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EVK011A0B641Z GE Critical Power EVK011A0B Series (Eighth-Brick) DC-DC Converter Power Module, 36–60Vdc Input; 12.0Vdc Output; 11A Output Current visit GE Critical Power
EVK011A0B41Z GE Critical Power EVK011A0B Series (Eighth-Brick) DC-DC Converter Power Module, 36–60Vdc Input; 12.0Vdc Output; 11A Output Current visit GE Critical Power
PT6362C Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6936C Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, SMA23, ROHS COMPLIANT, SMD-23 visit Texas Instruments
PT6364N Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments
PT6362N Texas Instruments 11A SWITCHING REGULATOR, 400kHz SWITCHING FREQ-MAX, MSMA18, SIP-12 visit Texas Instruments

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Part : BUT11A Supplier : ON Semiconductor Manufacturer : Avnet Stock : 100 Best Price : €0.3559 Price Each : €0.6239
Part : BUT11A Supplier : STMicroelectronics Manufacturer : Avnet Stock : 23 Best Price : €0.2499 Price Each : €0.6539
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Part : BUT11AFTU Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 945 Best Price : $0.4240 Price Each : $1.09
Part : BUT11 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 350 Best Price : $0.94 Price Each : $0.94
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Part : BUT11TU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 3,049 Best Price : $0.60 Price Each : $0.60
Part : BUT11 Supplier : NXP Semiconductors Manufacturer : Bristol Electronics Stock : 48 Best Price : - Price Each : -
Part : BUT11AFTU Supplier : ON Semiconductor Manufacturer : RS Components Stock : 680 Best Price : £0.3320 Price Each : £0.5810
Part : BUT11AFTU Supplier : ON Semiconductor Manufacturer : RS Components Stock : 4,500 Best Price : £0.3320 Price Each : £0.6530
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Part : BUT11ATU Supplier : ON Semiconductor Manufacturer : RS Components Stock : 780 Best Price : £0.3220 Price Each : £0.5330
Part : BUT11A Supplier : Philips Semiconductors Manufacturer : Chip One Exchange Stock : 99 Best Price : - Price Each : -
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Part : BUT11A Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 807 Best Price : $0.5842 Price Each : $0.5842
Part : BUT11A Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 1,199 Best Price : $0.5842 Price Each : $0.5842
Part : BUT11AFTU Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 1,000 Best Price : $0.8860 Price Each : $0.8860
Part : BUT11AFTU Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 945 Best Price : $0.50 Price Each : $1.3360
Part : BUT11AFTU Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 945 Best Price : £0.4850 Price Each : £0.7130
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BUT11/11A

Catalog Datasheet MFG & Type PDF Document Tags

BUT11

Abstract: 250VLC BUT11/11A HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage : BUT11 : B U T 11A Collector Emitter Voltage : BUT11 : B U T 11A , Emitter Saturation Voltage Turn O n Time Storage Time Fall Time BUT11 BUT11A BUT11 BU T11A BUT11 B U T 11A BUT11 BUT11A Sym bol V c e o (s u s Test Condition ) Min 400 450 Typ M ax Unit V V mA , 1.3 1.3 1 4 (iS 0.8 i nS fiS 491 ELECTRONICS BUT11/11A NPN SILICON TRANSISTOR
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250VLC NPN Transistor VCEO 1000V BUT11/11A

BUT11A1

Abstract: BUT-11 BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon , , July 2000 BUT11/11A Typical Characteristics 1000 10 IC = 5 IB VCE(sat)[V], SATURATION , O TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B, July 2000 BUT11/11A , Symbol VCBO Value Units : BUT11 : BUT11A VCEO Parameter 850 1000 V V Collector-Emitter Voltage : BUT11 : BUT11A 400 450 V V Collector-Base Voltage VEBO Emitter-Base
Fairchild Semiconductor
Original
BUT11A1 BUT-11 BUT11A CIRCUIT

BUT-11

Abstract: BUT11A CIRCUIT BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon , BUT11/11A Typical Characteristics 1000 10 IC = 5 IB VCE(sat)[V], SATURATION VOLTAGE hFE , ], CASE TEMPERATURE Figure 6. Power Derating Rev. B1, August 2001 BUT11/11A Package Demensions , Symbol VCBO Parameter Value : BUT11 : BUT11A VCEO Units V Collector-Base Voltage 850 1000 Collector-Emitter Voltage : BUT11 : BUT11A 400 450 V VEBO Emitter-Base Voltage
Fairchild Semiconductor
Original

but11

Abstract: BUT-11 BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS TO , 400 450 : BUT11A Emitter Cutoff Current Min BUT11/11A NPN SILICON TRANSISTOR , W VCES Collector Base Voltage : BUT11 Collector Emitter Voltage : BUT11A VCEO : BUT11 Emitter Base Voltage : BUT11A ) Collector Dissipation ( T C=25 PC Junction , .Emitter ELECTRICAL CHARACTERISTICS (Tc =25) Characteristic *Collector-Emitter Sustaining Voltage Symbol : BUT11
Samsung Electronics
Original
transistor VCE 1000V to220 BUT11 equivalent transistor VCEO 1000V transistor VCE 1000V BUT11 transistor transistor emitter collector base

