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Part : BLF6G10S-45,112 Supplier : AMP Manufacturer : Avnet Stock : - Best Price : $42.59 Price Each : $46.59
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BLF6G10S-45 Datasheet

Part Manufacturer Description PDF Type
BLF6G10S-45 NXP Semiconductors UHF power LDMOS transistor - Application: CW and W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 60@CW 6@W-CDMA %; Frequency: 800-1000 MHz; Output power: 45@CW 1@W-CDMA W; Package material: SOT608B ; Power gain: 20@CW 21@W-CDMA dB Original
BLF6G10S-45 NXP Semiconductors BLF6G10 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original
BLF6G10S-45,112 NXP Semiconductors UHF power LDMOS transistor - Application: CW and W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 60@CW 6@W-CDMA %; Frequency: 800-1000 MHz; Output power: 45@CW 1@W-CDMA W; Package material: SOT608B ; Power gain: 20@CW 21@W-CDMA dB; Package: SOT608B (CDFM2); Container: Bulk Pack Original
BLF6G10S-45,112 NXP Semiconductors BLF6G10 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original

BLF6G10S-45

Catalog Datasheet MFG & Type PDF Document Tags

D2375

Abstract: BLF6G10S-45 BLF6G10S-45 UHF power LDMOS transistor Rev. 01 - 23 February 2007 Preliminary data sheet 1 , 800 MHz to 1000 MHz frequency range. BLF6G10S-45 NXP Semiconductors UHF power LDMOS , Name BLF6G10S-45 Description Version - ceramic earless flanged package; 2 leads , 12.5 W 1.7 K/W BLF6G10S-45_1 Preliminary data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 - 23 February 2007 2 of 10 BLF6G10S-45 NXP Semiconductors UHF power LDMOS
NXP Semiconductors
Original
D2375 RF35
Abstract: BLF6G10S-45_3 20100120 Product data sheet - BLF6G10S-45_2 Modifications: â'¢ â'¢ â'¢ â , disclaimer added. BLF6G10S-45_2 20090210 Product data sheet - BLF6G10S-45_1 BLF6G10S-45_1 , BLF6G10S-45 Power LDMOS transistor Rev. 03 â'" 20 January 2010 Product data sheet 1 , substances (RoHS) BLF6G10S-45 NXP Semiconductors Power LDMOS transistor 1.3 Applications Ì RF , Name Description Version BLF6G10S-45 - ceramic earless flanged package; 2 leads NXP Semiconductors
Original
2002/95/EC
Abstract: data sheet Change notice Supersedes BLF6G10S-45_3 BLF6G10S-45_2 BLF6G10S-45_1 Document ID BLF6G10S-45 v.4 Modifications: BLF6G10S-45_3 BLF6G10S-45_2 BLF6G10S-45_1 · Update of Package Outline drawing. 20100120 , BLF6G10S-45 Power LDMOS transistor Rev. 4 - 11 March 2013 Product data sheet 1. Product , restriction of hazardous substances (RoHS) NXP Semiconductors BLF6G10S-45 Power LDMOS transistor , flange. 3. Ordering information Table 3. Ordering information Package Name BLF6G10S-45 Description NXP Semiconductors
Original

BLF6G10S-45

Abstract: TRANSISTOR SMD CODE 6.8 BLF6G10S-45 Power LDMOS transistor Rev. 02 - 10 February 2009 Product data sheet 1 , Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10S-45 , BLF6G10S-45 - ceramic earless flanged package; 2 leads SOT608B 4. Limiting values Table 4 , junction to case Tcase = 80 °C; PL = 12.5 W 1.7 K/W BLF6G10S-45_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 - 10 February 2009 2 of 10 BLF6G10S-45 NXP
NXP Semiconductors
Original
TRANSISTOR SMD CODE 6.8 smd transistor f3 65

d2375

Abstract: BLF6G10S-45 BLF6G10S-45 Power LDMOS transistor Rev. 03 - 20 January 2010 Product data sheet 1. Product , /95/EC, regarding restriction of hazardous substances (RoHS) BLF6G10S-45 NXP Semiconductors , 3. Ordering information Type number Package Name Description Version BLF6G10S-45 , junction to case Tcase = 80 °C; PL = 12.5 W 1.7 K/W BLF6G10S-45_3 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 03 - 20 January 2010 2 of 10 BLF6G10S-45 NXP
NXP Semiconductors
Original

BLF188XRS

Abstract: BLF574XR,112 -135RN BLF6G10LS-200RN BLF6G10LS-260PRN BLF6G10S-45 BLF6G13L-250P BLF6G13LS-250P BLF6G15L-250PBRN BLF6G15L
NXP Semiconductors
Original
BLF188XRS BLF574XR,112 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600

QUBiC4X

Abstract: BGX7300 BLF6G10LS-200RN BLF6G10LS-200RN BLF6G10S-45 BLF6G10S-45 1/2 BLF6G10L(S)-260PRN BLF6G10-135RN BLF8G10LS , -100 BLF7G27LS-100 BLF6G38-50 1/2 BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G10LS-200RN BLF6G10S-45 2x BLF6G10S-45 1
NXP Semiconductors
Original
HTQFP100 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 BLP7G10S-140P printed antenna dcs 1800 HVQFN64 HTQFP80 LQFP48

BLF3G21-30

Abstract: SOT89-5A 2C W-CDMA 869 - 894 26 21 28.5 - -40 - - - 0.56 BLF6G10S-45
NXP Semiconductors
Original
ACPR400 ACPR600 BLF6G10LS-200R BLF6G10LS-160 BLC6G10LS-160 BLC6G10-160 BLF3G21-30 SOT89-5A blf2043f BLF6G22LS-140 SOT502B

BGA7133

Abstract: BGA7130 -135P Now 28 tbd tbd 3-WAY BLF6G10S-45 2x BLF6G10S-45 Q2, 2010 47 28 17.5
NXP Semiconductors
Original
BGA7133 BGA7130 BGA7203 qubic4 BLF7G22-130 SOT502 DAC1401D125 DAC1208D DAC1205D DAC1203D160 DAC1201D125 DAC1008D

Pallet VHF Power Amplifier

Abstract: BLF578 ) (%) (dBc) 800-1000MHz BLF6G10S-45 SOT608B I/ O 2C-WCDMA 800-1000 28 1 23
NXP Semiconductors
Original
Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLF87 BLF57 BLF6G27LS-135 IS-95 BLF6G27-135 BLF6G27S-45
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