BUK7675-100A |
|
NXP Semiconductors
|
BUK7675-100A - TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 23 A; Qgd (typ): 9 nC; RDS(on): 75@10V mOhm; Thermal Resistance: 1.5 K/W; VDSmax: 100 V |
|
Original |
PDF
|
BUK7675-100A |
|
Philips Semiconductors
|
TrenchMOS standard level FET |
|
Original |
PDF
|
BUK7675-100A,118 |
|
NXP Semiconductors
|
TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 23 A; Qgd (typ): 9 nC; RDS(on): 75@10V mOhm; Thermal Resistance: 1.5 K/W; VDSmax: 100 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
|
Original |
PDF
|
BUK7675-100A,118 |
|
NXP Semiconductors
|
BUK7675-100 - TRANSISTOR 23 A, 100 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
|
Original |
PDF
|
BUK7675-100A/T3 |
|
NXP Semiconductors
|
TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 23 A; Qgd (typ): 9 nC; RDS(on): 75@10V mOhm; Thermal Resistance: 1.5 K/W; VDSmax: 100 V |
|
Original |
PDF
|
BUK7675-55 |
|
Philips Semiconductors
|
TrenchMOS Transistor Standard Level FET |
|
Original |
PDF
|
BUK7675-55A |
|
NXP Semiconductors
|
BUK7675-55A - TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 20 A; Qgd (typ): 5 nC; RDS(on): 75@10V mOhm; Thermal Resistance: 2.4 K/W; VDSmax: 55 V |
|
Original |
PDF
|
BUK7675-55A |
|
Philips Semiconductors
|
TrenchMOS standard level FET |
|
Original |
PDF
|
BUK7675-55A118 |
|
NXP Semiconductors
|
NOW NEXPERIA BUK7675-55A - POWER |
|
Original |
PDF
|
BUK7675-55A,118 |
|
NXP Semiconductors
|
TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 20 A; Qgd (typ): 5 nC; RDS(on): 75@10V mOhm; Thermal Resistance: 2.4 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
|
Original |
PDF
|
BUK7675-55A,118 |
|
NXP Semiconductors
|
BUK7675 - TRANSISTOR 20.3 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
|
Original |
PDF
|
BUK7675-55A/T3 |
|
NXP Semiconductors
|
TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 20 A; Qgd (typ): 5 nC; RDS(on): 75@10V mOhm; Thermal Resistance: 2.4 K/W; VDSmax: 55 V |
|
Original |
PDF
|
BUK767555T3 |
|
Philips Semiconductors
|
TrenchMOS transistor Standard level FET |
|
Original |
PDF
|