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    BLF6G22LS-75,118 Search Results

    BLF6G22LS-75,118 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLF6G22LS-75,118 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 30.5 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 17 W; Package material: SOT502B ; Power gain: 18.7 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" Original PDF
    BLF6G22LS-75,118 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF