MJE102 2SA1046 BU808DFI equivalent MJ2955 replacement RCA29 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195

mje520

Abstract: SGS1F444 BUS48 BUS48A BUT11 BUT11A BUT11AFI BUT11FI BUT12A BUT12AFI BUT18 BUT18A BUT30V BUT32V BUT70 BUT70I BUT90
-
OCR Scan
mje520 SGS1F444 SGSD00030 BUW42AP 2m3771 BUT23 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037

SSP35n03

Abstract: bc417 N S IS T O R S (cont'd) Type BUR52 BUT11 BUT11A BUT 11AFI BUT 11 FI BUT12AFI BUT12FI BUT13 BUT13P
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA

equivalent transistor bul128

Abstract: HALL EFFECT 21E BUX84S BUT11 BUJ204A BUJ204BX BUT12F BUX87P BUX85 BUT11A BUT11AI BUJ303A BUJ304A BUT18A , 850 100 700 12 VCEO 550 500 450 400 0 = 0.5 A 1=1A 3=3A 4=4A 5=5A 6=6A INPUT
Temic Semiconductors
Original
equivalent transistor bul128 HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent BUL208 Shortform Transistor Guide

STRS6307

Abstract: STR5412 BUJ103AX BUJ105AX BUX86P BUX84S BUT11 BUJ204A BUJ204BX BUT12F BUX87P BUX85 BUT11A BUT11AI , 850 450 100 700 400 12 Icsat Specs 0 = 0.5 A 1=1A 3=3A 4=4A 5=5A 6=6A INPUT
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Original
3DD207 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766

B0411

Abstract: B0733 BUH515 11.34 BUH515D 11.34 BUH517 7.11 BUK456-100A 5.19 BUK456-100B 3.39 BUT11 3.08 BUT11A 2.04 BUT11AF
-
OCR Scan
B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 SGS-Thomson cross reference 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233

2M3055

Abstract: B0W94C -55A Standard Discontinuation. See Replacement. 58 BUT11 Silicon diffused power transistor 933494640127
-
OCR Scan
2M3055 B0W94C 2M5886 13007 hf BD908 bd333 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792

BU4508DX equivalent

Abstract: BUT11APX equivalent BUT11 BUT11A BUT46 BUV46 BYD11D BYD11G BYD11J BYD11K BYD11M BYD13D BYD13G BYD13J BYD13K
Philips Semiconductors
Original
BU4508DX equivalent S0806MH P0201MA TO92 BT136 application note BU2508Dx equivalent ct 2A05 diode FIN-02630 BP317 D-20097 H-1119 254-D BT148-600R

BU4508DX equivalent

Abstract: BUT11APX equivalent ,00 BUK445-500B 34,00 BUK454-500A 18,50 BUK455-500A 24,50 BUK543-100A 29,00 BUT11 15,60 BUT32V
Philips Semiconductors
Original
2SD1876 2Sd1651 equivalent BYS21-45 2SD1878 data sheet smd zener diode color band 2SC5296 equivalent BT148-400R BSH203 BSH201 BT132-600D BT134W-600D BT134W-600E

TXD10K40

Abstract: TXD10K60 BUT11 q 165 BUV50 BUT11A q 164 BUV51 M BREBH1 166 BUX98C q 164
-
OCR Scan
TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 S3131 BLU52 1N321 BYW56 1N321A BLV97

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model /TOOB BUKRST/8OOA BUKRST/8OOB BUKRST/1OOOB BURS1 BURS2 'BUS1S 'BUS1SA BUT11 'BUT11 BUT11A BUTTO BUTT2
Fairchild Semiconductor
Original
FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model TN3440A TN4033A TN5415A TN6705A TN6707A TN6714A