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S-8550AA-M5T1U SII Semiconductor Corporation Switching Regulator visit Digikey Buy
S-8550AA-I8T1U SII Semiconductor Corporation Switching Regulator visit Digikey Buy
S-8550AA-M5T1G SII Semiconductor Corporation Switching Controller, 1.2A, 1380kHz Switching Freq-Max, CMOS, PDSO5, LEAD FREE, SOT-23, 5 PIN visit Digikey Buy
S-8550AA-I8T1G SII Semiconductor Corporation Switching Controller, 1.2A, 1380kHz Switching Freq-Max, PDSO8, LEAD FREE, SNT-8 visit Digikey Buy
MMSS8550-H-TP Micro Commercial Components Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey Buy
MMSS8550-L-TP Micro Commercial Components Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, LEAD FREE, PLASTIC PACKAGE-3 visit Digikey Buy

BR S8550

Catalog Datasheet MFG & Type PDF Document Tags

Transistor S8550 2TY

Abstract: sot-23 Marking 2TY High Collector Current.(IC= -500mA S8550 Pb Lead-free Complementary To S8050. Excellent HFE , S8550 Package Code 2TY SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol , Production specification Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25 S8550 , voltage V(BR)CBO IC=-100A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
BL Galaxy Electrical
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Transistor S8550 2TY sot-23 Marking 2TY Transistor 2TY transistor s8550 S8550 equivalent SOT-23 2ty BL/SSSTC080 3000/T

Transistor S8550 2TY

Abstract: S8050 2TY -23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES Complimentary to S8050 2. EMITTER 3. COLLECTOR , otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC = -100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN MAX UNIT -40 V IC =-1mA, IB=0 -25 V V(BR)EBO IE= -100μA, IC , (1) L H 120-200 200-350 A,Apr,2011 Typical Characteristics S8550 A,Apr,2011
Jiangsu Changjiang Electronics Technology
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S8050 2TY transistors s8550

S8550 equivalent

Abstract: S8550 MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# S8550 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S8550 Pin Configuration Bottom View C B PNP Silicon , Vdc - 1.2 Vdc - 1.4 Vdc OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO
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S8550 DATASHEET BR S8550 transistor TO-92 S8550 S8550 applications s8550 PNP TRANSISTOR f-30MHz

transistors s8550

Abstract: S8550 PNP General Purpose Transistors TO-92 * "G" Lead(Pb)-Free 1. EMITTER 2. BASE 3 , mAdc, IB=0) V(BR)CEO -25 - Vdc Collector-Base Breakdown Voltage (IC= -100 µAdc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE= -100 µAdc, IC=0) V(BR)EBO , = -3.0Vdc, I C=0) IEBO - -0.1 uAdc WEITRON http://www.weitron.com.tw S8550 ELECTRICAL , 160-300 S8550 WEITRON http://www.weitron.com.tw S8550 TO-92 Outline Dimensions unit:mm E
Weitron
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270TYP

Transistor 2TY

Abstract: Transistor S8550 2TY -23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES Complimentary to S8050 2. EMITTER 3. COLLECTOR , otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC = -100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN MAX UNIT -40 V IC =-1mA, IB=0 -25 V V(BR)EBO IE= -100μA, IC , H 120-200 200-350 MHz Typical Characteristics S8550 Jiangsu Changjiang
Jiangsu Changjiang Electronics Technology
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marking 2TY S8550 2TY 2ty transistor Transistor+2TY 2ty sot23

Transistor 2TY

Abstract: Transistor S8550 2TY S8550 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A 2TY Dimensions in inches and (millimeters) MARKING : MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage , current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain , S8550 SOT-23 Transistor(PNP) Typical Characteristics -
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2TY marking s8550 sot-23 S8550 sot 23 2TY Transistor MARKING

transistor TO-92 S8550

Abstract: S8550 MCC Features · · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# S8550 TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S8550 PNP Silicon Transistors TO-92 A E Pin Configuration C BE Min 40 25 5.0 , Range C 120-200 OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO ON CHARACTERISTICS
Micro Commercial Components
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max 550 transistor S8550 D

transistor TO-92 S8550

Abstract: S8550 transistor S8550 TRANSISTOR (PNP) TO-92 1. EMITTER FEATURE Excellent hFE linearity 2. BASE 3 , Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector , 85-160 120-200 160-300 300-400 Typical Characteristics S8550 Jiangsu Changjiang
Jiangsu Changjiang Electronics Technology
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S8550 transistor equivalent S8550

