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BF998E6327HTSA1 Infineon Technologies AG RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN visit Digikey Buy
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BF998 Datasheet

Part Manufacturer Description PDF Type
BF998 Infineon Technologies Single Non Biased; Package: PG-SOT143-4; I<sub>D</sub> (max): 30.0 mA; P<sub>tot</sub> (max): 200.0 mW; g<sub>fs</sub> (typ): 24.0 mS; G<sub>p</sub> (typ): 20.0 dB; F (typ): 1.8 dB; Original
BF998 Infineon Technologies Silicon N-Channel MOSFET Tetrode Original
BF998 Infineon Technologies Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, gain controlled input stages up to 1GHz. Original
BF 998 Infineon Technologies TRANS MOSFET N-CH 12V 0.03A 4SOT-143 Original
BF998 NXP Semiconductors BF998 - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS Original
BF998 Philips Semiconductors Silicon N-Channel MOSFET Tetrode Original
BF998 Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Original
BF998 Siemens Cross Reference Guide 1998 Original
BF998 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BF998 Siemens Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Original
BF998 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original
BF998 Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143 Original
BF998 N/A Shortform Datasheet & Cross References Data Scan
BF998 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BF998 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BF998 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BF998 Philips Semiconductors Silicon n-channel dual gate MOS-FET Scan
BF998 Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Scan
BF998,215 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original
BF998,215 NXP Semiconductors BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal Original
Showing first 20 results.

BF998

Catalog Datasheet MFG & Type PDF Document Tags

BF998

Abstract: MGA002 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R , Marking code: MOp. MAM039 Fig.1 Simplified outline (SOT143) and symbol; BF998. g2 91 T» 2 1 Top view âºH-4 ^âºl-W, s,b Marking code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. , Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R LIMITING VALUES In accordance , . Fig.3 Power derating curves; BF998. MGA002
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OCR Scan
MGE802 bf998 Mop Dual-Gate cfs 455 j cfs 455 f MARKING sih 200MH

BF998

Abstract: /BF998R/ BF998RW BF998A/BF998RA/ BF998RAW BF998B/BF998RB/ BF998RBW Min 12 ±V(BR)G1SS Type , 85011 Rev. 4, 23-Jun-99 www.vishay.de â'¢ FaxBack+1-408-970-5600 5(9) BF998/BF998R/BF998RW_ , BF998/BF998R/BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , +1-408-970-5600 1 (9) BF998/BF998R/BF998RW ViSHAY Vishay Telefunken Absolute Maximum Ratings Tamb = 25 , Number 85011 Rev. 4, 23-Jun-99 BF998/BF998R/BF998RW Vishay Telefunken Electrical AC Characteristics
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OCR Scan
BF998/BF998R/BF998RW

BF908 Application Note

Abstract: BF998 BF998, BF908,BF1100, (SOT143) BF998R, BF908R.BF1100R, (SOT143R) BF998V\R, BF908WR.BF1100WR, (SOT343R , also for 9Vthe BF998, BF998R, BF998WR, BF908, BF908R and BF908WR with somewhat worse performance , . We have two types of Mosfets without integrated bias, BF908 and BF998. These Mosfets are depletion , the BF904 and BF998. The principle of the noise behaviour as a function of the source conductance of , the BF908 are higherthan that of the BF998. Due to this the cross-modulation performance after 40 dB
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OCR Scan
BF909R BF908 Application Note bf1109 mosfets fl philips TRANSISTOR mosfet 9V JBT SWITCH RNR-T45-97-F-805 BF1109 BF1109R BF1109WR BF909 BF1105

g1 TRANSISTOR SMD MARKING CODE

Abstract: marking code ff SMD Transistor ) Printed-circuit board. Fig.3 Power derating curves; BF998. Fig.4 Power derating curve; BF998R. 1996 Aug , DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs , television tuners and professional communications equipment. Top view handbook, halfpage BF998; BF998R , .1 Simplified outline (SOT143) and symbol; BF998. handbook, halfpage d 4 g2 g1 3 PINNING PIN 1 2 3 4 , code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA SYMBOL
Philips Semiconductors
Original
g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 MAM040

