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Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.03 Price Each : $0.0340
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.05 Price Each : $0.26
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Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.0478 Price Each : $0.0483
Part : LBSS123LT1G Supplier : Leshan Radio Company Manufacturer : Avnet Stock : 12,000 Best Price : $0.0137 Price Each : $0.0240
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 27,000 Best Price : $0.0230 Price Each : $0.0230
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : 162 Best Price : $0.0390 Price Each : $0.05
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 190,417 Best Price : $0.05 Price Each : $0.05
Part : BSS123LT1 Supplier : ON Semiconductor Manufacturer : America II Electronics Stock : 1,516 Best Price : - Price Each : -
Part : BSS123LT1 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 970 Best Price : - Price Each : -
Part : BSS123LT1 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 13,947 Best Price : - Price Each : -
Part : BSS123LT1 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 5,840 Best Price : $0.0225 Price Each : $0.1125
Part : BSS123LT1 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 7,640 Best Price : - Price Each : -
Part : BSS123LT1 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 5,269 Best Price : $0.0225 Price Each : $0.1125
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 3,495 Best Price : $0.0405 Price Each : $0.1350
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 4,828 Best Price : - Price Each : -
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 23,630 Best Price : £0.0380 Price Each : £0.0640
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 8,750 Best Price : £0.0380 Price Each : £0.12
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 35,026 Best Price : $0.0226 Price Each : $0.0687
Part : BSS123LT1 Supplier : ON Semiconductor Manufacturer : basicEparts Stock : 2,700 Best Price : - Price Each : -
Part : BSS123LT1 Supplier : - Manufacturer : basicEparts Stock : 100 Best Price : - Price Each : -
Part : BSS123LT1 Supplier : Motorola Manufacturer : ComSIT Stock : 1,170 Best Price : - Price Each : -
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,441 Best Price : $0.05 Price Each : $0.1870
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,441 Best Price : $0.05 Price Each : $0.1870
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 18,000 Best Price : $0.0610 Price Each : $0.0610
Part : BSS123LT1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 18,000 Best Price : £0.0213 Price Each : £0.0281
Part : BSS123LT1G Supplier : ON SEMICONDUCTOR Manufacturer : New Advantage Stock : 267,000 Best Price : - Price Each : -
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BSS123LT1 Datasheet

Part Manufacturer Description PDF Type
BSS123LT1 Motorola TMOS FET Transistor(N-Channel) Original
BSS123LT1 On Semiconductor Power MOSFET 170 mA, 100 V Original
BSS123LT1 On Semiconductor TMOS FET Transistor Original
BSS123LT1 On Semiconductor BSS123 - TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN, FET General Purpose Small Signal Original
BSS123LT1 N/A Shortform Datasheet & Cross References Data Scan
BSS123LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, TMOS FET, N Channel, 100mA, 100V, Pkg Style SOT23 Scan
BSS123LT1/D On Semiconductor CASE 318-08, STYLE 21 SOT-23 (TO-36AB) Original
BSS123LT1D On Semiconductor Power MOSFET 170 mAmps, 100 Volts Original
BSS123LT1-D On Semiconductor Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Original
BSS123LT1G On Semiconductor TMOS FET Transistor Original
BSS123LT1G On Semiconductor BSS123 - TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, CASE 318-08, 3 PIN, FET General Purpose Small Signal Original

BSS123LT1

Catalog Datasheet MFG & Type PDF Document Tags

sot-23 mosfet Marking SA s

Abstract: BSS123LT3 BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N­Channel SOT­23 MAXIMUM , Device Package Shipping BSS123LT1 SOT­23 3000 Tape & Reel BSS123LT3 SOT­23 10,000 , : BSS123LT1/D BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic , %. http://onsemi.com 2 BSS123LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA , +140 BSS123LT1 INFORMATION FOR USING THE SOT­23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED
ON Semiconductor
Original
sot-23 mosfet Marking SA s

