NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| Part | Manufacturer | Description | Type | Ordering |
| BFU725F | NXP Semiconductors / Philips Semiconductors | NPN wideband silicon germanium RF transistor - @ f: 2400 MHz; @ f2: 5800 ; @ I<sub>C</sub>: 40 mA; f<sub>T</sub>: 70 GHz; Frequency: 0.7 MHz; I<sub>C</sub>: 40 mA; ITO: 19 dBm; P<sub>L</sub>: 8 W; Polarity: NPN ; Socket: LNA ; V<sub>CE</sub>: 2 V; VCEO max: 2.9 V |
11 pages, |
Original | |
| BFU725F,115 | NXP Semiconductors / Philips Semiconductors | NPN wideband silicon germanium RF transistor |
12 pages, |
Original | |
| BFU725F/N1,115 | NXP Semiconductors / Philips Semiconductors | NPN wideband silicon germanium RF transistor; Package: SOT343N (SO4); Container: Tape reel smd |
11 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SiGeC NPN BFU725F 20GHz NXP Semiconductors SiGeC BFU725F NPN SOT343F 20GHz 0.4dB@1.8GHz,0.67dB@5.8GHz 27.8dB@1.8GHz, 10dB@5.8GHz fT >100 GHz / fMAX >150 GHz SOT343F SiGeC BFU725F RF 10GHz 30GHz BFU725F GaAs RoHS , BiCMOS GPS DECT LNA DBS LNA WLAN CDMA - LNB - SiGeC QUBiC4X GaAs BFU725F GaAs pHEMT IC - BV CEO IC = 1 mA; I B = 0 IC(max) 3.2 V 40 mA fT VCE = 2 V; I C = 25 mA; f = 2 GHz VCE = 2 V; I ... | Original |
2 pages, |
SOT343F SOT-343F BFU725F RF LNA 10 GHz BFU725FSOT343F BFU725F abstract |
| Abstract: chipset The chipset consists of the TFF1004HN TFF1004HN, the UAF3000TS UAF3000TS, and the BFU725F. The UAF3000TS UAF3000TS is a FET , BFU725F for 2nd LNA stage N 4 emo board available D Designed for use in the Low Noise Block (LNB , /POLARIZATION SWITCHING horizontal 1st STAGE LNA TFF1004 TFF1004 LO_SEL VCC vertical BFU725F 2nd STAGE , with TFF1004HN TFF1004HN, UAF3000TS UAF3000TS, and BFU725F The BFU725F is an NPN microwave transistor for high-speed , UAF3000TS UAF3000TS Conversion gain Gc (dB) 8 BFU725F Input frequency range (GHz) 10.7 to 12.75 ... | Original |
2 pages, |
ku-band lnb satellite mixer lnb TFF1004HN HVQFN24 ku-band pll lnb transistor k 975 lnb ku-band BFU725F 9.75 GHz or 10.6 GHz ku-band oscillator UAF3000TS 9.75 GHz oscillator ic lnb TFF1004HN abstract |
| Abstract: SiGeC microwave NPN transistor BFU725F A perfect match up to 20 GHz Meet the trend towards higher frequencies. With NXP Semiconductors' latest SiGeC microwave NPN transistor BFU725F, you get high , microwave applications The NPN microwave transistor BFU725F delivers an unbeatable blend of high , GHz range, such as satellite TV receivers and automotive collision avoidance radar. The BFU725F get , addition, with the BFU725F, you don't need a biasing IC or negative biasing voltage. So it's a much more ... | Original |
2 pages, |
SOT343F germanium transistors NPN BFU725F BFU725F abstract |
| Abstract: BGU7003 BGU7003 RF MMIC Ã' MMIC Ã' 1.575 GHz0.85 dB Ã' 1.575 GHz20 dB Ã' 110-GHz fT Ã' 5-mA Ã' ESD>1KV Ã' 6-pin SOT891 Ã' Ã' 1 A Ã' Ã' GPS Ã' Ã' CDMA Ã' Ã' / DECT Ã' BGU7003 BGU7003 GPS GPS BGU7003 BGU7003"QUBiC4X" SiGe:C BiCMOS GaAs BGU7003 BGU7003 RF BFU725F Rb BGU7003 BGU7003 BFU725F Vcc BIAS AND ENABLE IN EN GND OUT brb199 BGU7003 BGU7003 circuit BGU7003 BGU7003 in leadless SOT891 C3 V_cc Rb ... | Original |
