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Part : BUL810 Supplier : STMicroelectronics Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BUL810 Supplier : STMicroelectronics Manufacturer : ComSIT Stock : 210 Best Price : - Price Each : -
Part : BUL810 Supplier : STMicroelectronics Manufacturer : Farnell element14 Stock : - Best Price : £1.85 Price Each : £3.14
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BUL810 Datasheet

Part Manufacturer Description PDF Type
BUL810 STMicroelectronics High Voltage Fast-Switching NPN Power Transistor Original
BUL810 STMicroelectronics High voltage fast-switching NPN power transistor Original
BUL810 STMicroelectronics High voltage fast-switching NPN power transistor Original
BUL810 STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Original
BUL810 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BUL810 N/A Shortform Data and Cross References (Misc Datasheets) Scan

BUL810

Catalog Datasheet MFG & Type PDF Document Tags

electronic transformer halogen

Abstract: BUL810 BUL810 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s SGS-THOMSON , DESCRIPTION The BUL810 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective , Max. Operating Junction Temperature W -65 to 150 o C 150 o C 1/6 BUL810 , 80 2.3 110 µs ns µs ns BUL810 DC Current Gain DC Current Gain Collector Emitter , BUL810 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits (1) Fast electronic
STMicroelectronics
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electronic transformer halogen P025A

BUL810

Abstract: JESD97 BUL810 High voltage fast-switching NPN power transistor Features High voltage capability , . Description Internal schematic diagram The BUL810 is manufactured using high voltage multiepitaxial , BUL810 BUL810 TO-247 Tube March 2008 Rev 4 1/10 www.st.com 10 Electrical ratings 1 BUL810 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter , Parameter Thermal resistance junction-case Thermal resistance junction-ambient _max _max BUL810
STMicroelectronics
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JESD97

BUL810

Abstract: Halogen lighting transformer BUL810 ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s , DESCRIPTION The BUL810 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective , 150 o C 1/6 BUL810 THERMAL DATA R thj-case R thj-amb Thermal Resistance , 10 10 40 2.3 110 µs ns µs ns BUL810 DC Current Gain DC Current Gain , Storage Time 3/6 BUL810 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuits
STMicroelectronics
Original
Halogen lighting transformer halogen transformer
Abstract: BUL810 High voltage fast-switching NPN power transistor Features I High voltage capability , power supplies. Figure 1. Description Internal schematic diagram The BUL810 is manufactured , Package Packaging BUL810 BUL810 TO-247 Tube March 2008 Rev 4 1/10 www.st.com 10 Electrical ratings 1 BUL810 Electrical ratings Table 2. Absolute maximum ratings , _max _max BUL810 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C STMicroelectronics
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Abstract: BUL810 High voltage fast-switching NPN power transistor Features â  High voltage capability , power supplies. ete ol bs O Figure 1. Description )(s The BUL810 is manufactured , code Marking Package Packaging BUL810 BUL810 TO-247 Tube March 2008 Rev 4 1/10 www.st.com 10 Electrical ratings BUL810 Electrical ratings 1 Table 2 , ) Ptot (s) ct Unit 1 30 °C/W °C/W BUL810 2 Electrical characteristics STMicroelectronics
Original
Abstract: DESCRIPTION The BUL810 is manufactured using high voltage Multiepitaxial Mesa technology tor cost-ettective , A W °C Plot Tstg Tj °c March 1 998 1/6 BUL810 THERMAL DATA Rlh]-case Rlh]-amb T h , : Pulse duration = 300 jis, duly cycle 1.5 % Safe Operating Areas Derating Curve BUL810 DC , 8 10 12 lc(A) 0 2 4 6 8 10 5J 3/6 BUL810 Reverse Biased SO A , Resistor (3) Fast recovery rectitier 4/6 BUL810 TO-218 (SOT-93) MECHANICAL DATA mm MIN. A C D E -
OCR Scan
Abstract: SGS-THOMSON RfflD0lsi®i[Liera®[i!lDS$ BUL810 HIGH VOLTAGE FAST-SWITCHING NPN POWER , SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL810 is manufactured using high voltage Multiepitaxial , °C 150 °c 1/6 BUL810 THERMAL DATA Therm al Therm al Resistance Junction-C ase , 10 40 1 .5 55 1 .9 80 2.3 110 |X S ns |X S ns BUL810 DC Current Gain , BUL810 RBSOA and Inductive Load Switching Test Circuits Reverse Biased SOA lc (A ) h FE = 5 -
OCR Scan
GC26301

