BLL1214-250 |
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Philips Semiconductors
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L-band radar LDMOS transistor |
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Original |
PDF
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BLL1214-250 |
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Philips Semiconductors
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L-Band Radar LDMOS Transistor |
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Original |
PDF
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BLL1214-250,112 |
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NXP Semiconductors
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L-band radar LDMOS transistor - Application: L-band Radar ; Description: L-Band Radar LDMOS RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 50 %; Frequency: 1200 - 1400 MHz; Load power: 250 W; Operating voltage: 36 VDC; Power gain: 13 dB; Pulse width: 1000 us; Package: SOT502A (LDMOST); Container: Blister pack |
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Original |
PDF
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BLL1214-250R |
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NXP Semiconductors
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LDMOS L-band radar power transistor |
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Original |
PDF
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BLL1214-250R,112 |
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NXP Semiconductors
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BLL1214-250R - L-band radar LDMOS transistor, SOT502A Package, Standard Marking, ICS Tube - DSC Bulk Pack |
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Original |
PDF
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BLL1214-35 |
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Philips Semiconductors
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L-band radar LDMOS driver |
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Original |
PDF
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BLL1214-35,112 |
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NXP Semiconductors
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L-band radar LDMOS driver transistor - Application: L-band Radar ; Description: L-Band Radar LDMOS RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 1200 - 1400 MHz; Load power: 35 W; Operating voltage: 36 VDC; Power gain: 14 dB; Pulse width: 1000 us; Package: SOT467C (LDMOST); Container: Blister pack |
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Original |
PDF
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