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Part : BFR181W H6327 Supplier : Infineon Technologies Manufacturer : Rutronik Stock : 12,000 Best Price : $0.0466 Price Each : $0.05
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Part : BFR181WH6327 Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 4,750 Best Price : $0.05 Price Each : $0.07
Part : BFR182E6327 Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 7,150 Best Price : $0.09 Price Each : $0.12
Part : BFR193L3E6327 Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 12,000 Best Price : $0.12 Price Each : $0.16
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BFR96 Datasheet

Part Manufacturer Description PDF Type
BFR96 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original
BFR96 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original
BFR96 Advanced Semiconductor Transistor Original
BFR96 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original
BFR96 Philips Semiconductors NPN 5 GHz Wideband Transistor Original
BFR96 Motorola The European Selection Data Book 1976 Scan
BFR96 Motorola European Master Selection Guide 1986 Scan
BFR96 Mullard Quick Reference Guide 1977/78 Scan
BFR96 N/A Basic Transistor and Cross Reference Specification Scan
BFR96 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BFR96 N/A Semiconductor Master Cross Reference Guide Scan
BFR96 N/A Shortform Transistor Datasheet Guide Scan
BFR96 Philips Components Philips Data Book Scan Scan
BFR96 Philips Semiconductors Plastic RF Transistors Scan
BFR96 SGS-Ates Shortform Data Book 1977/78 Scan
BFR96 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BFR96G Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original
BFR96H N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BFR96S Philips Semiconductors NPN 5 GHz Wideband Transistor Original
BFR96S Siemens Cross Reference Guide 1998 Original
Showing first 20 results.

BFR96

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: transistor S BFR96 â'"â'"N AMER PHILIPS/DISCRETE b^E T> DESCRIPTION NPN transistor in a plastic SOT37 , Code: BFR96/02 1 base 2 emitter 3 collector \/ m Fig. 1 SOT37. November 1992 This Material , Semiconductors m bhSBTBl 0031Ã&à SIB â  APX Product specification NPN 5 GHz wideband transistor BFR96 N AMER , specification NPN 5 GHz wideband transistor BFR96 - N A PIER PHILIPS/DISCRETE blE J> CHARACTERISTICS Tj = 25 , BFR96 - N A PIER PHILIPS/DISCRETE fe^E D 15 nH 270 a 1.5 kQ 1 nF input 75ÌÌ 5 nH 'U I â c 1nF -
OCR Scan
BFQ32 transistor bfr96 BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor S3131 ON4487 BFR96/02 53R31 S3T31
Abstract: specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D , . DESCRIPTION PIN Code: BFR96/02 1 base 2 emitter 3 collector The transistor features , wideband transistor BFR96 bRE J > N AMER PHILIPS/DISCRETE UMITING VALUES In accordance with the , - BFR96 N AMER PHILIPS/DISCRETE blE J > CHARACTERISTICS Tj = 25 °C unless otherwise , 0D31fl10 17b â  APX NPN 5 GHz wideband transistor BFR96 - N -
OCR Scan
EA430 EA478 53T31 0D31AT2
