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BR 13005

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Abstract: AEG CORP 17E » 005=142^ 000=^37 Û - TE 13004 • TE 13005 _ T-33-11 T-33-11 Fig. 1 Test circuit for: V(BR , AEG CORP 1?E D imiMSSSlS electronic Q02e14Sb QQQTbBS 4 - TE 13004 • TE 13005 Silicon NPN Power , case "ceo 'sm stg TE 13004 300 600 TE 13005 400 700 thJC 9 4 8 2 4 62.5 150 -65. + 150 2.2 V V V A A A A W °C °C K/W T1.2/716.0888 E 251 AEG CORP 17E D - TE 13004 • TE 13005 , Collector-emitter breakdown voltage /c = 100 mA, ¿(,= 125 mH TE 13004 Fig. 1.2 TE 13005 Emitter-base breakdown ... OCR Scan
datasheet

7 pages,
200.88 Kb

BFX34 TE13005 TE13004 13005 2 13005 applications BYW32 AEG T 250 N 700 13005 s 13004 E 13005 s Electronic ballast with 13005 transistor 13005 ballast with 13005 13005 ballast datasheet abstract
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Abstract: • TE 13005 Silicon NPN Power Transistors Applications; Switching mode power supply, electronic , Absolute maximum ratings TE 13004 TE 13005 Collector-emitter voltage ''ceo ''ces 300 600 400 700 V V , thJC 2.2 K/W T1.2/716. 2772 I.0888 E B-09 251 TELEFUNKEN ELECTRONIC TE 13004 • TE 13005 17E D , Collector cut-off current TE 13004 TE 13005 rcssf-150°C, Vce = 600V TE 13004 TE 13005 Vce = 600V Vce = , 13005 Emitter-base breakdown voltage /E=1 mA Collector-emitter saturation voltage /C=2A,/B = 0.5A ... OCR Scan
datasheet

7 pages,
206.96 Kb

13005 st 13005 npn F 13005 he 13005 ia5e-25 13005 A S6454 ST 13004 bv228 E 13005 s 13005 applications 13005 2 13004 Electronic ballast with 13005 datasheet abstract
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Abstract: 13005 Transistor (NPN) HSiN Semiconductor Pte Ltd 13005 www.hsin.com.sg TRANSISTOR NPN TO-220 FEATURES Power dissipation PCM : 1.5 WTamb=25 Collector current ICM: 4A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55 to +150 , V(BR)CBO Ic= 1000 µAIE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000 µAIC=0 9 V mAIB=0 ... Original
datasheet

3 pages,
123.01 Kb

E 13005 TRANSISTOR 13005 NPN Transistor TRANSISTOR A1 13005 equivalent 13005 TRANSISTOR equivalent HSiN Semiconductor Pte 13005 A BR 13005 13005 TRANSISTOR npn transistor 13005 CIRCUIT 13005 power transistor 13005 2 datasheet abstract
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Abstract: 13005 Ices TD13004 TD13004 VfBRlCBO TD 13005 VfBRlCEO V(BR)EBO VcEsat VBEsat hFE hFE hFE fp 10 10 4 4 Min Typ , TD13005 TD13005 Type TD13004 TD13004 TD13005 TD13005 TD13004 TD13004 TD 13005 Symbol VCEO Vceo VCES VCES Vebo Ic ICM Ib Ibm Ptot Ti Tsta , |X S |iS (IS ¡xs t Ic 0 to 30 V ± £ y } V(br)ceo v CE v (BR)CEO 100 mQ t, = 10 ms Figure 1. Test circuit for V(br)CE0 136 Rev. A l: 01.05.1995 öTEDGTb 0 Gl b 4 c15 TD" T e m ... OCR Scan
datasheet

7 pages,
297.95 Kb

TD13005 13005 TO-252 SMD 13005 transistor BR 13005 13005 ballast transistor E 13005 TD13004 TD13004 abstract
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Abstract: 2 A; IB = 0.4 A ! < rf - II OE < < n II U TV!* T D 13004 TD 13005 T D 13004 T D 13005 T D 13004 TD 13005 Sym bol Ices I ces I ces ·ces V(BR)CEO V (BRlCEO V(BR)EBO VCEsat VflEsal I>FE h FE hFE fy 10 10 4 , Applications E lectronic lam p ballast circuits Sw itch-m ode pow er supplies T D 13004 · T D 13005 I B ase 2 C o llecto r 3 E m itter T D 13004 · T D 13005 -S M D 1 B ase 2 C o llecto r 3 E m itter , Semiconductors TD13004 TD13004 · TD13005 TD13005 Type T D 13004 T D 13005 T D 13004 T D 13005 Sym bol V ceo V ceo V ces VcES ... OCR Scan
datasheet