BUL810

Abstract: BUL810 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s SGS-THOMSON , DESCRIPTION The BUL810 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective , BUL810 THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-Case Thermal Resistance , 110 µs ns µs ns BUL810 DC Current Gain DC Current Gain Collector Emitter Saturation , BUL810 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic
STMicroelectronics
Original

BUL810

Abstract: BUL810 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s SGS-THOMSON PREFERRED , -218 DESCRIPTION The BUL810 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective , 10 125 -65 to 150 150 Unit V V V A A A A W o o C C 1/6 December 1994 BUL810 THERMAL DATA , 2/6 BUL810 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL810 Reverse
STMicroelectronics
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5-E51

Abstract: transistor bb Decem ber 1994 1/6 BUL810 THERM AL Rlhj-case Rlhj -amb DATA T h e rm a l T h e rm a l R e , rv e s 2/6 SGS-THOMSON BUL810 D C C u rre n t G a in D C C u rre n t G a in C o , offlocR oigyicirftgrcioes BUL810 R e v e rs e B ia s e d S O A R B S O A a n d In d u c tiv e , SGS-THOMSON BUL810 T O - 2 1 8 (SOT-93) ME CHA NI CAL DATA mm D IM . M IN . TYP. MAX. M IN . in c , BUL810 ln1orma1ion furnished is believed to be accurate and reliable. However, SGS-THOMSON
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OCR Scan
5-E51 transistor bb SC069

NPN Transistor VCEO 1000V

Abstract: transistor VCE 1000V isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL810 DESCRIPTION ·High Voltage Capability ·High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. ·Electronic transformer for halogen lamps ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL , BUL810 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS
INCHANGE Semiconductor
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NPN Transistor VCEO 1000V transistor VCE 1000V transistor VCBO 1000V IC 100mA transistor VCEO 1000V 1000v, NPN 8A NPN Transistor 8A

DIAC DB3 EQUIVALENT

Abstract: sttb-406 200W BUL87 STP5N30 STP7NA40 STP8NA40 BUL810 > 200W BUL810 STP9N30 STP8NA40 STP10NA40 POWER MOS , BUL87 BULT118 BUL38D BUL58D BUL510 BUL810 VCES [V] 700 700 700 800 800 1000 1000 8 5 4 2 8 8 5 Ic [A
STMicroelectronics
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PO130AL DIAC DB3 EQUIVALENT sttb-406 STD3N50-1 po130aa DB3 Diac EQUIVALENT diac 240V BULK128/D BUL128/D BUL381/2 BUL381D/2D BUL138 STK4N25

DK53

Abstract: dk52 BUL382D BUL38D BUL416 BUL510 BUL770 BUL791 BUL810 BULD85KC BULD50KC BULD118-1 BULD118D , BUL128 BUL138 BUL810 BUL128D BUL128D BULD118-1 BULD118D-1 BUL382D BIPOLAR TRANSISTORS CROSS
STMicroelectronics
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MJ2955 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

DIAC DB3 EQUIVALENT

Abstract: equivalent for DIAC DB3 -1 STP5N50 STP3NA60 STP4NA60 POWER MOS TRANSISTORS 150W BUL67 200W BUL87 > 200W BUL810 STD4NA40 STP4N40 STP7NB40 BUL87 STD4NA40 STP7NA40 STP9NB40 BUL810 STP11NB46 STP8NA40 , 1.20 1.00 BIPOLAR TRANSISTORS Type BUL67 BUL87 BULT118 BUL38D BUL58D BUL510 BUL810 VCES
STMicroelectronics
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equivalent for DIAC DB3 Triac 600v 1a to92 STP16N25 L6561 200w 1A 400v scr to220 triac 4a 400v L6560/A L6561 STP4NA40 STTB106U STTB406 L6569/A

BUL67

Abstract: BUL216 CONSUMER ELECTRONIC LIGHT BALLAST BIPOLAR TRANSISTORS FOR ELECTRONIC LIGHTING VCEO VCES Type (V) BULT118 BULT118D BULK128D BUL128 BUL128D BUL57 BUL67 BUL87 BULD38-1 BUL138 BUL381 BUL381D BUL382 BUL382D BUL38D BULK38D BUL58D BUL510 BUL810 BUL310 BUL213 BUL216 BUL416 · Resistive load IC Ptot Package hFE @ IC / VCE min (A) SOT-32 SOT-32 SOT-82 TO-220 TO-220 TO-220 TO-220 TO-220 DPAK TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 SOT-82 TO-220 TO-220 SOT-93 TO-220 TO-220 TO-220 TO-220 8 8 8 8 8 6 15 8
STMicroelectronics
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BUV26