application BF998

Abstract: BF998R 800MHz / BF998RW BF998A/BF998RA/ BF998RAW BF998B/BF998RB/ BF998RBW IDSS IDSS IDSS ­VG1S(OFF) ­VG2S(OFF) 4 4 9.5 1.0 , BF998/BF998R/BF998RW Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , , 23-Jun-99 www.vishay.com 1 (8) BF998/BF998R/BF998RW Vishay Telefunken Maximum Thermal , Number 85011 Rev. 4, 23-Jun-99 BF998/BF998R/BF998RW Vishay Telefunken Typical Characteristics (Tamb , www.vishay.com 4 (8) Document Number 85011 Rev. 4, 23-Jun-99 BF998/BF998R/BF998RW Vishay Telefunken VDS =
Vishay Telefunken
Original
application BF998 BF998R 800MHz 88/540/EEC 91/690/EEC D-74025

PHILIPS MOSFET MARKING

Abstract: BF998 ï»¿â  ^53^31 4L1 â  APX N AMER PHILIPS/DISCRETE b?E D BF998 Silicon n-channel dual gate , MOS-FET Product specification BF998 MECHANICAL DATA Dimensions in mm Marking code BF998 = MOp m , specification - N AMER PHILIPS/DISCRETE b7E D - Silicon n-channel dual gate MOS-FET BF998 LIMITING VALUES , specification N ADER PHILIPS/DISCRETE b7E D Silicon n-channel dual gate MOS-FET BF998 STATIC CHARACTERISTICS , /DISCRETE b?E D - Silicon n-channel dual gate MOS-FET BF998 vds (v) Fig.4 Output characteristics; Vq2-s =
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OCR Scan
PHILIPS MOSFET MARKING TRANSISTOR mosfet BF998 dual gate mosfet mcb351 n-channel dual gate S3T31 53T31
Abstract: Marking Package BF998 BF998A-GS08 or BF998B-GS08 MO SOT143 BF998A BF998A-GS08 MO SOT143 BF998B BF998B-GS08 MO SOT143 BF998R BF998RA-GS08 or BF998RB-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RB BF998RB-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 WMO SOT343R BF998RAW BF998RAW-GS08 WMO SOT343R , 10.5 mA BF998B/ BF998RB/ BF998RBW VDS = 8 V, VG1S = 0, VG2S = 4 V BF998/ BF998R Vishay Intertechnology
Original
2002/95/EC 2002/96/EC
Abstract: DISCRETE SEMICONDUCTORS DAT BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product , Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES ï'· Short channel transistor with high , diodes between gates and source. Fig.1 Simplified outline (SOT143B) and symbol; BF998. d , (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX , specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R LIMITING VALUES In accordance with NXP Semiconductors
Original
R77/02/

BF998

Abstract: bf998 mosfet tetrode application note BF998 3 Silicon N-Channel MOSFET Tetrode 4 · Short-channel transistor with high S/C , : Electrostatic discharge sensitive device, observe handling precaution! Type BF998 Marking MOs 1 , calculation of R thJA please refer to Application Note Thermal Resistance 1 Apr-14-2003 BF998 , voltage VDS = 8 V, VG1S = 0 , ID = 20 µA 2 Apr-14-2003 BF998 Electrical Characteristics , VDS = 8 V, VG2S = 4 . -2 V , f = 800 MHz 3 Apr-14-2003 BF998 Total power dissipation Ptot
Infineon Technologies
Original
VPS05178 bf998 mosfet tetrode application note p 1S marking SOT143

