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OM7623/BFU725F/2400,598 NXP Semiconductors EVAL BOARD FOR BFU725F 2.4GHZ visit Digikey Buy
OM7623/BFU725F/1500,598 NXP Semiconductors EVAL BOARD FOR BFU725F 1.5GHZ visit Digikey Buy

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Part : BFU725F/N1115 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 2,990 Best Price : $0.15 Price Each : $0.18
Part : OM7623/BFU725F-150598 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 1 Best Price : - Price Each : -
Part : OM7623/BFU725F/150598 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 3 Best Price : - Price Each : -
Part : OM7623/BFU725F240598 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 4 Best Price : $248.16 Price Each : $305.4300
Part : BFU725F Supplier : NXP Semiconductors Manufacturer : America II Electronics Stock : 1,040 Best Price : - Price Each : -
Part : BFU725F/N1 Supplier : NXP Semiconductors Manufacturer : RS Components Stock : 1,230 Best Price : £0.0660 Price Each : £0.1170
Part : BFU725F/N1,115 Supplier : NXP Semiconductors Manufacturer : Richardson RFPD Stock : - Best Price : $0.13 Price Each : $0.13
Part : BFU725F/N1,115 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 3,990 Best Price : $0.1443 Price Each : $0.3851
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BFU725F Datasheet

Part Manufacturer Description PDF Type
BFU725F NXP Semiconductors NPN wideband silicon germanium RF transistor - @ f: 2400 MHz; @ f2: 5800 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 70 GHz; Frequency: 0.7 MHz; I<sub>C</sub>: 40 mA; ITO: 19 dBm; P<sub>L</sub>: 8 W; Polarity: NPN ; Socket: LNA ; V<sub>CE</sub>: 2 V; VCEO max: 2.9 V Original
BFU725F NXP Semiconductors BFU725 - TRANSISTOR C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, FLAT PACK-4, BIP RF Small Signal Original
BFU725F NXP Semiconductors A perfect match up to 20 GHz; SiGeC microwave NPN transistor BFU725F Original
BFU725F NXP Semiconductors SiGeC microwave NPN transistor BFU725F (Simplified Chinese version) Original
BFU725F,115 NXP Semiconductors NPN wideband silicon germanium RF transistor Original
BFU725F/N1 NXP Semiconductors BFU6xx/BFU7xx Transistor Starter Kit Users Manual Original
BFU725F/N1 NXP Semiconductors AN11102 - BFU725F/N1 2.4 GHz LNA evaluation board Original
BFU725F/N1 NXP Semiconductors NPN wideband silicon germanium RF transistor Original
BFU725F/N1,115 NXP Semiconductors NPN wideband silicon germanium RF transistor; Package: SOT343N (SO4); Container: Tape reel smd Original
BFU725F/N1,115 NXP Semiconductors BFU725F/N1 - NPN wideband silicon germanium RF transistor, SOT343F Package, Standard Marking, Reel Pack, SMD, 7" Original

BFU725F

Catalog Datasheet MFG & Type PDF Document Tags

BFU725F

Abstract: germanium transistors NPN SiGeC microwave NPN transistor BFU725F A perfect match up to 20 GHz Meet the trend towards higher frequencies. With NXP Semiconductors' latest SiGeC microwave NPN transistor BFU725F, you get high , microwave applications The NPN microwave transistor BFU725F delivers an unbeatable blend of high , GHz range, such as satellite TV receivers and automotive collision avoidance radar. The BFU725F get , addition, with the BFU725F, you don't need a biasing IC or negative biasing voltage. So it's a much more
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germanium transistors NPN SOT343F
Abstract: AN11102 BFU725F/N1 2.4 GHz LNA evaluation board Rev. 1 â'" 28 July 2011 Application note Document information Info Content Keywords LNA, 2.4GHz, BFU725F/N1 Abstract This document explains the BFU725F/N1 2.4GHz LNA evaluation Board. AN11102 NXP Semiconductors BFU725F/N1 , reserved. 2 of 12 AN11102 NXP Semiconductors BFU725F/N1_2.4GHz LNA EVB 1. Introduction The BFU725F/N1 is a wideband Silicon Germanium Amplifier transistor for high speed, low noise applications NXP Semiconductors
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RF LNA 10 GHz

