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BDX62B Datasheet

Part Manufacturer Description PDF Type
BDX62B Comset Semiconductors PNP SILICON DARLINGTON Original
BDX62B Philips Semiconductors Silicon Darlington Power Transistors Original
BDX62B Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=8 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=90 Original
BDX62B Mullard Quick Reference Guide 1977/78 Scan
BDX62B N/A Semiconductor Master Cross Reference Guide Scan
BDX62B N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDX62B N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDX62B N/A Shortform Electronic Component Datasheets Scan
BDX62B N/A Shortform Transistor Datasheet Guide Scan
BDX62B N/A Basic Transistor and Cross Reference Specification Scan
BDX62B N/A Shortform Transistor PDF Datasheet Scan
BDX62B N/A Shortform Transistor PDF Datasheet Scan
BDX62B N/A Diode, Transistor, Thyristor Datasheets and more Scan
BDX62B Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan
BDX62B Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan

BDX62B

Catalog Datasheet MFG & Type PDF Document Tags

BDX62

Abstract: BDX62B (RMS) IC Collector Current ICM IB PT Value BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A
Comset Semiconductors
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62AB

BDX62

Abstract: BDX62A BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C -60 -80 -100 -120 -60 -80 -100 -120 -5.0 Unit V V V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A PT Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C TJ Junction Temperature -55 to +200 °C TS Storage Temperature BDX62 BDX62A BDX62B BDX62C IB @ TC = 25
Comset Semiconductors
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BDX62

Abstract: transistor BDX62 N AMER PHILIPS/DISCRETE 2SE D â  bbS3131 D01TIN7 3 â  BDX62; 62A BDX62B; 62(3 SILICON , ; 62A BDX62B; 62C 25EL D btsB^i oomia S T-33-31 r' < I_"_ â'"_i_I Ri typ. 6 kft R2 typ , DOmil 7 â  BDX62; 62A BDX62B; 62C â  j jj J V T-33-31 CHARACTERISTICS * Tj = 25 °C unless , °C; bdx62b â'¢ -'CBO < 2 mA" iE s o; -vCB = 70 v; Tj= 200 BDX62C Ib = 0;-Vce = -1^Vceo -'ceo < 0 , Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BDX62; 62A BDX62B; 62C â'¢L
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BDX63 BDX63A BDX63B BDX63C transistor BDX62 fxs 100 10 S3131 7Z821SS

BDX62A

Abstract: BDX62B (RMS) IC Collector Current ICM IB PT Value BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A
Comset Semiconductors
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Fh21e
Abstract: ( r N AMER PHILIPS/DISCRETE 2SE D â  3 thS3i3i o a m M ? J BDX62; 62A BDX62B , BDX62; 62A BDX62B; 62C 5 â  T-33-31 r Rl typ. 6 k ft R2 typ. 80 n Fig. 2 Circuit , T â  BDX62; 62A BDX62B; 62C l T-33-31 CHARACTERISTICS . Tj = 25 °C unless , ; BDX62A l E = 0; - V CB = 60 V ; T j = 200 °C; BDX62B l E = 0; â'" CB = 70 V; Tj = 200 °C; BDX62C V , » bb53T31 D O m s O BDX62; 62A BDX62B; 62C T-33-31 CHARACTERISTICS (continued) Switching times -
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S3T31 T-33-3T 7Z6732S 53T31

BDX62B

Abstract: BDX62B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 8A 7.92 (0.312) 12.70 (0.50) All Semelab
Semelab
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Abstract: BDX62B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can Semelab
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Abstract: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase Semelab
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BDX62B

Abstract: BDX62B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can
Semelab
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bdx65b

Abstract: bdx32 SEMELAB LTD 37E ]> Ö1331Ö7 0DD004b M SMLB T - 3 3 -¿>/ 'C cont Type No. Option'1 *^ Polari'y Package v CEO hFE< Vc e / ' c PD BDX14 BDX16 BDX18 BDX20 BDX27 BDX28 BDX29 BDX30 BDX31 BDX32 BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX35 BDX53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A HI-REL HI-REL SCREEN SCREEN HI-REL HI-REL HI-REL
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0DD004 T0220 T0126

but16

Abstract: MJ12005 POWER TRANSISTORS â'" BIPOLAR METAL (continued) TO-2Q4AA (FORMERLY TO-3) (continued) Resistive Switching lcCont VcEO (sus) Device Type hFE (W lc t8 US tf US (di lc h MH? PD (Case) Watts Amps Max Volts Min NPN PNP Min/Max Amp Max Max Amp Min (al 25°C 8 60 MJ1000 BDX63 MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A MJ901 BDX62A 1k min 1k min 3 3 90 90 100 BDX63B BDX62B 1k min 3 90 120 MJ4247 MJ4237 40 min 3 0.4 typ 0.18 typ 5 20 '90 250 2N6306 15/75 3 1.6 0.4
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MJ10011 MJ12005 2N3792 MJ2501 2N3442 MJ423 but16 2N3792 MOTOROLA BDX66 MOTOROLA 2N6307 2N6308 2N6545 MJ13080 MJ6503 MJ16006

diode bdx64c

Abstract: bdx65b SEMELAB LT» Type Na "J&BAX65 37E D â  Ã"1331Ã"7 GODDGTfi 1 MANUFACTURING ISMLB I BCY32A BCY33A BCY34A BCY58 , BCY59 ) BCY78 I BCY79 BD106AN BD106B BD107A BD107B BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A |^BDX65B BDX65C BS/CECC Polarity Package VCEO 'c cont - BS-0 BS-0 UBS-O, CV-0 ' BS-O, CV-0 Diode Array NPN PNP PNP PNP T077 T018 T018 T05 T05 40 45 45 64 64 0.3 0.6 0.6 0.1 0.1 BS-O, CV-0 BS-O, CV-0 BS-O
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diode bdx64c pnp 039 BD106 10-35* DIODE sot9

