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BSS84,215 Nexperia BSS84 - P-channel vertical D-MOS logic level FET TO-236 3-Pin visit Digikey Buy
BSS84LT1G ON Semiconductor Small Signal MOSFET -50V -130mA 10 Ohm Single P-Channel SOT-23 Logic Level, SOT-23 (TO-236) 3 LEAD, 3000-REEL visit Digikey Buy
BSS84AK,215 Nexperia BSS84AK - 50 V, 180 mA P-channel Trench MOSFET TO-236 3-Pin visit Digikey Buy
BSS84W-7-F Diodes Incorporated Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 visit Digikey Buy
BSS84AKVL Nexperia BSS84AK - 50 V, 180 mA P-channel Trench MOSFET TO-236 3-Pin visit Digikey
BSS8402DWQ-7 Diodes Incorporated Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 visit Digikey Buy

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Part : BSS84 Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 29,233 Best Price : $0.0248 Price Each : $0.0427
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Part : BSS8402DW-7-F Supplier : Diodes Manufacturer : TME Electronic Components Stock : 2,383 Best Price : $0.1160 Price Each : $0.1927
Part : BSS84AK.215 Supplier : Nexperia Manufacturer : TME Electronic Components Stock : 6,115 Best Price : $0.0240 Price Each : $0.0637
Part : BSS84AKS.115 Supplier : Nexperia Manufacturer : TME Electronic Components Stock : 2,595 Best Price : $0.0826 Price Each : $0.1239
Part : BSS84AKW.115 Supplier : Nexperia Manufacturer : TME Electronic Components Stock : 5,910 Best Price : $0.0321 Price Each : $0.0641
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Part : BSS84,215 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : 36,000 Best Price : $0.03 Price Each : $0.0420
Part : BSS84,215 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : 28,272 Best Price : $0.05 Price Each : $0.4530
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Part : BSS84 Supplier : Fairchild Semiconductor Manufacturer : Farnell element14 Stock : 137,160 Best Price : £0.0315 Price Each : £0.1570
Part : BSS84,215 Supplier : Nexperia Manufacturer : Farnell element14 Stock : 36,000 Best Price : £0.0366 Price Each : £0.0458
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Part : BSS84-7-F Supplier : Diodes Manufacturer : Farnell element14 Stock : 3,298 Best Price : £0.0332 Price Each : £0.33
Part : BSS8402DW-7-F Supplier : Diodes Manufacturer : Farnell element14 Stock : 13,542 Best Price : £0.1760 Price Each : £0.48
Part : BSS84AK Supplier : Nexperia Manufacturer : Farnell element14 Stock : 22,777 Best Price : £0.0417 Price Each : £0.7890
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Part : BSS84-7-F Supplier : Diodes Manufacturer : New Advantage Stock : 1,050,000 Best Price : $0.04 Price Each : $0.04
Part : BSS8402DW-7-F Supplier : Diodes Manufacturer : New Advantage Stock : 60,000 Best Price : $0.12 Price Each : $0.18
Part : BSS84AK,215 Supplier : Nexperia Manufacturer : New Advantage Stock : 258,000 Best Price : $0.03 Price Each : $0.04
Part : BSS84AKM,315 Supplier : Nexperia Manufacturer : New Advantage Stock : 160,000 Best Price : $0.07 Price Each : $0.07
Part : BSS84PWH6327 Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 100 Best Price : $0.04 Price Each : $0.05
Part : BSS84PWL6327XT Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 500 Best Price : $0.05 Price Each : $0.06
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BSS84 Datasheet