BUT11

Abstract: BUT-11 BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2 , , February 2000 BUT11/11A Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 BUT11/11A Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 , VCBO Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A , Sustaining Voltage : BUT11 : BUT11A Collector Cut-off Current : BUT11 : BUT11A IEBO VCE(sat) Emitter Cut-off
Fairchild Semiconductor
Original

BUT-11

Abstract: BUT11 BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit Collector Emitter Voltage BUT11 VcES 850 V BUT11A 1000 V Collector Emitter Voltage BUT11 VcEO 400 V BUT11A 450 V Emitter Base Voltage ,   BUT11/11A NPN SILICON TRANSISTOR DC CURRENT GAIN COLLECTOR EMITTER SATURATION VOLTAGE 0.1 0.2 05 1 2 , Current: 'Collector Emitter Sustaining Voltage: BUT11 BUT11A BUT11 BUT11A Emitter Cutoff Current
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BUT-11

Abstract: BUT11 BUT11/11A HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS NPN SILICON TRANSISTOR 7 0 -2 2 0 , ELECTRONICS BUT11/11A DC CURRENT GAIN NPN SILICON TRANSISTOR COLLECTOR EMITTER SATURATION VOLTAGE , Dissipation ( TC=25T:) Junction T emperature Storage Temperature : BUT11 : BUT11A : BUT11 : BUT11A V ebo lc , Time Fall Time * Pulsed Test: PW = 300uS, duty cycle = 1.5% Symbol BUT11 BUT11A BUT11 BUT11A BUT11 BUT11A BUT11 BUT11A V ceo (sus) Test Conditions lc = 100mA. IB = 0 VCE = 850V, V0E = 0 VCE= 1000V, V
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BUT11

Abstract: BUT-11 BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Symbol Rating Unit VCES 850 1000 400 450 9 5 10 2 4 100 150 -65~150 V V V V V A A A A W °c °c Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current , :BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BUTIIA :BUT11 :BUTIIA Turn-On Time Storage Time Fall
Wing Shing Computer Components
Original

BUT-11

Abstract: but11 BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VcES 850 V : BUT11 1000 V Collector Emitter Voltage :BUT11A VcEO 400 V : BUT11 450 V Emitter Base Voltage : BUT11A Vebo 9 V , Min Typ Max Unit *Collector-Emltter Sustaining Voltage : BUT11 Vceo (sus) lc= 100mA, lB= 0 400 V : BUT11A 450 V Collector Cutoff Current : BUT11 Ices VCE= 850V, Vbe = 0 1 mA : BUT11A VCE= 1000V
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PC100-W

d 42030 transistor

Abstract: AN-7505 BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 TO-220 2.Collector 3 , BUT11/11A Typical Characteristics 1000 10 100 VCE(sat)[V], SATURATION VOLTAGE VCE = 5V , Derating Rev. B1, August 2001 BUT11/11A Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 , Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A Emitter-Base Voltage , : BUT11 : BUT11A Collector Cut-off Current : BUT11 : BUT11A IEBO VCE(sat) Emitter Cut-off Current
Fairchild Semiconductor
Original
FAN6800 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 AN-9019 AN-140 AN-4101 AN-4102 AN-4103 AN-4108
Abstract: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS , : BU T 11 C ollecto r E m itter V oltage : BUT 11A V cE O : BU T 11 Em itter Base V oltage : BUT 11A Base C urrent (Pulse) Ib C ollecto r D issipation (Tc=25°C) Pc Junction Tem , Sustaining V oltage : BU T 11 V ceo (sus) Test C ond itio ns lc = 100mA, lB= 0 : B U T 11A C ollector C utoff C urrent Ices : B U T 11A V CE = 850V, VBE = 0 V CE= 1000V, V BE= 0 V 1 -
OCR Scan

BUT11A CIRCUIT

Abstract: BUT11 BUT11/11A HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BUT11 Collector Emitter Voltage Emitter Base , Dissipation (Tc=25°C) Junction Temperature Storage Temperature : B UT11A : BUT11 : B UT11A V ceo Symbol , Sustaining Voltage : BUT11 : BUT11A Collector Cutoff Current : BUT11A Emitter Cutoff Current Collector Emitter Saturation Voltage : BUT11 : BUT11A Base Emitter Saturation Voltage : BUT11A Turn On Time Storage
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OCR Scan

but11a

Abstract: but 11 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VcESM BUT11 BUT11A VcEO collector-emitter voltage BUT11 BUT11A >C BUT 11 ; BUT 11A PARAMETER collector-emitter peak , Semiconductors Product specification Silicon diffused power transistors BUT11; BUT 11A 30 to 60 Hz , collector; connected to mounting base emitter BUT11; BUT11A QUICK REFERENCE DATA SYMBOL VCESM BUT11 VcEO BUT11A collector-emitter voltage BUT11 BUT11A VcEsat lc I CM PARAMETER w (Û
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but 11 transistor but 11a MGB913 MQBG73

