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Part : BF961 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : BF961 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BF961 Supplier : Siemens Manufacturer : Bristol Electronics Stock : 10 Best Price : $4.3680 Price Each : $6.72
Part : BF961E-7039 Supplier : Siemens Manufacturer : Chip One Exchange Stock : 620 Best Price : - Price Each : -
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BF961 Datasheet

Part Manufacturer Description PDF Type
BF961 Siemens Cross Reference Guide 1998 Original
BF961 Temic Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original
BF961 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original
BF961 Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original
BF961 N/A Shortform Transistor PDF Datasheet Scan
BF961 N/A Shortform Datasheet & Cross References Data Scan
BF961 N/A Cross Reference Datasheet Scan
BF961 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BF961 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BF961 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BF961 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BF961 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BF961 Philips Components Philips Data Book Scan Scan
BF961A Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode Original
BF961A Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original
BF961B Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode Original
BF961B Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original

BF961

Catalog Datasheet MFG & Type PDF Document Tags

BF961

Abstract: BF961A IDSS IDSS IDSS Unit V ±IG1SS BF961 BF961A BF961B Max. 4 4 9.5 Electrical AC , BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device , G2 D 4 2 G1 94 9307 96 12647 1 BF961 Marking: BF961 Plastic case (TO 50) 1 , Cu TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 1 (7) BF961 Electrical DC Characteristics , 2.5 dB TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 BF961 Typical Characteristics (Tj = 25
Temic Semiconductors
Original
100MHz-500MHz 88/540/EEC 91/690/EEC D-74025

bf961

Abstract: = 15 V, VG1S = 0, VG2S = 4 V BF961 BF961A BF961B Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS , BF961 Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , feedback capacitance D Low input capacitance G2 G1 D 1 BF961 Marking: BF961 Plastic case (TO 50) 1 , Document Number 85002 Rev. 3, 20-Jan-99 www.vishay.com 1 (7) BF961 Vishay Telefunken Electrical DC , 2.5 www.vishay.com 2 (7) Document Number 85002 Rev. 3, 20-Jan-99 BF961 Vishay Telefunken
Vishay Telefunken
Original

BF961

Abstract: bf-961 +1-408-970-5600 1 (7) Vishay Telefunken Electrical DC , is ± !g is s ± V G2 S Ü G 2SS V d s = 15 V, V q = 0, V q2s = 4 V BF961 BF961A , +1-408-970-5600 3 (7) BF961_ Vishay Telefunken 10 5 VISH&Y o w -10 a -20 -25 , Number 85002 Rev. 3, 20-Jan-99 www.vishay.de · FaxBack+1-408-970-5600 5 (7) BF961_ Vishay , ViSH A Y BF961 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion
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OCR Scan
bf-961

TO50 package

Abstract: BF961 Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part BF961 BF961A BF961B Ordering Ccode BF961A or BF961B BF961A BF961B BF961 BF961 BF961 Marking , VG1S(OFF) - VG2S(OFF) 4 4 9.5 BF961A BF961B Gate 1 - source cut-off voltage Gate 2 - source cut-off , BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , -Apr-05 www.vishay.com 1 BF961 Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise
Vishay Semiconductors
Original
TO50 package 2002/95/EC 2002/96/EC

BF961

Abstract: BF961S 2 S S Ü G 1SS ÜG2SS BF961 BF961A BF961B Id Id ss ss Id s s - V G lS(OFF) - V g 2S , Temic S e m i c o n d u c t o r s BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode , capacitance Low input capacitance G2 Q Gl Q BF961 Marking: BF961 Plastic case (TO 50) 1 = Drain, 2 = , , 16-Jan-97 39 BF961 Electrical DC Characteristics Tamb = 25°C, unless otherwise specified , -Jan-97 Te m ic S e m i c o n d u c t o r s BF961 Typical Characteristics (T, = 25 °C unless otherwise
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OCR Scan
BF961S agos

BF961

Abstract: TO50 package Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part Ordering Ccode Marking Package BF961 BF961A or BF961B BF961 TO50 BF961A BF961A BF961 TO50 BF961B BF961B BF961 TO50 , IDSS 20 mA 4 10.5 mA IDSS BF961B 4 IDSS BF961A 9.5 20 mA Gate , BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3
Vishay Semiconductors
Original

BF961

Abstract: BF961A V BF961 BF961A BF961B IDSS IDSS IDSS 4 4 9.5 Electrical AC Characteristics VDS = , BF961 Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , input capacitance 3 G2 D 4 2 G1 94 9307 96 12647 1 BF961 Marking: BF961 , . 3, 20-Jan-99 Value 450 www.vishay.de · FaxBack +1-408-970-5600 1 (7) BF961 Vishay , 15 3.7 1.6 25 1.6 20 50 1.8 2.5 Document Number 85002 Rev. 3, 20-Jan-99 BF961
Vishay Telefunken
Original

BF961

Abstract: BF961A Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part Ordering Ccode Marking Package BF961 BF961A or BF961B BF961 TO50 BF961A BF961A BF961 TO50 BF961B BF961B BF961 TO50 , 10.5 mA IDSS BF961B 4 IDSS BF961A 9.5 20 mA Gate 1 - source cut-off , BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3
Vishay Semiconductors
Original

BF961

Abstract: VISHAY BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , -50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 , ) mm3 plated with 35 µm Cu Document Number 85002 Rev. 1.5, 03-Sep-04 www.vishay.com 1 BF961 , Document Number 85002 Rev. 1.5, 03-Sep-04 VISHAY BF961 Vishay Semiconductors 24 22 20 18 16 14 , Admittance Document Number 85002 Rev. 1.5, 03-Sep-04 www.vishay.com 3 BF961 Vishay Semiconductors
Vishay Semiconductors
Original

