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Part Manufacturer Description Datasheet BUY
1300580035 Molex Connector Accessory visit Digikey
1300580059 Molex Rectangular Connector Adapter visit Digikey
1300530004 Molex Telecom and Datacom Connector visit Digikey
1300570001 Molex Rectangular Connector visit Digikey
1300550016 Molex Telecom and Datacom Connector visit Digikey
1300580057 Molex Rectangular Connector Adapter, 8 Contacts(Side1), 8 Contacts(Side2), Female-Female visit Digikey

BR+13005

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: AEG CORP 1?E D imiMSSSlS electronic Q02e14Sb QQQTbBS 4 â  TE 13004 â'¢ TE 13005 Silicon , range Maximum thermal resistance Junction case "ceo 'sm stg TE 13004 300 600 TE 13005 400 700 , AEG CORP 17E D â  TE 13004 â'¢ TE 13005 GOETMSfci 0G0U3b b T-33-11 Characteristics rcas, = 25 , 125 mH TE 13004 Fig. 1.2 TE 13005 Emitter-base breakdown voltage /E=1 mA Collector-emitter , Û â  TE 13004 â'¢ TE 13005 _ T-33-11 Fig. 1 Test circuit for: V(BR]CE0 Fig. 2 Pulse diagram -
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TE13004 TE13005 BR 13005 13005 13005 ballast ballast with 13005 AEG T 250 N 700 E 13005 s T-33-U 150CC-
Abstract: 13004 â'¢ TE 13005 Silicon NPN Power Transistors Applications; Switching mode power supply, electronic , washer No. S64542 Absolute maximum ratings TE 13004 TE 13005 Collector-emitter voltage ''ceo ''ces , ELECTRONIC TE 13004 â'¢ TE 13005 17E D â  fllSODSb 00Cnfe>3b 5 t T-33-11 Characteristics 7" â'" ZS°C, unless otherwise specified . Collector cut-off current TE 13004 TE 13005 rcssf-150°C, Vce = 600V TE 13004 TE 13005 Vce = 600V Vce = 700V Vce = 700V Collector-emitter breakdown voltage /c = 100 mA, Lc -
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Electronic ballast with 13005 E13005 13005 2 13005 s 13004 8FX34 T-33MI
Abstract: Applications E lectronic lam p ballast circuits Sw itch-m ode pow er supplies T D 13004 · T D 13005 I B ase 2 C o llecto r 3 E m itter T D 13004 · T D 13005 -S M D 1 B ase 2 C o llecto r 3 E m itter , Semiconductors TD13004 · TD13005 Type T D 13004 T D 13005 T D 13004 T D 13005 Sym bol V ceo V ceo V ces VcES , 2 A; IB = 0.4 A ! < rf Ö II OE < < n II U TV!* T D 13004 TD 13005 T D 13004 T D 13005 T D 13004 TD 13005 Sym bol Ices I ces I ces ·ces V(BR)CEO V (BRlCEO V(BR)EBO VCEsat VflEsal I>FE h FE hFE fy 10 10 4 -
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13005 2 transistor D13005 TRANSISTOR 13005 13005 TRANSISTOR d13005t 13005T T02S1 T0252
Abstract: range Tease - 25°C -! Test C onditions Type TE 13004 TE 13005 TE 13004 TE 13005 Sym bol V c eo V , V; Ic = 4 A VCe = 10 V; lc = 500 mA; f = 1 M Hz Type TE 13004 T E 13005 TE13004 T E 13005 T E 13004 T E 13005 Te m ic TELEFUNKEN Semiconductors Sym bol Ices ICES ICES ICES V(BR)CEO V(BR)CEO V -
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LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 TR 13005 transistor
Abstract: 13005 Transistor (NPN) HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR NPN TO-220 FEATURES Power dissipation PCM : 1.5 WTamb=25 Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 Parameter Symbol 1.BASE 2.COLLECTOR 3.EMITTER unless Test otherwise 123 specified conditions MIN TYP MAX UNIT HSiN Semiconductor
