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Part Manufacturer Description Datasheet BUY
1292540000 Weidmüller Interface GmbH & Co. KG BDX 2 BRASS visit Digikey Buy

BDX 8A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: )KS BDX86/86A/86B/86C S G S-THÃ"MS0N 30E » P O W ER DARLINGTONS DESC RIPTIO N The BDX 85, BDX 85A, BDX 85B and BDX 85C are silicon epitaxial-base NPN power transistors in monolithic , linear and switching applications. The complementary PNP types are the BDX 86, BDX 86A, BDX 86B and BDX , =8A Vce = 3 V V ce = 3 V V ce = 4 V Parallel-diode Forward Voltage Small Signal Current Gain 3A 8A l0 = 3 A f = 1 MHz 2.8 1000 750 18000 200 2.5 VCE = 3 V â'¢ Pulsed -
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BDX85 BDX85A BDX85B BDX85C BDX86 BDX86A

TRANSISTOR BDX

Abstract: transistor BDX 62 A 900V 130CIV 1500V 1700V Case 10 A BU 109 BU 109 D TO-3 BU 109 P BU 109DP TO-220 8A BU , darlingtons usage général BDX63 BDX 62 60 8 90 1000 3 2 3 0,012 7* BDX 63 A BDX 62 A 80 8 M 1000 3 2 3 0,012 7* BDX63 B BDX 62 B 100 8 90 1000 3 2 3 0,012 7* TO-3 BDX 63 C BDX 62 C 120 8 90 1000 3 2 3 0,012 7* CB-19 BDX 65 BDX 64 60 12 117 1000 5 2 5 0,02 7* BDX 65 A BDX 64 A 80 12 117 1000 5 2 5 0,02 7* BDX65 B BDX 64 B 100 12 117 1000 5 2 5 0,02 7* \ BDX 65 C BDX 64 C
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BUX37 BUV54 TRANSISTOR BDX transistor BDX 62 A transistor BU 184 darlington NPN 1000V 8a transistor bdx 330 BU800 104DP CB-244 CB-159 BUV74

bow 94c

Abstract: box 53c -220 BDX 53 NPN 45 45 8 750 2 3 60 TO-220 BDX 54 PNP 45 45 8 750 2 3 60 TO-220 BDX 53A NPN 60 60 8 750 2 3 60 TO-220 BDX 54A PNP 60 60 8 750 2 3 60 TO-220 BDX 53B NPN 80 80 8 750 2 3 60 TO-220 BDX 54B PNP 80 80 8 750 2 3 60 TO-220 BDX 53C NPN 100 100 8 750 2 3 60 TO-220 BDX 54C PNP 100 100 8 750 2 3 60 TO-220 * Coming soon *@IC=8A
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BDW23 BDW94A BDW93B BDW94B BDW93C bow 94c box 53c BOX 53C IC CSI 24C bdx 679 BD NPN transistors

transistor BU 184

Abstract: pnp transistor 800v 900V 130CIV 1500V 1700V Case 10 A BU 109 BU 109 D TO-3 BU 109 P BU 109DP TO-220 8A BU , general purpose darlingtons darlingtons usage général BDX53 BDX 54 45 8 60 750* 3 2 3 0,012 BDX33 BDX 34 45 10 70 750* 4 2,5 4 0,008 BDX53 A BDX 54 A 60 8 60 750* 3 2 3 0,012 BDX33 A BDX 34 A 60 10 70 750* 4 2,5 4 0,008 BDX 53 B BDX 54 B 80 8 60 750* 3 2 3 0,012 BDX 33 B BDX 34 B 80 10 70 750* 3 2,5 3 0,006 ùjf BDX 53 C BDX 54 C 100 8 60 750* 3 2 â'¢ â  3 0,012 BDX 33
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BUV37 pnp transistor 800v transistor BDX 80 darlington NPN 600V 8a transistor NPN Transistor 600V TO-220 NPN Transistor VCEO 1000V TRANSISTOR BDX 285 CB-117 BDV67 BDV65 CB-285

