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LT1528CQ#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CQ Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CQ#TR Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CT#PBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CT Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: TO-220; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LT1528CQ#TRPBF Linear Technology LT1528 - 3A Low Dropout Regulator for Microprocessor Applications; Package: DD PAK; Pins: 5; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

BFP740 application note

Catalog Datasheet MFG & Type PDF Document Tags

bfp740

Abstract: what is technical report BFP740 LNA for 3.5GHz WiMax Application Technical Report TR104 Device: BFP740 , BFP740 LNA for 3.5GHz WiMax Application Published by Infineon Technologies AG 81726 München , Application 1. Overview Infineon Device: BFP740 Silicon Germanium RF Bipolar Transistor Application , BFP740 LNA for 3.5GHz WiMax Application 3. Description: This report presents the measurement , BFP740 LNA for 3.5GHz WiMax Application Table 4-1: Bill of Materials Symbol Value Unit Size
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what is technical report BFP740 application note 5Ghz lna transistor datasheet RF Bipolar Transistor LNA CIRCUIT infineon marking L2 2008-N LQG15H

BFP740

Abstract: BFP740 application note LNA using BFP740 for 2.3 ­ 2.7 GHz WiMax Application Technical Report TR103 Device: BFP740 , LNA using BFP740 for 2.3 ­ 2.7 GHz WiMax Application Published by Infineon Technologies AG , LNA using BFP740 for 2.3 ­ 2.7 GHz WiMax Application 1. Overview Infineon Device: BFP740 Silicon , LNA using BFP740 for 2.3 ­ 2.7 GHz WiMax Application 3. Description: This report presents the , LNA using BFP740 for 2.3 ­ 2.7 GHz WiMax Application 4. Schematics: Figure 4-1: Schematics of
Infineon Technologies
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bfp740 board 2008-D

uln 2008

Abstract: BFP740 Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low , or other persons may be endangered. Application Note No. 169 BFP740 5 ­ 6 GHz LNA with 100 nSec , Notes: www.infineon.com/rf.appnotes Application Note No. 169 BFP740 5 ­ 6 GHz LNA with 100 nSec , Rev. 1.0, 2008-11-18 Application Note No. 169 BFP740 5 ­ 6 GHz LNA with 100 nSec Turn-On , are 0402 case size. J3 DC Connector Application Note No. 169 BFP740 5 ­ 6 GHz LNA with 100
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uln 2008 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis BFP740 equivalent Digital Oscilloscope Preamp

BFP740 SPICE MODEL

Abstract: BFP740 equivalent , VCE = 3 V, pulse measured 1For calculation of R thJA please refer to Application Note Thermal Resistance 2005-11-10 2 BFP740 Electrical Characteristics at TA = 25°C, unless otherwise specified , BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · , discharge) sensitive device, observe handling precaution! Type BFP740 Marking R7s 1=B Pin , point to the pcb S 2005-11-10 1 BFP740 Thermal Resistance Parameter Symbol Value
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BFP740 SPICE MODEL germanium transistor ac 128 BGA420

BFP740 SPICE MODEL

Abstract: thJA please refer to Application Note Thermal Resistance 2007-04-20 2 BFP740 Electrical , BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor · Provides , precaution! Type BFP740 1Pb-containing Marking R7s 1=B Pin Configuration 2=E 3=C 4=E - Package SOT343 package may be available upon special request 2007-04-20 1 BFP740 Maximum Ratings , 3 P-1dB 24.5 13.5 25 11 - dB dBm 2007-04-20 3 BFP740 SPICE Parameter (Gummel-Poon
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BFP740

Abstract: sdars lna Application Note AN222, 1.0 3 / 11 2010-07-02 BFP740/BFP640 Series 2 Stage LNA for 2.330GHz SDARS , ).6 Application Note AN222, 1.0 4 / 11 2010-07-02 BFP740/BFP640 Series 2 Stage LNA for , BFP640FESD System Overview Application Note AN222, 1.0 5 / 11 2010-07-02 BFP740/BFP640 Series , . Application Note AN222, 1.0 6 / 11 2010-07-02 BFP740/BFP640 Series 2 Stage LNA for 2.330GHz SDARS , Application Note AN222, 1.0 7 / 11 2010-07-02 BFP740/BFP640 Series 2 Stage LNA for 2.330GHz SDARS
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BFP740FESD sdars lna BFP640 MIPI omnivision sdars xm sirius ag 20 taiyo BFP740FESD/BFP640FESD 330GH BFP740/BFP640 TR1013 TR1019
Abstract: thJA please refer to Application Note Thermal Resistance 2009-12-04 2 BFP740 Electrical , BFP740 NPN Silicon Germanium RF Transistor â'¢ High gain ultra low noise RF transistor 3 â , ) sensitive device, observe handling precaution! Type BFP740 1Pb-containing Marking R7s 1=B Pin , 2009-12-04 1 BFP740 Maximum Ratings Parameter Symbol Collector-emitter voltage Value Unit , to 6 GHz 1G 2009-12-04 3 BFP740 Simulation Data For SPICE-model as well as for S-parameters Infineon Technologies
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BFP740 SPICE MODEL