Part Manufacturer Description PDF Type
BSS84 Diodes P-CHANNEL ENHANCEMENT MODE MOSFET Original
BSS84 Diodes TRANS MOSFET P-CH 50V 0.13A 3SOT-23 Original
BSS84 Diodes P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original
BSS84 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
BSS84 Fairchild Semiconductor TRANS MOSFET P-CH 50V 0.13A 3SOT-23 T/R Original
BSS84 Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original
BSS84 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 50V 130MA SOT-23 Original
BSS84 Kexin P-Channel Enhancement Mode MOSFET Original
BSS84 NXP Semiconductors BSS84 - P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.13 A; RDS(on): 10000@10V mOhm; VDSmax: 50 V Original
BSS84 On Semiconductor TRANS MOSFET P-CH 50V 0.1A 3SOT-23 T/R Original
BSS84 PanJit Semiconductors P-CHANNEL ENHANCEMENT MODE MOSFET Original
BSS84 Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor Original
BSS84 Philips Semiconductors P-Channel Enhancement Mode Vertical D-MOS FET Original
BSS84 Siemens SIPMOS Small-Signal Transistor Original
BSS84 Siemens Original
BSS84 Siemens SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) Original
BSS84 Toshiba Power MOSFETs Cross Reference Guide Original
BSS84 Weitron Small Signal MOSFET P-Channel Original
BSS84 Zetex Semiconductors SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original
BSS84 Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan
Showing first 20 results.

BSS84

Catalog Datasheet MFG & Type PDF Document Tags

BSS84

Abstract: BSS84 nxp Supersedes BSS84_6 20081216 Product data sheet - BSS84_5 Modifications: · Table 5 "Limiting values": Ptot figure reference updated BSS84_5 20081209 Product data sheet - BSS84_4 BSS84_4 20070717 Product data sheet - BSS84_3 BSS84_3 20030804 Product specification - BSS84_2 BSS84_2 19970618 Product specification - BSS84_1 BSS84_1 , * = t: made in Malaysia * = W: made in China BSS84_6 Product data sheet © NXP B.V. 2008. All
NXP Semiconductors
Original
BSS84 nxp TRANSISTOR SMD MARKING CODES marking code DG SMD Transistor BSS84 marking BSS84/DG

BSS84 MARKING CODE

Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 Supersedes BSS84_5 20081209 Product data sheet - BSS84_4 Modifications: · · · · , 11 "Legal information": updated BSS84_4 20070717 Product data sheet - BSS84_3 BSS84_3 , BSS84_1 BSS84_1 19950407 Product specification - - BSS84_5 Product data sheet , * = t: made in Malaysia * = W: made in China BSS84_5 Product data sheet © NXP B.V. 2008. All , as a function of drain-source voltage BSS84_5 Product data sheet © NXP B.V. 2008. All rights
NXP Semiconductors
Original
BSS84 MARKING CODE TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODE A1 BSS84 Equivalent

BSS84

Abstract: BSS110 FAIRCHILD MICDNDUCTÃR i May 1999 BSS84 / BSS110 P -Channel Enhancement Mode Field Effect , low current high side switch. Features BSS84: -0.13A, -50V. RDS(ON) BSS110: -0.17A, -50V. FL=,â"¢ = , TA = 25°C unless otherwise noted Symbol Parameter BSS84 BSS110 Units VDSS Drain-Source Voltage , Semiconductor Corporation BSS84 Rsv. C1 / BSS110. Rev. A2 This Material Copyrighted By Its Respective , All -0.8 -1.75 -2 v D DS(ON) Static Drain-Source On-Resistance VGS = -5V, Id = -0.10 A BSS84 3.2 10
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OCR Scan

BSS84 P

Abstract: BSS84 Change notice Supersedes BSS84_4 20070717 Product data sheet - BSS84_3 · The , - BSS84_2 BSS84_2 (9397 750 02333) 19970618 Product specification - BSS84_1 BSS84_1 19950407 Product specification - - BSS84_4 Product data sheet © NXP B.V , voltage BSS84_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 - 17 July , BSS84_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 - 17 July 2007 3
NXP Semiconductors
Original
BSS84 P GSOT-23

BSS84 Equivalent

Abstract: BSS84Q-7-F Information (Note 3) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Qualification , BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -50V RDS(on) max 10 @ VGS = , Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D BSS84 Document number: DS30149 Rev. 16 - 2 1 of 5 www.diodes.com February 2012 © Diodes Incorporated BSS84 , subject to production testing BSS84 Document number: DS30149 Rev. 16 - 2 2 of 5 www.diodes.com
Diodes
Original
K84 SOT23 BSS84Q AEC-Q101 J-STD-020 MIL-STD-202 3000/T 10000/T 2002/95/EC
Abstract: BSS84 - P-Channel Enhancement Mode Field-Effect Transistor February 2013 BSS84 P-Channel , provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of , Ordering Information Device Marking SP Device BSS84 Reel Size 7'' Tape width 8mm Quantity 3000 © 2002 Fairchild Semiconductor Corporation BSS84 · Rev. 1.1.0 www.fairchildsemi.com BSS84 - P-Channel Enhancement Mode Field-Effect Transistor Electrical Characteristics(2) Symbol Off Fairchild Semiconductor
Original