2 pages, |
BGU7003 BFU725F 110GHZ BGU7003 abstract |
| Abstract: NXP satellite LNB devices BFU725F and BGA28xx Complete satellite portfolio for all LNB , additions to NXP's leading portfolio for satellite LNB. BFU725F RF transistor The BFU725F is an RF , solution. BFU725F as mixer in Ku-band LNB Power consumption: 2 mA at 5 V Single supply: 3, 5, or 6 V , isolation better than 18 dB BFU725F as 2nd or 3rd stage LNA in Ku-band LNB Power consumption: 11 mA at , stable BFU725F as LNA for C-band LNB Power consumption: 7 mA at 5 V Single supply: 5 or 6 V Noise ... | Original |
2 pages, |
ic lnb BGA28xx mixer lnb BGA2865 smd transistor sot363 sot363 gaAS QUBiC4X SMD Transistor in sot363 LNA ku-band ku-band lnb satellite BFU725F lnb ku Multiple output LNB SOT363F BFU725F abstract |
| Abstract: pack package; reverse pinning; 4 leads SOT343F BFU725F_1 Product data sheet © NXP B.V. , 0 40 80 120 160 Tsp (°C) Fig 1. Power derating curve BFU725F_1 Product data , = 25 °C IC = 5 mA; VCE = 2 V; S = opt; Tamb = 25 °C BFU725F_1 Product data sheet [1 , maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. BFU725F_1 Product data sheet © NXP , BFU725F_1 Product data sheet 40 IC (mA) © NXP B.V. 2007. All rights reserved. Rev. 01 - 6 ... | Original |
12 pages, |
SOT343F JESD625-A germanium transistors NPN germanium transistor npn germanium transistor germanium rf transistor BFU725F BFU725F abstract |
| Abstract: . RF NXP BFU725F . . . Rb BGU7003 BGU7003 NXP SiGe:C BFU725F ... | Original |
2 pages, |
BGU7003 BFU725F BGU7003 abstract |
| Abstract: NXP wideband LNA MMIC BGU7003 BGU7003 in SiGe:C process NXPSiGeCRF MMIC GaAs Ã' MMIC Ã' 1.575GHz0.85dB Ã' 1.575GHz20dB Ã' 110GHz fT-SiGeC Ã' 5mA Ã' ESD1kV HBM Ã' 6 SOT891 Ã' Ã' 1A Ã' Ã' GPS Ã' E Ã' WLANCDMA Ã' Ã' DECT Ã' BGU7003 BGU7003 GPS GPS BGU7003 BGU7003 NXP SiGeC BiCMOS QUBiC4X GaAs BGU7003 BGU7003 RF BFU725F NXP Rb NXPSiGeC BFU725F BGU7003 BGU7003 / Vcc BIAS ... | Original |
2 pages, |
BGU7003 BFU725F BGU7003 abstract |
| Abstract: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 - 23 June 2010 Product data , DRO's BFU725F NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick , Ordering information Table 3. Ordering information Type number Package Name BFU725F , BFU725F Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 - 23 June 2010 2 of 13 BFU725F NXP Semiconductors NPN wideband silicon germanium RF transistor 4. Marking ... | Original |
13 pages, |
RF Transistor reference nxp power microwave transistor JESD625-A germanium npn Germanium diode data sheet ka-band mixer DRO lnb germanium transistors NPN BFU725F BFU725F abstract |
| Abstract: : made in Malaysia * = W : made in China BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All , BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 - 13 July 2009 3 of , dB f = 12 GHz - 10 dB BFU725F_N1_1 Product data sheet - © NXP B.V. 2009. All , Fig 3. DC current gain a function of collector current; typical values BFU725F_N1_1 Product , BFU725F_N1_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 - 13 July 2009 6 of ... | Original |
