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BU407 ON Semiconductor Power 7A 150V DEF NPN, 1200-BLKBG visit Digikey
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Part : BU407 Supplier : Central Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.6619 Price Each : $0.7229
Part : BU407 Supplier : STMicroelectronics Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : BU4070B Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.3199 Price Each : $0.3949
Part : BU4070BF-E2 Supplier : ROHM Manufacturer : Avnet Stock : - Best Price : $0.2549 Price Each : $0.3139
Part : GBU407 D2 Supplier : Taiwan Semiconductor Manufacturer : Allied Electronics & Automation Stock : 925 Best Price : $0.81 Price Each : $0.87
Part : BU407 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 50 Best Price : $0.34 Price Each : $0.34
Part : BU407G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 230 Best Price : $0.42 Price Each : $0.42
Part : BU407 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 138 Best Price : $0.2812 Price Each : $0.75
Part : BU407 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 34 Best Price : - Price Each : -
Part : PBU407 Supplier : Lite-On Semiconductor Manufacturer : Bristol Electronics Stock : 50 Best Price : $1.6875 Price Each : $2.70
Part : GBU407 D2 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 1,620 Best Price : £0.2310 Price Each : £0.2790
Part : KBU407G T0 Supplier : Taiwan Semiconductor Manufacturer : RS Components Stock : 235 Best Price : £0.5480 Price Each : £1.1380
Part : GBU407 D2G Supplier : Taiwan Semiconductor Manufacturer : Chip1Stop Stock : 1,000 Best Price : $0.7836 Price Each : $0.7836
Part : GBU407-04 X0 Supplier : Taiwan Semiconductor Manufacturer : Chip1Stop Stock : 500 Best Price : $0.9940 Price Each : $0.9940
Part : BU407 Supplier : Thomas & Betts Manufacturer : Sager Stock : - Best Price : $29.59 Price Each : $32.64
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BU407 Datasheet

Part Manufacturer Description PDF Type
BU407 Bourns NPN SILICON POWER TRANSISTORS Original
BU407 Continental Device India NPN Plastic Power Transistors Original
BU407 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BU407 On Semiconductor NPN SILICON POWER TRANSISTORS Original
BU407 Philips Semiconductors Silicon Diffused Power Transistor Original
BU407 Power Innovations NPN SILICON POWER TRANSISTORS Original
BU407 Sinyork Mini size of Discrete semiconductor elements Original
BU407 STMicroelectronics HIGH CURRENT NPN SILICON TRANSISTOR Original
BU407 USHA NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. Original
BU407 Various Russian Datasheets Transistor Original
BU407 Wing Shing Computer Components SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) Original
BU407 Boca Semiconductor NPN POWER TRANSISTOR Scan
BU407 Central Semiconductor NPN Silicon Power Transistor, TO-220 Scan
BU407 Central Semiconductor Power Transistors Scan
BU407 Continental Device India Semiconductor Device Data Book 1996 Scan
BU407 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan
BU407 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BU407 Mospec POWER TRANSISTORS(7A,150-200V,60W) Scan
BU407 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BU407 Motorola European Master Selection Guide 1986 Scan
Showing first 20 results.

BU407

Catalog Datasheet MFG & Type PDF Document Tags

BU406

Abstract: bu407 BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector , ) Emitter-base voltage Continuous collector current BU407 BU406 BU406 BU406 SYMBOL V CBO VCEX V CEO VEB ICM Ptot Tstg Tj IB IC VALUE 400 330 400 330 200 150 6 7 4 UNIT V V V V A A A BU407 BU407 Continuous , , BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless , and 3) f = 1 MHz f = 1 MHz (see Note 4) 6 60 12 20 1 1.2 V V MHz pF TC = 150°C TC = 150°C BU406 BU407
Bourns
Original
TCD124AA TCD124AB TCD124AC SAD124AA

BU406

Abstract: BU407 Silicon diffused power transistors bbS3T31 002ÃE27 154 HAPX Product specification BU406/BU407 BU407. , .8 Base-emitter voltage as a function of base current, typical values. vCEsat (VI BU407. Fig , _Product specification Silicon diffused power transistors BU406/BU407 DESCRIPTION High-voltage , voltage peak value; BU406 Vbe = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 200 V BU407 150 V VoE». collector-emitter saturation voltage 1 V >0 collector current DC
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OCR Scan
transistor BU406 bu406 ru 8U407 BU406/BU407 MEB012 MSA060

BU406

Abstract: bu407 BU406, BU407 NPN SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power Innovations Limited, UK , otherwise noted) RATING Collector-base voltage ( lE = 0) BU406 BU407 BU406 BU407 BU406 BU407 V CEO V CEX , all parameters. BU406, BU407 NPN SILICON POWER TRANSISTORS AUG UST 1978 - REVISED MARCH 1997 , A lB = 0 > O MIN 140 BU406 BU407 BU406 BU407 TYP MAX UNIT V breakdown voltage 5 , C Û > II LU C Û > II LU C Û O O Tc Tc = = 150°C 150°C BU406 BU407 Em itter cut-off
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OCR Scan
Y parameters of transistors T0-220

bu406

Abstract: PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , =100mA, IB=0 BU406 ICES VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406 BU407 Collector Cut off Current TEST CONDITION Tc=150ºC VCE=250V, VBE , Limited Data Sheet BU406 BU407 MIN MAX UNIT V 200 150 5.0 5.0 0.1 0.1 V mA
Continental Device India
Original
C-120 281102E