TRANSISTOR BDX

Abstract: BDX63A =25°C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 5 5 5 5 V IC , 2500 1000 IC = 8A, VCE = 3V 2600 VBE Base - emitter voltage (note 1) IC = 3A, VCE = 3V
Semelab
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BDX63A BDX63B BDX63C BDX62 BDX62A BDX62B Transistor 63B transistor BDX 65 darlington complementary power amplifier
Abstract: =25°C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 V 5 5 5 5 V , = 0, VCE = ½V CEOmax IEBO Max. mA 2500 1000 IC = 8A, VCE = 3V 2600 VBE Semelab
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BDX62C

ksd 250v 10a

Abstract: ksd 180 5A K S H 20 0 K S H 21 0 KSA1242 "K S A 12 44 ·K S C 30 74 6A K S H 41 C K S H 42 C 8A , 24B BD 2 43B BD 2 44B K SD 569 KSB 708 TIP101 TIP 106 B DX 53B BDX 54B B D 537 B D 5 38 TIP 141T TIP 146T BDX 33B BDX 34 B D 44H D 45H KSC 2 33 5 7 8 BDX 53 BOX 54 BD 533 B D 534 T IP 10 0 T fP 10 5 BDX 53A B DX 5 4A B D 5 35 B D 536 KSE 3055T KSE 2 9 5 5T T IP 1 4 0 T T IP 14 5 T BDX 33A , F KSC 5321F 7A K SB 1022 K S D 1417 KSB1D97 K S D 15 88 K S C 23 35 F 8A K S C 53 37
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ksd 250v 10a ksd 180 ksd 202 13003 bd ksd 250v ksd 75 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167 KSC838/KSC167

BDX32

Abstract: bdx 540 BDX32 NPN SILICON POWER TRANSISTOR DESIGNED FOR HIGH VOLTAGE C.R.T. SCANNING ' VCEX fating 1700 V > Current Rating â'" 4 Amps Continuous â'" 5 Amps Peak > Fast Switching â'" tf at 3.5 Amps 0.7 Microsecond Typical mechanical specification » 5 -» 40 max â'"30,4â'"«" 17,25 " \ 5 p s I , * 10 15 1,0 BUY 70 B 75 800* 10 15 1,0 BUY 70 C 75 500* 10 15 1,0 BUY 71 40 2200* 2 BDX 31 40 2200* 4 BDX 32 40 1700* 4 2N 3439 Siehe Datenblatt Seite 2-301; See Data Sheet Page
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bdx 540 BUY71 2N3440 2N 3585 TRANSISTOR BDX 538 crt 1700

ksd 302 250v, 10a

Abstract: irf 5630 > always quoted as guaranteed values. '" The transition frequency is always quoted in MHz. Illustration
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ksd 302 250v, 10a irf 5630 transistor 2SB 367 bf199 IRF 3055 transistor ESM 2878 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489

BDX 34C pnp

Abstract: BDX33 8A D.C. current gain IC = 4 A; Vce = 3 V (33, A, 34, A) IC = 3 A; VCE = 3 V (33B, C, 34B, C) Small , ; f = 1 MHz Vcb = 10V; IE = 0 (BDX 33 series) (BDX 34 series) VEBO max. 5.0 V Ic max. 10 A ICM
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BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX 34C pnp bdx 33c

BU326

Abstract: BU326-BU326A < 1 0 % . BU326 800 V 800 V 375V 10V 6A 8A 2A 3A 60 W - 65°C to 150 °C BU 326A 900 V 900V 400 V · , ^ 3-33 BD, BDW, BDX, BU, BUX, B U Y Devices TDCSTS" INSTR -COPTO} bä »£^011,1721 , vi za oo > M CZ N) n lu O' O' 0J 0J O' BD, BDW, BDX, BU, BUX, BUY Devices o - I
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BU326A BU326-BU326A st bux 331Z

Box 34C

Abstract: BDX 34C pnp . 2.5 V Diode forward voltage IF = 8A VF max. 4.0 V D.C. current gain IC = 4 A; VCE = 3 V , capacitance; f = 1 MHz PF Vcb = 10V; IE = o (BDX 33 series) Cob max. 200 (BDX 34 series) Cob max. 300
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BDX34C Box 34C box 34b BDX 34 BDX33/A

D895

Abstract: BD 895 linearly to 150°C free-air tem perature at the rate o f 16 m W /°C . 5V 8A 0 .3 A 70 W 2W - 65 °C to , D ALLAS. TEXAS 75265 i _ :_._ BD, BDW, BDX, BU, BUX, B U Y , ALLAS. TEXAS 75265 3-5 BD, BDW, BDX, BU, BUX, B U Y Devices TEXAS INSTR -COPTO} b2 , [T o u vl UJ cr BD, BDW, BDX, BU, BUX, BUY Devices CF 1=1 UJ
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D895 BD 895 bdw 34 a BD895 BD895A BD897 BD897A BD899 BD899A
Abstract: >D ffl « X D CÛ « D GÛ s X Û GÛ 6A 8A 2A 3A 60 W -6 5 °C to 1 5 0 °C Ì o CO v O OQ , t s POST O FFICE BOX 225012 · DALLAS. TE X A S 75265 3 69 369 BD, BDW, BDX, BU, BUX, B U Y , ARACTERISTICS TURN-OFF TIMES vs COLLECTOR TURN-ON TIMES vs COLLECTOR BD, BDW, BDX, BU, BUX, B U Y Devices , -Collector-Emltter Voltage - V F IG U R E 10 BD, BDW. BDX, BU, BUX, B U Y Devices 3-72 THERM AL INFORMATION -
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BUX82 BUX83