TRANSISTOR BDX

Abstract: BDX63A BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase
Semelab
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TRANSISTOR BDX Transistor 63B transistor BDX 65 darlington complementary power amplifier

k 117

Abstract: k117 SENELAB LTD 37E J> m 0133107 OOOmOTfl : MAiMUFACTURIIMG ISMLB Type Na 3>ÃBAX65 BCW34V BCW35/, BCY30A\ i BCY31A-/ 1 BCY32A BCY33A BCY34A BCY39A"' BCY40A.lv Kl BCY58 BCY59 BCY78 BCY79 ) 0 BD106A\ BD106B ! BD107A â'¢ BD107B BD121_J BS/CECC â  BS-O BS-0 BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O,CV-O ìf/ /Mt^ BD124-à BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A fBDX65B BDX65C rjO rJ CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O
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k 117 k117 T0532 12NPN BCW35 BCY31A

BDW36

Abstract: BuW83 BDX62A HR PNP T03 80 8 lkmin 3/3 7M 90 BDX62B HR PNP T03 100 8 lkmin 3/3 7M 90 bdx62c HR PNP T03 120 8
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BDS29C BUV92 BDV95 BDV96 BDW21 BDW30 BDW36 BuW83 BUW83A BDW34 BDW32 1331B7 D0D044 S0T93M S0T93

WF VQE 13

Abstract: BDX63B N AMER PHILIPS/DISCRETE 5SE D â  ^53131 DOinS? b â  BDX63; 63A BDX63B; 63C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BDX62A, BDX62B and BDX62C. QUICK REFERENCE DATA BDX63 63A 63 B 63 C Collector-base voltage (open emitter) vCBO max. 80 100 120 140 V Collector-emitter voltage (open base) VCEO max. 60 80 100 120
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WF VQE 13 wf vqe 14 e WF VQE 11 E WF vqe 13 D Wf vqe 14 WF VQE 12 7Z697001 T-33-29 BDX63R- 7Z82177 7Z77086 S313L

BDY11

Abstract: BDX65C SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC BDX67A BDX67A CECC BDX67B BDX67B CECC BDX67C BDX83 BDX83A BDX83B BDX83C BDX84 BDX84A BDX84B BDX84C BDX85 BDX85A BDX85B BDX85C BDX86 BDX86A BDX86B BDX86C BDX87 BDX87A BDX87B BDX87C BDX88 BDX88A BDX88B BDX88C BDX91 BDX91 CECC BDX92 BDX92 CECC BDX93
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BDY11 BDY23 BDX94 BDX95 BDX96 BDY10 BDY12

BUT16

Abstract: MJ12005 100 BDX63B BDX62B 1k min 3 90 120 MJ4247 MJ4237 40 min 3 0.4 typ 0.18 typ 5 20 '90 250 2N6306
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BU800 MJ12004 BU500 BU208A 2N2790 MJ10006 MJ-4247 mj6503 motorola MJ-10011 MJ8500 BU204 BU205 2N4901 2N4902 2N4903

2SB1100K

Abstract: 2SB638H BD702 MJE6042 BDX62B PMD13K100 PMD13K100 2SB1147 2SB1108 2SB791K BDX54D BDX54D TIP647 2SB711 2SB712
Interconnect Devices
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2SB1099L 2SB1100K 2SB638H 2SB1100M 2SB1099 2N6053 PMD13K60 MJ920 2SB872A 2SB939A 2SB951A

B0845

Abstract: B0847 BDX62A -80 -80 BDX63B 120 100 BDX62B -100 -100 117W (Tmb
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BSS51 BSS52 BDX42 BDX45 BDX43 BDX46 B0845 B0847 B0682 B0848 B0646 BSS60 BSS61 BSS62

BU 450 bdx

Abstract: bdx 330 BDX62B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 8A 7.92 (0.312) 12.70 (0.50) All Semelab
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BDV67 BDV66 BDV65 BDV64 BUV74 BUV54 BU 450 bdx bdx 330 BUX 837 BUX37 ESM855 T0-220

pnp 400v 10a

Abstract: box53a BDX62B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can
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pnp 400v 10a box53a 800V PNP bdv 648 DARLINGTON ESM 30 vceo 800V PNP

TRANSISTOR BDX

Abstract: transistor BDX 62 A SENELAB LTD 37E J> m 0133107 OOOmOTfl : MAiMUFACTURIIMG ISMLB Type Na 3>ÃBAX65 BCW34V BCW35/, BCY30A\ i BCY31A-/ 1 BCY32A BCY33A BCY34A BCY39A"' BCY40A.lv Kl BCY58 BCY59 BCY78 BCY79 ) 0 BD106A\ BD106B ! BD107A â'¢ BD107B BD121_J BS/CECC â  BS-O BS-0 BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O,CV-O ìf/ /Mt^ BD124-à BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A fBDX65B BDX65C rjO rJ CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O
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transistor BDX 62 A transistor BU 184 darlington NPN 1000V 8a transistor transistor BU 109 transistor BU 104 h21e BU 208 130CIV 109DP 104DP CB-244 CB-19 CB-159
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