8 pages,
142.47 Kb

transistor d 13005 transistor 13005 CIRCUIT F 13005 13005 TRANSISTOR 13004 TRANSISTOR 13005 ballast 13005 s TRANSISTOR 13005 13005 2 transistor TD13004 TD13005 TD13004 abstract
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Abstract: ST 13005 NPN Silicon Power Transistors for high-voltage, high-speed power switching applications. TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V , - ICBO - - 1 mA IEBO - - 1 mA V(BR)CEO 400 - - V VCE , , Stock Code: 724) ® Dated : 28/08/2008 ST 13005 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS ... Original
datasheet

2 pages,
141.26 Kb

ST-13005 A 13005 power transistor he 13005 13005 transistor datasheet 13005 equivalent 13005 npn F 13005 13005 TO-220 transistor 13005 CIRCUIT 13005 st BR 13005 ST-13005 13005 2 datasheet abstract
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Abstract: V; Ic = 4 A VCe = 10 V; lc = 500 mA; f = 1 M Hz Type TE 13004 T E 13005 TE13004 TE13004 T E 13005 T E 13004 T E 13005 Te m ic TELEFUNKEN Semiconductors Sym bol Ices ICES ICES ICES V(BR)CEO V(BR)CEO V(BR)EBO VcEsai V BEsat hFE f>FE hFE fj M in Typ M ax 50 50 0.5 0.5 U nit |lA (lA mA mA V V , range Tease - 25°C -! Test C onditions Type TE 13004 TE 13005 TE 13004 TE 13005 Sym bol V c eo V ... OCR Scan
datasheet

7 pages,
141.86 Kb

transistor E 13005 LO 13005 13004 TRANSISTOR TE13004 TE13005 TE13004 abstract
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Abstract: SPICE PARAMETER US6T8 by ROHM TR Div. * QUS6T8 PNP BJT model * Date: 2006/12/07 .MODEL QUS6T8 PNP + IS=750.00E-15 00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 000E-3 + RB=1.2842 + RC=49.315E-3 315E-3 + CJE=98.302E-12 302E-12 + MJE=.58268 + CJC=35.215E-12 215E-12 + MJC=.40433 + TF=348.37E-12 37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 0813E-9 + XTB=1.5000 ... Original
datasheet

1 pages,
5.36 Kb

tr 13005 00E-15 0844E-12 000E-3 315E-3 302E-12 215E-12 37E-12 0813E-9 00E-15 abstract
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Abstract: SPICE PARAMETER QST8 by ROHM TR Div. * QQST8 PNP BJT model * Date: 2006/12/07 .MODEL QQST8 PNP + IS=750.00E-15 00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 000E-3 + RB=1.2842 + RC=49.315E-3 315E-3 + CJE=98.302E-12 302E-12 + MJE=.58268 + CJC=35.215E-12 215E-12 + MJC=.40433 + TF=348.37E-12 37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 0813E-9 + XTB=1.5000 ... Original
datasheet

1 pages,
5.36 Kb

QST8 9049 0844 00E-15 0844E-12 000E-3 315E-3 302E-12 215E-12 37E-12 0813E-9 00E-15 abstract
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Abstract: SPICE PARAMETER 2SB1732 2SB1732 by ROHM TR Div. * Q2SB1732 Q2SB1732 PNP BJT model * Date: 2006/12/07 .MODEL Q2SB1732 Q2SB1732 PNP + IS=750.00E-15 00E-15 + BF=454.02 + VAF=17.700 + IKF=1.4117 + ISE=750.00E-15 00E-15 + NE=1.9049 + BR=47.150 + VAR=100 + IKR=12.375 + ISC=1.0844E-12 0844E-12 + NC=3.4598 + NK=.48699 + RE=60.000E-3 000E-3 + RB=1.2842 + RC=49.315E-3 315E-3 + CJE=98.302E-12 302E-12 + MJE=.58268 + CJC=35.215E-12 215E-12 + MJC=.40433 + TF=348.37E-12 37E-12 + XTF=33.341 + VTF=34.857 + ITF=13.005 + TR=4.0813E-9 0813E-9 + XTB=1.5000 ... Original
datasheet

1 pages,
5.37 Kb

2SB1732 tr 13005 Q2SB1732 00E-15 0844E-12 000E-3 315E-3 302E-12 215E-12 37E-12 0813E-9 2SB1732 abstract
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