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    BLF6G22LS-100,112 Search Results

    BLF6G22LS-100,112 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLF6G22LS-100,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Blister pack Original PDF
    BLF6G22LS-100,112 NXP Semiconductors BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
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    BLF6G22LS-100,112 Price and Stock

    Ampleon BLF6G22LS-100,112

    RF MOSFET LDMOS 28V SOT502B
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