BSS123LT1

Abstract: BSS123LT1G BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http , Industries, LLC, 2004 December, 2004 - Rev. 4 1 Publication Order Number: BSS123LT1/D BSS123LT1 , SOT-23 10,000 Tape & Reel SOT-23 (Pb-Free) 10,000 Tape & Reel Device BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G For information on tape and reel specifications, including part , . http://onsemi.com 2 BSS123LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA
ON Semiconductor
Original

BSS123LT1G

Abstract: BSS123LT1 & Reel SOT-23 (Pb-Free) 10,000 Tape & Reel Device BSS123LT1 BSS123LT1G BSS123LT3 , BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 http , , 2005 March, 2005 - Rev. 5 1 Publication Order Number: BSS123LT1/D BSS123LT1 ELECTRICAL , BSS123LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V , . Temperature versus Gate Threshold Voltage http://onsemi.com 3 +140 BSS123LT1 PACKAGE DIMENSIONS
ON Semiconductor
Original
Abstract: , Duty Cycle v 2.0%. VSD - - 1.3 V ORDERING INFORMATION Device BSS123LT1 BSS123LT1G BSS123LT3 , BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Features http , March, 2005 - Rev. 5 1 Publication Order Number: BSS123LT1/D M Maximum ratings are those , . MARKING DIAGRAM 3 SOT-23 CASE 318 STYLE 21 SA BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25 , Brochure, BRD8011/D. http://onsemi.com 2 BSS123LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 I ON Semiconductor
Original

sot-23 mosfet Marking SA s

Abstract: BSS123LT1G -23 (Pb-Free) 10,000 Tape & Reel Device BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G For information , BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Features · , , 2005 1 Publication Order Number: BSS123LT1/D BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25 , and Reel Packaging Specifications Brochure, BRD8011/D. 2 BSS123LT1 PACKAGE DIMENSIONS SOT , Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BSS123LT1/D 4 ON
ON Semiconductor
Original
marking SA sot-23 sot-23 mosfet Marking ak

marking code SA sot-23

Abstract: SOT-23 marking sa BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 MAXIMUM RATINGS , Drain 3 1 2 Gate Source ORDERING INFORMATION Device BSS123LT1 BSS123LT3 Package SOT , Rev. 3 43 Publication Order Number: BSS123LT1/D BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = , , Duty Cycle v 2.0%. - - 1.3 V http://onsemi.com 44 BSS123LT1 TYPICAL ELECTRICAL CHARACTERISTICS , On-Resistance Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 45 BSS123LT1
ON Semiconductor
Original
marking code SA sot-23 SOT-23 marking sa DIODE 8V SOT-23 SOT-23 9v

CD4053BCM

Abstract: C0805C224K4RAC BSS123LT1 R9 75k0 10k 2 10k 2 PGOOD Q7 BSS123LT1 GREEN 1 CR1 LXA3025IGC-TR R23 680R 5V R16 10k 1 Q5 BSS123LT1 R8 105k 1 2 R15 10k RED 1 1 1 , VCC 1 11 R48 1K Q11 BSS123LT1 2 100us_1 R Q TR GND U8 ICM7555CBA , 1 2 1 Q9 BSS123LT1 2 1 5 6 7 R33 9K09 R30 110K C23 1 10nF 50V , LM4041-ADJ C41 1n 50V U14 5 FB Q13 BSS123LT1 1 CPU_EN R54 0R D5 NOP 2 R55
Intersil
Original
ISL6211 CD4053BCM C0805C224K4RAC 6.8R 1 panasonic engine speed control lm358 pin diagram of crusoe processor pin diagram of crusoe processor with description AN9989 PA1707 FN9043 ISO9000