Abstract: LNA DBS SiGeC NPN BFU725F 20GHz NXP Semiconductors SiGeC BFU725F NPN SOT343F 20GHz 0.4dB@1.8GHz,0.67dB@5.8GHz 27.8dB@1.8GHz, 10dB@5.8GHz fT >100 GHz / fMAX >150 GHz SOT343F SiGeC BFU725F RF 10GHz 30GHz BFU725F GaAs RoHS , BiCMOS GPS DECT LNA DBS LNA WLAN CDMA - LNB - SiGeC QUBiC4X GaAs BFU725F GaAs pHEMT IC - BV CEO IC = 1 mA; I B = 0 IC(max) 3.2 V 40 mA fT VCE = 2 V; I C = 25 mA; f = 2 GHz VCE = 2 V; I
NXP Semiconductors
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RF LNA 10 GHz LNA DBS SOT-343F

transistor marking N1

Abstract: LNB ka band : made in Malaysia * = W : made in China BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All , BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 - 13 July 2009 3 , dB f = 12 GHz - 10 dB BFU725F_N1_1 Product data sheet - © NXP B.V. 2009. All , Fig 3. DC current gain a function of collector current; typical values BFU725F_N1_1 Product , BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 - 13 July 2009 6
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transistor marking N1 LNB ka band JESD625-a ka-band mixer 160 germanium transistor Germanium power JESD625-A

BFU725F

Abstract: code marking s20 TRANSISTOR pack package; reverse pinning; 4 leads SOT343F BFU725F_1 Product data sheet © NXP B.V , 0 40 80 120 160 Tsp (°C) Fig 1. Power derating curve BFU725F_1 Product data , = 25 °C IC = 5 mA; VCE = 2 V; S = opt; Tamb = 25 °C BFU725F_1 Product data sheet [1 , maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. BFU725F_1 Product data sheet © NXP B.V , values Fig 5. Transition frequency as a function of collector current; typical values BFU725F_1
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code marking s20 TRANSISTOR germanium rf transistor germanium transistor npn germanium transistor

ku-band lnb

Abstract: SOT363F NXP satellite LNB devices BFU725F and BGA28xx Complete satellite portfolio for all LNB , additions to NXP's leading portfolio for satellite LNB. BFU725F RF transistor The BFU725F is an RF , solution. BFU725F as mixer in Ku-band LNB Power consumption: 2 mA at 5 V Single supply: 3, 5, or 6 V , isolation better than 18 dB BFU725F as 2nd or 3rd stage LNA in Ku-band LNB Power consumption: 11 mA at , stable BFU725F as LNA for C-band LNB Power consumption: 7 mA at 5 V Single supply: 5 or 6 V Noise
NXP Semiconductors
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BGA2865 ku-band lnb SOT363F Multiple output LNB lnb ku smd transistor sot363 SMD Transistor in sot363 BGA28 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850

BFU725F

Abstract: germanium transistors NPN BFU725F NPN wideband silicon germanium RF transistor Rev. 02 - 23 June 2010 Product data , 's BFU725F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data , . Ordering information Type number Package Name BFU725F Description Version - plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F BFU725F Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 - 23 June 2010 2 of 13 BFU725F NXP
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DRO lnb Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference

UAF3000

Abstract: 9.75 GHz oscillator chipset The chipset consists of the TFF1004HN, the UAF3000TS, and the BFU725F. The UAF3000TS is a FET , BFU725F for 2nd LNA stage N 4 emo board available D Designed for use in the Low Noise Block (LNB , /POLARIZATION SWITCHING horizontal 1st STAGE LNA TFF1004 LO_SEL VCC vertical BFU725F 2nd STAGE , with TFF1004HN, UAF3000TS, and BFU725F The BFU725F is an NPN microwave transistor for high-speed , UAF3000TS Conversion gain Gc (dB) 8 BFU725F Input frequency range (GHz) 10.7 to 12.75
NXP Semiconductors
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HVQFN24 UAF3000 9.75 GHz oscillator LNB down converter for Ku band transistor k 975 ku-band pll lnb ku-band lnb satellite VQFN24 110-GH

