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Part Manufacturer Description Datasheet BUY
130058 TE Connectivity Ltd SOLIS, R 22-16 M6 visit Digikey
130054 TE Connectivity Ltd PG RING visit Digikey

BR 13005

Catalog Datasheet MFG & Type PDF Document Tags

BR 13005

Abstract: 13005 Û â  TE 13004 â'¢ TE 13005 _ T-33-11 Fig. 1 Test circuit for: V(BR]CE0 Fig. 2 Pulse diagram , AEG CORP 1?E D imiMSSSlS electronic Q02e14Sb QQQTbBS 4 â  TE 13004 â'¢ TE 13005 Silicon , range Maximum thermal resistance Junction case "ceo 'sm stg TE 13004 300 600 TE 13005 400 700 , AEG CORP 17E D â  TE 13004 â'¢ TE 13005 GOETMSfci 0G0U3b b T-33-11 Characteristics rcas, = 25 , 125 mH TE 13004 Fig. 1.2 TE 13005 Emitter-base breakdown voltage /E=1 mA Collector-emitter
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TE13004 TE13005 BR 13005 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 T-33-U 150CC-

13005 ballast

Abstract: 13005 13004 â'¢ TE 13005 Silicon NPN Power Transistors Applications; Switching mode power supply, electronic , washer No. S64542 Absolute maximum ratings TE 13004 TE 13005 Collector-emitter voltage ''ceo ''ces , ELECTRONIC TE 13004 â'¢ TE 13005 17E D â  fllSODSb 00Cnfe>3b 5 t T-33-11 Characteristics 7" â'" ZS°C, unless otherwise specified . Collector cut-off current TE 13004 TE 13005 rcssf-150°C, Vce = 600V TE 13004 TE 13005 Vce = 600V Vce = 700V Vce = 700V Collector-emitter breakdown voltage /c = 100 mA, Lc
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Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s T-33MI

13005 2 transistor

Abstract: D13005 2 A; IB = 0.4 A ! < rf Ö II OE < < n II U TV!* T D 13004 TD 13005 T D 13004 T D 13005 T D 13004 TD 13005 Sym bol Ices I ces I ces ·ces V(BR)CEO V (BRlCEO V(BR)EBO VCEsat VflEsal I>FE h FE hFE fy 10 10 4 , Applications E lectronic lam p ballast circuits Sw itch-m ode pow er supplies T D 13004 · T D 13005 I B ase 2 C o llecto r 3 E m itter T D 13004 · T D 13005 -S M D 1 B ase 2 C o llecto r 3 E m itter , Semiconductors TD13004 · TD13005 Type T D 13004 T D 13005 T D 13004 T D 13005 Sym bol V ceo V ceo V ces VcES
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13005 2 transistor D13005 13005 TRANSISTOR d13005t 13005T 13004 TRANSISTOR T02S1 T0252

E13005

Abstract: LO 13005 V; Ic = 4 A VCe = 10 V; lc = 500 mA; f = 1 M Hz Type TE 13004 T E 13005 TE13004 T E 13005 T E 13004 T E 13005 Te m ic TELEFUNKEN Semiconductors Sym bol Ices ICES ICES ICES V(BR)CEO V(BR)CEO V(BR)EBO VcEsai V BEsat hFE f>FE hFE fj M in Typ M ax 50 50 0.5 0.5 U nit |lA (lA mA mA V V , range Tease - 25°C -! Test C onditions Type TE 13004 TE 13005 TE 13004 TE 13005 Sym bol V c eo V
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LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 TR 13005 transistor

13005 TRANSISTOR

Abstract: 13005 TRANSISTOR npn 13005 Transistor (NPN) HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR NPN TO-220 FEATURES Power dissipation PCM : 1.5 WTamb=25 Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55 to , Collector-base breakdown voltage V(BR)CBO Ic= 1000 µAIE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000 µAIC
HSiN Semiconductor
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13005 TRANSISTOR npn transistor d 1710 13005 power transistor 13005 A HSiN Semiconductor Pte transistor 13005 CIRCUIT 100TYP 540TYP

transistor Electronic ballast 13005

Abstract: TD13005 13005 Ices TD13004 VfBRlCBO TD 13005 VfBRlCEO V(BR)EBO VcEsat VBEsat hFE hFE hFE fp 10 10 4 4 Min Typ , TD13005 Type TD13004 TD13005 TD13004 TD 13005 Symbol VCEO Vceo VCES VCES Vebo Ic ICM Ib Ibm Ptot Ti Tsta , |X S |iS (IS ¡xs t Ic 0 to 30 V ± £ y } V(br)ceo v CE v (BR)CEO 100 mQ t, = 10 ms Figure 1. Test circuit for V(br)CE0 136 Rev. A l: 01.05.1995 öTEDGTb 0 Gl b 4 c15 TDÔ T e m
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SMD 13005 transistor transistor d 13005 13005 TO-252 TI BB cross BR 13005 A T0251

