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BJE 80 diode

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BJE 80 diode

Abstract: DIODE BJE 80 . pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 8 , 3V micro computer compatible input G "L" active level input G With input diode G Wide operating , connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from "H" input to , circuit is "H" and the other are "L" to save power consumption. The diode is inserted to prevent such
Mitsubishi
Original

BJE 80 diode

Abstract: DIODE BJE . pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63836FP/KP 8-channel sinkdriver , ) = 500mA) G 3V micro computer compatible input G "L" active level input G With input diode G With , clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of current from the input to the Vcc
Mitsubishi
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20P2N-A BJE 80 diode DIODE BJE 20P2N M63836FP M63836KP 20P2E-A

Seven Transistor Array PNP

Abstract: bje resistor . pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 7 , input G "L" active level input G With input diode G Wide operating temperature range (Ta = ­40 to , transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from "H" input to the Vcc and the "L" input circuit is activated, in , consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driving 500mA
Mitsubishi
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Seven Transistor Array PNP bje resistor npn darlington array M63832GP M63832KP KP500 M63832GP/KP 16P2S-A 16P2Z-A

bje resistor

Abstract: Seven Transistor Array PNP ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame , compatible input G "L" active level input G With input diode G Wide operating temperature range (Ta = ­40 , PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from "H" input to the Vcc and the "L" input circuit is , power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of
Powerex
Original
7-channel sinkdriver 4500 microcomputer

BJE 80 diode

Abstract: DIODE BJE 80 . pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63830P/FP 4-channel sinkdriver , micro computer series compatible input G With clamping diodes G With input diode G Wide operating , of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of current from the
Mitsubishi
Original
DIODE BJE 80 M63830FP M63830P pnp DARLINGTON TRANSISTOR ARRAY 105 35K 102 16P2N-A M63830FP/P

BJE 80 diode

Abstract: DIODE BJE 80 ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63830P/FP 4 , ) = 1.5A) G 3V micro computer series compatible input G With clamping diodes G With input diode G , input and the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of
Powerex
Original
89COM

BJE 80 diode

Abstract: pnp 8 darlington array ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame , (max) = 500mA) G 3V micro computer compatible input G "L" active level input G With input diode G , 3.5k is connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from "H" , 8 circuit is "H" and the other are "L" to save power consumption. The diode is inserted to prevent
Powerex
Original
pnp 8 darlington array 8-channel darlington array M63834FP M63834KP M63834GP M63834FP/KP M63834GP/KP
Abstract: . pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63836FP/KP 8-channel sinkdriver , (max) = 500mA) G 3V micro computer compatible input G â'Lâ' active level input G With input diode , of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of current from the -
Original
Abstract: . pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63830P/FP 4-channel sinkdriver , 3V micro computer series compatible input G With clamping diodes G With input diode G Wide , the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of current -
Original

BJE 80 diode

Abstract: DIODE BJE 80 ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63836FP/KP , input G With input diode G With clamping diodes G Wide operating temperature range (Ta = ­40 to +85°C , and the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended to prevent the flow of
Powerex
Original

BJE 80 diode

Abstract: CM800HA-66H MITSUBISHI HVIGBT MODULES Y AR LIMIN . ation nge. pecific ct to cha bje final s not , ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame , °C - - - - - - - - - - - - - - - - - - 4.40 4.80 80 8.0 2.4 , , Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode , ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som PRE
Mitsubishi
Original
CM800HA-66H 018K/W 036K/W

BJE 80 diode

Abstract: CM800HA-50H MITSUBISHI HVIGBT MODULES Y AR LIMIN . ation nge. pecific ct to cha bje final s not , ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame , 3.20 3.60 80 8.8 2.7 3.6 - - - - 2.90 - 170 - - 0.008 0.5 4.16 - - - , , Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode , ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som PRE
Mitsubishi
Original
CM800HA-50H

