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Part Manufacturer Description Datasheet BUY
ISL90461UIE627 Intersil Corporation 50K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDSO6, PLASTIC, SC-70, MO-203-AB, 6 PIN visit Intersil
ISL84716IH-T Intersil Corporation 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO5, PLASTIC, MO-203-AA, SC-70, 5 PIN visit Intersil
ISL90460TIE527 Intersil Corporation 100K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDSO6, PLASTIC, SC-70, MO-203-AB, 6 PIN visit Intersil
ISL90461TIE627 Intersil Corporation 100K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDSO6, PLASTIC, SC-70, MO-203-AB, 6 PIN visit Intersil
ISL90461UIE627-TK Intersil Corporation 50K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDSO6, PLASTIC, SC-70, MO-203-AB, 6 PIN visit Intersil
ISL90462WIE627 Intersil Corporation 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDSO6, PLASTIC, SC-70, MO-203-AB, 6 PIN visit Intersil

BUP+203 Datasheet

Part Manufacturer Description PDF Type
BUP 203 Infineon Technologies IGBT Chip, 1000V, TO-220, 3-Pin Original
BUP203 Infineon Technologies IGBT Original
BUP203 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUP203SMD Infineon Technologies IGBT Transistor Original

BUP+203

Catalog Datasheet MFG & Type PDF Document Tags

LS303

Abstract: BUP 303 free wheeling diode BYP 101 G E Type BUP 203 BUP 303 ^CE 1000 V 1000 V 21 A 21 A Maximum , . BUP 203 BUP 303 Package 1> TO-220 AB TO-218 AA Ordering Code C67078-A4402-A2 C67078-A4202-A2 , voltage V^GE = ^C E > = 0 -^ / ces ^ (B R ) CES BUP 203 BUP 303 Values typ. max. Unit 1000 , 10 A /? s(on) = 3 .3 n , ftg(off) = 3 .3 g , 7 ~ | = 125 'C Semiconductor Group BUP 203 BUP , 140 170 ns 10 20 30 ^ off 1 0.5 0.6 mWs 743 SIEMENS BUP 203 BUP 303
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OCR Scan
LS303 BUP 303
Abstract: SIEMENS BUP 203 IGBT Preliminary data â'¢ Low forward voltage drop â'¢ High switching , Package CO CM Ordering Code TO-220 AB < BUP 203 V E 'C h 1000V Pin 2 G , 4b â  SIEMENS BUP 203 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 , 20 V, /c = 10 A 1148 A235bG5 OOflH'nD 7bfi 12.95 SIEMENS BUP 203 Electrical , 12.95 bTM â  SIEMENS BUP 203 Ptat-fOb) parameter: 7j -
OCR Scan
Q67078-A4402-A2

BUP203

Abstract: BUP 203 IGBT Preliminary data · Low forward voltage drop · High switching speed · Low tail current · Latch-up free · Avalanche rated Pin 1 VCE IC BUP 203 1000V 23A Pin 3 G , Semiconductor Group 1 °C Dec-06-1995 BUP 203 Maximum Ratings Parameter Symbol DIN , , f = 1 MHz Output capacitance S 2 Dec-06-1995 BUP 203 Electrical Characteristics, at , RGoff = 47 Semiconductor Group - 3 1.3 - Dec-06-1995 BUP 203 Power dissipation
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A4402

Abstract: BUP 203 IGBT · Low forward voltage drop · High switching speed · Low tail current · Latch-up free · Avalanche rated Pin 2 Pin 1 G Type VCE IC BUP 203 1000V A Pin 3 C , Semiconductor Group W 165 1 Nov-20-1997 BUP 203 Maximum Ratings Parameter Symbol Values , 1 MHz Output capacitance S 2 Nov-20-1997 BUP 203 Electrical Characteristics, at Tj , RGoff = 47 , Tj = 25 °C Semiconductor Group - 3 1.3 - Nov-20-1997 BUP 203 Power
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A4402

BUP203

Abstract: · Latch-up free · Avalanche rated Pin 1 G Type B U P 203 Maximum Ratings Parameter Collector-emitter , BUP 203 Pin 3 E Ordering Code Q67078-A4402-A2 Unit V A rc = 90 °C Avalanche energy , Thermal Resistance IGBT thermal resistance, chip case ^IhJC , < J(off) 30 50 ^ g e = 15 V, / q =10A íd(on) 40 fr 60 Values typ. max. BUP 203 Unit ns ft , parameter: 7¡
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OCR Scan
GPT05155