11 pages, |
ka band lna nxp power microwave transistor nxp DC to microwave marking code s20 BFU725F DRO lnb germanium transistors NPN 160 germanium transistor ka-band mixer JESD625-a transistor marking N1 BFU725F/N1 BFU725F/N1 BFU725F/N1 abstract |
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| BFU725F NPN wideband silicon germanium RF transistor 1. Product profile 1.1 General description NPN Semiconductors BFU725F NPN wideband silicon germanium RF transistor 1.4 Quick reference data [1] Tsp is the Type number Package Name Description Version BFU725F - plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F BFU725F_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 - 6 December 2007 2 of 12 NXP Semiconductors BFU725F NPN wideband silicon germanium RF transistor www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFU725F_1.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| BFT25- BFT25- BFT25- BFT25->aonly S2P=>already done? BFT25A BFT25A BFT25A BFT25A BFT92 BFT92 BFT92 BFT92 BFT92W BFT92W BFT92W BFT92W BFT93 BFT93 BFT93 BFT93 BFT93W BFT93W BFT93W BFT93W BFU725F=> only S2P PBR941 PBR941 PBR941 PBR941 PBR951 PBR951 PBR951 PBR951 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (test_result.txt) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| ! Date/Time: Fri 23/May/2008 12:33:05 ! BFU725F_2V8mA ! bias mode 1: Vout= 2.0006 V, Iout= 7.9980 mA, Vin= 0.7975 V, Iin= 0.0161 mA ! Date/time Tue May 06 16:22:22 2008 # MHz S MA R 50 ! Freq-MHz S11-mag S11-arg S21-mag S21-arg S12-mag S12-arg S22-mag S22-arg 40 0.94907 -2.69 23.73 176.49 0.0019429 88.71 0.99844 -1.61 50 0.94396 -3.24 23.693 175.97 0.0022269 88.75 0.99819 -2.03 60 0.94849 -3.77 23.7 175.56 0 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFU725F_2V_8mA.s2p) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| _5.pdf PBR941/PBR941 PBR941/PBR941 PBR941/PBR941 PBR941/PBR941_S_NF_6V_5mA.s2p BFU725F_2V_8mA BFU725F < www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (NXP_wideband.xml) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| $begin 'AnsoftProject' Created='Tue Nov 17 22:30:25 2009' Product='Designer' NextUniqueID=0 MoveBackwards=false $begin 'Desktop' Version(5, 0) InfrastructureVersion(1, 0) $end 'Desktop' $begin 'PlanarEMEnvironment' Version(1, 0) $end 'PlanarEMEnvironment' $begin 'CircuitEnvironment' Version(1, 0) $end 'CircuitEnvironment' $begin 'SystemEnvironment' Version(1, 0) $end 'SystemEnvironment' $begin 'NexximEnvironment' Version(1, 0) $end 'NexximEnvironment' $begin 'NexximNet www.datasheetarchive.com/download/23493213-596982ZC/ansoft_designer_design_kit_for_nxp_rf_small_signal_products.zip (NXP_S_PARAMETERS.adsn) |
NXP | 23/10/2012 | 24162.7 Kb | ZIP | ansoft_designer_design_kit_for_nxp_rf_small_signal_products.zip |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| BFP720E6327 Buy | Discontinued | BFU725F Buy | NXP Semiconductor |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| BFU725F/N1 Buy | BFU725F Buy | Replacement For Discontinued NXP Product |