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Part : BFG425W,115 Supplier : NXP Semiconductors Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : BFG425W,115 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : $0.1290 Price Each : $0.47
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BFG425W Datasheet

Part Manufacturer Description PDF Type
BFG425W NXP Semiconductors BFG425W - NPN 25 GHz wideband transistor Original
BFG425W NXP Semiconductors 900 MHz driver amplifier with the BFG425W Original
BFG425W NXP Semiconductors AN11449 - Low Noise Flat Gain 40M~1GHz DVB-C LNA with BFG425W Original
BFG425W NXP Semiconductors CDMA CELLULAR VCO WITH THE BFG425W, BFG410W AND VARACTOR BB142 Original
BFG425W Philips Semiconductors NPN 25 GHz wideband transistor Original
BFG425W,115 NXP Semiconductors BFG425 - TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, CMPAK-4, BIP RF Small Signal Original
BFG425W,115 NXP Semiconductors NPN 25 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 25 mA; f<sub>T</sub>: 25 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 28 dB; Gain @ 900 Mhz: 20@f2 dB; I<sub>C</sub>: 30 mA; ITO: 22 dBm; Noise figure: 0.8@f11.2@f2 dB; P<sub>L</sub>: 12 W; P<sub>tot</s; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original
BFG425W,135 NXP Semiconductors BFG425W - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, Large Original
BFG425W,135 NXP Semiconductors NPN 25 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 25 mA; f<sub>T</sub>: 25 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 28 dB; Gain @ 900 Mhz: 20@f2 dB; I<sub>C</sub>: 30 mA; ITO: 22 dBm; Noise figure: 0.8@f11.2@f2 dB; P<sub>L</sub>: 12 W; P<sub>tot</s; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original
BFG425W/B01,115 NXP Semiconductors BFG425W/B01 - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, 7" Original
BFG425W/B01,135 NXP Semiconductors BFG425W/B01 - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, Large Original
BFG425W/B,115 NXP Semiconductors BFG425W/B - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, 7" Original
BFG425W/C,115 NXP Semiconductors BFG425W/C - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, 7" Original
BFG425WT/R NXP Semiconductors TRANS GP BJT NPN 4.5V 0.03A 4S Original
BFG425WTR Philips Semiconductors NPN 25 GHz wideband transistor Original

BFG425W

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: AN11449 Low Noise Flat Gain 40M~1GHz DVB-C LNA with BFG425W Rev.1 â'" 22 October 2013 Application note Document information Info Content Keywords BFG425W, 40M~1GHz LNA, DVB-C, Abstract , BFG425W Revision history Rev Date Description 1.0 Initial Draft 20131022 Contact , with BFG425W 1. Introduction With the new NXP silicon bipolar double poly BFG400W series, it is , manufacturing Fig 1. AN11449 Application note BFG425W 40M ~ 1GHz DVB-C LNA EVB Demo Board All NXP Semiconductors
Original

transistor bipolar driver schematic

Abstract: BFG425W , Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a , following performance (target): transistor: BFG425W V SUP=3.6V, ISUP~30mA freq=2GHz Power Gain: ~15dB , C5 µS4 C3 µS3 µS2 IN 50 C1 BFG425W µS1 Figure 1: Driver circuit 2 GHz Driver , . Appendix II: Results of measurements: BFG425W, V SUP=3.6V, ISUP~30mA@T=25 oC Measurements PCB: f
Philips Semiconductors
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RNR-T45-97-B-0787 transistor bipolar driver schematic BFG425W APPLICATION b0787 2Ghz amplifier BFG425

BFG425W

Abstract: 900mhz driver , Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier using the new BFG425W Double Poly RFtransistor. The , circuit: The circuit is designed to show the following performance (target): transistor: BFG425W V SUP , +VSUP C5 R2 C6 OUT 50 C2 R1 C1 IN 50 BFG425W R3 R4 C7 Figure 1: Driver , measurements: BFG425W, V SUP=3.0V, ISUP~11.0mA@T=25 oC ,V CON=3.0V, ICON~0.6mA@T=25 oC Measurements PCB
Philips Semiconductors
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900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz RNR-T45-97-B-0688 900MH