Low Capacitance MOS FET 13005

Abstract: GL 7815 3 001aaa706 AMP b sym033 9397 750 13005 Product data sheet © Koninklijke Philips , resistance from junction to soldering point 9397 750 13005 Product data sheet Typ Unit 240 , MOS-FET; unless otherwise specified V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0 V; ID = 10 µA 6 - - V V(BR)G1-SS gate 1-source breakdown voltage VGS = VDS = 0 V; IG1-S = 10 mA 6 - 10 V V(BR)G2-SS gate 2-source breakdown voltage VGS = VDS = 0 V
Philips Semiconductors
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BF1205C Low Capacitance MOS FET 13005 GL 7815 13005 equivalent internal dual gate mosfet in vhf amplifier he 13005 mosfet K 2865 MSC895

transistor 13005

Abstract: npn silicon transistor 13005 application note ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base , - ICBO - - 1 mA IEBO - - 1 mA V(BR)CEO 400 - - V VCE , , Stock Code: 724) ® Dated : 28/08/2008 ST 13005 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS
Semtech Electronics
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npn silicon transistor 13005 application note ST-13005 A 13005 TO-220 ST-13005 13005 st 13005 equivalent
Abstract: 1199.7 1245.87 1300.5 1346.67 GND 8 1199.7 1381.86 1300.5 1482.66 GND 9 1199.7 1518.66 1300.5 1619.46 LO (1) 6 GND 10 1077.3 1908.9 1281.6 , classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http , above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in Texas Instruments
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UCC27201A-DIE SLUSB70 UCC27201A UCC27201 ISO/TS16949
Abstract: 1908.9 X MAX 401.58 246.24 235.8 302.58 1281.6 1281.6 1300.5 1300.5 1300.5 1281.6 Y MAX 2007 1447.74 , (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com , component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Texas Instruments
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UCC27201ATDA2 UCC27201ATDA3

tr 13005

Abstract: 2SB1732 SPICE PARAMETER 2SB1732 by ROHM TR Div. * Q2SB1732 PNP BJT model * Date: 2006/12/07 .MODEL Q2SB1732 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 + RB=1.2842 + RC=49.315E-3 + CJE=98.302E-12 + MJE=.58268 + CJC=35.215E-12 + MJC=.40433 + TF=348.37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 + XTB=1.5000 -
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tr 13005 12842 000E-3
Abstract: H07 H08 H09 A 12.5±0.5 12.5±0.5 12.5±0.5 15.0±0.5 15.0±0.5 i 1.0± 0.5 12.0±0.5 13.0±0.5 16.0±0.5 , H15 H16 H17 H I8 A 12.5±0.5 15.0±0.5 13.0±0.5 15.0 + 0.5 B 7.0± 0.5 6 .5± 0.5 6.5± 0.5 6.4± 0 , 0.5 12.5 rfc0.5 10.0±0.5 8.5 + 0 .5 H35 H36 H36-1 H36-2 H36-3 H36-4 A 18.0 + 0.5 13.0±0.5 , + 1.0 14.0± 1.0 16.0± 1.0 14.0 ± L 0 BR-3 BR-6 BR-8 1b-1 5 -2-1 c m OM i 6.4 - -
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RL101-A-B DO-41 DO-15

2SB1709

Abstract: SPICE PARAMETER 2SB1709 by ROHM TR Div. * Q2SB1709 PNP BJT model * Date: 2006/12/07 .MODEL Q2SB1709 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 + RB=1.2842 + RC=49.315E-3 + CJE=98.302E-12 + MJE=.58268 + CJC=35.215E-12 + MJC=.40433 + TF=348.37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 + XTB=1.5000 -
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0844

