NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 1700V Case 10 A BU 109 BU 109 D TO-3 BU 109 P BU 109DP 109DP TO-220 8A BU 189 BU 184 , darlingtons darlingtons usage général BDX53 BDX53 BDX 54 45 8 60 750* 3 2 3 0,012 BDX33 BDX33 BDX 34 45 10 70 750* 4 2,5 4 0,008 BDX53 BDX53 A BDX 54 A 60 8 60 750* 3 2 3 0,012 BDX33 BDX33 A BDX 34 A 60 10 70 750* 4 2,5 4 0,008 BDX 53 B BDX 54 B 80 8 60 750* 3 2 3 0,012 BDX 33 B BDX 34 B 80 10 70 750* 3 2,5 3 0,006 ùjf BDX 53 C BDX 54 C 100 8 60 750* 3 2 • â- 3 0,012 BDX 33 C BDX 34 C 100 10 70 750 ... | OCR Scan |
2 pages, |
BDX33 bdx 330 BDV67 BDV66 BDV65 800V PNP pnp transistor 800v NPN Transistor VCEO 1000V transistor BU 189 pnp 500v transistor BU 109 pnp transistor 1000v TRANSISTOR BDX NPN Transistor 600V TO-220 datasheet abstract |
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| Abstract: TO-220 BDW93C BDW93C* NPN 100 100 12 1000 4* 4 90 TO-220 BDW 94C* PNP 100 100 12 1000 4* 4 90 TO-220 BDX 53 NPN 45 45 8 750 2 3 60 TO-220 BDX 54 PNP 45 45 8 750 2 3 60 TO-220 BDX 53A NPN 60 60 8 750 2 3 60 TO-220 BDX 54A PNP 60 60 8 750 2 3 60 TO-220 BDX 53B NPN 80 80 8 750 2 3 60 TO-220 BDX 54B PNP 80 80 8 750 2 3 60 TO-220 BDX 53C NPN 100 100 8 750 2 3 60 TO-220 BDX 54C PNP 100 100 8 750 2 3 60 TO-220 * Coming soon *@IC=8A ... | OCR Scan |
1 pages, |
TO-220 BD PNP BDW23 BDW93B BDW93C BDW94A BDW94B bdx 94c bd* to-220 CSI 24C BD NPN transistors bdx 679 box 53c BOX 53C IC bow 94c datasheet abstract |
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| Abstract: 1700V Case 10 A BU 109 BU 109 D TO-3 BU 109 P BU 109DP 109DP TO-220 8A BU 189 BU 184 , 3,2 0,8 # TOP-3 CB-244 CB-244 general purpose darlingtons darlingtons usage général BDX63 BDX63 BDX 62 60 8 90 1000 3 2 3 0,012 7* BDX 63 A BDX 62 A 80 8 M 1000 3 2 3 0,012 7* BDX63 BDX63 B BDX 62 B 100 8 90 1000 3 2 3 0,012 7* TO-3 BDX 63 C BDX 62 C 120 8 90 1000 3 2 3 0,012 7* CB-19 CB-19 BDX 65 BDX 64 60 12 117 1000 5 2 5 0,02 7* BDX 65 A BDX 64 A 80 12 117 1000 5 2 5 0,02 7* BDX65 BDX65 B ... | OCR Scan |
2 pages, |
transistor ESM 30 BDX63 BDX65 BDX66 BDX67 BU 326 GA darlington NPN 600V 8a transistor BUV54 BUX37 darlington NPN 1000V 8a transistor h21e BU 208 npn 1000V 100a transistor BU 109 BU800 datasheet abstract |
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| Abstract: unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 5 5 5 5 V IC , 2500 1000 IC = 8A, VCE = 3V 2600 VBE Base - emitter voltage (note 1) IC = 3A, VCE = 3V ... | Original |
2 pages, |
Transistor 63B BDX63C BDX63B BDX63 BDX62C BDX62B BDX62A BDX62 BDX63A BDX63 abstract |
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| Abstract: 8A D.C. current gain IC = 4 A; Vce = 3 V (33, A, 34, A) IC = 3 A; VCE = 3 V (33B, C, 34B, C) Small , ; f = 1 MHz Vcb = 10V; IE = 0 (BDX 33 series) (BDX 34 series) VEBO max. 5.0 V Ic max. 10 A ICM ... | OCR Scan |
2 pages, |
BDX34C BDX34B BDX34A BDX34 BDX33C BDX33B BDX33A BDX33 BDX 34C pnp BDX33 abstract |
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| Abstract: IC = 3 A; VCE = 3 V (33B, C, 34B, C) VBE(on)* max. 2.5 V Diode forward voltage IF = 8A VF , ; IE = o (BDX 33 series) Cob max. 200 (BDX 34 series) Cob max. 300 PF * Pulse test: Pulse width ... | OCR Scan |
2 pages, |
BDX34 BDX33 BDX34C BDX34B BDX34A BDX33A BDX33C BDX33B BDX 34C pnp box 34b Box 34C BDX33 abstract |
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| Abstract: 8A, 35ns Diode 2x10A, 35ns, Diode FRED Diodes Power Schottky Diode SG3524 SG3524 SG3525A SG3525A SG3527A SG3527A , CARRIAGE - RIBBON CMOS Timers Darlingtons in TO-220 Type Transistor Array BDX53 BDX53 & BDX 54 ... | Original |
2 pages, |
IMSC012 IMSC004 Current driver chip ULN2003A LM338K LM350K ULN2068 ULN2003A motor driver TDB7910N ST90R30 ST9030 3A stepper drive pbl3717a op-amp lm723 OF IRF530 LM317 LM317MDT LM317 abstract |
