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BDT60 Datasheet

Part Manufacturer Description PDF Type
BDT60 Bourns PNP SILICON POWER DARLINGTONS Original
BDT60 Philips Semiconductors Silicon Darlington Power Transistor Original
BDT60 Power Innovations PNP SILICON POWER DARLINGTON Original
BDT60 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDT60 N/A Shortform Transistor PDF Datasheet Scan
BDT60 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDT60 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDT60 Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan
BDT60 Transys Electronics PNP SILICON POWER DARLINGTONS Scan
BDT60 Transys Electronics BJT, PNP, Darlington Power Transistor, IC 4A Scan
BDT601000 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT601000C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT601200 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT601200C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT60200 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT60200C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT60400 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT60400C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT60600 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDT60600C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
Showing first 20 results.

BDT60

Catalog Datasheet MFG & Type PDF Document Tags

BDT60C

Abstract: BDT60 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , µs 4.5 µs BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 - , . PRODUCT INFORMATION 3 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 , IC - Collector Current - A -10 SAS115AB -1·0 -0·1 BDT60 BDT60A BDT60B BDT60C -0.01 , . PRODUCT 4 INFORMATION 125 150 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
Power Innovations
Original
BDT61 BDT61A BDT61B BDT61C

BDT60C

Abstract: BDT60 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , 2002 Specifications are subject to change without notice. 3 BDT60, BDT60A, BDT60B, BDT60C PNP , IC - Collector Current - A -10 SAS115AB -1·0 -0·1 BDT60 BDT60A BDT60B BDT60C -0.01 , Specifications are subject to change without notice. BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER , = 0) BDT60B V CBO -80 -100 BDT60C V -120 BDT60 Collector-emitter voltage (IB
Bourns
Original

TCS-11

Abstract: BDT60 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , 2002 Specifications are subject to change without notice. 3 BDT60, BDT60A, BDT60B, BDT60C PNP , IC - Collector Current - A -10 SAS115AB -1·0 -0·1 BDT60 BDT60A BDT60B BDT60C -0.01 , = 0) BDT60B V CBO -80 -100 BDT60C V -120 BDT60 Collector-emitter voltage (IB = 0) UNIT -60 BDT60 BDT60A VALUE -60 BDT60A BDT60B VCEO -80 -100 V
Bourns
Original
TCS-11 TCS115AB TCS115AC TIS110AA
Abstract: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , noted) RATING BDT60 Collector-base voltage ( lE = 0) BDT60A BDT60B BDT60C BDT60 Collector-em itter , processing does not necessarily include testing of all parameters. BDT60, BDT60A, BDT60B, BDT60C PNP , -80 V lB = 0 CD BDT60 BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C T c = 150°C T c = 150°C T c = 150°C T c = 150°C BDT60 BDT60A BDT60B BDT60C -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -2.0 -
OCR Scan

LC1 DT60

Abstract: BDT60 BDT60;60A BDT60B;60C PHILIPS INTERNATIONAL SbE D â  TiioflEb 00143204 tu «PHIN T- 33- ? , MSAoeo-i August 1991 491 This Material Copyrighted By Its Respective Manufacturer BDT60;60A BDT60B , unless otherwise specified. BDT60;60A BDT60B;60C SbE D Collector cut-off current lE = 0; -VCB = , power transistors 1^33-31 BDT60;60A BDT60B;60C PHILIPS INTERNATIONAL 10 -'c (A) 10 -1 10 -2 , transistors 1^33-31 BDT60;60A BDT60B;60C PHILIPS INTERNATIONAL SbE D â  7110â2b 004321G =JT5 100
-
OCR Scan
IEC134 LC1 DT60 z825 0D43205 T-33-31 7Z82564
Abstract: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary , ) BDT60A BDT60B VALUE -60 V CBO -80 -100 BDT60C -60 BDT60A BDT60B V CEO BDT60C , REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT60, BDT60A, BDT60B , 150°C BDT60 -2.0 IE = 0 TC = 150°C BDT60A -2.0 IE = 0 TC = 150°C BDT60B , REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDT60, BDT60A, BDT60B Bourns
Original
Abstract: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary , BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , Specifications are subject to change without notice. BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER , -80 -100 BDT60C -60 BDT60A BDT60B V CEO BDT60C Emitter-base voltage V -120 , REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDT60, BDT60A, BDT60B Bourns
Original

T2D 22 diode

Abstract: T2D 56 DIODE BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power , August 1991 493 BDT60;60A BDT60B:60C y v . Fig. 3 Switching times waveforms. vcc â , transistors y v BDT60;60A BDT60B;60C Fig. 5 Safe Operating Area, T m(j = 25 °C. I II Region o , 495 BDT60;60A BDT60B;60C IQ " 5 1 0 -4 10~3 Fig. 7 Second-breakdown current , level. 10~2 BDT60;60A BDT60B;60C Silicon Darlington power transistors y v 0 50 100
-
OCR Scan
T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode A060-1

BDT60

Abstract: BDT60B BDT60;60A BDT60B;60C SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in , ^31 0034bbG â  BDT60;60A BDT60B;60C I- I â'"â'"|â'"c b 1 k : 1 -1 k : R1 typ. 6 , BDT60;60A BDT60B;60C CHARACTERISTICS Tj - 25 °C unless otherwise specified. Collector cut-off , 0G34bb3 OSfl â  Silicon Darlington power transistore BDT60;60A BDT60B;60C Fig. 5 Safe Operating Area , Copyrighted By Its Respective Manufacturer â  bb53
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OCR Scan
transistor d 1991 ar transistor 2TH kia 494 MSA060 7Z82561 S3T31 7Z88218