BUP 312

Abstract: BUZ22 SIEMENS Typ Type BUP 200 BUP200D BUP 202 BUP 203 BUP 213 BUP 300 BUP 302 BUP 303 BUP 304 BUP 305D BUP 306D BUP 307 BUP 307D BUP 309 BUP 313D BUP 314 BUP314D BUP 400 BUP 400D BUP 401 BUP 402 BUP 403 BUP410D BUP 602D BUP 603D BUP 604 BUZ 10 BUZ 1 0 L BUZ 10 S2 BUZ 11 Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Q67078-A4400-A2 Q67040-A4420-A2 , 200 Q67078-A4401-A2 BUP 202 Q67078-A4402-A2 BUP 203 Q67078-A4403-A2 BUP 400 Nicht für Neuentw
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BUP 312 BUZ22 276 603d buz171 BUZ 81 bup300 Q67040-A4407-A2 Q67078-A4203-A2 Q67078-A4205-A2 Q67078-A4202-A2 Q67078-A4200-A2 Q67040-A4225-A2

buz 350 equivalent

Abstract: BUP 203 -220 TO-220 TO-220 TO-220 Seite Page 155 163 171 179 187 195 203 211 219 227 235 243 , 9.0 IGBT-Transistoren Typ Type BUP 200 BUP 202 BUP 203 BUP 213 BUP 300 BUP 302 BUP 303
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buz 350 equivalent transistor buz 36 BUP 304 leistungstransistoren BUP 200 bup 213

BUP 200

Abstract: bup 400 \ Typ. transfer characteristics lc = f Wge) parameter: tP = 80 \xs, VCE = 20 V, 7j = 25 °C BUP 203 , ( ^Ge) parameter: 7} = 125 °C BUP 203/BUP 303 SIL02024 10 Vr CEsat V A 1( >A 15A 20
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Q67040-A4222-A2 BUP306D bup 400 df ge IR-3050 SIL02023 1OGD100D SII00312 GPT05156

SIEMENS 1200

Abstract: bup203 SIEMENS IGBTLeistungstransistoren Typ Type BUP 202 BUP 203 BUP 302 BUP 303 BUP 304 IGBT Power transistors Bestellnummer Ordering code C67078-A4401-A2 C67078-A4402-A2 C67078-A4205-A2 C67078-A4202-A2 C67078-A4200-A2 Gehäuse Package TO-220 AB TO-220 AB TO-218 AA TO-218 AA TO-218 AA Bild Figure 8b 8b 5b 5b 5b h A 12.0 21.0 12.0 21.0 35.0 1000 1000 1000 1000 1000 BUP 200 BUP 300 BUP 307 1200 1200 1200 FRED Schnelle Dioden Typ Type BYP 100 BYP 101 BYP 102 BYP 103 ^RRM V rms frr LU
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C67078-A4400-A2 SIEMENS 1200 siemens dioden C67078-A4203-A2 C67078-A4201-A2 C67047-A2254-A2 C67047-A2072-A2 C67047-A2071-A2

al394

Abstract: BUP 300 203 BUZ 15 BUZ 24 BUZ 53 A BUZ 54 BUZ 54 A BUZ 64 BUZ 36 BUZ 16 BUZ 10 BUZ 11 BUZ 11 A BUZ 11 S2 BUZ , 238 259 266 203 245 273 318 370 370 402 402 410 410 354 354 386 386 426 418 418 456 456 347 362 378
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0C67O78-S311O-A2 al394 BUP 300 s1348 S1338 S1314 0C67O47-A2O66-A2 0C67O47-A2O71-A2 0C67O47-A2O72-A2 0C67O47-A225O-A2 0C67O47-A2251-A2 0C67O47-A2252-A2
Abstract: current Low tem perature sensitivity A valanche-proof La tch-up -fre e Package: TQ -220 A B 1) BUP 203 Type BUP 203 Ordering code C 67078-A 4402-A 2 Maximum Ratings Parameter C o lle cto r-e m itte , as T , ^ s tg ^ t h JC BUP 203 Electrical Characteristics at Tj = 25 °C, unless otherw , VC E = 25 V, VG E = 0, f = 1 MHz Siem ens A ktiengesellschaft 6 82 BUP 203 Switching -
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buz 342 G