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| Abstract: 1 MHz tvp. PT - 117 W 2N6102 2N6102 2N6103 2N6103 VCERlsus) â- 45 V nFE = 15-60 ®8A fT = 0.8 MHz min. Ic = 16 A , min. PT» ISO W lc â- 30 A 2N3773 2N3773 VCEVlsus) = 160 V hFE = 15-60 ®8A fT = 0.7 MHz tvp. PT = 150 W lc" 16 A , @ 10 A fT = 0.8 MHz min PT = 150W 2N6259 2N6259 VCER(susl = 160 V hFE = 15«) ®8A fT = 0.6 MHz min. PT â- 250 , VCERISUS) - 45 V hpE â- 15-60 @8A tT = 0 9 MHz min. Ic = 16 A max. CT File No. 562 CT File No. 562 CT File , BDX 33 2N6386 2N6386 BDX 34 TA8201 TA8201 - - - 40360 (2N2102 2N2102) - True Comp. 40875 (2N6269 2N6269) 40632 (2N5492 2N5492) 40876 ... | OCR Scan |
4 pages, |
Transistor 40347 2N3054 2N344 2N5298 2N5786 2n6103 2N6478 300W TRANSISTOR AUDIO AMPLIFIER 40636 BD277 ITO-220 Transistor 2n6099 2N1482 BD278 ITO-391- ITO-220 ITO-391- abstract |
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| Abstract: BYS10-45 BYS10-45 ES1A ES1B ES1C ES1D P4SMA6.8A P4SMA7.5A P4SMA8.2A P4SMA9.1A P4SMA10A P4SMA10A P4SMA11A P4SMA11A P4SMA12A P4SMA12A , TPSMA36 TPSMA36 TPSMA36A TPSMA36A TPSMA39 TPSMA39 TPSMA39A TPSMA39A TPSMA43 TPSMA43 TPSMA43A TPSMA43A TPSMA6.8 TPSMA6.8A TPSMA7.5 TPSMA7.5A , ES2D ES2F ES2G MURS120 MURS120 MURS140 MURS140 MURS160 MURS160 P6SMB6.8A P6SMB7.5A P6SMB8.2A P6SMB9.1A P6SMB10A P6SMB10A , TPSMB39A TPSMB39A TPSMB43 TPSMB43 TPSMB43A TPSMB43A TPSMB6.8 TPSMB6.8A TPSMB7.5 TPSMB7.5A TPSMB8.2 TPSMB8.2A TPSMB9.1 , GFG7 BFK7 BFM7 GGG7 GDE7 BDK7 GHT GHS BDW GGY GGZ BDX GDY GHD GHE GDZ BED GHF GHG ... | Original |
11 pages, |
BFE 75A GGG 62A GENERAL SEMICONDUCTOR MARKING RJ SMA marking code LG VISHAY MARKING SJ 6V8A UM marking code DO214AA gfx 56a 51C MARKING code 6V8C VISHAY MARKING RJ S6 68A GFK 13A datasheet abstract |
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| Abstract: 1 MHz tvp. PT - 117 W 2N6102 2N6102 2N6103 2N6103 VCERlsus) â- 45 V nFE = 15-60 ®8A fT = 0.8 MHz min. Ic = 16 A , min. PT» ISO W lc â- 30 A 2N3773 2N3773 VCEVlsus) = 160 V hFE = 15-60 ®8A fT = 0.7 MHz tvp. PT = 150 W lc" 16 A , @ 10 A fT = 0.8 MHz min PT = 150W 2N6259 2N6259 VCER(susl = 160 V hFE = 15«) ®8A fT = 0.6 MHz min. PT â- 250 , VCERISUS) - 45 V hpE â- 15-60 @8A tT = 0 9 MHz min. Ic = 16 A max. CT File No. 562 CT File No. 562 CT File , BDX 33 2N6386 2N6386 BDX 34 TA8201 TA8201 - - - 40360 (2N2102 2N2102) - True Comp. 40875 (2N6269 2N6269) 40632 (2N5492 2N5492) 40876 ... | OCR Scan |
5 pages, |
transistor BDY29 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 npn 40872 npn darlington 400v 1.*a npn darlington 400v 15a 2N1482 2N6474 300W TRANSISTOR AUDIO AMPLIFIER ITO-391- ITO-391- ITO-220 ITO-391- abstract |
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| -base Voltage (I C = 0) 5 V I C Collector Current 8 A I CM Collector Peak Current (repetitive) 12 A I Voltage I F = 3 A I F = 8 A 1.8 2.5 2.5 V V * Pulsed: Pulse duration = 300 m s Datasheet COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53B BDX53C BDX54B BDX54C 25/09/1997 6 Raw Text Format BDX53B / BDX53C BDX54B / BDX54C COMPLEMENTARY The BDX53B and BDX53C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4103.htm |
STMicroelectronics | 20/10/2000 | 7.75 Kb | HTM | 4103.htm |
| V EBO Emitter-base Voltage (I C = 0) 5 V I C Collector Current 8 A I CM = 3 A I F = 8 A 1.8 2.5 2.5 V V * Pulsed: Pulse duration = 300 m s Datasheet COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53B BDX53C BDX54B BDX54C Document Format Size Document Number Date Update Pages Portable Document Format 4103 25/09/1997 6 Raw Text Format BDX53B www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4103-v3.htm |
STMicroelectronics | 25/05/2000 | 7.43 Kb | HTM | 4103-v3.htm |