CM600HB-90H

Abstract: bipolar transistor 124 e MITSUBISHI HVIGBT MODULES Y AR LIMIN . ation nge. pecific ct to cha bje final s not , LIMIN . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr , - - 3.00 3.30 108 8.0 2.4 5.4 - - - - 4.00 - 240 - - 0.010 0.5 3.90 , collector free-wheel diode. Junction temperature (Tj) should not increase beyond 125°C. Pulse width and , ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame
Mitsubishi
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CM600HB-90H bipolar transistor 124 e 015K/W 030K/W

T22N

Abstract: aRm3 bje is not are su is tice:Th metric limits No para Some ERROR CORRECTION WITH VARIABLE , 74 DAO4 75 DAO5 76 DAO6 77 DAO7 78 ELO0 79 VDDO 80 VSSI PIN CONFIGURATION (TOP , MITSUBISHI ICs (LSI) ARY IMIN PREL ation. . specific ct to change a final bje is not are su , (LSI) ARY IMIN PREL ation. . specific ct to change a final bje is not are su is tice , Output voltage Input protection diode current Output parasitic diode current IO Output current
Mitsubishi
Original
M64403FP T22N aRm3 BJE 61 Z65T D181
Abstract: schnellem Trench/Feldstop IGBT4 und Emitter Controlled Diode EconoDUALTM2 module with fast trench/fieldstop IGBT4 and Emitter Controlled diode FF200R12MT4 '() * '. * '. * +, +,2 '() * 3 +, +,2 '() * 3 + , @`' E 4@`' c , '()* +,W $SPh BJa. BJ.e 4 G NTC-Widerstand / NTC-thermistor i 9 A A ` ` ` ` ` ` A & lmm & , ,'4 ! y ! 2 " F! E O #- E EU ^ W E cdSPIHP * EU ^ W BJ.e VH./ 9 R .z{//z 2 N Infineon Technologies
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igbt for HIGH POWER induction heating

Abstract: igbt 600a output ac MITSUBISHI HVIGBT MODULES Y AR LIMIN . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som CM600HB-90H PRE HIGH POWER , LIMIN . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr , 3.30 108 8.0 2.4 5.4 - - - - 4.00 - 240 - - 0.010 0.5 3.90 - - - - - , , Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode
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igbt for HIGH POWER induction heating igbt 600a output ac circuit diagram induction heating

TRANSISTOR Q 667

Abstract: CM2400HC-34H MITSUBISHI HVIGBT MODULES Y AR LIMIN . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som CM2400HC-34H PRE HIGH POWER , ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som PRE , N·m kg VGE = 0V VCE = 0V DC, TC = 80°C Pulse (Note 1) Pulse TC = 25°C, IGBT part , , Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode
Mitsubishi
Original
TRANSISTOR Q 667 17800

CM1600HC-34H

Abstract: MITSUBISHI HVIGBT MODULES Y AR LIMIN . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som CM1600HC-34H PRE HIGH POWER , MITSUBISHI HVIGBT MODULES Y AR LIMIN . ation nge. pecific ct to cha bje final s not a its are , - Mass Conditions VGE = 0V VCE = 0V DC, TC = 80°C Pulse Ratings 1700 ±20 1600 3200 , free-wheel diode. Junction temperature (T j) should not increase beyond 150°C. Pulse width and repetition
Mitsubishi
Original

FF300R12KT3

Abstract: BJE 80 diode C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und EmCon High Efficiency Diode 62mm C-series module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter , . 4@`& E 4@`& c , BJ.e 3 * 3 ? E E Technische Information / technical information FF300R12KT3 , , V % % 9 ; % ! % 9 ; % F! &HBd ; G _ F BJ.e EU ^ W ! VH./ 3 OT
Infineon Technologies
Original

FF300R12KE4

Abstract: C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten , ( EU ^ W E : BJacdSPIHP ( 1 EU ^ W BJ-e 1 1 7 7 E E Technische , F 1 ) %&' ( )*+ %&' ( )*+ %&' ( ) *+ , , , cdSPIHP ( 2 EU ^ W BJ-e 1 ) 1 , O %HBd < G _ F BJ-e EU ^ W VH-. 1 OT EU ^ W E cdSPIHP ( G $ A + R
Infineon Technologies
Original
FF300R12KE4
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