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Part : BFW-10 Supplier : Eaton Manufacturer : Avnet Stock : - Best Price : $93.5070 Price Each : $105.8849
Part : ABFW101-R Supplier : IDEC Manufacturer : Newark element14 Stock : - Best Price : $20.19 Price Each : $25.39
Part : BFW-10 Supplier : EATON Manufacturer : Newark element14 Stock : - Best Price : $139.83 Price Each : $139.83
Part : BFW-10 Supplier : EATON Manufacturer : Master Electronics Stock : 2 Best Price : $94.35 Price Each : $105.13
Part : ABFW101-B Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $14.93 Price Each : $16.85
Part : ABFW101-G Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $14.93 Price Each : $16.85
Part : ABFW101-R Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $14.95 Price Each : $16.87
Part : ABFW101N-R Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $14.93 Price Each : $16.85
Part : ABFW102-G Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $19.24 Price Each : $21.72
Part : ABFW102-R Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $19.24 Price Each : $21.72
Part : ABFW102-Y Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $19.24 Price Each : $21.72
Part : ABFW102N-R Supplier : IDEC Manufacturer : Sager Stock : - Best Price : $19.24 Price Each : $21.72
Part : BFW-10 Supplier : EATON Manufacturer : Sager Stock : - Best Price : $99.70 Price Each : $110.39
Part : BFW-10 Supplier : EATON Manufacturer : Walker Industrial Products Stock : - Best Price : $105.13 Price Each : $105.13
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BFW10 Datasheet

Part Manufacturer Description PDF Type
BFW10 Philips Semiconductors N-channel Silicon FET Original
BFW10 Continental Device India Metal Can and Epoxy Transistors Scan
BFW10 Continental Device India N Channel JFET Scan
BFW10 Motorola VHF/UHF Amplifier(N-Channel, Depletion) Scan
BFW10 Motorola VHF-UHF Amplifier Scan
BFW10 Mullard Quick Reference Guide 1977/78 Scan
BFW10 N/A Shortform Transistor PDF Datasheet Scan
BFW10 N/A Basic Transistor and Cross Reference Specification Scan
BFW10 N/A Basic Transistor and Cross Reference Specification Scan
BFW10 N/A Shortform Datasheet & Cross References Data Scan
BFW10 N/A Catalog Scans - Shortform Datasheet Scan
BFW10 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BFW10 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BFW10 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BFW10 N/A Semiconductor Master Cross Reference Guide Scan
BFW10 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BFW10 N/A Shortform Electronic Component Datasheets Scan
BFW10 National Semiconductor Shortform National Semiconductor Datasheet Scan
BFW10 Texas Instruments Discrete Devices 1978 Scan
BFW100K5 Vishay Resistor: Carbon Film: 100K: Original
Showing first 20 results.

BFW10

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction , ) -vGS0 max. 30 V Total power dissipation up to Tamb = 25 °C ptot max. 250 mW Drain current BFW10 , December 1990 125 hbSB^ai 0D35771 TT2 This Material Copyrighted By Its Respective Manufacturer BFW10 , bbSBTBl 0G35772 This Material Copyrighted By Its Respective Manufacturer BFW10 BFW11 BFW10 BFW11 , Material Copyrighted By Its Respective Manufacturer BFW10 BFW11 BFW1C -
OCR Scan
BF 331 TRANSISTORS bfw10 equivalent bfw10 transistor BFW10 in drain resistance BFW118 BFW10 n-channel
Abstract: 711002b 00b7bb4 IbS â IPHIN BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel , December 1990 281 This Material Copyrighted By Its Respective Manufacturer 711002b DDt.7bbS DTI BFW10 , FETs IPHIN BFW10 BFW11 CHARACTERISTICS Tj = 25 °C unless otherwise specified Gate cut-off , BFW10 BFW11 â'"'gss -'gss < < 0.1 0.5 0.1 0.5 nA m 'dss > < 8 20 4 10 ma mA -vqs > < 2.0 7.5 v v , 283 This Material Copyrighted By Its Respective Manufacturer 7110Ã"Eb 00fc,7bb7 T7M â  PHIN BFW10 -