smps with uc3842 and tl431

Abstract: lm317 SO-8 8A, 35ns Diode 2x10A, 35ns, Diode FRED Diodes Power Schottky Diode SG3524 SG3525A SG3527A , CARRIAGE - RIBBON CMOS Timers Darlingtons in TO-220 Type Transistor Array BDX53 & BDX 54
STMicroelectronics
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LM338K LM350K L4977A IMSC012 ST90R30 ST90R50 smps with uc3842 and tl431 lm317 SO-8 op-amp lm723 sg3525a smps LM317 LM317MDT LM323 LM337

X53A

Abstract: BDX63A storage tem perature range NOTES: I i ! E BD X53A 60 V 60 V 5V 8A BDX53B BOV 80 V BD X53C 100V , OFFICE BOX 225012 · D ALLAS, TEXAS 76265 3-21 BD, BDW, BDX, BU, BUX, B U Y Devices TE XA S IN S , > 00 1 ro G> O O z je Xn 2 (0 ru IT UJ tr ÎO o N9 Cl BD, BDW, BDX, BU, BUX. BUY
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X53A T-33-29 BDX53A BDX53C
Abstract: 12 @9 9© © 08 ©7 7© 6 © 1 ©6 ©5 5© 4© ©4 ©3 3© 20 ©2 © 1© 1 0  , TRAY INSIDE CARTDN BDX, (INCLUDE THE UPPERMDST AND LDWEREST ORIGINATED BY ANTDN/BILL DRAWN BY XIU DCO02(2)032305 DATE 0 4 -2 5 -0 6 DATE 0 4 -2 5 -0 6 TRAY GDDDS) PER CARTDN BDX -
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100MH 0843-2B1T-70 08432B1T70E DC002
Abstract: © © i© 10© © O10 ©9 9© © 08 ©7 7© 6© V I © 1 ©6 ©5 5 , ) PACKING QUANTITY: 40 PCS FINISHED GDDDS PER TRAY 6 TRAYS (240 PCS FINISHED GDDDS) PER CARTDN BDX. NDTE: CARDBDARD ARE PLACED BETWEEN LAYERS DF PACKING TRAY INSIDE CARTDN BDX. (INCLUDE THE UPPERMDST AND LDWEREST -
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125MH 100DHMS 20LDG
Abstract: 13 12 11 i 11 12 13 V © © © © 10 © ©9 © 6© 9© ©7 7© ©5 5© O10 , PER TRAY 6 TRAYS (240 PCS FINISHED GDDDS) PER CARTDN BDX, NDTE: CARDBDARD ARE PLACED BETWEEN L A Y E R S DF PACKING TRAY INSIDE CARTDN BDX, (INCLUDE THE UPPERMDST AND LDWEREST TRAY) ORIGINATED BY -
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PIN1-10 08432B1TY4-F 2002/95/EC

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 2N6474   45 V nFE = 15-60 ®8A fT = 0.8 MHz min. Ic = 16 A max. 2N4347 VcEVla»! â'¢ '40 V hFE M 15-60 02 A fT , » ISO W lc â  30 A 2N3773 VCEVlsus) = 160 V hFE = 15-60 ®8A fT = 0.7 MHz tvp. PT = 150 W lc" 16 A , 70 V hFE = 15-60 @ 10 A fT = 0.8 MHz min PT = 150W 2N6259 VCER(susl = 160 V hFE = 15«) ®8A fT = 0.6 , VCERISUS) - 45 V hpE â  15-60 @8A tT = 0 9 MHz min. Ic = 16 A max. CT File No. 562 CT File No. 562 CT , (2N4036) - - - 16 45 25W Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - - - 40360 (2N2102) - True
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ITO-220 2N1482 2N5786 2N3054 2N5298 2N344 300W TRANSISTOR AUDIO AMPLIFIER 2N6474 ITO-391- ITO-2201 ITO-31
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