Abstract: but100 SELECTION GUIDE BY PART NUMBER DEVICE TYPE VceO NPN BUL310PI BUL381 BUL381D BUL382 BUL382D BUL416 BUL510 BUL810 BULD118-1 BULD118D-1 BULD128D-1 BULK38D BULK128D BULK380D BULK381D BULT118 BULT118D BUR50S BUR51 BUR52 BUT11A BUT12AFI PNP (V) 500 400 400 400 400 800 450 450 400 400 400 450 400 400 400 400 400 125 200 250 450 450 125 300 125 125 250 300 125 300 250 60 125 200 325 90 120 200 400 450 400 400 450 450 600 700 700 400 125 200 VcBO VcES Vcev (V) 1000 800 800 800 800 1600 1000 1000 700 700 700
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OCR Scan
BUV26 but100 BUT30V BUT32V BUT70 BUT90 BUT92 BUT92A

Electronic ballast 220 v 40W

Abstract: diode SOT-82 package CONSUMER ELECTRONIC LIGHT BALLAST BIPOLAR TRANSISTORS FOR ELECTRONIC LIGHTING TYPICAL APPLICATION Package VCEO Device (V) BULD118-1 BULD118D-1 BULD128D-1 ST13003 BULT118 BULT118D BULK128D BULK380D BULK381D BULK38D BUL128 BUL128D ST13005 BUL57 ST13007 BUL67 BUL87 BUL138 BUL381 BUL381D BUL382 BUL382D BUL38D BUL58D BUL510 BUL310 BUL213 BUL216 BUL416 BUL57PI BUL310PI BUL810 400 400 400 400 400 400 400 400 400 450 400 400 400 400 400 400 400
STMicroelectronics
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Electronic ballast 220 v 40W diode SOT-82 package Electronic ballast 80W 40w electronic ballast ballast 80W Fluorescent BALLAST 140W ISOWATT220

electronic transformer bul59

Abstract: BUL39D BUL87 BUL810 a Reverse Biased Safe Operating Area with a Vcew capability up to 450V at high current
STMicroelectronics
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BUL39D BUL49D BUL59 electronic transformer bul59 transistor TO220 current tranformer bul49d equivalent BUL39D/BUL49D/BUL59

B0411

Abstract: B0733 BUL216 BUL310 BUL310PI BUL381 BUL381D BUL382 BUL382D BUL38D BUL416 BUL510 BUL770 BUL791 BUL810 BULD85KC , BULK380D BULD118-1 BULD118D-1 BUL382D BULD128D-1 BUL67 BUL810 BUL128D BUL128D BUL213 BUL216 BUL310 BUL310PI
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OCR Scan
B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 SGS-Thomson cross reference 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173

BUX98PI

Abstract: TIP147T BUL381 BUL381D BUL382 BUL382D BUL416 BUL510 BUL810 BUL903ED BUL1403ED PNP VCBO VCES VCEV , 36 TO-220FP up to 120 W BUL810 450 1000 15 125 TO-218 up to 300 W Û = 277V AC mains
STMicroelectronics
Original
BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038
Abstract: BUL87 BUL810 a Reverse Biased Safe Operating Area with a Vcew capability up to 450V at high current -
OCR Scan
50/60H 2000VAC 1000M 200VAC 250VAC

tab ul 310

Abstract: CONSUMER ELECTRONIC LIGHT BALLAST BIPOLAR TRANSISTORS FOR ELECTRONIC LIGHTING TYPICAL APPLICATION Package VCEO Device (V) BULD118-1 BULD118D-1 BULD128D-1 ST13003 BULT118 BULT118D BULK128D BULK380D BULK381D BULK38D BUL128 BUL128D ST13005 BUL57 ST13007 BUL67 BUL87 BUL138 BUL381 BUL381D BUL382 BUL382D BUL38D BUL58D BUL510 BUL310 BUL213 BUL216 BUL416 BUL57PI BUL310PI BUL810 400 400 400 400 400 400 400 400 400 450 400 400 400 400 400 400 400
Nichicon
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tab ul 310 UL810 E86988 440VAC 500VDC 8100Q
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