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Part : BDX33BG Supplier : ON Semiconductor Manufacturer : Avnet Stock : 1,000 Best Price : €0.3029 Price Each : €0.4719
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Part : BDX33B Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 699 Best Price : £0.6740 Price Each : £1.39
Part : BDX33BG Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 81 Best Price : £0.2940 Price Each : £0.6540
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BDX33B/D Datasheet

Part Manufacturer Description PDF Type
BDX33B-D On Semiconductor Darlington Complementary Silicon Power Transistors Original
BDX33BDW On Semiconductor BDX33 - TRANSISTOR 10 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power Original

BDX33B/D

Catalog Datasheet MFG & Type PDF Document Tags

R/TRANSISTOR box 34c

Abstract: BDX33B MOTOROLA Order this document by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B , Device Data *BDX33B/D* BDX33B/D Motorola , BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C · Low Collector­Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C · Monolithic Construction with Build­In , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc
Motorola
Original
R/TRANSISTOR box 34c BDX33B/D 220AB

box 34b

Abstract: Box 34C MOTOROLA Order this document by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B , Device Data *BDX33B/D* BDX33B/D Motorola , BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C · Low Collector­Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C · Monolithic Construction with Build­In , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc
Motorola
Original
box 34b Box 34C BDX33C MOTOROLA

BDX34C

Abstract: 10 amp pnp darlington power transistors overall value. Publication Order Number: BDX33B/D 2 http://onsemi.com Î , RESISTANCE (NORMALIZED) BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) 1.0 0.7 0.5 D = 0.5 0.3 , Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BDX33B, BDX33C* (NPN) BDX34B , Representative. BDX33B/D ON Semiconductor , BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington
ON Semiconductor
Original
10 amp pnp darlington power transistors BDX33CG marking 33c diode BDX34CG BDX334B BDX334C

BDX33C

Abstract: : BDX33B/D 2 http://onsemi.com ÃÃÃ Ã Ã Ã Ã , ) BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk , ://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BDX33B/D , BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors , 100 mAdc â'¢ â'¢ â'¢ VCEO(sus) = 80 Vdc (min) â' BDX33B, BDX334B = 100 Vdc (min) â' BDX33C
ON Semiconductor
Original

33c marking

Abstract: BDX334 , 2011 October, 2011 - Rev. 13 1 Publication Order Number: BDX33B/D BDX33B, BDX33C (NPN , Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BDX33B, BDX33C , , please contact your local Sales Representative http://onsemi.com 6 BDX33B/D ON Semiconductor , BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These , mAdc · · · VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C Low
ON Semiconductor
Original
33c marking BDX334

Box 34C

Abstract: box 34b Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C PD, POWER DISSIPATION (WATTS) 80 , THERMAL RESISTANCE (NORMALIZED) BDX33B BDX33C BDX34B BDX34C 1.0 0.7 0.5 D = 0.5 0.3 0.2 , USA/Canada http://onsemi.com 8 BDX33B/D ON Semiconductor , ON Semiconductor ) NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C , Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low
ON Semiconductor
Original

BDX33CG

Abstract: BDX33BG , 2007 November, 2007 - Rev. 12 1 Publication Order Number: BDX33B/D 2 http://onsemi.com , Representative BDX33B/D ON Semiconductor , BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , ·Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - , BDX33B, 33C/34B, 34C ·Monolithic Construction with Build-In Base-Emitter Shunt Resistors ·Pb-Free
ON Semiconductor
Original

Box 34C

Abstract: box 34b March, 2001 ­ Rev. 9 1 Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C PD , ) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDX33B BDX33C BDX34B BDX34C 1.0 0.7 0.5 D = , additional information, please contact your local Sales Representative. http://onsemi.com 8 BDX33B/D , ON Semiconductort NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C , Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low
ON Semiconductor
Original

BD PNP

Abstract: 34B100 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Com plem , Bipolar Power Transistor Device Data 3 B D X 33B B D X 3 3C B D X 34B B D X 34C NPN BDX33B, 33C , 100 mAdc V cE O isus^ = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low C ollector-Em itter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at Iq = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic Construction with B uild-In B ase-E m itter Shunt resistors T O -220A B Compact Package BDX33B BDX33C
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OCR Scan
BD PNP 34B100 3c transistor
Abstract: Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C 80 PD, POWER DISSIPATION (WATTS) 60 , general purpose and low speed switching applications. NPN BDX33B BDX33C* PNP · High DC Current , (sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic Construction with , MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB BDX33B BDX34B 80 80 BDX33C BDX34C 100 100 Unit Vdc Vdc ON Semiconductor
Original

BDX34 equivalent

Abstract: bdx33c NPN BDX33 ­ BDX33A ­ BDX33B ­ BDX33C PNP BDX34 ­ BDX34A ­ BDX34B ­ BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power , BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C Unit 45 60 V 80 100 45 60 V 80 100 1/6 NPN BDX33 ­ BDX33A ­ BDX33B ­ BDX33C , Temperature COMSET SEMICONDUCTORS @ TC = 25° Value BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A
Comset Semiconductors
Original
BDX34 equivalent