BU406

Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , Operating junction temperature range Storage temperature range NOTE SYM B O L BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX V CEO VALUE 400 330 400 330 200 150 UNIT V V V VEB , , BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless , VBE = 0 BU407 5 5 Collector-emitter VCE = 250 V VBE = 0 BU406 0.1 cut-off
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Original

regulator 4468

Abstract: transistor BU406 Philips Semiconductors ^^ | | Product specification Silicon diffused power transistors BU406/BU407 BU407. , 0.1 1 10 IC 100 BU407. IC/1B = 10;T, = 25 o C. Fig , , motor control systems, etc, PINNING BU406/BU407 T- // QUICK REFERENCE DATA PIN DESCRIPTION 1 , peak value; BU406 VB6 = 0 400 V BU407 330 V VcEO collector-emitter voltage open base BU406 20Q V BU407 150 V VcEsai collector-emitter saturation voltage* 1 V lo collector current DC-value
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OCR Scan
regulator 4468 Transistor 80139 flyback transformer philips 12vk DU406

BU407

Abstract: BU406G TOâ'220AB (Pbâ'Free) 50 Units / Rail BU407 TOâ'220AB 50 Units / Rail BU407G , BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collectorâ'Emitter Voltage BU406 BU407 VCEO 200 150 Vdc Collectorâ'Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collectorâ'Base Voltage BU406 BU407 VCBO 400 330 Vdc VEBO , VOLTAGE (VOLTS) TC = 25°C 200 BU407 BU406 0.1 BONDING WIRE LIMIT THERMAL LIMIT SECOND
ON Semiconductor
Original
BU406/D

BU406

Abstract: BU407 SavantIC Semiconductor Product Specification BU406 BU407 Silicon NPN Power Transistors , base BU407 VEBO V 330 BU406 Collector-emitter voltage Emitter-base voltage UNIT 400 Open emitter BU407 VCEO VALUE V 150 Open collector 6 V IC Collector current , BU407 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL , . MAX UNIT 200 IC=100mA ; IB=0 BU407 V 150 VCEsat Collector-emitter saturation
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Original

BU406

Abstract: BU407 , BU407 N-P-N SILICON POWER TRANSISTORS T-S3-U OCTOBER 1982 - REVISED OCTOBER 1984 â'¢ 60 Wat 25°C Case , °C case temperature (unless otherwise noted) BU406 BU407 Collector-base voltage 400 V 330 V , |flTbl7Bt: DQ3titi3ti 5 iNSTR (OPTDT BU406, BU407 N-P-N SILICON POWER TRANSISTORS 62C 36636 D T , , vbe = o, tc=150°c 1 VCE = 330 V, VBE = o bu407 5 VCE = 200 V, VBE = o 0.1 VCE = 200 V, Vbe , '¢ DALLAS. TEXAS 75265 TEXAS INSTR -COPTO} ^ »E |äc]t317at, D03titi37 4 62C 36637 D BU406, BU407
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OCR Scan
N-P-N SILICON POWER TRANSISTORS t317 texas transistors 110-D T-33-/ T-33-//

BU406G

Abstract: transistor BU406 ) 50 Units / Rail BU407 TO-220AB 50 Units / Rail BU407G TO-220AB (Pb-Free) 50 Units , BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Collector-Emitter Voltage Rating BU406 BU407 VCEO 200 150 Vdc Collector-Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector-Base Voltage BU406 BU407 VCBO 400 330 Vdc , 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC = 25°C 200 BU407 BU406 0.1
ON Semiconductor
Original
Abstract: Current Collector-Emitter Saturation Voltage : BU407 : BU407H Base-Emitter Saturation Voltage : BU407 : BU407H Current Gain Bandwidth Product Turn OFF Time : BU407 : BU407H VBE(sat) fT tOFF ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU407/407H Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU407/407H Package , BU407/407H BU407/407H High Voltage Switching · Use In Horizontal Deflection Output Stage 1 Fairchild Semiconductor
Original
BU407/407H