OCR Scan
bfw11 equivalent 1Z62 electromedical 7z08
Abstract: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction , max. BFW10 1 BFW11 Drain current V D S= 1 5 V ; V GS = 0 â'˜ DSS > < 8 20 , BFW10 BFW11 y v . RATINGS Limiting values in accordance w ith the Absolute Maximum System , 126 December 1990 \ r bbS3=i31 0035772 W N-channel silicon FETs J BFW10 BFW11 , . " \ / -December 1990 ^53^31 003.5773 fl75 127 BFW10 BFW11 7 Z 0 -
OCR Scan
003S774 7Z08474 DQ35775 53T31 DQ3S77 003577T
Abstract: J V. BFW10 BFW11 N-CHANNÃ'L SILICON FETS Symmetrical n-channel silicon planar epitaxial junction , voltage f = 10 Hz ±VDS max. 30 V -VQSO max. 30 V Ptot max. 250 mW BFW10 BFW11 'dss > 8 4 mA , BFW10 BFW11 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134 , BFW10 BFW11 CHARACTERISTICS Tj = 25 °C unless otherwise specified Gate cut-off currents -VG£; = 20 V , / * Measured under pulsed conditions. December 1990 127 BFW10 BFW11 128 July 1971 N-channol silicon FETs BFW10 -
OCR Scan
transistors BFW10 400M C15-015
Abstract: BFW10 (VqS = 15 Vdc, Id = 0.5 nAdc) BFW11 VGS(off) â'" â'" CO CO Vdc Gate Reverse Current (VGS = 20 Vdc, Vds = 0) IGSS â'" â'" 0.1 nAdc Gate-Source Voltage (VDS = 15 Vdc, Id = 400 jiAdc) BFW10 VGS 2 â'" 7.5 , Zero-Gate Voltage Drain Current BFW10 (Vds = 15 Vdc, VGS = o) BFW11 loss 8 4 â'" 20 10 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transadmittance BFW10 (Vds = 15 Vdc, VGS = o, f = 1 kHz) BFW11 Yfs 3.5 3.0 â'" 6.5 6.5 mmhos Output Admittance BFW10 (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) BFW11 Vos _ _ 85 50 ^imhos -
OCR Scan
2N4416 BFW10 JFET bfw11 jfet jfet bfw10 EQUIVALENT OF bfw10 BFW11 circuit BFW11 MOTOROLA
Abstract: bfw10 bfw11 CASE 20-03, STYLE 1 TO-72 (TO-206A) MAXIMUM RATINGS Rating Symbol Value Unit , Cutoff Voltage BFW10 (Vqs = 15 Vdc. Id = 0.5 nAdc) BFW11 VGS(off) â'" â'" 00 CO Vdc Gate Reverse Current (VGS = 20 Vdc, VDS = 0) IGSS â'" â'" 0.1 nAdc Gate-Source Voltage (VDS = 15 Vdc, Id = 400 ^Adc) BFW10 , CHARACTERISTICS Zero-Gate Voltage Drain Current BFW10 (VDS = 15 Vdc, Vqs = 0) BFW11 'DSS CO â'" 20 10 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transadmittance BFW10 (VDS = 15 Vdc, VQS = 0, f = 1 kHz} BFW11 Yfs -
OCR Scan
SYMBOL BFW10 SYMBOL OF BFW10 JFET BFW10 motorola VS1001 7Z08476
Abstract: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction , ) -vGSO max. 30 V Total power dissipation up to Tam|-, = 25 °C ptot max. 250 mW BFW10 BFW11 , disc). December 1990 125 BFW10 BFW11 ratings Limiting values in accordance with the Absolute , to ambient Rthj-a = 590 K/W N-channel silicon FETs BFW10 BFW11 CHARACTERISTICS Tj = 25 °C , ;Tamb = 25°C f= 10 Hz BFW10 BFW11 -'gss < 0.1 0.1 nA -'gss < 0.5 0.5 M A 'dss > 8 4 mA < 20 10 -
OCR Scan
7Z08475 V0S-15V
Abstract: MOTOROLA SC-CXSTRS/R F> DF|b3L.7254 OOûSbaS t . |~ 6367254 M OT O RO L A SC CXSTRS/R F) 96D 8 2 6 2 5 T - 3/-3-5" D BFW10 BFW11 C A SE 20-03, STYLE 1 TO-72 (TO-2Q6A) M A X IM U M R A T IN G S R a tin g D rain -So u rc e Voltage Drain-Gate Voltage Reverse G ate-Source Voltage Forward Gate Current Total Device D issipation @ T a = 25°C Derate above 25 , (XSTRS/R F) 96 D 82626 D BFW10, BFW11 F IG U R E 1 - 100 M H z and 4 0 0 M H z N E U -
OCR Scan
bfw 11 bfw 10 bfw 96 JFET BFW 11
Abstract: BFW10 Transistors N-Channel JFET Military/High-RelN V(BR)DSS (V)30 V(BR)GSS (V)30 I(D) Max. (A)20m I(G) Max. (A)10m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175Ãu I(GSS) Max. (A).1u @V(GS) (V) (Test Condition)20 V(GS)off Min. (V) I(DSS) Max. (A)20m V(GS)off Max. (V)8.0 @Vgs (test) (V)0 @V(DS) (V) (Test Condition)15 @I(D) (A) (Test Condition).5n I(DSS) Min. (A)8m I(DSS) Max. (A)20m @V(DS) (V) (Test Condition)15 r(DS)on Max. (Ohms) g(fs) Min. (S) Trans American Microsemiconductor
