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BSR14 Datasheet

Part Manufacturer Description PDF Type
BSR14 Continental Device India Surface mount Si-Epitaxial PlanarTransistors Original
BSR14 Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BSR14 Fairchild Semiconductor NPN General Purpose Amplifier Original
BSR14 Fairchild Semiconductor NPN General Purpose Amplifier Original
BSR14 Kexin NPN Switching Transistors Original
BSR14 Philips Semiconductors NPN switching transistors Original
BSR14 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BSR14 TY Semiconductor NPN Switching Transistors - SOT-23 Original
BSR14 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BSR14 N/A Shortform Transistor PDF Datasheet Scan
BSR14 N/A Shortform Transistor PDF Datasheet Scan
BSR14 N/A Semiconductor Master Cross Reference Guide Scan
BSR14 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BSR14 National Semiconductor Bipolar Pro Electron Series Scan
BSR14 National Semiconductor Pro Electron Surface Mount Bipolar Devices Scan
BSR14 National Semiconductor NPN General Purpose Transistors Scan
BSR14 STMicroelectronics Shortform Data Book 1988 Scan
BSR14,215 NXP Semiconductors NPN switching transistors - Complement: BSR16 ; fT min: 300 MHz; hFE max:&gt;40 ; hFE min: 40 ; I<sub>C</sub> max: 800 mA; Polarity: NPN ; Ptot max: 250 mW; t<sub>off</sub>: 250 ns; VCEO max: 40 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original
BSR14_D87Z Fairchild Semiconductor TRANS GP BJT NPN 40V 0.8A 3 pin SOT-23 Original
BSR14_NL Fairchild Semiconductor NPN General Purpose Amplifier Original
Showing first 20 results.

BSR14

Catalog Datasheet MFG & Type PDF Document Tags

BSR14

Abstract: BSR13 DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data , switching transistors BSR13; BSR14 FEATURES PINNING · High current (max. 800 mA) PIN · Low , ) BSR13 BSR14 1 U7* U8* Top view 2 2 MAM255 Note 1. * = p : Made in Hong Kong. * = , package; 3 leads BSR14 2004 Jan 13 2 VERSION SOT23 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 LIMITING VALUES In accordance with the Absolute
NXP Semiconductors
Original
BSR15 BSR16 R75/04/
Abstract: Transistors IC SMD Type Product specification BSR13,BSR14 SOT-23 Unit: mm +0.1 , Ta = 25 Parameter Symbol BSR13 BSR14 Unit Collector-base voltage VCBO 60 75 , 1 of 2 Transistors IC SMD Type Product specification BSR13,BSR14 Electrical , Min Typ 30 nA IE = 0; VCB = 50 V; Tj = 150 BSR14 BSR13 Emitter cutoff current IEBO , ; Tj = 150 Collector cutoff current nA IC = 0; VEB = 5 V BSR14 IC = 0.1 mA; VCE = 10 V TY Semiconductor
Original

marking code VV transistors

Abstract: sot-23 MARKING CODE ZA â I bbSB^Bl ODcfSSb^ì bû4 â  APX N AI1ER PHILIPS/DISCRETE b?E » BSR13 BSR14 SILICON , . > BSR13 BSR14 60 75 V 30 40 V 5 6 V 800 250 150 100 to 300 mA mW oc 30 > 250 40 300 MHz , Material Copyrighted By Its Respective Manufacturer BSR13 BSR14 â  0D2557D 3Tb HAPX i i N AMER , 150 mA; lB = 15 mA Iq = 500 mA; lB = 50 mA BSR13 BSR14 Collector-base voltage (open emitter , °C K/W bsr13 bsr14 'cbo < 30 nA 'cbo < 10 nA 'cbo < 10 fiA !cb0 < 10 fiA !cex < 10 nA
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OCR Scan
marking code VV transistors sot-23 MARKING CODE ZA marx generator 0D25S72 7Z82487

