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BR 13005

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Abstract: Û ■ TE 13004 • TE 13005 _ T-33-11 T-33-11 Fig. 1 Test circuit for: V(BR]CE0 Fig. 2 Pulse diagram , AEG CORP 1?E D imiMSSSlS electronic Q02e14Sb QQQTbBS 4 ■ TE 13004 • TE 13005 Silicon , range Maximum thermal resistance Junction case "ceo 'sm stg TE 13004 300 600 TE 13005 400 700 , AEG CORP 17E D ■ TE 13004 • TE 13005 GOETMSfci 0G0U3b b T-33-11 T-33-11 Characteristics rcas, = 25 , 125 mH TE 13004 Fig. 1.2 TE 13005 Emitter-base breakdown voltage /E=1 mA Collector-emitter ... OCR Scan
datasheet

7 pages,
200.88 Kb

BFX34 TE13005 TE13004 13005 2 13005 applications BYW32 13005 s 13004 Electronic ballast with 13005 BR 13005 A E 13005 s transistor 13005 AEG T 250 N 700 ballast with 13005 13005 ballast 13005 BR 13005 TEXT
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Abstract: 13004 • TE 13005 Silicon NPN Power Transistors Applications; Switching mode power supply, electronic , washer No. S64542 S64542 Absolute maximum ratings TE 13004 TE 13005 Collector-emitter voltage ''ceo ''ces , ELECTRONIC TE 13004 • TE 13005 17E D ■ fllSODSb 00Cnfe>3b 5 t T-33-11 T-33-11 Characteristics 7" — ZS°C, unless otherwise specified . Collector cut-off current TE 13004 TE 13005 rcssf-150°C, Vce = 600V TE 13004 TE 13005 Vce = 600V Vce = 700V Vce = 700V Collector-emitter breakdown voltage /c = 100 mA, Lc ... OCR Scan
datasheet

7 pages,
206.96 Kb

F 13005 BYW32 13005 npn 13005 st bv228 P 13005 0 ST 13004 BR 13005 8FX34 13005 applications E 13005 s 13005 2 13004 13005 s E13005 Electronic ballast with 13005 13005 ballast with 13005 13005 ballast TEXT
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Abstract: 2 A; IB = 0.4 A ! < rf Ö II OE < < n II U TV!* T D 13004 TD 13005 T D 13004 T D 13005 T D 13004 TD 13005 Sym bol Ices I ces I ces ·ces V(BR)CEO V (BRlCEO V(BR)EBO VCEsat VflEsal I>FE h FE hFE fy 10 10 4 , Applications E lectronic lam p ballast circuits Sw itch-m ode pow er supplies T D 13004 · T D 13005 I B ase 2 C o llecto r 3 E m itter T D 13004 · T D 13005 -S M D 1 B ase 2 C o llecto r 3 E m itter , Semiconductors TD13004 TD13004 · TD13005 TD13005 Type T D 13004 T D 13005 T D 13004 T D 13005 Sym bol V ceo V ceo V ces VcES ... OCR Scan
datasheet

8 pages,
142.47 Kb

13005 TRANSISTOR npn BR 13005 13004 transistor E 13005 E 13005 s transistor Electronic ballast 13005 Transistor 13005- 2 transistor d 13005 F 13005 transistor 13005 CIRCUIT 13004 TRANSISTOR 13005 ballast 13005 TRANSISTOR TD13004 TD13005 13005 s TD13004 TD13005 TRANSISTOR 13005 TD13004 TD13005 13005 2 transistor TD13004 TD13005 TD13004 TD13004 TD13005 TD13005 TEXT
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Abstract: V; Ic = 4 A VCe = 10 V; lc = 500 mA; f = 1 M Hz Type TE 13004 T E 13005 TE13004 TE13004 T E 13005 T E 13004 T E 13005 Te m ic TELEFUNKEN Semiconductors Sym bol Ices ICES ICES ICES V(BR)CEO V(BR)CEO V(BR)EBO VcEsai V BEsat hFE f>FE hFE fj M in Typ M ax 50 50 0.5 0.5 U nit |lA (lA mA mA V V , range Tease - 25°C -! Test C onditions Type TE 13004 TE 13005 TE 13004 TE 13005 Sym bol V c eo V ... OCR Scan
datasheet