Abstract: BFP740 Application Note Thermal Resistance 2009-12-04 2 BFP740 Electrical Characteristics at TA = 25 , BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · , handling precaution! Type BFP740 1Pb-containing Marking R7s 1=B Pin Configuration 2=E 3 , BFP740 Maximum Ratings Parameter Symbol Collector-emitter voltage Value Unit VCEO V , . Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 1G 2009-12-04 3 BFP740 Simulation
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marking R7s sot343

Abstract: marking 17 sot343 please refer to Application Note Thermal Resistance Unit max. 30 100 3 400 V µA nA µA - typ. 4.7 250 V(BR)CEO ICES ICBO IEBO hFE 4 160 2 Nov-19-2004 BFP740 Electrical Characteristics , BFP740 NPN Silicon Germanium RF Transistor* · High gain ultra low noise RF transistor · Provides , : Electrostatic discharge sensitive device, observe handling precaution! Type BFP740 Maximum Ratings Parameter , the pcb S 1 Nov-19-2004 BFP740 Thermal Resistance Parameter Junction - soldering point 1
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marking R7s sot343 marking 17 sot343 VPS05605

bfp740

Abstract: Application Note Thermal Resistance Unit max. 30 100 3 400 V µA nA µA - typ. 4.7 250 V(BR)CEO ICES ICBO IEBO hFE 4 160 2005-05-30 2 BFP740 Electrical Characteristics at TA = 25°C, unless , BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor · Provides , precaution! 3 4 2 1 VPS05605 Type BFP740 Maximum Ratings Parameter Marking R7s 1=B Pin , BFP740 Thermal Resistance Parameter Symbol RthJS Value 380 Unit Junction - soldering point 1) K/W
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RF NPN POWER TRANSISTOR 3 GHZ

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ Application Note Thermal Resistance 2005-08-30 2 BFP740 Electrical Characteristics at TA = 25 , BFP740 3 NPN Silicon Germanium RF Transistor 4 · High gain ultra low noise RF , BFP740 Marking R7s 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 , measured on the collector lead at the soldering point to the pcb S 2005-08-30 1 BFP740 Thermal , for this measurement is 50 from 0.1 MHz to 6 GHz 2005-08-30 3 BFP740 Total power dissipation
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RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR C 10-12 GHZ RF TRANSISTOR 2.5 GHZ s parameter Germanium Power Diodes GERMANIUM TRANSISTOR RF NPN POWER TRANSISTOR 2.5 GHZ

BFP740 SPICE MODEL

Abstract: BFP740 equivalent Application Note Thermal Resistance 2008-01-18 2 BFP740 Electrical Characteristics at TA = 25 , BFP740 NPN Silicon Germanium RF Transistor · High gain ultra low noise RF transistor 3 · , handling precaution! Type BFP740 1Pb-containing Marking R7s 1=B Pin Configuration 2=E 3 , BFP740 Maximum Ratings Parameter Symbol Collector-emitter voltage Value Unit VCEO V , . Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 1G 2008-01-18 3 BFP740 SPICE
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BFP740

Abstract: ultra low noise RF Transistor IC = 25 mA, VCE = 3 V 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Nov-19-2004 BFP740 Electrical Characteristics at TA = 25°C, unless otherwise , BFP740 3 NPN Silicon Germanium RF Transistor* 4 · High gain ultra low noise RF , BFP740 Marking R7s 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 , measured on the collector lead at the soldering point to the pcb S 1 Nov-19-2004 BFP740 Thermal
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ultra low noise RF Transistor