bss110

Abstract: 017adc PAIRCHII-D June 1995 M ICDNDUCTQ R t m BSS84/ BSS110 P-Channel Enhancement Mode Field Effect , low current high side switch. Features BSS84: -0.13A, -50V. RD S (0N ) : : 10£2 @ VG S = -10V. , °C unless otherw ise noted BSS84 -50 -50 ±20 -0.13 -0.52 0.36 -55 to 150 300 BSS110 Units V V V , , Junction-to-Ambient 350 200 °c/w ©1 9 9 7 Fairchild Sem iconductor Corporation BSS84 Rev. B / B S S 110. Rev , = -0.13 A VG S= -10 V, lD= -0.17 A All BSS84 BSS110 BSS84 BSS110 -0.8 -1.75 2.3 2.2 -2 10 10
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OCR Scan
017adc BSS84/

bss84

Abstract: marking BSs sot23 siemens -0.8.-2.0 V BSS84 Pin 1 G Type BSS84 Type BSS84 BSS84 Vos -50 V b -0.13 A W DS(on) 10Q Package SOT , \ 7"stg ^thJA Values -55. + 150 -55. + 150 , 9fs 0.05 Qss _ 30 40 0.085 . Values typ. max. BSS84 Unit S pF ns Semiconductor Group , ) parameter: l/G S > -10 V BSS84 o 20 40 oe æ 100 120 °c ieo - Safe , /(^Ds) parameter: fp = 80 BSS84 Typ. drain-source on-resistance ^D S (on) " /js , 7] = 25
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OCR Scan
marking BSs sot23 siemens BSS84 E6327 Q62702-S568 Q67000-S243 E6327 E6433
Abstract: Source Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Compliance Standard Automotive Standard Automotive , BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 10 @ VGS , 1999 K Feb 2 BSS84 Document number: DS30149 Rev. 18 - 2 2000 L M Y 84 Shanghai A/T , July 2013 © Diodes Incorporated BSS84 Maximum Ratings (@TA = +25°C, unless otherwise Diodes
Original
Abstract: F /M R C H II-D May 1999 MICONDUCTQR i BSS84 / BSS110 P -Channel Enhancement Mode Field , voltage applications requiring a low current high side switch. BSS84: -0.13A, -50V. R,DS(ON) BSS110 , °C PD Maximum Power Dissipation ^DG R BSS84 -Pulsed T j â'™"I" s t G Tl @ T a = 25 , Vgs = -5V Id = -0.10 A BSS84 3.2 10 VG = -1 0 V lD= -0.17 A S bsS R BSS110 2.2 , VD = -25 V, lD= -0.10A S Forward Transconductance BSS84 0.05 0.27 VD = -10 V, lD -
OCR Scan

bss84

Abstract: TRANSISTOR SMD MARKING CODE A1 transistor 10. Revision history Table 8. BSS84_6 Modifications: BSS84_5 BSS84_4 BSS84_3 BSS84_2 BSS84_1 , BSS84_4 BSS84_3 BSS84_2 BSS84_1 Document ID · Table 5 "Limiting values": Ptot figure reference , : BSS84_6 Mouser Electronics Related Product Links 771-BSS84-T/R - NXP BSS84,215 NXP , Marking code[2] 13* ZV* Type number[1] BSS84_6 © NXP B.V. 2008. All rights reserved. Product , . Safe operating area; continuous and peak drain currents as a function of drain-source voltage BSS84_6
NXP Semiconductors
Original
771-BSS84-T/R