2F1 SMD Transistor

Abstract: 2F2 SMD Transistor W1 W2 D1 This section describes a 900 MHz LNA with the BFG425W. The performance can be , µS4 D1 Figure 10: Schematic diagram 900 MHz LNA with BFG425W. Comp Value Purpose, comment , : PCB-layout 900 MHz LNA with BFG425W. W2 Name L1 L2 R3 L3 Description length µ-stripline , the BFG425W. The performance, for different collector currents can be summarized as follows: IC [mA , BFG425W. W2 CONCLUSION Figure 12: Schematic diagram 2 GHz LNA with BFG425W. 7 High
Philips Semiconductors
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BFG410W 2F1 SMD Transistor 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating smd transistor w2 KV96-157

stripline pcb

Abstract: BFG425W APPLICATION INFORMATION 900 MHz driver amplifier with the BFG425W Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W ABSTRACT · Description of the product The BFG425W is one of the Philips double polysilicon wideband transistors of the BFG400W series. · , amplifier with the BFG425W INTRODUCTION With the Philips double polysilicon wideband transistor BFG425W , BFG425W for a frequency of 900 MHz. CIRCUIT DESCRIPTION The following initial conditions apply for the
Philips Semiconductors
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stripline pcb BP317 hewlett packard application note 972 micro amplifier 471 philips 23

Philips npo 0805

Abstract: 5Ghz lna transistor datasheet /BFG425W@2V/10mA CMP401 MSTL PORTNUM=1 R=50 JX=0 W=0.5 mm CMP257 TWOPORT DATA=DEBBY , , Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly RF-transistor. The LNA is designed for , : BFG425W V ce=3V, Ic=5mA, V SUP~3.7V freq=1.5GHz Gain~14dB NF , Coil_2 Coil_1 R2 OUT 50 C5 IN 50 C6 C1 W1 BFG425W µS4: µS4 L1 µS4 L2
Philips Semiconductors
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CMP409 CMP250 Philips npo 0805 5Ghz lna transistor datasheet 0805CS Series 0805CS CMP230 CMP231 RNR-T45-97-B-0584 CMP408 CMP358 CMP394 CMP197 CMP18

amplifier rf 18dbm gain 18db

Abstract: BFG425 10. IP3 deviation through by-pass enhancement. Figure 11. shows 1.9 GHz LNA with BFG425W. , frequency of operation. Philips Semiconductors' 5th generation BFG425W has been chosen for CDMA LNA , . BFG425W is also easy to match while maintaining a good noise behavior. Examination of a datasheet is a , at both 900MHz and 1.9 GHz. Figure1. BFG425W minimum noise figure as a function of the collector , . Forward transducer power gain of BFG425W The forward transducer power gain represents the gain from the
Philips Semiconductors
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amplifier rf 18dbm gain 18db BFG425 spice parameters Granberg High IP3 Low-Noise Amplifier BJT IC Vce BFG425 Power amplifier

"MARKING CODE P5"

Abstract: DISC RETE S E M IC O N D U C TO R S TM M EUT BFG425W NPN 25 GHz wideband transistor , NPN 25 GH z w i d e b a n d t ransi st or BFG425W FEATURES · V ery high pow er gain · Low noise , iconductors Product specification NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In , BFG425W C H A R A C T E R IS T IC S Tj = 25 °C unless otherw ise specified. SYM BO L V(BR)CBO V (BR , 25 GHz wideband transistor BFG425W MGG683 200 c re O F) 1 cn 1OU 120 \\ C ) 1
-
OCR Scan
M3B842 T343R

F9 SOT23

Abstract: BFG425W BFG410W BFG425W BFG480W BFG21W BGA2711 BGA2748 BGA2771 BGA2776 BGA2001 BGA2003 BGA2011 BGA2012 , SOT343R BFG403W BFG410W BFG425W BFG480W BFR92AT * BFR93AT * BFR505T * BFR520T * BFS17W * IF , BGA2003 BGA2011 BGA2012 BGA2748 PRF949 BFG410W BFG425W BFG480W BFQ67T * BFR92AT * BFR93AT , Rx BFE520 BFG410W BFG425W BFG480W BFM520 BFR93AT * Tx BFR520T * BFU510 BFU540 , BGA2771 BFG21W BFG425W BGA2776 BFG480W PRF957 BGA2031/1 Please turn over for more detailed
Philips Semiconductors
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PBR951 BFC520 BGA2022 F9 SOT23 IC vco 900 1800 mhz 2.45 Ghz power amplifier sot343r PMBTH10 PMBTH81 BFT92W PBR941 PRF947

BFG425W

Abstract: amplifier 2606 APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT · Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W , Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W INTRODUCTION The Philips transistors BFG425W and BFG21W used in this amplifier, are manufactured according to
Philips Semiconductors
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amplifier 2606 texas rf power transistor transistor bf 203 STR 6507 PHILIPS TRANSISTORS