Abstract: DIODE BUZ 28.0 36.0 49.0 BUP 202 BUP 203 12.0 21.0 BUP 200 3.5 BUP 213 30.0
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346S2 buz 342 G DIODE BUZ z347 diode z104 z349 z332a 102AL 103AL

leistungstransistoren

Abstract: bup314d Transistors c k o Gc E TO-220 AB VcE z Typ Type BUP 400 BUP 401 BUP 402 BUP 403 BUP 202 BUP 203 BUP
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BUP 307D siemens 230 95 O BUZ382 BUZ345 buz341 BUZ,350 BUZ12A BUZ11S2 BUZ10S2 BUZ100L BUZ102AL BUZ12AL

L-3019

Abstract: BUP 303 IGBT °C parameter: fp = 80 //s, 7] = 125 °C BUP 203/BU P 303 SIL02021 A 40 35 30 25 20 15
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L-3019 BUP 303 IGBT c4630 203/BU PT05156

BUP61

Abstract: BUP63 SENELAB LTD 3?E D 01331Ã"7 G00D23D fi «SULB DEC 3 1 198? SEI\ um LAB BUP 61 Tk-V ? Moó BUP63 MECHANICAL DATA Dimensions in mm MOS POWER IM-Channel Enhancement Mode Tâ'"39-13 T" 30.1 20.3 APPLICATIONS â'¢ SWITCHING REGULATORS â'¢ CONVERTERS â'¢ MOTOR DRIVERS PIN 1-Gate PIN2-Source CASE-Drain TO 3 Thin ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise specified) Parameter BUP 61 BUP 63 Vos Drain source voltage 350V 400V VoGR Drain gate voltage (RGS = I Mil) 350V 400V l0@Tc = 25°C Continuous
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BUP61 LE17 15CPC T-39-13

BUP 312

Abstract: BUP 203 BUP BUP BUP BUP BUP 202 203 213 300 302 303 304 307 309 314 400 401 402 403 604 f 'C E IGBT
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buz 91 f DIODE BUZ 537 BUZ11A BUP313D

BUZ332A

Abstract: BUZ54A TO-220 AB V cE TO-218 AA Type BUP 302 BUP 303 BUP 304 BUP 300 BUP 307 Type BUP 202 BUP 203
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BUZ332A BUZ54A BUZ p channel BUZ357 Buz94 BUZ,271 VUT05152 VP1C5381 T05J79

BUP60

Abstract: BUP62 â'" SEMELAB LTD 37E D _ 61331Ã"7 GOGOSSfl T «StlLB DEC 3 Ì MECHANICAL DATA Dimensions in mm ,ü> feiT BUP 60 no 7 /Voö^BUP62 MOS POWER N-Channel Enhancement Mode T-39-13 T" 30.1 1 20.3 APPLICATIONS â'¢ SWITCHING REGULATORS â'¢ CONVERTERS â'¢ MOTOR DRIVERS PIN 1-Gate PIN2-Source CASE-Drain TO 3 Thin ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise specified) Parameter BUP 60 BUP 62 vDS Drain source voltage 350V 400V ^DGfl Drain gate voltage (RGS = I Mil) 350V
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BUP60 TC-125 RL-67

BUP68

Abstract: BUP69 SEMELAB LTD 37E D A1331B7 00DD535 7 â SfILB DEC * * 1987 MECHANICAL DATA Dimensions in mm Ã? gy BUP68 TtLoyfifoo m BUP 69 MOS POWER N-Channel Enhancement Mode Tâ'"39â'"15 T" 30.1 ! 20.3 APPLICATIONS â'¢ SWITCHING REGULATORS â'¢ CONVERTERS â'¢ MOTOR DRIVERS PIN 1-Gate PIN2-Source CASE-Drain TO 3 Thin ABSOLUTE MAXIMUM RATINGS (TMSE = 25°C unless otherwise specified) Parameter BUP 68 BUP 69 V0s Drain source voltage 350V 400V VoGR Drain gate voltage (Ras = 1 Mil) 350V 400V lD@Tc = 25°C Continuous drain current Â
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BUP69 D00023 VDS-25V

thyristor Q 720 To220

Abstract: siemens bsm200ga120dn2 BUP 202 BUP 203 BUP 200 BUP 213 Econopack 2 (six-pack) BSM10GD60DN2 BSM15GD60DN2
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thyristor Q 720 To220 siemens bsm200ga120dn2 bup transistor BSM15GD BSM50GD120DN2 siemens igbt welding
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