SOT-23 marking K84

Abstract: transistor k84 3 www.diodes.com BSS84 Ordering Information Device BSS84-7 Notes: (Note 3) Packaging SOT , "-F" suffix to part number above. Example: BSS84-7-F. Marking Information K84 Date Code Key Year , SPICE MODEL: BSS84 BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · , 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID Pd RqJA Tj, TSTG BSS84 -50 -50 ±20 -130 300 , . Drain Source Voltage DS30149 Rev. 7 - 2 2 of 3 www.diodes.com BSS84 -1.0 10 9 -0.8 ID
Diodes
Original
SOT-23 marking K84 transistor k84 bss84 k84 J-STD-020A
Abstract: Information (Note 3) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Qualification , BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary â'¢ â'¢ â , Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 BSS84 Document number , March 2012 © Diodes Incorporated BSS84 Maximum Ratings @TA = 25°C unless otherwise specified , minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing BSS84 Diodes
Original

BSS84

Abstract: ROB SOT23 National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect , low current high side switch. Features â  BSS84: -0.13A, -50V. RDS(0NI = 10i2 @ VGS = -10V. BSS110 , Maximum Ratings SOT-23 (TO-236AB) BSS84 : 25°C unless otherwise noted Symbol Parameter BSS84 BSS110 , '¢0.8 -1.75 -2 V ^oaoNi Static Drain-Source On-Resistance Vas = -10V. ID = -0.13 A BSS84 2.3 10 n VGS = -10V, lD = -0.17A BSS110 2.2 10 Qfs Forward Transconductance Vps= -10 V, lD = -0.13A BSS84 0.05 0.27
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OCR Scan
ROB SOT23 0Q401

BSS84 MARKING CODE

Abstract: bss84 www.diodes.com BSS84 Ordering Information Device BSS84-7 Notes: (Note 3) Packaging SOT-23 Shipping , BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT SPICE MODEL: BSS84 TRANSISTOR Features · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input , TA = 25°C unless otherwise specified BSS84 -50 -50 ±20 -130 300 417 -55 to +150 Units V V V mA mW °C , 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30149 Rev. 5 - 2 2 of 2 www.diodes.com YM BSS84
Diodes
Original
p-channel SOT-23 K84 marking "td" sot23 2N7002 AP02001

bss84 spice

Abstract: transistor k84 to minimize self-heating effect. DS30149 Rev. 6 - 2 1 of 3 www.diodes.com BSS84 Ordering Information (Note 3) Device Shipping BSS84-7 Notes: Packaging SOT-23 3000/Tape , part number above. Example: BSS84-7-F. Marking Information YM K84 = Product Type Marking Code , BSS84 SPICE MODEL: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · , otherwise specified Symbol BSS84 Units Drain-Source Voltage VDSS -50 V Drain-Gate
Diodes
Original
bss84 spice marking code 27a K84 MARKING

BSS84 marking

Abstract: BSS84 BSS84 P-Channel Enhancement Mode Field Effect Transistor General Description Features These , width Quantity SP BSS84 7'' 8mm 3000 units 2002 Fairchild Semiconductor Corporation BSS84 Rev B(W) BSS84 July 2002 Symbol Parameter TA = 25°C unless otherwise noted Test , . Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% BSS84 Rev B(W) BSS84 Electrical Characteristics BSS84 Typical Characteristics 1 2 -4.5V
Fairchild Semiconductor
Original
Abstract: Source Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Compliance Standard Automotive Standard Automotive , BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 10 @ VGS , '//www.diodes.com/products/packages.html. 84 84 Month Code 1998 J Jan 1 1999 K Feb 2 BSS84 , July 2013 © Diodes Incorporated BSS84 Maximum Ratings (@TA = +25°C, unless otherwise Diodes
Original
Abstract: Information (Note 4) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Qualification , BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -50V RDS(on) max 10 @ VGS = , Apr 4 2003 P May 5 BSS84 Document number: DS30149 Rev. 18 - 2 YM K84 YM 1 of 5 www.diodes.com February 2013 © Diodes Incorporated BSS84 Maximum Ratings (@TA = +25°C, unless , minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing BSS84 Document Diodes
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2011/65/EU

BSS110

Abstract: BSS84 May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description , side switch. BSS84: -0.13A, -50V. RDS(ON) = 10 @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10 @ , . S G BSS110 D (TO-236AB) BSS84 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter BSS84 BSS110 Units VDSS Drain-Source Voltage -50 , /W BSS84 Rev. C2 / BSS110. Rev. A3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
Fairchild Semiconductor
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marking YBs sot-23