BDX33C

Abstract: BDX34C NPN BDX33 ­ BDX33A ­ BDX33B ­ BDX33C PNP BDX34 ­ BDX34A ­ BDX34B ­ BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power , BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C Unit 45 60 V 80 100 45 60 V 80 100 1/6 NPN BDX33 ­ BDX33A ­ BDX33B ­ BDX33C , Temperature COMSET SEMICONDUCTORS @ TC = 25° Value BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A
Comset Semiconductors
Original
bdx33c datasheet SILICON COMPLEMENTARY transistors darlington Comset BDX34B W
Abstract: V : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V 45 V : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V V cbO C ollecto r E m itter V oltage : BDX33 , A Base C urrent Ib 0.25 A C ollecto r D issipation (Tc=25°C) 70 W Junction , Sym bol Min Typ Max Unit V : BDX33A 60 V : BDX33B 80 V : BDX33C , : BDX33C 60 V 80 Rbe = 100 Q. : BDX33B V 100 V cev(SUS) : BDX33A V 45 V -
OCR Scan
BDX33/A/B/C X34/34A/34B/34C BDX33/34 BDX33B/33C BDX33/33A

BDX33C

Abstract: BDX33B BDX33B BDX33C BDX34B BDX34C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power , R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Uni t NPN BDX33B BDX33C , . October 1998 1/4 BDX33B BDX33C BDX34B BDX34C THERMAL DATA R t hj-ca se Thermal Resistance , for BDX33B/34B for BDX33C/34C T case = 100 oC for BDX33B/34B for BDX33C/34C V CB = 80 V V CB =
STMicroelectronics
Original
P011C

DARLINGTON 30A 100V npn

Abstract: BDX33 (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C · Monolithic construction with Built-in Base-Emitter shunt resistor. Dimensions 9.78 10.42 5.01 6.52 D 13.06 14.62 E 3.57 , BDX33B BDX33C 3.66 G 4. Collector(Case) 15.31 C 3. Emitter 14.68 B 2 , .0 BDX33, 34 Darlington Transistors MAXIMUM RATINGS Characteristic Symbol BDX33B BDX33C , ) Characteristic Symbol Minimum Maximum Unit Collector-Emitter Sustaining Voltage (1) BDX33B
Multicomp
Original
DARLINGTON 30A 100V npn resistor farnell

BDX33c equivalent

Abstract: P6019 BDX33, BDX33A, BDX33B, BDX33C, BDX33D HARRIS SEMICOND SECTOR SbE D File Number 693 10 , ) Gain of 750 at 3 A (BDX33B, BDX33C, BDX33D) (FLANGE) 4 3 0 2 8 7 1 O D M O b l l S34 « H A S 7 ^ 3 , amplifiers O 9 2 C S -3 9 9 6 9 -C c JEDEC TO-22ÛAB The BDX33, BDX33A. BDX33B, BDX33C. and , circuits. The BDX33, BDX33A, BDX33B, and BDX33C are comple mentary to the BDX34, BDX34B, and BDX34C , . 1 - Schematic diagram fo r a ll types. M A XIM U M RATINGS, Absolute-Maximum Values: B D X 33 V
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OCR Scan
P6019 BDX33c equivalent BDX33D equivalent X33B 69-6R 92CS-20697R2 92CS-20700RI I992S 98C3-20701R1 92CS-2CS94

BDX33D

Abstract: TIS130 BDX33B BDX33C BDX33D Collector-Emitter Voltage (IB=0) BDX33 BDX33A BDX33B BDX33C BDX33D , D R G N ° Parameter Collector-Emitter Breakdown Voltage (IC=100mA, IB=0,see note 3) BDX33 BDX33A BDX33B BDX33C BDX33D Q T (OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH , Linearly to 150 2. Derate Linearly to 150 C B F A B C D F G H J K L Q R S T U , (VCE=30V, IB=0) BDX33 0.5 (VCE=30V, IB=0) BDX33A 0.5 ICEO (VCE=40V, IB=0) BDX33B 0.5 (VCE
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Original
TIS130 VCe-30V BDX34D TCS130AF TCS130AH TIS130AB TCS130AJ

BDX33C

Abstract: BDX33B BDX33B/33C BDX34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors , Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Unit NPN BDX33B BDX33C PNP , o C For PNP types voltage and current values are negative. May 1997 1/4 BDX33B/33C , Current (I C = 0) Test Conditions for BDX33B/34B for BDX33C/34C T case = 100 o C for BDX33B/34B
STMicroelectronics
Original
BDX33B/33C/34B/34C BDX33B/34B

BDX33C

Abstract: bdx33a BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL 60 BDX33A BDX33B V CBO 80 BDX33C BDX33D 120 45 60 BDX33A BDX33B V CEO 80 V 100 BDX33C , change without notice. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS , 80 BDX33C 100 120 V VCE = 30 V 0.5 IB = 0 BDX33A 0.5 IB = 0 BDX33B
Bourns
Original

BDX34B

Abstract: BDX34C BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low Coiiector-Emitter Saturation Voltage VcE(sat) = 2.5 Vdc (max.) at lc = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic Construction with Build-In Base-Emitter Shunt resistors TO-220AB Compact Package BDX33B 00X330* PNP NPN BDX34B BDX34C* 'Motorola Preferred D , DX33C BDX34B BDX34C NPN BDX33B, 33C PNP BDX34B, 34C hpg, D C CURRENT GAIN Figure S. DC Current , above 25° C Operating and Storage Junction Temperature Range Symbol VCEO VCB V eb BDX33B BDX34B 80 80
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OCR Scan
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