BGU7003

Abstract: 110GHZ BGU7003 RF MMIC Ñ MMIC Ñ 1.575 GHz0.85 dB Ñ 1.575 GHz20 dB Ñ 110-GHz fT Ñ 5-mA Ñ ESD>1KV Ñ 6-pin SOT891 Ñ Ñ 1 A Ñ Ñ GPS Ñ Ñ CDMA Ñ Ñ / DECT Ñ BGU7003 GPS GPS BGU7003"QUBiC4X" SiGe:C BiCMOS GaAs BGU7003 RF BFU725F Rb BGU7003 BFU725F Vcc BIAS AND ENABLE IN EN GND OUT brb199 BGU7003 circuit BGU7003 in leadless SOT891 C3 V_cc Rb
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110GHZ SOT-891

transistor marking N1

Abstract: Germanium power in Hong Kong * = t : made in Malaysia * = W : made in China Type number BFU725F/N1 BFU725F_N1 , (°C) 160 Fig 1. Power derating curve BFU725F_N1 All information provided in this document , 25.5 - 13.5 - BFU725F_N1 All information provided in this document is subject to legal , function of collector current; typical values BFU725F_N1 All information provided in this document is , . Gain as a function of collector current; typical value BFU725F_N1 All information provided in
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RF1119

Abstract: TZA3036 SOT343F BFU725F bra910 RF BAP51 * BAP55 * BAP142* BAP63* BAP64* BAP1321* RF RF LNA RF SOT343F BFU725F BFG410W BFG425W BFG480W BGA2022 SOD523 BB145B SOT343 SOT343F SOT343 BFG425W BFG424F BFG480W SOT343F BFU725F SOD882T RF MMIC VCO VCO RF RF , LNA BIAS IC Bias IC BFG325 SOT343F BFU725F TSSOP16 UAF4000TS SOD882T RF , SUPPLY & BAND/POLARIZATION SWITCHING 1 LNA TFF1004 LO_SEL VCC IF gain BFU725F 1 2
NXP Semiconductors
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TFF1003HN TZA3036 RF1119 UAA 1006 BF862 AM LNA 2SK163-L TFF1003 BGU7004 BGU7005 TFF1006HN CGY888C CGD942D

BFU725F

Abstract: BGU7003 NXP wideband LNA MMIC BGU7003 in SiGe:C process NXPSiGeCRF MMIC GaAs Ñ MMIC Ñ 1.575GHz0.85dB Ñ 1.575GHz20dB Ñ 110GHz fT-SiGeC Ñ 5mA Ñ ESD1kV HBM Ñ 6 SOT891 Ñ Ñ 1A Ñ Ñ GPS Ñ E Ñ WLANCDMA Ñ Ñ DECT Ñ BGU7003 GPS GPS BGU7003 NXP SiGeC BiCMOS QUBiC4X GaAs BGU7003 RF BFU725F NXP Rb NXPSiGeC BFU725F BGU7003 / Vcc BIAS
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575GH 110GH

BFU725F

Abstract: BGU7003 . RF NXP BFU725F . . . Rb BGU7003 NXP SiGe:C BFU725F
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double TRANSISTOR SMD MARKING CODE mc

Abstract: very simple walkie talkie circuit diagram BGA2001 SOT343R BGA2003 SOT891 SOT886 BGU7003 BGU7005 SOT343F BFU725F Product , BGA2003 SOT343R BGA2001 SOT343F BFU725F SOT891 BGU7003 Product highlight: BGA6289 , BFG425W BFG424F Function SOT343F BFU725F SOT891 BGU7003 * = also available in ultra , SOT343F BFU725F SOT891 BGU7003 Package SOT343 SOT343 SOT343 SOT363 Type BFG410W , SOT343F BFU725F Features }Very high maximum power gain (20 dB for 2 GHz) }Low noise figure (1.2
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double TRANSISTOR SMD MARKING CODE mc very simple walkie talkie circuit diagram walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC BLT50 BLT70 BLT80 BLT81 BSR56 BSR57

UAA 1006

Abstract: UXA23465 " " UTLP RF SiGeC RF RF MMIC BFU725F RF CATV 1-GHz USB WiMAX RF WiMAX , BAP63 BAP64 BAP1321 SOT343 SOT343F BFG425W BFG424F SOT343F BFU725F bra910 RF RF , SOT343F BFG425W BFG424F SOT343F BFU725F SOT343 SOT343 SOT343 SOT363 SiGeC RF , BFG425W BFG424F BFG480W SOT343F BFU725F 2 GHz 20 dB 2 GHz 1.2 dB 25 GHz 95 fF RF 10 , BFU725F TSSOP16 UAF4000TS -4x4 16 x 16 STB s a te llite d is h e (s ) 1.5 SWITCH
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TEF6860HL UXA23465 UXA23476 UXA23466 UAF4000 TEF6862HL