SOT343R

Abstract: SC 2272 BFG540W(/X) 9 15 BFG403W 17 4.5 BFG480W 21 4.5 BFG410W 22 4.5 BFG425W 25 4.5 BFG21W 18 , BGF310W/XR BFG325W/XR BFG403W BFG410W BFG425W BFG480W BFG21W BGA2711 BGA2748 BGA2771 BGA2776 , SOT89 SOT89 SOT343R SOT343R LNA BFG403W BFG410W BFG425W BFU510 BFU540 BGA2001 BGA2003 IF BGA2004* BGA2011 BGA2012 BGA2715 BGA2717 BGA2748 BGU2003 BFG310(W)/XR BFG325(W)/XR BFG425W , BGA2776 IF Buffer & VCO BFG310(W)/XR BFG325(W)/XR BFG410W BFG425W BFG480W BFU510 BFU540
Philips Semiconductors
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BGA2709 BGA6289 SC 2272 bga6589 BFG310W/XR 18 power amplifier sot363 PMBHT10 BFG310/XR BFG325/XR PRF547 BGA2712

BGF425W

Abstract: BFG400W BFG425W. 1998 Mar 23 20 4 Philips Semiconductors 50 W base station power amplifier for , INTRODUCTION 3 PRE-DRIVER (BFG425W) 4 DRIVER (BGY1816/BGY1916) 5 FINAL STAGE (BLV2046) 6 , using the following Philips components (see Fig.1): stage 1: BFG425W wide band transistor, stage 2 , wide band operation over 1800 to 2000 MHz (no tune design). The 5 V supply powers the BFG425W and can , Application Note AN98024 PRE-DRIVER (BFG425W) The BFG400W series wide band silicon transistors are
Philips Semiconductors
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DCS1800 PCS1900 BGF425W BFC425W RT4000 base station high power amplifier RF POWER TRANSISTOR 2200-50 philips gmsk SCA57

"BJT Transistors"

Abstract: Granberg 1.9 GHz LNA with BFG425W. Capacitor C2 and C5 will resonate at frequency of operation. C3 and C4 , generation BFG425W has been chosen for CDMA LNA application because it delivers high RF performance at low , feedback capacitance ensures high isolations. BFG425W is also easy to match while maintaining a good noise , . BFG425W minimum noise figure as a function of the collector current Gain available from the transistor vs , 900 M Hz S21 @ 1 9 G Hz . Figure 2. Forward transducer power gain of BFG425W The forward
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Original
Granberg dye C71P 24 TRANSISTOR MAKING transistor databook BJT LINE FILTER FOR 900MHZ

"MARKING CODE P5"

Abstract: BFG425W DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product , NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN , specification NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In accordance with the Absolute , Product specification NPN 25 GHz wideband transistor BFG425W CHARACTERISTICS Tj = 25 C unless , BFG425W MGG682 120 MGG683 200 handbook, halfpage handbook, halfpage Cre (fF) hFE
NXP Semiconductors
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transistor nf 37 MSB842 R77/05/

BFG425W

Abstract: BFG425W APPLICATION , Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a , ): transistor: BFG425W V SUP=3V, ISUP~10mA freq=900MHz Power Gain: >12dB VSWRi , R2 OUT 50 C2 R1 C1 IN 50 W1 BFG425W µS4: µS4 L1 µS4 L2 D1 L3 W2 , diameter of via-hole Appendix II: Results of simulations and measurements: BFG425W, V SUP=3.0V, ISUP
Philips Semiconductors
Original
RNR-T45-97-B-0686 Z048

micro amplifier 471

Abstract: BFG425W APPLICATION INFORMATION 1.9 GHz low noise amplifier with the BFG425W Philips Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W CIRCUIT DIAGRAM R5 handbook , Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W COMPONENT LIST Table , , MANUFACTURER PURPOSE, COMMENT TR1 BFG425W SOT343R Philips RF transistor R1 39 k 0603 , amplifier with the BFG425W BOARD LAYOUT The layout has been designed with the Hewlett Packard Microwave
Philips Semiconductors
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philips application notes Hewlett-Packard transistor microwave MGS733

43p transistor

Abstract: BB142 , Development CDMA CELLULAR VCO WITH THE BFG425W, BFG410W AND VARACTOR BB142 Abstract: This application , fifth generation BFG425W and BFG410W Double Poly RF-transistors. The BB142 is a new varactor specially , noise at 60 kHz , R2 22k R3 390 R4 2k R5 1k R6 100 L1 82n L2 12n L3 4n T1 BFG425W T2 BFG410W , L1 L2 L3 T1 T2 Varactor 22k 390 2k 1k 100 82n 12n 4n (W=0.7mm;L=9.6mm) BFG425W
Philips Semiconductors
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43p transistor 0402_PHILIPS tdk VCO TRANSISTOR noise figure measurements 1K 1608 2K 0402 RNR-45-98-B-0827 IS-95