Abstract: 9049 SPICE PARAMETER QST8 by ROHM TR Div. * QQST8 PNP BJT model * Date: 2006/12/07 .MODEL QQST8 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 + RB=1.2842 + RC=49.315E-3 + CJE=98.302E-12 + MJE=.58268 + CJC=35.215E-12 + MJC=.40433 + TF=348.37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 + XTB=1.5000 -
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0844 9049 QST8

tr 13005

Abstract: SPICE PARAMETER US6T8 by ROHM TR Div. * QUS6T8 PNP BJT model * Date: 2006/12/07 .MODEL QUS6T8 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 + RB=1.2842 + RC=49.315E-3 + CJE=98.302E-12 + MJE=.58268 + CJC=35.215E-12 + MJC=.40433 + TF=348.37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 + XTB=1.5000 -
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TLP781

Abstract: TLP781F 30 pF IC = 0.5 mA 80 V V (BR) ECO IE = 0.1 mA , 30 IC = 2.4 mA, IF = 8 mA V (BR) CEO 0.4 IC = 0.2 mA, IF = 1 mA , 6 2008-01-17 TLP781/TLP781F 3.6 (1) TLP781(TP6) 3.6±0.8 +2.0 13.0±0.5 332 max 16.4 -0 102±1.5 : : 4 1.5±0.5 23max : mm 4 (2) TLP781F(TP7) +2.0 13.0±0.5
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E67349 EN60335-1 EN60747-5-2 tlp781 EN60747-5-2 TP62 TLP781BL UL1577 EN60065 EN60950-1

212 s sot-23

Abstract: smd part marking b1 sot ) Min. 0.78 V(BR)R Description 1.25 30 100 nA VR=240V 35 100 µA VR , /S Reel Dimensions (in mm) A C G N T 178.0 13.0+0.5/-0.2 9.9 max. 54.5±0.5 14.4 max. 330.0 13.0+0.5/-0.2 9.9 max. 100.0±0.5 14.4 max. Packing Quantity
Taitron Components
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MMBD3004A MMBD3004C MMBD3004S 212 s sot-23 smd part marking b1 sot SMD p11 smd code marking sot23 SMD MARKING CODE a0 212 t sot-23 MMBD3004A/C/S MIL-STD-750

IRF 850

Abstract: mje13005-1 monolithic Darlingtons with integral speed up and damper diodes. POWER MOS TRANSISTORS V(BR)DSS RDS(on) P , 220 MJE 13005 1 4 1000 4 0.9 5 850 400 70 TO 220 SGSF 321 (1) 1.5 3.5 700 2.5 0.3 5 850 400 70 TO
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MTH6N60 MTP6N60 TS59C11 M9306 IRF 850 mje13005-1 transistors bu 407 IRF 810 sgsp 369 ST24C02 TS93C46

BATTERY CR2032 Panasonic

Abstract: panasonic cr2354 Poly-carbonmonofluoride (BR Series) and Manganese Dioxide (CR Series) COIN CELL TAB CONFIGURATIONS , Type Model Configuration Number With Insulation Wrap Without Insulation Wrap Diagram No. BR TYPE , 24 25 26 27 28 * Refer to page 60 for BR "A" (High Temp) Tab configurations. Please contact , Panasonic for the latest information. BR & CR Series Coin Cell Tab Configurations DIMENSIONS / MM (INCH , ) 0.2 0.75(0.03) (0.008) 10.0±0.5 (0.39±0.02) 3 1.5(0.06) 3.5(0.14) 5.0(0.20) BR/CR1220
Panasonic
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CR2354 CR2477 BATTERY CR2032 Panasonic panasonic cr2354 CR2032 panasonic BR2325 panasonic BR2032 panasonic PANASONIC cr2032 BR1220 BR1225 BR1632 BR2016 BR2032 BR2325

M705-221CM5-32-10

Abstract: . Halogen-free * (FH31W series) *As defined by IEC61249-2-21 Br-900ppm maximum, Cl-900ppm maximum, Cl + Br combined-1,500ppm maximum Br 900ppm or lower, Cl 900ppm or lower, Br + Cl 1,500ppm or lower 7 , 1.3±0.05 1.3±0.05 Outline of the connector J±0.1 H±0.1 Outline of the connector J±0.1 H
Hirose Electric
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M705-221CM5-32-10 FH31H FH31S FH28H
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