BUT11A CIRCUIT

Abstract: but11a collector; connected to mounting base emitter BUT11; BUT11A MBBOOS 3 1 2 3 Fig.1 Simplified , voltage BUT11 BUT11A VCEO collector-emitter voltage BUT11 BUT11A VcEsat ·c cm Ptot tf collector-emitter , (IEC 134). SYMBOL VcESM BUT 11 ; BUT 11A 'I'-'iiiv PARAMETER collector-emitter peak voltage BUT11 BUT11A collector-emitter voltage BUT11 BUT11A collector current (DC) collector current (peak value , otherwise specified. SYMBOL VcEOsust PARAMETER CONDITIONS BUT 11 ;BUT 11A MIN. TYP. MAX. UNIT
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But11a data
Abstract: N AUER PHILIPS/DISCRETE bbS3T31 0 0 2 6 3 ^ 221 b'lE J > BUT11 BUT11A , /DISCRETE B U T 11 BU T 11A b 'lE fc.bSS'm QD 2 a 4 DD 673 « A P X ]> RATINGS Lim iting values in accordance w ith the Absolute Maximum System (IEC 134). BUT11A BUT11 Collector-emitter , BUT11 BUT11A Silicon diffused power transistors Fig. 3 Test circu it fo r VQgQsustSwitching times resistive load (Figs 4 and 5) BUT11 *Con = 3 A; lg on = â'"'B o ff = 0,6 A Turn-on time ton ^Con -
OCR Scan
S3T31 MSA080- QD2A403

BUT11

Abstract: BUT11/BUT11APX equivalent SGS-THOMSON R fflD O I^ O lilL iO T r^ O R aD O i BUT11/FI BUT11A/AFI HIGH VOLTAGE SWITCH , Current Collector Peak Current Base Current Base Peak Current T O -2 2 0 850 400 Valu e BUT11 A /A FI , Unit < < E E mA V V o II Ie b o V ceo =0 for BUT11/FI for BUT11A/AFI I b (off) le = 3A for BUT11/FI le = 2.5A for BUT11A/AFI lc = 100mA 400 450 II V c E (s a t) lB = 0.6A 1.5 , ) Base-emitter Saturation Voltage le = 3A for BUT11/FI le = 2.5A for BUT11A/AFI le = 2.5A lB = lB2 = 0.5A
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BUT11/BUT11APX equivalent BUT11/FI 11FI/AFI T0-220 ISOWATT220 WATT220 ISOWATT22Q

BUT11 equivalent

Abstract: transistor t220 715^53^ QQ£flb55 0 â  ' SCS-THOMSON BUT11 Fl itLieiri(Q)10(gi B UT11 A/AFI S G S-THOMSON 3QE J> HIGH VOLTAGE SWITCH DESCRIPTION The BUT11/A and BUT11FI/AFI are silicon miltiepi-taxial mesa , Parameter Value Unit BUT11/FI BUT11A/AFI VcES Collector-emitter Voltage (Vbe = 0) 850 1000 V VcEO , . Operating Junction Temperature 150 °C December 1988 1/5 379 BUT11/FI-BUT11A/AFI Hi 7^2^37 QQ26b2b 2 â , Collector-emitter Sustaining Voltage Ib (oil) = 0 lc = 100mA for BUT11/FI for BUT11 A/AFI 400 450 V V VcE(sal
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transistor t220 ph but11a BUT11A APPLICATION 11AFI but11fi 7929 BUT11/A ISOWATT-220 BUT11/FI-BUT11A/AFI T-33-73 ISO-WATT220

diode 1000V 10a

Abstract: 200v 1.5v 3a diode BUT11 BUT11A BUT11F BUT11AF BUW11 BUW 11A BUT211 BUT18 BUT18A BUT18F BUT18AF Package Outline TO-126 TO
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OCR Scan
4045AV diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A DIODE 2A 400V diode 6A 1000v BU407 BUV28 BUV28A BUV27 BUV27A BUV26

BUT11A

Abstract: BUT11 DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A , peak voltage MAX. UNIT VBE = 0 BUT11 V BUT11A 1000 V BUT11 400 V , Product specification Silicon diffused power transistors BUT11; BUT11A LIMITING VALUES In , collector-emitter peak voltage VCESM MIN. MAX. UNIT VBE = 0 - 850 V - 1000 V BUT11
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Original
MGE252 MBB008 MBK106 MGE244 MBH383 MGE238

but11

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product , Philips Semiconductors Product specification Silicon diffused power transistors BUT11; BUT11A , peak voltage MAX. UNIT VBE = 0 BUT11 V 1000 V BUT11 400 V BUT11A , Product specification Silicon diffused power transistors BUT11; BUT11A LIMITING VALUES In , collector-emitter peak voltage MIN. MAX. UNIT VBE = 0 BUT11 850 V BUT11A - 1000 V
Philips Semiconductors
Original
SCA55
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