BG5412K |
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Infineon Technologies
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Dual Intelligent Switching; Package: PG-SOT363-6; ID (max): 20.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 24.0 dB; F (typ): 1.1 dB; |
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PDF
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BG5412KE6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT-363 |
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Original |
PDF
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BG5412KE6327HTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT-363 |
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Original |
PDF
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BG5412KH6327 |
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Infineon Technologies
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RF FETs, Discrete Semiconductor Products, MOSFET N-CH DUAL 8V 25MA SOT363 |
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Original |
PDF
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BG5412KH6327XTSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH DUAL 8V 25MA SOT363 |
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Original |
PDF
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