Abstract: Philips Semiconductors Product specification NPN 5 GHz wideband transistor g BFR96 PHILIPS , Semiconductors. PINNING PIN DESCRIPTION Code: BFR96/02 1 base 2 emitter 3 collector 1 \/ Ml Fig. 1 SOT37. Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96 PHILIPS INTERNATIONAL SbE , unless otherwise specified. T-31-23 BFR96 5bE ]> 711GflSb D04577Ã TST HPHIN SYMBOL PARAMETER CONDITIONS , wideband transistor BFR96 PHILIPS INTERNATIONAL 5bE D â  711Dflgb DDMS?^ â PHIN Fig.2 Intermodulation -
OCR Scan
philips bfq32 BFR96$ 4 20 mA 1992 DD4S77
Abstract: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free , WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 BFR96 BFR96G ELECTRICAL SPECIFICATIONS (Tcase = , our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 BFR96 BFR96G , contact our factory direct. Rev A 9/2005 BFR96 BFR96G SO-8 TO-39 POWER MACRO POWER MACRO TO , BFR96 BFR96G Macro T Macro X Power Macro SO-8 PIN 1. COLLECTOR 2. EMITTER 3. BASE 1 Advanced Power Technology
Original
s-parameter 2N3866A bfr96 equivalent 2N6255 2N5179 2N5109 MRF4427 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91
Abstract: INTERNATIONAL SbE D ^ BFR96 711DÃ"2t> 004577b lfl7 WM PHIN DESCRIPTION NPN transistor in a plastic SOT37 , complement is BFQ32. PINNING PIN DESCRIPTION Code: BFR96/02 1 base 2 emitter 3 collector /s 3 , transistor BFR96 PHILIPS INTERNATIONAL SbE D m 7HD6Eb 00M5777 013 MPHIN LIMITING VALUES In accordance with , Philips Semiconductors Product specification _ NPN 5 GHz wideband transistor BFR96 PHILIP , 5 GHz wideband transistor BFR96 PHILIPS INTERNATIONAL 5bE D â  711Dfl5b 00M577^ HPHIN Fig -
OCR Scan
M8B916 SL 100 NPN Transistor transistor 936 BFR96 pins resistance ON44 143-C MEA460 D04S7 0D457A2 00MS763
Abstract: BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line , BFR96 is particularly suitable for broadband MATV/CATV amplifiers. BFR96 f j = 4.5 GHz @ 50 mA , temperature measured on collector lead immediately adjacent to body of package. BFR96 2-14 MOTOROLA RF , Gain versus Collector Current MOTOROLA RF DEVICE DATA BFR96 2-15 b3b725M GlObBfll 32T N F , Capacitance versus Collector-Base Voltage BFR96 2-16 MOTOROLA RF DEVICE DATA b3b725M G10b3fl2 2bb -
OCR Scan
Abstract: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · High Current-Gain ­ , 500 10 mWatts mW/ ºC 053-7013 Rev - 9-2002 BFR96 ELECTRICAL SPECIFICATIONS (Tcase = 25 , GHz pF 053-7013 Rev - 9-2002 BFR96 FUNCTIONAL Symbol Test Conditions Min. NF |S21| 2 , 053-7013 Rev - 9-2002 BFR96 RF Low Power, PA, LNA, & General Purpose Selector Guide. GPE Freq (MHz , 2N2857 MRF517 MRF904 2N6304 BFR91 BFR96 MRF581A BFR90 BFY90 MRF914 MRF581 MRF586 MRF951 MRF571 BFR91 Advanced Power Technology
Original
MRF5943 MRF559 2N3866A MRF3866 MRF555 MRF555T
Abstract: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · High Current-Gain ­ Bandwidth , BFR96 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol Test Conditions Value , , f = 1.0 MHz) - 2.6 3.2 pF MSC1309.PDF 10-25-99 BFR96 FUNCTIONAL Symbol , 0.375 -134 MSC1309.PDF 10-25-99 BFR96 SO-8 MRF4427, R2 NPN 175 0.15 18 60 , 50 12 35 2.6 15 100 15 200 15 200 1 15 30 15 50 12 40 MACRO T BFR96 NPN 500 SO Microsemi