BF998B

Abstract: BF998 VISHAY BF998 BF998A-GS08 or BF998B-GS08 MO SOT143 BF998A BF998A-GS08 MO SOT143 BF998B BF998B-GS08 MO SOT143 BF998R BF998RA-GS08 or BF998RB-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RB BF998RB-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 WMO SOT343R BF998RAW BF998RAW-GS08 WMO SOT343R BF998RBW BF998RBW-GS08 , , VG1S = 0, VG2S = 4 V BF998/ BF998R/ BF998RW BF998A/ BF998RA/ BF998RAW Drain current IDSS
Vishay Semiconductors
Original
BF998 VISHAY

BF998RW

Abstract: BF998 /BF998R/ BF998RW BF998A/BF998RA/ BF998RAW BF998B/BF998RB/ BF998RBW Symbol V(BR)DS 50 nA , BF998/BF998R/BF998RW Vishay Semiconductors N­Channel Dual Gate MOS-Fieldeffect Tetrode , www.vishay.com 1 (8) BF998/BF998R/BF998RW Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 , 85011 Rev. 4, 23-Jun-99 BF998/BF998R/BF998RW Vishay Semiconductors Typical Characteristics (Tamb , . Output Capacitance vs. Drain Source Voltage www.vishay.com 3 (8) BF998/BF998R/BF998RW Vishay
Vishay Semiconductors
Original

bf998

Abstract: bf998 mosfet tetrode application note 76 °C, BF998, BF998R 200 TS 94 °C, BF998W Unit 200 Storage temperature Tstg -55 , Channel - soldering point 1) Rthchs Value Unit K/W BF998, BF998R 370 BF998W 280 , power dissipation Ptot = (TS) BF998, BF998R BF998W 220 220 mA mA 160 P tot , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality , -13-2004 BF998. Electrical Characteristics Parameter Symbol Values Unit min. typ. max
Infineon Technologies
Original

BF 998

Abstract: 4551 BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 1 (8) BF998/BF998R Electrical DC Characteristics Tamb , Semiconductors Rev. A2, 07-Mar-97 BF998/BF998R Common Source S-Parameters VG2S = 4 V, Z0 = 50 W S11 , ­28.6 ­31.3 ­34.0 ­36.9 ­39.9 deg 3 (8) BF998/BF998R Typical Characteristics (Tj = 25 , Voltage TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 BF998/BF998R 10 ­5 1V ­10 0 ­20
Temic Semiconductors
Original
4551 BF998/BF998R

TRANSISTOR mosfet BF998

Abstract: BF998 2007-04-20 BF998. Total power dissipation Ptot = (TS) BF998, BF998R Output characteristics ID = (V , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality , ), BF998, BF998R Rthchs 370 K/W 1Pb-containing 2For package may be available upon special , BF998. Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol , 2007-04-20 BF998. Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter
Infineon Technologies
Original
BF998 marking code 3G1 transistor BFP181 BFP181R

BF998

Abstract: MGA002 DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs , BF998; BF998R FEATURES · Short channel transistor with high forward transfer admittance to input , .1 Simplified outline (SOT143) and symbol; BF998. d handbook, halfpage 3 CAUTION 4 g2 The , Marking code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA , Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R
Philips Semiconductors
Original
BF998 depletion MGE808 MGE814 MGE812 bf-998 bb405 MBC844

bf998

Abstract: application BF998 40 3 Mar-01-2005 BF998. Total power dissipation Ptot = (TS) BF998, BF998R Output , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality , device, observe handling precaution! Type BF998 BF998R Parameter Package SOT143 SOT143R 1=S 1=D 2 , ), BF998, BF998R °C Value 370 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Mar-01-2005 BF998. Electrical Characteristics Parameter DC
Infineon Technologies
Original

ap 4606

Abstract: SFE 7.02 MHz BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 Temic S e m i c o n d u c t o r s BF998/BF998R type , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 87 BF998/BF998R Common Source S-Parameters V G2S = 4 V , , 07-Mar-97 Tem ic S e m i c o n d u c t o r s BF998/BF998R Topical Characteristics (Tj = 25 , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 Tem ic S e m i c o n d u c t o r s BF998/BF998R > 1 2
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OCR Scan
ap 4606 SFE 7.02 MHz t469 ap 4606 ic SFE 8 1S/02S