BF961

Abstract: BF961A ±IG2SS IDSS IDSS IDSS Unit V ±IG1SS BF961 BF961A BF961B Max. 4 4 9.5 Electrical , BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device , 4 1 BF961 Marking: BF961 Plastic case (TO 50) 1 Drain, 2 Source, 3 Gate 1, 4 Gate 2 + , Cu TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 1 (6) BF961 Electrical DC Characteristics , -Jan-97 BF961 Typical Characteristics (Tj = 25_C unless otherwise specified) Y21S ­ Forward Transadmittance
Temic Semiconductors
Original

BF961

Abstract: BF961A Unit mS pF pF fF pF dB dB dB VDS = 15 V, VG1S = 0, VG2S = 4 V BF961 BF961A BF961B , BF961 Vishay Semiconductors N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , input capacitance 3 G2 D 4 2 G1 94 9307 96 12647 1 BF961 Marking: BF961 , . 3, 20-Jan-99 Value 450 www.vishay.com 1 (7) BF961 Vishay Semiconductors Electrical DC , Number 85002 Rev. 3, 20-Jan-99 BF961 Vishay Semiconductors Typical Characteristics (Tamb = 25
Vishay Semiconductors
Original

bf-961

Abstract: VISHAY BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , -50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 , ) mm3 plated with 35 µm Cu Document Number 85002 Rev. 1.5, 20-Aug-04 www.vishay.com 1 BF961 , Document Number 85002 Rev. 1.5, 20-Aug-04 VISHAY BF961 Vishay Semiconductors 24 22 20 18 16 14 , Input Admittance Document Number 85002 Rev. 1.5, 20-Aug-04 www.vishay.com 3 BF961 Vishay
Vishay Semiconductors
Original

BF961

Abstract: 3300-MHz IDSS IDSS IDSS Unit V ±IG1SS BF961 BF961A BF961B Max. 4 4 9.5 Electrical AC , BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device , G2 D 4 2 G1 94 9307 96 12647 1 BF961 Marking: BF961 Plastic case (TO 50) 1 , Cu TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 1 (7) BF961 Electrical DC Characteristics , 2.5 dB TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 BF961 Typical Characteristics (Tj = 25
Temic Semiconductors
Original
3300-MHz

BF961

Abstract: VISHAY BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , -50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 , ) mm3 plated with 35 µm Cu Document Number 85002 Rev. 1.5, 20-Aug-04 www.vishay.com 1 BF961 , Document Number 85002 Rev. 1.5, 20-Aug-04 VISHAY BF961 Vishay Semiconductors 24 22 20 18 16 14 , Input Admittance Document Number 85002 Rev. 1.5, 20-Aug-04 www.vishay.com 3 BF961 Vishay
Vishay Semiconductors
Original

BF961

Abstract: 15V, VGis = 0, VG2S = 4 V BF961 BF961A BF961B toss toss toss VDS = 15V, VG2s = 4V, !D = , , input capacitance -OD BF961 Marking: BF961 Plastic case (TO 50) 1-Drain, 2=Source, 3=Gate 1, 4
New Jersey Semiconductor
Original

BF961

Abstract: BF961A input capacitance 3 2 4 1 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 , IG2SS 100 nA 10 20 mA Drain current VDS = 15 V, VG1S = 0 V, VG2S = 4 V BF961A B
Temic Semiconductors
Original
BF 961 Book Microelectronic Marking 9282 marking GG

BF966

Abstract: BF961 capacitance 3 2 4 1 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 Absolute Maximum Ratings
Temic Semiconductors
Original
BF966

BF964

Abstract: BF961 capacitance 3 2 4 1 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 Absolute Maximum Ratings
Temic Semiconductors
Original
BF964 964s

BB509

Abstract: Varicap bb112 C88 47k 47k C102 5V/0V R57 R56 C87 47k 0V 0V/5V BF961 G2 R64 C91 , BA479S 9V X1 1 0µH22 C17 10p P2 50k 0µH33 BF961 R11 C16 BB112 100n L13 BF961 2V9 0V R6 C13 330 330 C11 2V1 220p L11 L9 D13 D11 R4 , 5400 ­ 13200 kHz 13200 ­ 32000 kHz Preselector The active element is a type BF961 dual-gate
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Original
BB509 Varicap bb112 elektor receiver ELEKTOR PE1GIC general coverage receiver sfr455j varicap bb509

BF963

Abstract: BF544 . 200 200 200 200 200 200 200 200 200 1 1 1 1 1 1 1 1 1 BF963 BF964S BF961 BF966S BF965 BF988 -
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OCR Scan
BF930 BF993 BF998 BF544 BF987 CFY30 triode sot23 BF96 gaasfets BF994S BF995 BF996S BF997

BF961

Abstract: SIEM ENS Silicon N Channel MOSFET Tetrode BF961 â'¢ For input and mixer stages in FM and VHF TV tuners Type Marking Ordering Code BF 961 - Q62702-F518 Pin Configuration 2 1 3 4 S D Gz Package1 ) Gì X-plast Maximum Ratings Parameter Symbol Values Unit Drain-source voltage Vds 20 V mA Drain current Id 30 Gate 1/gate 2 peak source current ± I G /2 M 1S 10 Total power dissipation, Ta < 60 "C P lo t
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OCR Scan
EHM07003
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