BSS123LT1

Abstract: MOTOROLA Order this document by BSS123LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N­Channel 3 DRAIN ® Motorola Preferred Device 1 GATE 3 2 SOURCE , +150 °C Junction and Storage Temperature DEVICE MARKING BSS123LT1 = SA ELECTRICAL , Diodes Device Data © Motorola, Inc. 1997 1 BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25 , Small­Signal Transistors, FETs and Diodes Device Data + 140 BSS123LT1 INFORMATION FOR USING THE SOT
Motorola
Original
236AB
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS123LT1/D TM OS FET Transistor N-Channel 3 DRAIN BSS123LT1 Motorola Preferred Device 2 SOURCE MAXIMUM RATINGS Rating , °C DEVICE MARKING BSS123LT1 = S A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , best overall value. REV 2 MOTOROLA © Motorola, Inc. 1997 BSS123LT1 ELECTRICAL , Diodes Device Data BSS123LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM -
OCR Scan
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h annel 3 DRAIN Motorola Preferred Device 2 SOURCE 1 MAXIMUM RATINGS 2 Symbol Value Unit Drain-Source Voltage Vd SS 100 Vdc Gate-Source Voltage â'" Continuous â'" Non-repetitive (tp < 50 , BSS123LT1 = SA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ ,   - Motorola S m all-S ignal Transistors, FETs and Diodes Device Data BSS123LT1 ELECTRICAL -
OCR Scan
Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N -C h an n el 3 DRAIN BSS123LT1 Motorola Preferred Device 2 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage G ate-Source Voltage - Continuous - N on-repetitive (tp < 50 ^s) Drain Current C ontinuous^) Pulsed(2) 1 Symbol VDSS % 2 Value 100 Unit Vdc CASE 318-08, STYLE 21 SOT-23 (TO-236AB) Vg s vgsm ±20 , +150 DEVICE MARKING BSS123LT1 = SA ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted -
OCR Scan
1253C SS123LT1

JSs sot23

Abstract: BSS123LT1* M A X IM U M R A TIN G S Rating Drain-Source Voltage Gate-Source Voltage - Continuous - Non-repetitive (tp « 50 ¿ts) Drain Current Continuous (1) Pulsed (2) TH ER M A L C H A R A C T E R IS T IC S Characteristic Total Device Dissipation FR-5 Board,* TA - 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature ·F R -5 = 1.0 x 0 .7 5 x 0.0 62 in , Tstg 556 -55 to +150 D E V IC E M ARKIN G BSS123LT1 = SA E L E C T R IC A L C H A R A C T E R IS
-
OCR Scan
JSs sot23 2N7000
Abstract: BSS123LT1* M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e D ra in C u rre n t C o n tin u o u s 11) P u ls e d \2) 'd 'd m 0 .1 7 0 .6 8 CASE 318-07, STYLE 21 SOT-23 (TO-236AB) Symbol VDSS Vg s Value 100 r 35 Unit Vdc Vdc Ade TH ERM A L CH A RA C TERISTICS Characteristic T o ta l D e v ic e D is s ip a tio n F R -5 B o a r d / T A = 25 , DEVICE MARKING BSS123LT1 = 5A ELE C TRIC A L CHAR A CTER ISTICS OFF CH ARACTERISTICS D r a in - S o -
OCR Scan

t6661

Abstract: ft960 SMALL-SIGNAL TMOS MOSFETs (continued) CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 - Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 - TO-236AB (SOT-23) - N-Channel Pinout: 1-Gate, 2-Source, 3-Drain m^oB) · to Device MMBF170LT1 BSS123LT1 2N7002LT1 VGS(th) Voss 60 100 60 Switching Time V Max 3 28 2.5 Marking 6Z SA 702 Ohm 5 6 7.5 mA 200 100 500 V Min 0.8 0.8 1
-
OCR Scan
t6661 ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 6z sot223 marking MMFT107T1 FT960T1 MMFT6661T1 FT960 T6661

BSS123LT1G

Abstract: . 6 1 Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G ELECTRICAL , BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Features http , , Duty Cycle v 2.0%. VSD - - 1.3 V ORDERING INFORMATION Device BSS123LT1G BSS123LT3G BVSS123LT1G , ://onsemi.com 2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 I D, DRAIN CURRENT , BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
ON Semiconductor
Original
AEC-Q101