BSR13

Abstract: BSR14 BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BSR13 = U 7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER , 10 V Transition frequency at f = 100 MHz IC = 20 mA; VCE = 20 V hFE hFE BSR13 BSR14 VCBO max , Respective Manufacturer 2303314 QOODTfll T14 BSR13 BSR14 RATINGS (at Ta = 25°C unless otherwise specified) Limiting values BSR13 BSR14 Collector-base voltage (open emitter) VcBO max. 60 75 V Collector-emitter
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OCR Scan
BSR14R max6075 0G007

bsr13

Abstract: bsr14 BSR13 BSR14 SMALL SIGNAL NPN TRANSISTORS Type BSR13 BSR14 s Marking U7 U8 s s s , Storage Temperature Max. O perating Junction Temperature o Value BSR14 75 40 6 0.8 310 -65 to 150 150 60 30 5 Uni t V V V A mW o o C C March 1996 1/5 BSR13/BSR14 THERMAL DATA R t hj , = 0) Test Cond ition s V CE = 60 V for BSR14 V CE = 60 V for BSR14 V BE = -3 V V BE = -3 V Min. Typ . Max. 10 20 Un it nA nA V CB = rated V CBO for BSR13 for BSR14 V CB = rated V CBO for BSR13 for
STMicroelectronics
Original
BSR13/BSR14 0044616/B

TRANSISTOR SMD MARKING CODE LF

Abstract: bsr14 DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet , : BSR15 and BSR16. MARKING TYPE NUMBER BSR13 BSR14 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION TYPE NUMBER BSR13 BSR14 PACKAGE NAME - DESCRIPTION , ; BSR14 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig , System (IEC 60134). SYMBOL VCBO BSR13 BSR14 VCEO collector-emitter voltage BSR13 BSR14 VEBO emitter-base
NXP Semiconductors
Original
TRANSISTOR SMD MARKING CODE LF NXP TRANSISTOR SMD MARKING CODE SOT23 NXP date code marking smd marking TRANSISTOR SMD letter CODE PACKAGE SOT23 nxp transistors Standard Marking PMBT2907A ICP1020807

U8p TRANSISTOR

Abstract: BSR13 . 3 base emitter collector BSR13; BSR14 DESCRIPTION 3 _ 3 MARKING 1 2 MAM2S5 2 TYPE NUMBER BSR13 BSR14 MARKING CODE U7p U8p T o p View Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSR13 BSR14 VcEO collector-emitter voltage BSR13 BSR14 lc ptoi hFE M fe collector current (DC) total power dissipation DC current gain DC current gain BSR13 BSR14 fT transition frequency BSR13 BSR14 toff CONDITIONS open emitter
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OCR Scan
U8p TRANSISTOR u8p Transistor MARKING

BSR13

Abstract: DISCRETE SEMICONDUCTORS DAT BSR13; BSR14 NPN switching transistors Product data sheet , transistors BSR13; BSR14 PINNING FEATURES â'¢ High current (max. 800 mA) PIN â'¢ Low voltage , ) BSR13 BSR14 1 U7* U8* Top view 2 2 MAM255 Note 1. * = p : Made in Hong Kong. * = , package; 3 leads BSR14 2004 Jan 13 2 VERSION SOT23 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 LIMITING VALUES In accordance with the Absolute
NXP Semiconductors
Original

BSR14

Abstract: BSR13 r Z Z SGS-THOMSON Ä 7 # MO©IHimi , ICM Value BSR14 75 40 6 0.8 310 -65 to 150 150 = 0) 60 30 5 Unit V V V A mW °C °C , Temperature Ptot Tstg Tj March 1996 1/5 7C Ì5 C ÌB 3 7 007Û057 072 BSR13/BSR14 THERMAL , Collector Cut-off Current Base Cut-off Current Collector Cut-off Current (Ie = 0) V ce = 60 V for BSR14 V
-
OCR Scan
IC ti 072 sot23 marking u8 BSR15ANDBSR16 100MH D07AD5