Original
2N4427 MRF553 MRF607 MRF545 MRF544 MRF5943C
Abstract: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state­of­the­art , figure, and low intermodulation distortion. The BFR96 is particularly suitable for broadband MATV/CATV , . ©MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 (continued) BFR96 1 ELECTRICAL CHARACTERISTICS - , Gain versus Collector Current BFR96 2 80 f = 0.5 GHz 5 VCE = 5 V 4 10 V 3 2 0 Motorola
Original
BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 RF TRANSISTOR 1.5 GHZ BFR961 BFR96/D DEVICEBFR96/D
Abstract: voltage open base PINNING PIN 1 2 3 base emitter collector - 3 /- . Z 3 BFR96 5bE D DESCRIPTION Code: BFR96/02 711002b 004577b 1A7 P H I N CONDITIONS open emitter up to Ts = 143 °C (note 1) lc , NPN 5 G H z wideband transistor BFR96 PHILIPS INTERNATIONAL ShE D m 7110fl2Li 00M S777 , Philips Semiconductors Product specification T -3 1 -2 3 NPN 5 G H z wideband transistor BFR96 , -NPN 5 G H z wideband transistor T-31- 23 -BFR96 P H ILIPS INTERNATIONAL_ 5bE D -
OCR Scan
Transistor 933 Transistor s44 transistorbfr96 T-31-- T-3I-23
Abstract: BFR90 BFR91 BFR96 NPN 4.5 BFR90 MM4049 BFR91 BFR96 BFR96 PNP NPN 4.0 MM4049 BFR90 MM4049 BFR91 -
OCR Scan
2N5829 2N5031 2N4957 2N5032 MRF901 MRF911 2N5160 2N5583 MRF531 2n3866 noise MFR901 BFR90 amplifier 2N4958
Abstract: , f = 1.0 MHz) - 2.6 3.2 pF PRELIMINARY BFR96.PDF 3-10-99 BFR96 FUNCTIONAL , 0.375 -134 PRELIMINARY BFR96.PDF 3-10-99 BFR96 SO-8 MRF4427, R2 NPN 175 0.15 , . BFR96 PIN 1. COLLECTOR 2. EMITTER 3. BASE 1. 2. 3. PRELIMINARY BFR96.PDF 3-10-99 , Thermal Data P D Total Device Dissipation @ TC = 100ºC Derate above 100ºC PRELIMINARY BFR96.PDF , 70 TO-39 2 PRELIMINARY BFR96.PDF 5000 1300 4500 TO-39 3 Macro X BVCEO IC Microsemi
Original
Abstract: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · · · High Current-Gain ­ Bandwidth , factory direct. BFR96 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 , website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFR96 FUNCTIONAL Symbol NF |S21 , WWW.ADVANCEDPOWER.COM or contact our factory direct. BFR96 RF Low Power, PA, LNA, & General Purpose Selector , 400 400 MACRO T BFR96 NPN 500 SO-8 MRF5812, R1, R2 NPN 500 MACRO X MRF581A NPN 500 Macro TO-72 TO Advanced Power Technology
Original
MRF8372 MRF557 MRF557T
Abstract: BFR90 BFR91 BFR96 NPN 4.5 BFR90 MM4049 BFR91 BFR96 BFR96 PNP NPN 4.0 MM4049 BFR90 MM4049 BFR91 -
OCR Scan
2N3866 2N3553 2N6166 MRF306 2N5841 2N4073 BFR90 transistor mrf502 transistor BFR91 transistor npn UHF transistor 2N5179 2N5641 144B-04 2N5643
Abstract: Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features , distortion. The BFR96 is particularly suitable for broadband MATV/CATV amplifiers. f j = 4.5 GHz @ 50 mA , : 1. Case temperature measured on collector lead immediately adjacent to body of package. BFR96 , DEVICE DATA BFR96 2-23 NF, NOISE FIGURE (dB) 0.1 0.2 0.3 0.5 I, FREQUENCY (GHz) Figure 5 , , COLLECTOR-BASE VOLTAGE (Vdc) Figure 7. Collector-Base Capacitance versus Collector-Base Voltage BFR96 2-24 -
