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BDW94/C Datasheet

Part Manufacturer Description PDF Type
BDW94C Bourns PNP SILICON POWER DARLINGTONS Original
BDW94C Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BDW94C Power Innovations PNP SILICON POWER DARLINGTONS Original
BDW94C STMicroelectronics complementary darlington power transistor Original
BDW94C STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Original
BDW94C Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan
BDW94C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan
BDW94C Mospec POWER TRANSISTORS(12A,45-100V,80W) Scan
BDW94C Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDW94C N/A Semiconductor Master Cross Reference Guide Scan
BDW94C N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDW94C N/A Shortform Transistor Datasheet Guide Scan
BDW94C N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW94C N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW94C N/A Shortform Transistor PDF Datasheet Scan
BDW94C N/A Cross Reference Datasheet Scan
BDW94C N/A Cross Reference Datasheet Scan
BDW94C SGS-Ates Shortform Data Book 1977/78 Scan
BDW94C STMicroelectronics Shortform Data Book 1988 Scan
BDW94C Transys Electronics PNP SILICON POWER DARLINGTONS Scan
Showing first 20 results.

BDW94/C

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear , Corporation BDW94/C Rev. B 1 www.fairchildsemi.com Symbol VCEO(sus) ICBO TC = 25°C unless , = 300µs, Duty Cycle = 1.5% Pulsed 2 BDW94/C Rev. B www.fairchildsemi.com BDW94/C PNP , EMITTER VOLTAGE 50 100 150 200 250 o Tc [ C], CASE TEMPERATURE 3 BDW94/C Rev. B 80 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor Typical Performance Fairchild Semiconductor
Original
BDW94/C BDW93 BDW93C

BDW93

Abstract: BDW93C BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application · Power , -65 ~ 150 °C ©2005 Fairchild Semiconductor Corporation BDW94/C Rev. B 1 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor January 2005 Symbol VCEO(sus) ICBO TC = 25°C unless otherwise noted Parameter Collector-Emitter Sustaining Voltage : BDW94 : BDW94C , = 300µs, Duty Cycle = 1.5% Pulsed 2 BDW94/C Rev. B www.fairchildsemi.com BDW94/C PNP
Fairchild Semiconductor
Original
BDW94A BDW94B
Abstract: BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application â'¢ Power , Storage Temperature -65 ~ 150 °C ©2005 Fairchild Semiconductor Corporation BDW94/C Rev. B 1 www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor January 2005 Symbol , % Pulsed 2 BDW94/C Rev. B www.fairchildsemi.com BDW94/C PNP Epitaxial Silicon Transistor , 150 200 250 o Tc [ C], CASE TEMPERATURE 3 BDW94/C Rev. B 80 Fairchild Semiconductor
Original

BDW94B

Abstract: BDW93C PNP Junction to Case Rjc 1.56 °C/W Page 1 08/05/06 V1.0 BDW93, BDW94 Series Darlington , 08/05/06 V1.0 BDW93, BDW94 Series Darlington Transistors NPN BDW93B and C/PNP BDW94B and C , BDW93, BDW94 Series Darlington Transistors Features: Designed for general-purpose amplifier and , Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 , 0.64 W W/°C TJ, TSTG -65 to +150 °C Collector Current-Continuous Peak Base Current
Multicomp
Original
BDW93C PNP Complementary Darlington current Amplifier bdw93c applications DARLINGTON 30A 100V npn

BDW94C

Abstract: . 1 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C , BDW94C -0.1 current VCB = -45 V IE = 0 TC = 150°C BDW94 -5 IE = 0 TC = 150°C , BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE (TOP VIEW) 1 C
Bourns
Original
TCS135AE TCS135AG TCS135AI TIS130AA

BDW94

Abstract: dsa001364 BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications · Power Darlington TR · , Semiconductor International Rev. A, February 2000 BDW94/A/B/C Electrical Characteristics TC=25°C unless otherwise noted BDW94/A/B/C Typical Characteristics -10 100k VCE(sat) [V], SATURATION , TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 BDW94/A/B/C Package Demensions TO , .Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
Fairchild Semiconductor
Original
dsa001364 BDW94/A/B/C

BDW94C

Abstract: BDW93 V IE = 0 TC = 150°C BDW94 -5 IE = 0 TC = 150°C BDW94A -5 IE = 0 TC = , BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , , BDW93A, BDW93B and BDW93C TO-220 PACKAGE (TOP VIEW) q 80 W at 25°C Case Temperature q 12 A Continuous Collector Current B 1 q Minimum hFE of 750 at 3 V, 5 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C
Power Innovations
Original

BDW94C

Abstract: 300f 2 3a BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING , Characteristic Symbol Rating Unit Collector Emitter Voltage BDW94 VcBO - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C - 100 V Collector Emitter Voltage BDW94 VcEO - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C , 0.2 A Collector Dissipation (Tc=25°C) Pc 80 W Junction Temperature Tj 150 °C Storage , (Tc=25°c) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Emitter Sustaining
-
OCR Scan
300f 2 3a 300f diode transistor BDW94A

BDW93

Abstract: BDW93A current VCB = -45 V IE = 0 TC = 150°C BDW94 -5 IE = 0 TC = 150°C BDW94A -5 , BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE
Bourns
Original