702 sot23

Abstract: SOT-23 TRANSISTORS (continued) TMOS FETs The following is a listing of small-signal surface mount TMOS FETs which exhibit low Pinout: 1-Gate, 2-Source, 3-Drain R DS(on) @ I d V GS(th) Ros(on) characteristics. Switching Time Device Marking Ohm mA BVqss Volts Min Volts Max ton ns to ffis Style N-CHANNEL MMBF170LT1 BSS123LT1 2N7002LT1 6Z SA 702 5.0 6.0 7.5 200 100 500 60 100 60 0.8 0.8 1.0 3.0 2.8 2.5 10 20 20 10 40 20 21 21 21 See Packaging Information under Technical
-
OCR Scan
Abstract: Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G ELECTRICAL CHARACTERISTICS (TA = 25 , BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts Nâ'Channel SOTâ'23 http , '  BSS123LT1G SOTâ'23 (Pbâ'Free) 3000 / Tape & Reel BSS123LT3G SOTâ'23 (Pbâ'Free) 10000 , . http://onsemi.com 2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS 1.6 1.6 ID , BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 1 0 V ≤ VGS â ON Semiconductor
Original
Abstract: Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G ELECTRICAL CHARACTERISTICS (TA = 25Â , BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts Nâ'Channel SOTâ'23 http , Cycle v 2.0%. ORDERING INFORMATION Package Shippingâ'  BSS123LT1G SOTâ'23 (Pbâ'Free , , BRD8011/D. http://onsemi.com 2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS 1.0 , Forward Biased Safe Operating Area http://onsemi.com 3 1000 +â'140 BSS123LT1G, BVSS123LT1G ON Semiconductor
Original
Abstract: Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G ELECTRICAL CHARACTERISTICS (TA = 25 , BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Features http , , Duty Cycle v 2.0%. VSD - - 1.3 V ORDERING INFORMATION Device BSS123LT1G BSS123LT3G BVSS123LT1G , ; AEC-Q101 Qualified and PPAP Capable. http://onsemi.com 2 BSS123LT1G, BVSS123LT1G TYPICAL , BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE ON Semiconductor
Original
Abstract: 1 Publication Order Number: BSS123LT1/D BSS123LT1G, BVSS123LT1G ELECTRICAL CHARACTERISTICS , BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Features http , , Duty Cycle v 2.0%. VSD - - 1.3 V ORDERING INFORMATION Device BSS123LT1G BSS123LT3G BVSS123LT1G , ://onsemi.com 2 BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 I D, DRAIN CURRENT , BSS123LT1G, BVSS123LT1G TYPICAL ELECTRICAL CHARACTERISTICS r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE ON Semiconductor
Original

BC237

Abstract: 2N3819 junction fet MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N­Channel 3 DRAIN 1 GATE 2 SOURCE BSS123LT1 Motorola Preferred Device ® MAXIMUM RATINGS Rating Drain­Source Voltage Gate­Source Voltage - Continuous - Non­repetitive (tp 50 µs) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS , Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 ­ 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING BSS123LT1 = , Transistors, FETs and Diodes Device Data BSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
ON Semiconductor
Original
BC237 2N3819 junction fet MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1

CAPacitor 10U 50V 1206

Abstract: C1206X7R100475KNE BSS123LT1 PG1 J10 GND J9 PGOOD1 J13 Q2 BSS123LT1 PG2 INTERSIL Title ISL6225
Intersil
Original
ISL6225EVAL2 AN1058 ISL6225CA FDS6912A CAPacitor 10U 50V 1206 C1206X7R100475KNE CAP 10U 50V Kemet SMD CAPACITOR mosfet for power electronic ECJ-2YB1E154K SSL-LXA3025IGC

ISL6225

Abstract: C1206X7R100475KNE PG1 J10 GND J9 J13 Q2 BSS123LT1 PG2 PGOOD2 PGOOD1 Building 2A, Suite 105 , BSS123LT1 + C15 CR2 LXA3025IGC-TR 2 ISL6225 EVALUATION BOARD (DUAL SWITCHER) Document Number
Intersil
Original
TMK432BJ106MM-T BAT54WT1 ISL6225CA-T SSOP-28 n-channel 250V power mosfet smd cdrh1 BAT54WT1-T SPC02SYAN BSS123LT1-T
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