OCR Scan
Abstract: TECHNICAL DATA SEMICONDUCTOR BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H , noise figure, and low interm odulation d isto rtio n . The BFR96 and MRF961 a-e particularly suitable fo , @ 50 m A H IG H FREQUENCY TRANSISTO R NPN SILICON BFRC96 BFR96 MRF961 M RF962 M , . MOTOROLA RF DEVICE DATA 2 -1 5 3 BFR96, BFRC96, MRF961, MRF962, MRF965 MOTOROLA SC (XSTRS/R F) MbE T , Guarded) BFR96, M RF961. MRF962 MRF965 FU NC TIO NAL TESTS Noise Figure (1C a 10 mAdc, V c e * 10 Vdc, f -
OCR Scan
SL2128 case 317-01 RF965 IS22I
Abstract: BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR96G * G Denotes RoHS Compliant, Pb Free , our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 BFR96 BFR96G E , or contact our factory direct. Rev A 9/2005 BFR96 BFR96G F UNCTIO NAL Symbol Value , factory direct. Rev A 9/2005 BFR96 BFR96G SO-8 TO-39 POWER MACRO POWER MACRO TO-39 TO-39 TO , website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 BFR96 BFR96G Macro T Advanced Power Technology
Original
Abstract: The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features , intermodulation distortion. The BFR96 is particularly suitable for broadband MATV/CATV amplifiers. f j = 4.5 GHz @ , ) Ccb - 1.2 1,5 PF *T - 4,5 - G Hz BFR96 2 -1 4 MOTOROLA RF DEVICE DATA ELECTRICAL , ) lc , COLLECTOR CURRENT (mA| Figure 4. G ain-B andw idth Product versus Collector Current BFR96 , (Vdc) Figure 7. C ollecto r-B ase C apacitance versus C ollecto r-B ase Voltage BFR96 2-16 -
OCR Scan
Transistor C G 774 6-1 C G 774 6-1 transistor a 1941 IS12I
Abstract: BFR90 BFR91 BFR96 NPN 4.5 BFR90 MM4049 BFR91 BFR96 BFR96 PNP NPN 4.0 MM4049 BFR90 MM4049 BFR91 , 5/35 5000* 1.9*/500 302 V BFR96 10/50 5000* 3.3*/500 302 'Grounded Emitter T039 (Case -
OCR Scan
MRF905 uhf amplifier design BFR90 2N3866 MOTOROLA MOTOROLA 2N5179 2N2857 MOTOROLA MRF532 MRF509 MRF313 MRF313A MRF517A 2N5635 MRF5175
Abstract: j. ts TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features â'¢ High Current-Gain - Bandwidth Product, fT = 4.5 GHz (typ) @ 1C = 50 mA â'¢ Low Noise Figure - NF = 2.4 dB (typ) @ f = 0.5 GHz â'¢ High Power Gain - Gmax = 14.5dB (typ) @ f = 0.5 GHz Macro , ilniivihivtt irr i iprrent h*liire olncini! .Tilen BFR96 ELECTRICAL SPECIFICATIONS (Tease = 25Â New Jersey Semiconductor
Original
Abstract: BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line , BFR96 is particularly suitable for broadband MATV/CATV amplifiers. BFR96 f j = 4.5 GHz @ 50 mA , temperature measured on collector lead immediately adjacent to body of package. BFR96 2-14 MOTOROLA RF , Gain versus Collector Current MOTOROLA RF DEVICE DATA BFR96 2-15 b3b725M GlObBfll 32T N F , Capacitance versus Collector-Base Voltage BFR96 2-16 MOTOROLA RF DEVICE DATA b3b725M G10b3fl2 2bb Temic Semiconductors
Original
BFR96T Transistor BFR 96 Bfr 910 TRANSISTOR BFR 642 88/540/EEC 91/690/EEC D-74025
Abstract: BFR90 BFR91 BFR96 NPN 4.5 BFR90 MM4049 BFR91 BFR96 BFR96 PNP NPN 4.0 MM4049 BFR90 MM4049 BFR91 Siemens
Original
BFR 965 mpsa 46 BAW 62 SOT23 4148 SOD-123 bc 544 BRF91A
Showing first 20 results.