BSR14 SOT23

Abstract: DISCRETE SEMICONDUCTORS BITÂ SyiIT BSR13; BSR14 NPN switching transistors Product , collector BSR13; BSR14 DESCRIPTION DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16. 3 _ 3 MARKING TYPE NUMBER BSR13 BSR14 Note 1. * = p : Made , Maximum Rating System (IEC 134). SYMBOL VcBO PARAMETER collector-base voltage BSR13 BSR14 VcEO collector-emitter voltage BSR13 BSR14 V ebo emitter-base voltage BSR13 BSR14 lc Ic M Ib m CONDITIONS open
-
OCR Scan
BSR14 SOT23 SCA63

BSR14 SOT23

Abstract: bsr14 DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet , : BSR15 and BSR16. MARKING TYPE NUMBER BSR13 BSR14 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION TYPE NUMBER BSR13 BSR14 PACKAGE NAME - DESCRIPTION , ; BSR14 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig , System (IEC 60134). SYMBOL VCBO BSR13 BSR14 VCEO collector-emitter voltage BSR13 BSR14 VEBO emitter-base
NXP Semiconductors
Original
771-BSR14

BSR13

Abstract: BSR14 BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BSR13 = U 7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2= EMITTER , frequency at f = 100 MHz IC = 20 mA; Vce = 20 V hFE hFE fr BSR13 BSR14 VCBO max. 60 75 V VCEO max , 250 40 300 MHz. 75 BSR13 BSR14 RATINGS (at Ta = 25°C unless otherwise specified) Limiting values BSR13 BSR14 Collector-base voltage (open emitter) VCB0 max. 60 75 V Collector-emitter
-
OCR Scan
BSR13R RFT-300
Abstract: CD1L BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 , 10 V Transition frequency at f = 100 MHz VCBO VCEO V ebo Ptot 800 250 150 BSR14 75 V 40 V 6 V mA mW °C 100 to 300 40 300 MHz 23833^4 0Q0D7AT TIM BSR13 BSR14 RATINGS (at , RESISTANCE From junction to ambient max. max. max. max. BSR14 75 V 40 V 6 V 800 mA 250 -5 -
OCR Scan

BSR13R

Abstract: BSR14 equivalent -23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 , > 250 BSR14 60 30 5 75 V 40 V 6 V mA 800 250 150 mW °C 100 to 300 40 300 MHz Page 1 of 4 BSR13 BSR14 RATlNGS (at TA = 25°C unless otherwise specified) Limiting , IC = 150 mA; IB: 15 mA BSR14 800 75 V 40 V 6 V mA 250 ­55 to +150 150 500 max
Continental Device India
Original
BSR14 equivalent sot-23 marking U7 VBSR13 C-120

BSR13

Abstract: BSR14 711Qaeb 00^535 2bfl â  PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon , thin-film circuits. QUICK REFERENCE DATA BSR13 BSR14 Collector-base voltage (open emitter) vCBO max , . 7110fl2b OOb^b ITH BSR13 BSR14 ÌPHIN RATINGS Limiting values in accordance with the Absolute Maximum , . max. max. max. max. bsr13 bsr14 60 75 v 30 40 v 5 6 v 800 250 -65 to + 150 150 500 mA mW °C °C K/W bsr13 bsr14 'cbo < 30 â'" nA 'cbo < â'" 10 nA 'cbo < 10 â'" juA 'cbo < â'" 10 pA 'cex < 10 nA !bex < -
-
OCR Scan
CBO10 7Z82485 7Z82486 7Z82484