BF998 depletion

Abstract: BF988 viSM A Y _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate , ) BF998/BF998R Vishay Telefunken Electrical DC Characteristics Tamb = 25°C, unless otherwise specified , DS = 0 V ds = 8 V, V q is = 0> V G2S = 4 V V G2S = V DS BF998 /BF998R BF998 A/BF988 RA BF998 B , A Y _ BF998/BF998R Vishay Telefunken Common Source S-Parameters , +1-408-970-5600 3 (8) BF998/BF998R Vishay Telefunken Typical Characteristics (Tamb = 2 5 ° C unless otherw ise
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OCR Scan
BF988 bf988 sot 143

BF998

Abstract: 3G1 transistor -29-2004 BF998. Total power dissipation Ptot = (TS) BF998, BF998R Total power dissipation Ptot = (TS) BF998W , device, observe handling precaution! Type BF998 BF998R BF998W Maximum Ratings Parameter Package , , BF998R TS 94 °C, BF998W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF998, BF998R BF998W Tstg Tch Symbol Rthchs -55 . 150 150 °C Value 370 , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality
Infineon Technologies
Original

bf998

Abstract: application BF998 Values typ. max. Unit 3 2006-02-08 BF998. Total power dissipation P tot = (TS) BF998, BF998R , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality , ) sensitive device, observe handling precaution! Type BF998 BF998R Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin , drain current Gate 1/ gate 2-source current Total power dissipation TS 76 °C, BF998, BF998R Storage , Unit V mA Thermal Resistance Parameter Channel - soldering point1), BF998, BF998R Symbol Rthchs
Infineon Technologies
Original

BF 195 pin configuration

Abstract: Bf 353 3 1 1 4 4 2 3 94 9278 94 9279 BF998 Marking: MO Plastic case (SOT 143) 1 , Dimensions of BF998 in mm 0.28 0.22 1.1 0.9 technical drawings according to DIN specifications 94
Temic Semiconductors
Original
BF 195 pin configuration Bf 353 526 8694 010 f 4556

bf998

Abstract: bf998 mosfet tetrode application note BF998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality , ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998 , calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-10-2001 BF998 , -10-2001 BF998 Electrical Characteristics Symbol Parameter Values Unit min. typ. max , , f = 800 MHz 3 Gps Aug-10-2001 BF998 Output characteristics ID = f (VDS ) Total
Infineon Technologies
Original
EHT07301 EHT07302 EHT07303 EHT07304 EHT07305 EHT07306

D 998 TRANSISTOR

Abstract: Q62702-F1129 BF998/BF998R/BF998RW Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , gain 1 2 2 1 94 9279 13 579 94 9278 95 10831 3 4 4 3 BF998 Marking , , 23-Jun-99 www.vishay.com 1 (8) BF998/BF998R/BF998RW Vishay Telefunken Maximum Thermal , = 8 V, VG1S = 0, VG2S = 4 V Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS BF998/BF998R , Number 85011 Rev. 4, 23-Jun-99 BF998/BF998R/BF998RW Vishay Telefunken Typical Characteristics (Tamb
Siemens
Original
Q62702-F1129 D 998 TRANSISTOR marking code g1s

BF998

Abstract: BF998W BF998/BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , R 94 9279 I- I R R BF998 Marking: MO Plastic case (SOT 143) 1 = Source; 2 = Drain; 3 = , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 Temic S e m i c o n d u c t o r s BF998/BF998R type , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 87 BF998/BF998R Common Source S-Parameters V G2S = 4 V , , 07-Mar-97 Tem ic S e m i c o n d u c t o r s BF998/BF998R Topical Characteristics (Tj = 25
Infineon Technologies
Original
SOT 343 MARKING BF VPS05605
Showing first 20 results.