Original
Abstract: max max max BFW10 30 30 30 .3 30 10 6 15 .5 .1 20 2 7.5 15 400 6 20 14 3.5 6.5 15 .001 65 15 1 5 -
OCR Scan
Abstract: ; BFU309; BFU310 Discontinued BFW10; BFW11 Discontinued. Replaced by BF245A-C BFW12; BFW13 Philips Semiconductors
Original
2N4393 BC264A BF256C BFR29 BSD211 BSD215 BSV81 j310 replacement j310 equivalent BSV80 2N4091 2N4092 2N4093 2N4391 2N4392
Abstract: Philips Semiconductors Small-signal Field-effect Transistors REPLACED/WITHDRAWN TYPES Replacement list The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4416 2N4416a 2N4856 2N4857 2N4858 2N4859 2N4860 2N4861 BC264A; BC264B; BC264C; BC264D BF246A; BF246B; BF246C; BF247A; BF247B; BF247C BF256A; BF256B; BF256C BF990AR BFR29 BFU308; BFU309; BFU310 BFW10; BFW11 BFW12 -
OCR Scan
BSV79 2n4393 replacement BSD12 BSD212 BSD213 BSD214 BSV78
Abstract: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P channel N N N N N N N N N N N N N N N N N N N N N N N N N _ leaded_ TO-18 TO-71 _ TO-72 BFW13 BFW12 BFW11 BFW10 BF245A BF245B BF245C BF256A BF256B surface-mount BF545A BF545B BF545C BFR30 BFR30 _ main application audio/VHF audio/VHF audio/VHF -
OCR Scan
BF410C BF512 BF861A 7.1 Channel audio amplifier amplifier audio n channel audio J310 Application Note BFT46 BFR31 BF410A BF410B BF410D
Abstract: max max max max BFW10 30 30 30 .3 30 10 6 15 .5 .1 20 2 7.5 15 400 6 20 14 3.5 6.5 15 .001 65 15 -
OCR Scan
Abstract: max max typ max 77 BFW10 30 0.5 8 3500/6500 2.5 300 8-20 T072 78. BFW11 30 0.5 6 3500/6500 2.5 300 -
OCR Scan
BCY57 BCY58VII BCY58VIII 59VIII BCY79VII 79VIII 79-IX BCY 68 59vii BCY 62 BCY58X 78VII 78VIII
Abstract: Package mm max max typ max 77 BFW10 30 0.5 8 3500/6500 2.5 300 8-20 T072 78. BFW11 30 0.5 6 3500 -
OCR Scan
BFW61 59IX BCY 59X 79-VIII bharat T018 79VII
Abstract: BFW10 313 BSP110 437 131 BFW11 313 441 139 BFW12 325 BSP120 BSP121 -
OCR Scan
bs250 bs170 BS170 BS208 BF904 BF904R BF904WR BS250
Abstract: 8 6 2 6 2 6 2 6 2 6 2 6 2 2.5 2.5 2.5 BFW10 BFW11 T072 T072 N N 30 30 0.5 8 0.5 4 3.5 8 3.0 6 5 -
OCR Scan
2N3971 2N5549 2N2497 2N2498 2N2499 2N3329 FET BFW10 N CHANNEL FET BFW10 BFW10 FET FET BFW11 N CHANNEL FET BFW61 2N3824 2N3970 2N3972 2N4856A 2N4857A
Abstract: BF513 BF545A/0 BF545A BF545B BF545C J308 J309 J310 PMBFJ308 PMBFJ309 PMBFJ310 BFW10 BFW11 BFW12 BFW13 -
OCR Scan
OF FET BFW11 OF FET BFW10 BF245A sot23 fet BF245A j310 FET VHF RTA-44D BF245A/0 BF510 BF511 2N3822 2N3823 PMBF4416
Abstract: Small Signal Leaded Devices Field Effect Transistors J-FET (cont.) ±V DS Type 2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C BF256A BF256B BF256C BF410A BF410B BF410C BF410D BFU308 BFU309 BFU310 BFW10 BFW11 BFW12 BFW13 J108 J109 J110 J111 J 112 J 113 J174 J175 J176 J177 J308 J309 J310 PN4391 PN4392 PN4393 PN4416 dss (mA) >50 25-100 8-80 0.5-2.1 2-6.5 6-15 12-25 30-80 60-140 110-250 3-7 6-13 11-18 0.7-3 2.5-7 6-12 10-18 12-60 12-30 24-60 8-20 4-10 1-5 0.2-1.5 >80 >40 >10 -
OCR Scan
BF964S Field Effect Transistors BF96 BF960 BF964 BF965 BF966 BF966S
Abstract: 2N4220A 2N4221 2N4221A 2N4222 2N4222A BFW10 BFW11 2N2386 2N2386A 2N2497 2N2498 2 N2499 2N2500 2N26G8 , · · · · BF350 BF351 BF352 BF353 BF440 BFT10 BFT11 BFW10 BFW11 BFW54 BFW55 BFW56 BFW61 TIS25 TIS26 -
OCR Scan
pin configuration BFW 11
Abstract: Package mm max max typ max 77 BFW10 30 0.5 8 3500/6500 2.5 300 8-20 T072 78. BFW11 30 0.5 6 3500 -
OCR Scan
3N211 F245B BF256 BC264 2N3820 MPF105 U1898E 3N204 3N206 3N213 100-MH
Showing first 20 results.