BSR13

Abstract: BSR14 DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product , NPN switching transistors BSR13; BSR14 FEATURES PINNING · High current (max. 800 mA , MARKING CODE(1) BSR13 BSR14 1 U7* U8* Top view 2 2 MAM255 Note 1. * = p : Made in , mounted package; 3 leads BSR14 2004 Jan 13 2 VERSION SOT23 Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 LIMITING VALUES In accordance with
Philips Semiconductors
Original
transistor npn U8 SCA76
Abstract: BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS Nâ'"Pâ'"N silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = , . max. max. max. max. hFE hFE > 30 fT > 250 BSR14 60 30 5 75 V 40 V 6 V mA 800 250 150 mW °C 100 to 300 40 300 MHz Page 1 of 3 BSR13 BSR14 , ; IB: 15 mA BSR14 800 75 V 40 V 6 V mA 250 â'"55 to +150 150 500 max. °C °C Continental Device India
Original

BSR13

Abstract: BSR14 BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N Silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.70 0.50 Pin configuration 1 = , BSR13 BSR14 max. max. max. max. max. · max. BSR13 60 30 5 BSR14 75 V 40 V 6 V 800 mA mW °C °C K , 10 -· BSR14 - nA 10 nA - ha 10 HA 10 nA Ibex Iebo < < 30 400 1.3 1.6 2.6 > > > 20 nA , BSR14; R Transition frequency at f = 100 MHz Ic = 20 mA; VCE = 20 V BSR13; R IC: 20 mA; VCe = 20 V BSR14
-
OCR Scan

BSR13

Abstract: BSR14 Transistors IC SMD Type NPN Switching Transistors BSR13,BSR14 SOT-23 Unit: mm +0.1 , Ta = 25 Parameter Symbol BSR13 BSR14 Unit Collector-base voltage VCBO 60 75 , ,BSR14 Electrical Characteristics Ta = 25 Parameter Symbol BSR13 ICBO Max Unit IE = 0; VCB = 50 V Testconditons Min Typ 30 nA IE = 0; VCB = 50 V; Tj = 150 BSR14 BSR13 , BSR14 IC = 0.1 mA; VCE = 10 V; 35 IC = 1 mA; VCE = 10 V; BSR13 DC current gain * hFE
Kexin
Original
Abstract: bb53T31 DOESSbT bfl4 « A P X N AUER PHILIPS/DISCRETE BSR13 BSR14 b7E D J V , BSR13 Collector-base voltage (open emitter) BSR14 v CBO max. Collector-emitter voltage ,   BSR13 BSR14 i i 0D2557D 3Tb APX N AUER PHILIPS/DISCRETE J b7E D V. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) BSR14 BSR13 Collector-base , mm x 10 mm x 0,7 mm. April 1991 BSR14 - â  bb53T31 DQE5571 232 APX BSR13 BSR14 -
OCR Scan
53T31 MBB012 D025S72
Abstract: -23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS Nâ'"Pâ'"N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 , hFE > 30 fT > 250 BSR14 60 30 5 75 V 40 V 6 V mA 800 250 150 mW °C 100 to 300 40 300 MHz Page 1 of 4 BSR13 BSR14 RATlNGS (at TA = 25°C unless , ; VCE = 1 V IC = 500 mA; VCE = 10 VBSR13; R IC = 500mA; VCE = 10V BSR14; R Transition frequency at f Continental Device India
Original

BSR13

Abstract: BSR14 711Qaeb 00^535 2bfl â  PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon , thin-film circuits. QUICK REFERENCE DATA BSR13 BSR14 Collector-base voltage (open emitter) vCBO max , . 7110fl2b OOb^b ITH BSR13 BSR14 ÌPHIN RATINGS Limiting values in accordance with the Absolute Maximum , . max. max. max. max. bsr13 bsr14 60 75 v 30 40 v 5 6 v 800 250 -65 to + 150 150 500 mA mW °C °C K/W bsr13 bsr14 'cbo < 30 â'" nA 'cbo < â'" 10 nA 'cbo < 10 â'" juA 'cbo < â'" 10 pA 'cex < 10 nA !bex < -
Diotec
Original
POWER TRANSISTORS BSR 14 UL94V-0 150/C
Showing first 20 results.