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POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
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POE-PD-POWER-REF Texas Instruments LM5072 5V out 25W IEEE 802.3at Compliant POE+ PD Power Reference Design visit Texas Instruments
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil

BFR96 LOW POWER TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

transistor bfr96

Abstract: BFR96 philips transistor S BFR96 â'"â'"N AMER PHILIPS/DISCRETE b^E T> DESCRIPTION NPN transistor in a plastic SOT37 , , oscilloscopes, spectrum analyzers, etc. The transistor features very low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low , Semiconductors m bhSBTBl 0031Ã&Ã SIB â  APX Product specification NPN 5 GHz wideband transistor BFR96 N AMER , specification NPN 5 GHz wideband transistor BFR96 - N A PIER PHILIPS/DISCRETE blE J> CHARACTERISTICS Tj = 25
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BFQ32 transistor bfr96 BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor S3131 ON4487 BFR96/02 53R31 S3T31

BFR96 philips

Abstract: specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D , . DESCRIPTION PIN Code: BFR96/02 1 base 2 emitter 3 collector The transistor features very low intermodulation distortion and high power gain; due to its very high transition frequency , wideband transistor BFR96 bRE J > N AMER PHILIPS/DISCRETE UMITING VALUES In accordance with the , 0D31fl10 17b â  APX NPN 5 GHz wideband transistor BFR96 - N
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EA430 EA478 53T31 0D31AT2

BFR96

Abstract: BFR96 philips Philips Semiconductors Product specification NPN 5 GHz wideband transistor g BFR96 PHILIPS , , oscilloscopes, spectrum analyzers, etc. The transistor features very low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low , . Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96 PHILIPS INTERNATIONAL SbE , wideband transistor BFR96 PHILIPS INTERNATIONAL 5bE D â  711Dflgb DDMS?^ â PHIN Fig.2 Intermodulation
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philips bfq32 4 20 mA 1992 BFR96$ DD4S77 T-31-23

transistor bfr96

Abstract: SL 100 NPN Transistor INTERNATIONAL SbE D ^ BFR96 711DÃ"2t> 004577b lfl7 WM PHIN DESCRIPTION NPN transistor in a plastic SOT37 , , oscilloscopes, spectrum analyzers, etc. The transistor features very low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low , transistor BFR96 PHILIPS INTERNATIONAL SbE D m 7HD6Eb 00M5777 013 MPHIN LIMITING VALUES In accordance with , Philips Semiconductors Product specification _ NPN 5 GHz wideband transistor BFR96 PHILIP
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M8B916 SL 100 NPN Transistor transistor 936 BFR96 pins resistance 143-C ON44 MEA460 D04S7 0D457A2 00MS763

BFR96

Abstract: BFR96 philips transistor features very low intermodulation distortion and high power gain; due to its very high transition , NPN 5 G H z wideband transistor BFR96 PHILIPS INTERNATIONAL ShE D m 7110fl2Li 00M S777 , Philips Semiconductors Product specification T -3 1 -2 3 NPN 5 G H z wideband transistor BFR96 , -NPN 5 G H z wideband transistor T-31- 23 -BFR96 P H ILIPS INTERNATIONAL_ 5bE D , Semiconductors Product specification T-31-23 NPN 5 G H z wideband transistor BFR96 PHILIPS
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Transistor 933 Transistor s44 transistorbfr96 T-31-- T-3I-23

BFR96

Abstract: BFR96 TRANSISTOR MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers requiring high gain, low noise figure, and low intermodulation distortion. The BFR96 is particularly suitable for broadband MATV/CATV amplifiers. BFR96 f j = 4.5 GHz @ 50 mA
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transistor bfr96

Abstract: BFR96 MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state­of­the­art microwave transistor chip which features fine­line geometry, ion­implanted arsenic emitters and gold top metallization. This transistor is intended for low­to­medium power amplifiers requiring high gain, low noise figure, and low intermodulation distortion. The BFR96 is particularly suitable for broadband MATV/CATV
Motorola
Original
BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts datasheet for transistor bfr96 motorola J50 RF TRANSISTOR 1.5 GHZ BFR961 BFR96/D DEVICEBFR96/D

BFR96

Abstract: Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers requiring high gain, low noise figure, and low intermodulation distortion. The BFR96 is particularly suitable for broadband MATV/CATV amplifiers. f j = 4.5 GHz @ 50 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage
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Transistor C G 774 6-1

Abstract: C G 774 6-1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers requiring high gain, low noise figure, and low intermodulation distortion. The BFR96 is particularly suitable for broadband MATV/CATV amplifiers. f j = 4.5 GHz @
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Transistor C G 774 6-1 C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 IS12I

2N5109 motorola

Abstract: BFY90 MOTOROLA 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package , , MRF914 14 BFR96, MRF961, MRF962, MRF965 15 BFW92A 16 MRF559 17 MRF580. MRF581, MRF586, MRF587 18
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2N3866A 2N5943 2N5583 MM4049 2N5109 motorola BFY90 MOTOROLA bfr91 motorola MOTOROLA 2N5179 2n4427 MOTOROLA 2N3866 2N5160 MM4018 2N3948 2N4427