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13005 TRANSISTOR npn transistor d 1710 13005 power transistor transistor 13005 CIRCUIT 13005 A HSiN Semiconductor Pte 100TYP 540TYP
Abstract: TD13005 Type TD13004 TD13005 TD13004 TD 13005 Symbol VCEO Vceo VCES VCES Vebo Ic ICM Ib Ibm Ptot Ti Tsta , 13005 Ices TD13004 VfBRlCBO TD 13005 VfBRlCEO V(BR)EBO VcEsat VBEsat hFE hFE hFE fp 10 10 4 4 Min Typ -
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SMD 13005 transistor transistor d 13005 13005 TO-252 TI BB cross BR 13005 A T0251
Abstract: 3 001aaa706 AMP b sym033 9397 750 13005 Product data sheet © Koninklijke Philips , resistance from junction to soldering point 9397 750 13005 Product data sheet Typ Unit 240 , ] RG1 connects gate 1 (b) to VGG = 5 V (see Figure 3). 9397 750 13005 Product data sheet , = YS(opt) NF - 1.4 2.1 dB 9397 750 13005 Product data sheet © Koninklijke , ; typical values. Fig 5. Output characteristics; typical values. 9397 750 13005 Product data sheet Philips Semiconductors
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BF1205C Low Capacitance MOS FET 13005 GL 7815 13005 equivalent internal mosfet K 2865 he 13005 dual gate mosfet in vhf amplifier MSC895
Abstract: ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V IC 4 A Power Dissipation (Ta = 25 C) Ptot 2 W Power , , Stock Code: 724) ® Dated : 28/08/2008 ST 13005 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS Semtech Electronics
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ST-13005 A 13005 TO-220 ST-13005 13005 st F 13005 13005 npn
Abstract: 1199.7 1245.87 1300.5 1346.67 GND 8 1199.7 1381.86 1300.5 1482.66 GND 9 1199.7 1518.66 1300.5 1619.46 LO (1) 6 GND 10 1077.3 1908.9 1281.6 Texas Instruments
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UCC27201A-DIE SLUSB70 UCC27201A UCC27201 ISO/TS16949
Abstract: 1908.9 X MAX 401.58 246.24 235.8 302.58 1281.6 1281.6 1300.5 1300.5 1300.5 1281.6 Y MAX 2007 1447.74 Texas Instruments
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UCC27201ATDA2 UCC27201ATDA3
Abstract: SPICE PARAMETER 2SB1732 by ROHM TR Div. * Q2SB1732 PNP BJT model * Date: 2006/12/07 .MODEL Q2SB1732 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 + RB=1.2842 + RC=49.315E-3 + CJE=98.302E-12 + MJE=.58268 + CJC=35.215E-12 + MJC=.40433 + TF=348.37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 + XTB=1.5000 - -
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tr 13005 12842 000E-3
Abstract: H07 H08 H09 A 12.5±0.5 12.5±0.5 12.5±0.5 15.0±0.5 15.0±0.5 i 1.0± 0.5 12.0±0.5 13.0±0.5 16.0±0.5 , H15 H16 H17 H I8 A 12.5±0.5 15.0±0.5 13.0±0.5 15.0 + 0.5 B 7.0± 0.5 6 .5± 0.5 6.5± 0.5 6.4± 0 , 0.5 12.5 rfc0.5 10.0±0.5 8.5 + 0 .5 H35 H36 H36-1 H36-2 H36-3 H36-4 A 18.0 + 0.5 13.0±0.5 -
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RL101-A-B DO-41 DO-15
Abstract: SPICE PARAMETER 2SB1709 by ROHM TR Div. * Q2SB1709 PNP BJT model * Date: 2006/12/07 .MODEL Q2SB1709 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 + RB=1.2842 + RC=49.315E-3 + CJE=98.302E-12 + MJE=.58268 + CJC=35.215E-12 + MJC=.40433 + TF=348.37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 + XTB=1.5000 - -