BFP450

Abstract: RF TRANSISTOR 10GHZ Application PCB Marking: BFP740 Application Board (Using Emitter Degeneration) 2. Summary of , High OIP3 LNA using BFP450 for 434MHz ISM band Application Technical Report TR119 Device: BFP450 Application: High-OIP3 LNA for 434MHz ISM Band Applications Revision: Rev. 1.0 Date , 434MHz ISM band Application Measurement Report 2 / 10 2009-02-11 Technical Report High OIP3 LNA using BFP450 for 434MHz ISM band Application 1. Overview Infineon Device
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RF TRANSISTOR 10GHZ 434mhz RF TRANSISTOR 10GHZ low noise lna x band x band power transistor SOT343 lna 2009-F 434MH

gps schematic diagram

Abstract: BFP740 INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON , NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY , IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and , or other persons may be endangered. Application Note No. 117 Application Note No. 117 , changes since last revision) Tittle change Application Note 3 Rev. 1.3, 2007-11-16
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gps schematic diagram BFP740F gps 1575 gps lna 1575-r amplifier

BGT24MTR11

Abstract: AZ1045-04F Application notes, Data sheets, Simulation data: www.infineon.com/rftransistors.documents 4 , BFP420F BFP450 BFP520 BFP520F BFP540 BFP620 BFP620F BFP640 BFP640F BFP650 BFP650F BFP740 BFP720 BFP720F , ] 10 0.5 Ptot [mW] 330 100 BCR400W BCR410W SOT343 SOT343 Application notes, Data sheets , TSLP-3 SOT343 TSFP-4 SOT343 TSFP-4 SOT343 TSFP-4 SOT343 TSFP-4 Application notes, Data sheets , SPDT SPDT SPDT SP5T FWLP-6-1 TSLP-7-4 TSLP-7-6 TSNP-16 Application notes, Data sheets, Simulation
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BFR181W BGT24MTR11 AZ1045-04F BAR86-02LRH BGA628L7 24GHz Radar ALPHA&OMEGA DATE CODE BF517 BF770A BF771 BF799 BF799W BFP181

FSEM30

Abstract: BFP740 endangered. BFP740ESD BFP740ESD for 5-6GHz WLAN applications Application Note AN219 Revision History , Application Note AN219, Rev. 1.0 3 / 29 2010-07-12 BFP740ESD BFP740ESD for 5-6GHz WLAN applications , . 26 Application Note AN219, Rev. 1.0 4 / 29 2010-07-12 BFP740ESD BFP740ESD for 5-6GHz , . 10 Application Note AN219, Rev. 1.0 5 / 29 2010-07-12 BFP740ESD BFP740ESD for 5-6GHz , 1MHz Application Note AN219, Rev. 1.0 6 / 29 Comment/Test Condition 2010-07-12
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ESD0P2RF-02LRH FSEM30 NRP-Z21 sot344 5-6GHz LNA Miteq TSLP-2-17

XM0830SJ

Abstract: smd code marking 162 sot23-5 900 1800 900 1800 1800 900 900 900 900 ­ ­ ­ 900 900 Application notes, Data sheets , BFP740 2.3 4.0 4.0 4.0 4.0 4.0 80 80 50 50 150 150 185 185 200 200 500 500 65 , 0.11 ­ 2 0.15 Package Family Type List Type SOT343 SOT343 Application notes, Data , Family SOT343 TSLP-3 SOT343 TSFP-4 SOT343 TSFP-4 SOT343 TSFP-4 SOT343 TSFP-4 Application , P-0.1dB Pin,max. ton,off [dBm] > 21 > 21 > 21 > 30 > 30 Application notes, Data sheets
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XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BF775 BFP181R BFP182 BFP182R BFP182W BFP183

cdma Booster schematic

Abstract: uwb transceiver May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com , . Application Notes . Nomenclature . MatQ , Buffer RF Bipolar IF Low Noise Amplifier RF Bipolar BFP640 BFP740 BGA428 BGA622 BGA734L16 , > Applications > Consumer Target application Module IC from COM TU Analog Terrestrial / Cable (PAL , LNA2 BFP740, BFR740L3 Mixer BF776 DRO BFP420, BF776 IF Amplifier RF-Tr.: MMIC
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cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

Wired /12 pin 7 segment display layout -hs-5461BS2

Abstract: mbed LPC1768 know-how required Fast time-to-market with demo designs Product differentiation via application SW , engine hardware and software Application programmable UART available for communications port , customized applications â'" Low CPU load, other applications can run in-parallel with meter application â , adjustments â'" The calibration parameters can be adjusted real-time by the application running on the , ƒž cos(ï) Accumulated over time in application SW â'" Energy [kWh] 30 Energy Metering IC
NXP Semiconductors
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Wired /12 pin 7 segment display layout -hs-5461BS2 mbed LPC1768 OL2300 TEA1522T JN5148 IEEE802
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