Abstract: bss84 BSS84 - P-Channel Enhancement Mode Field-Effect Transistor February 2013 BSS84 P-Channel , provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of , Ordering Information Device Marking SP Device BSS84 Reel Size 7'' Tape width 8mm Quantity 3000 © 2002 Fairchild Semiconductor Corporation BSS84 · Rev. 1.1.0 www.fairchildsemi.com BSS84 - P-Channel Enhancement Mode Field-Effect Transistor Electrical Characteristics(2) Symbol Off
Infineon Technologies
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L6327 marking YBs sot-23 bss84p ybs marking YBs 70 YBs sot-23 PG-SOT-23 L6433 VPS05161

smd marking code ybs

Abstract: q67041-s1417 BSS84 P-channel enhancement mode vertical D-MOS transistor Rev. 04 - 17 July 2007 Product , 001aaa025 BSS84 NXP Semiconductors P-channel enhancement mode vertical D-MOS transistor 3 , -236AB BSS84 Description plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 3 , voltage BSS84_4 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 04 - 17 July 2007 2 of 11 BSS84 NXP Semiconductors P-channel enhancement mode vertical D-MOS transistor
Infineon Technologies
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SP000082879 smd marking code ybs q67041-s1417 BSS84P E6327 YBs 98 Q67041-S1417

smd marking code YBs SOT-23

Abstract: Q67041-S1417 -0.8.-2.0 V BSS84 Pin 1 G Type BSS84 Type BSS84 BSS84 Vos -50 V b -0.13 A W DS(on) 10Q Package SOT , \ 7"stg ^thJA Values -55. + 150 -55. + 150 , 9fs 0.05 Qss _ 30 40 0.085 . Values typ. max. BSS84 Unit S pF ns Semiconductor Group , ) parameter: l/G S > -10 V BSS84 o 20 40 oe æ 100 120 °c ieo - Safe , /(^Ds) parameter: fp = 80 BSS84 Typ. drain-source on-resistance ^D S (on) " /js , 7] = 25
Infineon Technologies
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smd marking code YBs SOT-23

bss84p

Abstract: FAIRCHILD MICDNDUCTÃR i May 1999 BSS84 / BSS110 P -Channel Enhancement Mode Field Effect , low current high side switch. Features BSS84: -0.13A, -50V. RDS(ON) BSS110: -0.17A, -50V. FL=,â"¢ = , TA = 25°C unless otherwise noted Symbol Parameter BSS84 BSS110 Units VDSS Drain-Source Voltage , Semiconductor Corporation BSS84 Rsv. C1 / BSS110. Rev. A2 This Material Copyrighted By Its Respective , All -0.8 -1.75 -2 v D DS(ON) Static Drain-Source On-Resistance VGS = -5V, Id = -0.10 A BSS84 3.2 10
Infineon Technologies
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BSS84

Abstract: bss84p BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 10 @ VGS , Source Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Compliance Standard Automotive Standard Automotive , 1999 K Feb 2 BSS84 Document number: DS30149 Rev. 18 - 2 2000 L M Y 84 Shanghai A/T , July 2013 © Diodes Incorporated BSS84 Maximum Ratings (@TA = +25°C, unless otherwise
Infineon Technologies
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DIODE WJ SOt23

Abstract: 7.a sot-23 F /M R C H II-D May 1999 MICONDUCTQR i BSS84 / BSS110 P -Channel Enhancement Mode Field , voltage applications requiring a low current high side switch. BSS84: -0.13A, -50V. R,DS(ON) BSS110 , °C PD Maximum Power Dissipation ^DG R BSS84 -Pulsed T j â'™"I" s t G Tl @ T a = 25 , Vgs = -5V Id = -0.10 A BSS84 3.2 10 VG = -1 0 V lD= -0.17 A S bsS R BSS110 2.2 , VD = -25 V, lD= -0.10A S Forward Transconductance BSS84 0.05 0.27 VD = -10 V, lD
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DIODE WJ SOt23 7.a sot-23 marking BSs sot23 62702-S
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