diode varicap BB 112

Abstract: toshiba smd marking code transistor . 5 RF BFU725F SiGeC RFRF MMIC USB WiMAXRF , SOT343 SOT343F Type BFG425W BFG424F Function SOT343F BFU725F RF Switch LNA , Type BFG425W BFG424F SOT343F BFU725F Package SOT343 SOT343 SOT343 SOT363 Type , BFG480W SiGeC transistor SOT343F BFU725F } 20dB@2GHz } 1.2dB@2GHz } 25GHz , SOT343F Product BFU725F Package Bias IC Type TSSOP16 UAF4000TS 2.45 Ghz T/R, RF
NXP Semiconductors
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diode varicap BB 112 toshiba smd marking code transistor SMD TRANSISTOR MARKING 02N SOT23-6 MARKING 02n transistor smd marking CODE Wb smd code marking NEC rf transistor

blf578

Abstract: MRF6V2300N BFU725F NXP (SiGeC BiCMOS QUBiC4X GaAs BFU725FIC GaAs pHEMT , SOT343R BGA2003 SOT891 SOT886 BGU7003 BGU7005 SOT343F BFU725F : BGU7005 SiGe:C MMIC , SOT343R BGA2001 SOT343F BFU725F SOT891 BGU7003 : BGA6289 MMIC }17 dBm , SOT343F Type BFG425W BFG424F Function SOT343F BFU725F SOT891 BGU7003 * = SOD882T , BFU725F SOT891 BGU7003 Package SOT343 SOT343 SOT343 SOT363 Type BFG410W BFG425W BFG480W
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blf578 MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 GaN ADS blf278 rf amplifier BSR58 BSS83 CGD1040H CGD1042H CGD1044H CGD914

Motorola transistor smd marking codes

Abstract: BFG591 Application Notes technologies such as the BFU725F, which meet today's demand for higher frequencies. We have also introduced , Function SOT343F BFU725F RF Switch LNA Product RF diode Product RF bipolar , BAP1321 Package SOT343 SOT343F Type BFG425W BFG424F SOT343F BFU725F Package SOT343 , SOT343F SOT343 Type BFG425W BFG424F BFG480W SOT343F BFU725F Features Very high maximum , transistor Product Bias IC SOT343 BFG325 Type SOT343F BFU725F Package General purpose
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Motorola transistor smd marking codes BFG591 Application Notes sot323 transistor marking MOTOROLA smd transistor marking A3 sot23 3pin walkie-talkie transceiver diagram 113 marking code transistor ROHM

Motorola transistor smd marking codes

Abstract: UAF3000 chipset consists of the TFF1004HN, the UAF3000TS, and the BFU725F. TFF1004HN is a highly integrated IC , Package SOT343 SOT343F Type BFG425W BFG424F Function SOT343F BFU725F * = also available , SOT343F Type BFG425W BFG424F SOT343F BFU725F Package SOT343 SOT343 SOT343 SOT363 Type , BFG480W SOT343F BFU725F Features }Very high maximum power gain (20dB for 2GHz) }Low noise , transistor Product Bias IC SOT343 BFG325 Type SOT343F BFU725F Package General purpose
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BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947

QUBiC4X

Abstract: BFU725F of the NXP BFU725F. The bias adapts over temperature to ensure the gain is well controlled. There , 's growing SiGe:C portfolio, the BGU7003 joins the highly successful BFU725F device. It is available in a
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QUBiC4X

BFG591 amplifier

Abstract: MRF6Vp3450 SOT343R BGA2003 SOT891 SOT886 BGU7003 BGU7005 SOT343F BFU725F BGU7005 SiGe:C MMIC , SOT343F BFU725F SOT891 BGU7003 BGA6289 MMIC }17 dBm } (MMIC) 4 SOT89SMD , BFG424F Function SOT343F BFU725F SOT891 BGU7003 * = SOD882T RF Switch LNA , * BAP1321* Package SOT343 SOT343F Type BFG425W BFG424F SOT343F BFU725F SOT891 BGU7003 , Package SOT343 SOT343F SOT343 Type BFG425W BFG424F BFG480W SOT343F BFU725F } (2 GHz20
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BFG591 amplifier MRF6Vp3450 5.8GHz Analog RF mmic nxp Standard Marking BLF6G21-10G 82 sot363-6 radar 77 ghz sige CGD923 CGD942C CGD944C CGY887A CGY887B OM7650
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