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Abstract: SPICE PARAMETER QST8 by ROHM TR Div. * QQST8 PNP BJT model * Date: 2006/12/07 .MODEL QQST8 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 + RB=1.2842 + RC=49.315E-3 + CJE=98.302E-12 + MJE=.58268 + CJC=35.215E-12 + MJC=.40433 + TF=348.37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 + XTB=1.5000 - -
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0844 9049 QST8
Abstract: SPICE PARAMETER US6T8 by ROHM TR Div. * QUS6T8 PNP BJT model * Date: 2006/12/07 .MODEL QUS6T8 PNP + IS=750.00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 + RB=1.2842 + RC=49.315E-3 + CJE=98.302E-12 + MJE=.58268 + CJC=35.215E-12 + MJC=.40433 + TF=348.37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 + XTB=1.5000 - -
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Abstract: 6 2008-01-17 TLP781/TLP781F 3.6 (1) TLP781(TP6) 3.6±0.8 +2.0 13.0±0.5 332 max 16.4 -0 102±1.5 : : 4 1.5±0.5 23max : mm 4 (2) TLP781F(TP7) +2.0 13.0±0.5 -
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E67349 EN60335-1 EN60747-5-2 tlp781 EN60747-5-2 TLP781BL TP62 UL1577 EN60065 EN60950-1
Abstract: /S Reel Dimensions (in mm) A C G N T 178.0 13.0+0.5/-0.2 9.9 max. 54.5±0.5 14.4 max. 330.0 13.0+0.5/-0.2 9.9 max. 100.0±0.5 14.4 max. Packing Quantity Taitron Components
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MMBD3004A MMBD3004C MMBD3004S 212 s sot-23 smd part marking b1 sot SMD p11 SMD MARKING CODE a0 smd code marking sot23 smd transistor marking p12 MMBD3004A/C/S MIL-STD-750
Abstract: .1 1.5 Y0.0 3° 4.0±0.1 2.00±0.05 1.75±0.10 178 1.15 Y0.05 13.0±0.5 2.3±0.1 (in , ,000330 13.0±0.5 mm 4 P35J3.pdf No.P35-3webPDF 00.7.21 SURFACE ACOUSTIC WAVE FILTER , = 50 Rg = Ri = 50 4.0±0.1 3°max. W0.1 1.5 Y0.0 17.5max. (60) 13.0±0.5 , .0 1.75±0.10 4.0±0.1 2.0±0.1 5.5±0.1 178 1.5±0.1 Direction of Feed Cover Tape 13.0±0.5 , ) 10,000330 13.0±0.5 mm 6 P35J3.pdf No.P35-3webPDF 00.7.21 SURFACE ACOUSTIC WAVE muRata
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SAFC1489MC90S SAFC820ME90N SAFC820MD90T SAFC902 SAFC836 SAFC83 F0518 SAFC325 F0885 safc947 safc902.5mc P35-3 SAFS1441MC1B0T SAFC950MB90N SAFC950MC90T
Abstract: .10 1.15 Y0.05 Cover Tape 13.0±0.5 2.3±0.1 (in mm) · 330 reel !PACKAGING QUANTITY , reel) 10,000 pcs (Taping : 330 reel) 13.0±0.5 (in mm) 4 This is the PDF file of catalog , DIMENSIONS 4.0±0.1 3°max. W0.1 1.5 Y0.0 17.5max. (60) 13.0±0.5 0.30±0.05 (178 , 4.0±0.1 2.0±0.1 5.5±0.1 · 178 reel 1.5±0.1 Direction of Feed Cover Tape 13.0±0.5 3.3±0.1 , ) 13.0±0.5 (in mm) 6 This is the PDF file of catalog No.P35E-2. No.P35E2.pdf 00.7.21 SURFACE muRata
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SAFC246 380ME35X SAFC1960ML1C0T safc*869mf70t SAFU110.6MSA40T SAFC325ME70N safc902.5 SAFC434MC70T SAFC815 DRAWING SAFS1489MC1B0T SAFC895 5T942 SAFC906ML90T SAFC851ML90T 5MC90T
Abstract: 9.7±0.3 11.0±0.5 < 12.7 < 12.5 13.0±0.5 13.0±0.5 13.2±0.5 < 14.0 < 14.0 < 14.0 < 14.0 < 14.2 < 14.4 < 14.7 , 10.0±0.5 10.0±0.5 10.0±0.5 10.0±0.5 < 12.05 < 12.05 13.0±0.5 13.0±0.5 13.0±0.5 < 7.0 < 7.0 10.0±0.5 10.0±0.5 10.0±0.5 10.0±0.5 13.0±0.5 17.4±0.5 16.0±0.5 10.0±0.5 13.0±0.5 13.0±0.5 13.0±0.5 < 15.0 10.0±0.5 Delta Electronics
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DHCB1490B-861 202J DHCB0620B DHCB0630B DHCB0850B DHCB1040B DHCB1040B-H DHCB1040BS
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