2N5109 motorola

Abstract: MRF536 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package , , MRF914 14 BFR96, MRF961, MRF962, MRF965 15 BFW92A 16 MRF559 17 MRF580. MRF581, MRF586, MRF587 18
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MRF511 MRF525 MRF931 MRF536 BFR90 application 244A-01 mrf517 MRF207 2N5109 2N5836 2N5837 MRF517

uhf amplifier design BFR90

Abstract: 2N3866 MOTOROLA ( Device Type pout Output Power gPE Power Gain dB Min. VCC Supply Voltage Volts , MRF306* 60 8.0 28 278-06 "Controlled "Q" transistor. See EB-19. UHF and Microwave Oscillators The , BFR90 BFR91 BFR96 NPN 4.5 BFR90 MM4049 BFR91 BFR96 BFR96 PNP NPN 4.0 MM4049 BFR90 MM4049 BFR91 , 5/35 5000* 1.9*/500 302 V BFR96 10/50 5000* 3.3*/500 302 'Grounded Emitter T039 (Case , CATV distribution equipment but are applicable wherever broadband (HF/VHF) low distortion, low-noise
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2N6166 MRF905 uhf amplifier design BFR90 2N3866 MOTOROLA MRF531 2n5179 MRF532 2N3553 2N5641 144B-04 2N5643 MRF509

SL2128

Abstract: MRF965 transistor chip which features fine-line geometry, ion-im planted arsenic em itters and gold top m etalization. These transistors are intended fo r low -to-m edium power am plifiers requiring high gain, low noise figure, and low interm odulation d isto rtio n . The BFR96 and MRF961 a-e particularly suitable fo , TECHNICAL DATA SEMICONDUCTOR BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H , F /U H F Class C driver a m plifier for several hundred m illiw a tts power output. f j - 4.5 GHz
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SL2128 case 317-01 RF962 RF965 IS22I

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , Transistors Higher power output devices in this UHF power transistor series feature internally input-matched , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package
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900 mhz oscillator using bfr91 transistor Mrf648 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 MRF2369 2N2857 2N3339 MRF501 MRF502 BFX89 BFY90

mrf502 gold transistor

Abstract: transistor 2n4959 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package , , MRF914 14 BFR96, MRF961, MRF962, MRF965 15 BFW92A 16 MRF559 17 MRF580. MRF581, MRF586, MRF587 18
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MRF911 MRF309 mrf502 gold transistor transistor 2n4959 MRF515 305A-01 MOTOROLA SELECTION mrf237 2N4957 2N4958 2N4959 2N6603 MRF901 MRF904

case 317-01

Abstract: MRF2369 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package , , MRF914 14 BFR96, MRF961, MRF962, MRF965 15 BFW92A 16 MRF559 17 MRF580. MRF581, MRF586, MRF587 18
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2N5947 transistor MRF536 RF Transistor Selection Y parameters of transistors case BFX89 2n3866 noise 2N6604 317-01/317A-01 MRF571 MRF572

2n4427 MOTOROLA

Abstract: MRF536 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package , , MRF914 14 BFR96, MRF961, MRF962, MRF965 15 BFW92A 16 MRF559 17 MRF580. MRF581, MRF586, MRF587 18
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motorola 2N4427 macro-X ceramic 2N3866 MOTOROLA s parameters motorola rf Power Transistor MRF534

2n5835

Abstract: 2n4957 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package , , MRF914 14 BFR96, MRF961, MRF962, MRF965 15 BFW92A 16 MRF559 17 MRF580. MRF581, MRF586, MRF587 18
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MRF544 MRF542 MRF543 2n5835 rf power package selection guide mrf502 transistor motorola 2N3866 low noise transistor cross 2N5835 2N5031 2N5829 MRF545

MRF965

Abstract: 2N5109 motorola 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package , , MRF914 14 BFR96, MRF961, MRF962, MRF965 15 BFW92A 16 MRF559 17 MRF580. MRF581, MRF586, MRF587 18
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high gain PNP RF TRANSISTOR 2n6603 transistor RF 2N3866 2N3866 RF output Design PNP UHF transistor Selection guide of Transistors 317D-01

MRF542

Abstract: MRF545 's small-signal, low power RF transistor product range includes transistors with gain-bandwidths of 1.0 GHz to 8.0 , switching characteristics, low power driver specifications, and noise figure limits. QPL types with JAN, JTX , small-signal and medium power RF transistors with gain-bandwidth products from 1.0 GHz to 8.0 GHz operate with , , enables the circuit designer to select the optimum device from Motorola's wide range of transistor/package , , MRF914 14 BFR96, MRF961, MRF962, MRF965 15 BFW92A 16 MRF559 17 MRF580. MRF581, MRF586, MRF587 18
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BFR90 transistor 2N33 mrf*965
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