S8550 equivalent

Abstract: S8550 DATASHEET MCC S8550 S8550-B S8550-C S8550-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components Features · · · · · · TO , Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking: S8550 , 0.1 uAdc - 0.2 uAdc - 0.1 B Units uAdc OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Collector-Base Breakdown Voltage (IC=100uAdc, IE =0
Micro Commercial Components
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s8550d S8550D Transistor TO-92 s8550 c S8550C free transistor equivalent book s8550 s8550 transistor datasheet

BR S8550

Abstract: s8550 S8550(PNP) TO-92 Bipolar Transistors 1. EMITTER 2. BASE 3. COLLECTOR TO-92 Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Value -40 -25 -5 -500 625 150 -55-150 Units V V V mA mW Dimensions in inches and (millimeters , , IC=-20mA, 150 50 -0.6 -1.2 V V MHz Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) Test , =30MHz CLASSIFICATION OF hFE(1) Rank Range B 85-160 C 120-200 D 160-300 D3 300-400 S8550(PNP
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s8550 to92

Transistor S8550 2TY

Abstract: marking 2ty -23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES Complimentary to S8050 2. EMITTER 3. COLLECTOR , specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC = -100A, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN MAX UNIT -40 V IC =-1mA, IB=0 -25 V V(BR)EBO IE= -100A, IC=0 -5 V , MHz Typical Characteristics S8550 Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
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transistor S8050 2TY SOT S8050 SOT-23 S8050 TRANSISTOR

s8550 transistor

Abstract: transistor s8550 S8550 S8550 TRANSISTOR (PNP) TO-92 FEATURE Power dissipation PCM: 1. EMITTER , (BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55 , ) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100µA , IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1 mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off
WEJ Electronic
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s8550transistor S-8550 Transistor S8550 d

transistor s8550

Abstract: BR S8550 MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# S8550 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb , junction temperature range: -55OC to +150 OC Marking Code: S8550 PNP Silicon Transistors TO-92 A E , ) Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) Rank Range C 120-200 OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 85 40
Micro Commercial Components
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transistor TO-92 S8550

Abstract: s8550 MCC Features · · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# S8550 TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: S8550 PNP Silicon Transistors TO-92 A E Pin Configuration C BE Min 40 25 5.0 , Range B 85-160 C 120-200 OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO ON
Micro Commercial Components
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S8550

Abstract: 2s8550 S8550 PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Dim Collector Current , V(BR)CBO IC= -100A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V , specification will not be informed individual Page 1 of 2 S8550 PNP Silicon Elektronische Bauelemente
SeCoS
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2s8550 s8550 d h S8050 pnp S8050 D s8050 d h s8050 sot 23

s8550 PNP TRANSISTOR

Abstract: S8550 applications MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# S8550 Features · · · · · · TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking: S8550 PNP Silicon Transistors TO-92 A E · , Units Vdc Vdc Vdc uAdc uAdc uAdc D E B OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO
Micro Commercial Components
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transistor s8550

Abstract: transistor TO-92 S8550 S8550 TO-92 Plastic-Encapsulate Transistors Transistor(PNP) FEATURE Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :-0.5 A Collector-base voltage V (BR)CBO :-40 V , Symbol Test conditions MIN MAX UNIT Collector-base breakdown v oltage V (BR)CBO Ic=-100 A, I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO Ic=-0.1 mA, I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100 A, I C =0 -5 V Collector
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01ah

Transistor S8550 2TY

Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR (PNP) 1. BASE FEATURES Complimentary to S8050 2. EMITTER 3. COLLECTOR , V(BR)CBO IC = -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V , 120-200 200-350 300-400 C,Mar,2013 S8550 Typical Characteristics IC -90 VCE â'"â
Jiangsu Changjiang Electronics Technology
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s8550

Abstract: s8550 PNP TRANSISTOR TRANSISTOR (PNP) S8550 TO-92 FEATURES Power dissipation PCM : 0.625 WTamb=25 Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 CHARACTERISTICSTamb=25 ELECTRICAL Parameter Collector-base Symbol , unless otherwise specified Test conditions MIN TYP MAX UNIT V(BR)CBO Ic= -100A , IE=0 - 40 V V(BR)CEO Ic=- 0.1 mA IB=0 V V(BR)EBO IE=-100A IC=0 - 25 -5
Wing Shing Computer Components
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S8550 TO-92

j3y transistor

Abstract: .j3y JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol , V(BR)CBO IC= 100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V Collector
Jiangsu Changjiang Electronics Technology
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j3y transistor SOT-23 J3Y transistor J3Y MARKING J3Y
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