| = 0) 60 80 100 V V EBO Emitter-base Voltage (I C = 0) 5 V I C Collector Current 8 A I CM Collector -diode Forward Voltage I F = 3 A I F = 8 A 1.8 2.5 2.5 V V * Pulsed: Pulse duration = 300 m s, duty ST | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53B BDX53C BDX54B BDX54C and Raw Text Format BDX53A/53B/53C BDX54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n BDX53B, BDX53C, BDX54B AND BDX54C ARE ST PREFERRED SALESTYPES APPLICATIONS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4103-v1.htm |
STMicroelectronics | 02/04/1999 | 5.71 Kb | HTM | 4103-v1.htm |
| = 0) 60 80 100 V V EBO Emitter-base Voltage (I C = 0) 5 V I C Collector Current 8 A I CM Collector -diode Forward Voltage I F = 3 A I F = 8 A 1.8 2.5 2.5 V V * Pulsed: Pulse duration = 300 m s, duty ST | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53B BDX53C BDX54B BDX54C and Raw Text Format BDX53A/53B/53C BDX54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n BDX53B, BDX53C, BDX54B AND BDX54C ARE ST PREFERRED SALESTYPES APPLICATIONS www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4103-v2.htm |
STMicroelectronics | 14/06/1999 | 5.67 Kb | HTM | 4103-v2.htm |
| V 750 V V F * Parallel-Diode Forward Voltage I F = 8 A 4 V h fe Small Signal Current Gain I C = 1 A ST | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX33B BDX33C BDX34B BDX34C and Raw Text Format BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic power linear and switching applications. The complementary PNP types are the BDX34B and BDX34C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4102-v1.htm |
STMicroelectronics | 02/04/1999 | 5.27 Kb | HTM | 4102-v1.htm |
| V 750 V V F * Parallel-Diode Forward Voltage I F = 8 A 4 V h fe Small Signal Current Gain I C = 1 A ST | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX33B BDX33C BDX34B BDX34C and Raw Text Format BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic power linear and switching applications. The complementary PNP types are the BDX34B and BDX34C www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4102-v2.htm |
STMicroelectronics | 14/06/1999 | 5.23 Kb | HTM | 4102-v2.htm |
| V CE = 3 V 750 V V F * Parallel-Diode Forward Voltage I F = 8 A 4 V h fe Datasheet COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX33B BDX33C BDX34B BDX34C Document Format Size Document Number Date Update Pages Portable Document Format 4102 19/10/1998 4 Raw Text Format BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4102-v3.htm |
STMicroelectronics | 25/05/2000 | 6.89 Kb | HTM | 4102-v3.htm |
| -Diode Forward Voltage I F = 8 A 4 V h fe Small Signal Current Gain I C = 1 A V CE = 5 V f = 1MHz Datasheet COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX33B BDX33C BDX34B BDX34C 19/10/1998 4 Raw Text Format BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington applications. The complementary PNP types are BDX34B and BDX34C respectively. [ INTERNAL SCHEMATIC www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4102.htm |
STMicroelectronics | 20/10/2000 | 7.25 Kb | HTM | 4102.htm |
| ) 5 V I C Collector Current 8 A I CM Collector Peak Current (repetitive) 12 A I B Base Current 0.2 A P -diode Forward Voltage I F = 3 A I F = 8 A 1.8 2.5 2.5 V V * Pulsed: Pulse duration = 300 m s, duty ST | SILICON POWER DARLINGTON TRANSISTOR BDX53BFP SILICON POWER DARLINGTON TRANSISTOR the following formats: Portable Document Format and Raw Text Format BDX53BFP SILICON The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5314-v2.htm |
STMicroelectronics | 14/06/1999 | 4.55 Kb | HTM | 5314-v2.htm |
| (I C = 0) 5 V I C Collector Current 8 A I CM Collector Peak Current (repetitive) 12 A I B V CE = 3 V 750 V F * Parallel-diode Forward Voltage I F = 3 A I F = 8 A 1 SILICON POWER DARLINGTON TRANSISTOR BDX53BFP Document Format Size 16/04/1998 4 Raw Text Format BDX53BFP SILICON POWER The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5314.htm |
STMicroelectronics | 20/10/2000 | 6.7 Kb | HTM | 5314.htm |