BU407

Abstract: 1462, TRANSISTOR BU406- BU407- 5 1 2 5 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) There are two , Voltage - VCEV = 330 V (Min.) - BU407 = 400 V (Min.) - BU406 * Low Saturation Voltage VCEJsafl=10V(Max) @'c=5 0A * Fast Switching Speed: tf=0.75 us (Max) MAXIMUM RATINGS NPN BU406 BU407 Characteristic Symbol BU406 BU407 Unit Collector-Emitter Voltage VcEO 200 150 V Collector-Emitter Voltage VcEV 400 330 , 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90 BU406, BU407 NPN ELECTRICAL CHARACTERISTICS
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OCR Scan
1462, TRANSISTOR
Abstract: v CE$at (V ) I" 7 0,8 °0,1 1 1 0 ,c(A) 100 BU407. IC/IB = 10; Tj = 25 , Product specification Silicon diffused power transistors DESCRIPTION BU406/BU407 QUICK , collector-emitter saturation voltage 1 V peak value; VB = 0 £ BU407 base 2 V 330 BU407 DESCRIPTION 400 BU406 PINNING PIN UNIT BU406 VcESM MAX , 0023223 5CH « A P X tRE J > Product specification Philips Semiconductors BU406/BU407 -
OCR Scan
MBB012 S3T31 7Z94472 S3131

transistor TIP31

Abstract: TIP32 applications BU406, BU407 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK q , voltage (V BE = -2 V) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 BU406 BU407 VCEX VCEO 400 330 400 330 200 150 UNIT V V V VEB Peak collector current , BU406, BU407 NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical , VBE = 0 BU406 V CE = 330 V ICES VBE = 0 BU407 5 Collector-emitter V CE = 250 V
Power Innovations
Original
transistor TIP31 TIP32 applications 2N5337 2N6191 BY205 TIP31
Abstract: BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak , current BU407 V CBO E T E L O S B O Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) SYMBOL BU406 BU407 BU406 BU407 VCEX V CEO VEB IC VALUE , subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS electrical , 400 V V CE(sat) VBE(sat) ft Cob BU407 5 Collector-emitter VCE = 250 V VBE = 0 Bourns
Original

BU407

Abstract: transistor BU406 BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS , VCE = 400 V VCE(sat) VBE(sat) ft Cob BU407 5 Collector-emitter VCE = 250 V VBE =
Bourns
Original
TIP32
Abstract: Saturation Voltage: VQE(sat) = 1 V (max) @ 5 A Packaged in Compact JEDEC T O -220A B BU406 BU407 7 , VCEO VCEV VCBO Vebo ic BU406 200 400 400 6 7 10 15 4 60 0.48 BU407 150 330 330 Unit Vdc Vdc , EB = 6 Vdc, Iq = 0) BU406, BU407 'e b o BU406 BU407 v CEO(sus) 200 150 - - Vdc Symbol Min , (continued) REV 2 © M otorola, Inc. 1995 ($ J M O T O R O L A BU406 BU407 ELECTRICAL , Operating Area 2 Motorola Bipolar Power Transistor Device Data BU406 BU407 PACKAGE DIMENSIONS N -
OCR Scan

BU406

Abstract: BU407 -Thermally limited DC S BU406- BU407- 5 1 2 5 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE , Voltage - VCEV = 330 V (Min.) - BU407 = 400 V (Min.)-BU406 * Low Saturation Voltage VCEJsafl=10V(Max , ://www.bocasemi.com NPN BU406 BU407 Characteristic Symbol BU406 BU407 Unit Collector-Emitter Voltage VcEO 200 150 V , 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90 BU406, BU407 NPN ELECTRICAL CHARACTERISTICS , Collector - Emitter Sustaining Voltage (1) (lc = 100 mA, lB = 0) BU406 BU407 VCEO(SUS) 200 150 V Collector
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OCR Scan
HI SPEED, HI CURRENT, TO-220, TRANSISTOR

BU406

Abstract: 2N5337 BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A , ) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage BU406 BU407 BU406 BU407 BU406 BU407 V CBO VCEX VCEO VALUE 400 330 400 330 200 150 UNIT V V V , Specifications are subject to change without notice. 1 BU406, BU407 NPN SILICON POWER TRANSISTORS , VCE = 400 V VCE(sat) VBE(sat) ft Cob BU407 5 Collector-emitter VCE = 250 V VBE =
Bourns
Original
to220 5 lead plastic

BU407

Abstract: transistor BU406 PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages , Voltage BU406 BU407 UNIT 200 150 V Collector Base Voltage VCBO 400 330 V , VCE=400V, VBE=0 VCE=330V, VBE=0 VCE=250V, VBE=0 VCE=200V, VBE=0 BU407 BU406 BU407 BU406 BU407 Tc=150ºC VCE=250V, VBE=0 VCE=200V, VBE=0 BU406 BU407 Collector Cut off Current TEST , Sheet Page 1 of 4 PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package
Continental Device India
Original
IC7A

BU40x

Abstract: BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for , Storage Junction Temperature Storage BU406 BU407 BU406 BU407 BU406 BU407 Symbol VCEO VCEV VCBO VEBO IC , ORDERING INFORMATION Device BU406 BU406G BU407 BU407G *For additional information on our Pb-Free strategy , ) (IC = 100 mAdc, IB = 0) BU406 BU407 VCEO(sus) ICES Collector Cutoff Current (VCE = Rated VCEV, VBE = 0 , Current (VEB = 6 Vdc, IC = 0) mAdc 5 0.1 1 1 BU406, BU407 IEBO mAdc ON CHARACTERISTICS (Note 1
ON Semiconductor
Original
BU40x
Showing first 20 results.