uaf4000

Abstract: toshiba smd marking code transistor SOT343 SOT343 SOT343 SOT23 SOT416 SOT323 Type BFG410W BFG425W BFG480W BFR520T BFR505T , Product MMIC Low noise wideband amplifier Product Type BFG21W BFG425W BFG480W BGA2031/1 , Product Bipolar transistor MMIC Type BFG410W BFG425W BFG480W BGA2022 * = 2 stage variable , BFG410W BFG425W BFG21W BFG480W BFG410W BFG480W BFG425W, BFG410W BGA2003 BGA2001 BGA2003 BGA2012 BGA2011 BFG425W, BFG21W BGA2022 BFG410W, BFG425W NXP Semiconductors RF Manual 9th edition
NXP Semiconductors
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uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset vHF amplifier module 2450Mhz M74 marking TEF6860HL TEF6862HL
Abstract: DISCRETE SEMICONDUCTORS DAT BFG425W NPN 25 GHz wideband transistor Product specification , wideband transistor BFG425W FEATURES PINNING ï'· Very high power gain PIN DESCRIPTION , NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In accordance with the Absolute Maximum , K/W NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W , Product specification NPN 25 GHz wideband transistor BFG425W MGG682 120 MGG683 200 NXP Semiconductors
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2SK508

Abstract: TEA5767 BFG425W (S21) ` A A C B B C A B- C- RF RF 30 2 BFG425W 3GHz S21 1 3GHz 2 0 1 |r|=0.34 3 (r)=-50 50 Zo=50 65.2 1.38pF BFG425W 20log(|r|)=-9.36dB Xcon=-Im{Z}=-{-j38.4 }=+j38.4 L , , , BFG425W, NPN 25GHz Philips , , 1999 7 23, , BGA2003, MMIC Philips , , 2000 Dec 04, , BGA2022, MMIC , /al)plicationnotes/900MHAP2.pdf BFG410W BFG410W, BFG425W BFG425W BFG425W BFG425W RF
Philips Semiconductors
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2SK508 TEA5767 2SK147BL IRF power mosfets catalog 2SK163 Funkamateur BB202 BGM1011 BFQ591 BB140-01 BAP51-01 BAP63-01

BB142

Abstract: 2SK163 SOT343 SOT343 SOT363 BFG410W BFG425W BFG480W BGA2022 * MMIC MMIC IF RF 1880MHz PA , PRF949 BFS17W BFG410W BFG425W BFG480W BFR520T BFR505T BFS540 SOD523 SOD523 SOD523 SOD523 , SOT363 BFG21W BFG425W BFG480W BGA2031/1 BGA2771 BGA2776 SOT343 SOT343 SOT363 SOT363 SOT363 BFG21W BFG480W BGA2031/1 BGA2771 BGA2776 ad* = 2 BFG21W BFG480W BFG410W BFG425W BFG21W BFG480W BFG410W BFG480W BFG425W, BFG410W, BB142 BGA2003 BGA2001 BGA2003 BGA2012 BGA2011 BFG425W
Philips Semiconductors
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BF245c SMD bap50 spice BB184LX BF1109 spice bf998 on4890 TZA30

BFQ93A

Abstract: Philips varicap SOT343 SOT343 SOT343 SOT23 SOT416 SOT323 BFG410W BFG425W BFG480W BFR520T BFR505T BFS540 , BFG425W BFG480W BGA2022 Wideband transistor VCO varicap diodes Wideband transistor , amplifier MMIC Wideband transistor amplifier * Gen. Purpose wideband ampl. BFG21W BFG425W , Philips RF Manual 7th Edition BFG21W BFG480W BFG410W BFG425W BFG21W BFG480W BFG410W BFG480W BFG425W, BFG410W, BB142 BGA2003 BGA2001 BGA2003 BGA2012 BGA2011 BFG425W, BFG21W BGA2022 BFG410W
Philips Semiconductors
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BFQ93A Philips varicap BFG18 MPF102 modelS philips catv 860 amplifier ic j175 fet

diode varicap BB 112

Abstract: SMD TRANSISTOR MARKING 02N 1PS10SB82 1PS66SB82 Package SOT343 SOT343 SOT343 SOT23 SOT416 SOT323 Type BFG410W BFG425W , LNAs for 900&2000MHz with high IP3 BFG21W BFG480W BFG410W BFG425W BFG21W BFG480W BFG410W BFG480W BFG425W, BFG410W BGA2003 BGA2001 BGA2003 BGA2012 BGA2011 BFG425W, BFG21W BGA2022 BFG410W, BFG425W : BGA2771 MMIC 6SOT363 SMD MMIC Monolithic Integrated Circuit BGA27xx NXP Semiconductors RF Manual 10th edition Type BFG21W BFG425W
NXP Semiconductors
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diode varicap BB 112 SMD TRANSISTOR MARKING 02N SOT23-6 MARKING 02n transistor smd marking CODE Wb smd code marking NEC rf transistor smd transistor m29 sot343 BFU725F
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