BDW94

Abstract: BDW94C 0.55 M 2.48 2.98 O 3.70 3.90 BDW93,A,B,C NPN I BDW94,A,B,C PNP ELECTRICAL CHARACTERISTICS (Tc = 25°C , , Duty Cycle ^ 2.0% BDW93 Series NPN BDW94 Series PNP BDW93,A,B,C NPN I BDW94,A,B,C PNP < i-z 111 S , / / < £ g 6 a. O a: e< UJ d o o J 2 PNP BDW94,A,B,C Ic-Vbe â , 2.0 3.0 5.0 10 20 30 50 100 Vcc , COLLECTOR EMTTTER VOLTAGE (VOLTS) BDW93,A,B,C NPN I BDW94,A,B,C PNP NPN BDW93,A,B,C DC CURRENT GAIN PNP BDW94,A,B,C DC CURRENT GAIN 8 Ï 20k 10 k 5k 2k 1k 200 :VCE
-
OCR Scan

BDW93

Abstract: BDW93A UNIT BDW94 -45 V(BR)CEO Collector-emitter breakdown voltage "c = -100 mA lB = 0 (see Note 3 , -0.1 'CBO Collector cut-off current VCB VCB = -100 V = -45 V lE = 0 lE = 0 Tc = 150°C BDW94C BDW94 , I RAM SYS ELECTRONICS ^^ LIMITED BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3 V, 5 A TO-22C) PACKAGE (TOP VIEW) B C C C E C o Pin
-
OCR Scan
T0220

BDW94

Abstract: BDW94C SavantIC Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW93/A/B/C , Product Specification BDW94/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless , .2 Outline dimensions 3 BDW94/A/B/C - , PARAMETER CONDITIONS BDW94 Collector-base voltage -60 Open emitter V BDW94B -80
-
Original
BDW93/A/B/C

BDW94

Abstract: BDW94/A/B/C BDW94/A/B/C Power Linear and Switching Applications · Power Darlington TR · , Fairchild Semiconductor International Rev. B, February 2000 BDW94/A/B/C Electrical Characteristics , International Rev. B, February 2000 BDW94/A/B/C Typical Characteristics ©2000 Fairchild Semiconductor International Rev. B, February 2000 BDW94/A/B/C Package Dimensions TO-220 9.90 ±0.20 , Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO
Fairchild Semiconductor
Original

BOW94C

Abstract: BDW948 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Copyright C 1987, Power Innovations , BDW94C BDW94 B0W94A BDW94B BDW94C BDW04 BDW94A BDW94B BOW94C Tc = 150*C Tc = 15QC C Tc = 150°G Tc = 150°C BDW94 BDW94A BDW94B BDW94C MIN -45 -60 -80 -100 TYP M AX UNIT breakdown voltage !c = , , BDW93A, BDW93B and BDW93C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3 V, 5 A B C C TO-220 P A C K A G E (TOP VIEW) Pin 2 is in electrical contact with the
-
OCR Scan
BDW948 BOW94A 8DW94A B0W94B
Abstract: ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW94 Collector-base , IE = 0 TC = 150°C BDW94 -5 VCB = -60 V hFE VCE(sat) VBE(sat) VEC current , BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS G Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C G 80 W at 25°C Case Temperature G 12 A Continuous Collector Current G Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 -
Original
Abstract: 0 TC = 150°C BDW94 -5 IE = 0 TC = 150°C BDW94A -5 IE = 0 TC = 150°C , BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE (TOP VIEW) 1 C , is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case Bourns
Original

BDW94C

Abstract: BDW94 Inchange Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON Complement to type BDW93/A/B/C , temperature -65~150 TC=25 Inchange Semiconductor Product Specification BDW94/A/B/C , Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors PACKAGE OUTLINE , =25) SYMBOL PARAMETER BDW94 Collector-base voltage HAN INC Open emitter BDW94B VALUE
-
Original

BDW93

Abstract: BDW94C current VCB = -45 V IE = 0 TC = 150°C BDW94 -5 IE = 0 TC = 150°C BDW94A -5 , BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDW93, BDW93A, BDW93B and BDW93C 80 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 750 at 3V, 5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE
Bourns
Original
Abstract: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Emitter Voltage BDW94 BDW94A BDW94B BDW94C Collector Emitter Voltage BDW94 BDW94A BDW94B BDW94C Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Tc=25°C , 5 -6 0 - 80 - 100 - 12 - 15 -0.2 80 150 -65 ~ 150 Unit V V V V V V V V A A A W °C °C Pc T j T -
OCR Scan
Abstract: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , B = -40 V -60 V -80 V -80 V -45 V -60 V -80 V lB = 0 O O O C D II BDW94 BDW94A BDW94B BDW94C BDW94 BDW94A BDW94B BDW94C T c = 150°C T c = 150°C T c = 150°C T c = 150°C BDW94 BDW94A BDW94B , air therm al resistance °c/w °c/w I N F O R M A T I O N 2 BDW94, BDW94A, BDW94B, BDW94C , TEMPERATURE Tc - Case Temperature - °C Figure 4. PRODUCT I N F O R M A T I O N 4 BDW94 -
OCR Scan
T0-220
Showing first 20 results.