BFY196 |
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Infineon Technologies
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BFY196 |
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Original |
PDF
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BFY196 |
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Siemens
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HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
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Original |
PDF
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BFY196 (ES) |
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Infineon Technologies
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HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 12.0 V; IC(max): 100.0 mA; Ptot (max): 700.0 mW; fT (typ): 6.5 GHz; |
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Original |
PDF
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BFY196H |
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Infineon Technologies
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HiRel NPN Silicon RF Transistor |
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Original |
PDF
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BFY196H |
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Siemens
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HiRel NPN silicon RF transistor |
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Original |
PDF
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BFY196 (P) |
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Infineon Technologies
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HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 12.0 V; IC(max): 100.0 mA; Ptot (max): 700.0 mW; fT (typ): 6.5 GHz; |
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Original |
PDF
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BFY196P |
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Infineon Technologies
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HiRel NPN Silicon RF Transistor |
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Original |
PDF
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BFY196P |
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Siemens
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HiRel NPN silicon RF transistor |
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Original |
PDF
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BFY196 (S) |
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Infineon Technologies
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HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; VCEO (max): 12.0 V; IC(max): 100.0 mA; Ptot (max): 700.0 mW; fT (typ): 6.5 GHz; |
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Original |
PDF
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BFY196S |
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Infineon Technologies
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HiRel NPN Silicon RF Transistor |
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Original |
PDF
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BFY196S |
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Siemens
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HiRel NPN silicon RF transistor |
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Original |
PDF
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