7 pages,
141.86 Kb

13005 D E 13005 TRANSISTOR tr 13005 13004 TRANSISTOR TR 13005 transistor transistor E 13005 transistor Electronic ballast 13005 E 13005 LO 13005 TE13004 TE13005 TEXT
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Abstract: 13005 Transistor (NPN) HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR NPN TO-220 FEATURES Power dissipation PCM : 1.5 WTamb=25 Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55 to , Collector-base breakdown voltage V(BR)CBO Ic= 1000 uAIE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000 uAIC ... HSiN Semiconductor
Original
datasheet

3 pages,
123.01 Kb

13005 NPN Transistor 13005 npn TRANSISTOR npn ic 1000ma BR 13005 A E 13005 TRANSISTOR TRANSISTOR A1 BR 13005 HSiN Semiconductor Pte 13005 A transistor 13005 CIRCUIT 13005 2 13005 power transistor 13005 s transistor d 1710 13005 transistor E 13005 transistor 13005 13005 TRANSISTOR npn 13005 TRANSISTOR TEXT
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Abstract: 13005 Ices TD13004 TD13004 VfBRlCBO TD 13005 VfBRlCEO V(BR)EBO VcEsat VBEsat hFE hFE hFE fp 10 10 4 4 Min Typ , TD13005 TD13005 Type TD13004 TD13004 TD13005 TD13005 TD13004 TD13004 TD 13005 Symbol VCEO Vceo VCES VCES Vebo Ic ICM Ib Ibm Ptot Ti Tsta , |X S |iS (IS ¡xs t Ic 0 to 30 V ± £ y } V(br)ceo v CE v (BR)CEO 100 mQ t, = 10 ms Figure 1. Test circuit for V(br)CE0 136 Rev. A l: 01.05.1995 öTEDGTb 0 Gl b 4 c15 TDÔ T e m ... OCR Scan
datasheet

7 pages,
297.95 Kb

13005 2 transistor BR 13005 A T0252 TI BB cross transistor 13005 transistor 13005 CIRCUIT BR 13005 13005 ballast 13005 TO-252 transistor d 13005 SMD 13005 transistor transistor E 13005 TD13005 TD13004 TD13005 transistor Electronic ballast 13005 TD13004 TD13005 TD13004 TD13004 TD13005 TEXT
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Abstract: 3 001aaa706 AMP b sym033 9397 750 13005 Product data sheet © Koninklijke Philips , resistance from junction to soldering point 9397 750 13005 Product data sheet Typ Unit 240 , MOS-FET; unless otherwise specified V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0 V; ID = 10 uA 6 - - V V(BR)G1-SS gate 1-source breakdown voltage VGS = VDS = 0 V; IG1-S = 10 mA 6 - 10 V V(BR)G2-SS gate 2-source breakdown voltage VGS = VDS = 0 V ... Philips Semiconductors
Original
datasheet

22 pages,
158.01 Kb

UHF transistor handbook 13005 TRANSISTOR A1 marking code amplifier BF1205C dual gate mosfet in vhf amplifier he 13005 marking code 718 sot363 mosfet K 2865 13005 transistor 13005 CIRCUIT transistor 13005 13005 equivalent internal GL 7815 Low Capacitance MOS FET 13005 TEXT
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Abstract: ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base , - ICBO - - 1 mA IEBO - - 1 mA V(BR)CEO 400 - - V VCE , , Stock Code: 724) ® Dated : 28/08/2008 ST 13005 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS ... Semtech Electronics
Original
datasheet

2 pages,
141.26 Kb

13005 power transistor he 13005 13005 transistor datasheet 13005 equivalent 13005 npn F 13005 transistor 13005 CIRCUIT 13005 st BR 13005 13005 2 ST-13005 13005 TO-220 13005 A ST-13005 A 13005 transistor 13005 TEXT
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Abstract: 1199.7 1245.87 1300.5 1346.67 GND 8 1199.7 1381.86 1300.5 1482.66 GND 9 1199.7 1518.66 1300.5 1619.46 LO (1) 6 GND 10 1077.3 1908.9 1281.6 , classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http , above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in ... Texas Instruments
Original
datasheet

5 pages,
90.16 Kb

UCC27201A-DIE SLUSB70 TEXT
datasheet frame
Abstract: 1908.9 X MAX 401.58 246.24 235.8 302.58 1281.6 1281.6 1300.5 1300.5 1300.5 1281.6 Y MAX 2007 1447.74 , (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com , component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The ... Texas Instruments
Original
datasheet

5 pages,
93.79 Kb

UCC27201A-DIE SLUSB70 TEXT
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