3DT60

Abstract: BDT61 . absolute maximum ratings at 25°C case temperature (unless otherwise noted) BDT60, BDT60A, BDT60B, BDT60C , BDT60B BDT60C VCBO -60 -80 -100 -120 V Collector-emitter voltage (lB = 0) BDT60 BDT60A BDT60B BDT60C , the rate of 16 mW/°C. BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS electrical , ) BDT60A BDT60B BDT60C -80 -100 -120 V vCE = -30 V lB = 0 BDT60 -0.5 'ceo Collector-emitter , °C Tq = 150°C BDT60C BDT60 BDT60A BDT60B BDT60C -0.2 -2.0 -2.0 -2.0 -2.0 mA 'ebo Emitter cut-off
-
OCR Scan
3DT60 BDV64 T0-220 BDV64A BDV64B BDV64C

dg432

Abstract: BDT60;60A BDT60B;60C PHILIPS INTERNATIONAL SbE T > 711002b 00432G4 bTl HIPHIN T- 33- ? , not tinned r " 2.54 2.54 -2 .4 MSA060-1 "V August 1991 491 BDT60;60A BDT60B , INTERNATIONAL CH AR ACT ER ISTICS Tj = 25 °C unless otherwise specified. SbE D BDT60;60A BDT60B:60C , jus; 8 < 2%. "V August-1991 493 BDT60;60A BDT60B:60C J 5bE D 711Dfl2b DDM32Q7 30D , . \ r 494 March 1986 Silicon Darlington power transistors BDT60;60A BDT60B;60C 5bE » 711DflSb
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OCR Scan
dg432 GQ432D5 7Z78130 DG4320 0043S10

BDT60C ST

Abstract: BDT60C I ONS 3-27 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS A U G U S T 1993 - R E , 0 lB = 0 O O Il II B O T 6O BDT60A BDT60B B D T6Ö C BDT60 BDT60A BDT60B BDT60C Tc = 150°C Tc s 1 5 0 , . 3-28 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS AU G U ST 1983 - R E V IS E D M A , NNOVATI ONS P 3-2 9 BDT60, BDT60A, BDT60B, BDT60C FNP SILICON POWER DARLINGTONS A U G U ST 1993 - , BDTBO, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARUNGTONS Copyright® 1997, Powet Innovations
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OCR Scan
BDT60C ST 150CC

philips BDV64A

Abstract: BDX67 1.5A/6mA _ BDT61 BDT61A BDT61B BDT61C BDT60 BDT60A BDT60B BDT60C TO-220AB 4A
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OCR Scan
BDX67 philips BDV64A 53T31 TIP110 TIP111 TIP112 TIP115 TIP116

philips BDV64A

Abstract: T1P121 BDT60 BDT60A BDT60B BDT60C TO-220AB 4A 60V 80V 100V 120V 750 at 1.5A 2.5V at 1.5A/6mA PNP = 1.5/JS NPN =
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OCR Scan
BDT63A T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR 2a 100v NPN TIP117 BD675 BD677 BD679 BD681 BD683

BDT60C

Abstract: BDT61A BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE
Bourns
Original
TCS110AB TCS110AC SAS110AB

BDT618

Abstract: BDT60C ST BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK_ AUG UST 1993 - REVISED M ARCH 1997 · · · · Designed for Complementary Use with BDT60, BOT6OA, BDT60B and BDT60C 50 W at 2S°C Case Temperature 4 A Continuous Collector Current Minimum hre of 7S0 at 1.5 V, 3 A TO-220 P A C K A G E (TOP VIEW) Pin 2 is In electrical contact wilt) the mounting base. M D T RACA absolute maximum ratings at 25°C case temperature (unless
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OCR Scan
BDT618 BOT61 8DT61 0DT61 3DT61
Abstract: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is obsolete and not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature Bourns
Original
Abstract: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is currently available, but not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 Bourns
Original
Abstract: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS G Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C G 50 W at 25°C Case Temperature G 4 A Continuous Collector Current G Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDT61 Collector-base -
Original

dg43550

Abstract: BDT61 BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE D I SILICON DARLINGTON POWER TRANSISTORS 711002b DG43550 ômVWphiN N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C. QUICK REFERENCE DATA BDT61 A B C Collector-base voltage (open emitter) vCBO max. 60 80 100 120 V Collector-emitter voltage (open base) vCEO max. 60 80 100 120 V Collector current (d.c.) â c max. 4 A
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OCR Scan
QGM3221 diagram DARLINGTON X-33-2 B2565 7Z82099

KU 612

Abstract: BTW 600 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDT60B V CBO -80 -100 BDT60C V -120 BDT60 Collector-emitter voltage (IB = 0) UNIT -60 BDT60 BDT60A VALUE -60 BDT60A BDT60B VCEO -80 -100 V , AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT60 , temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDT60 Collector-emitter
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OCR Scan
KU 612 BTW 600 btw 50 200 ts 435 RG612 BTW50-1200 TNF250

BDT61

Abstract: BDT60C BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ] > I 711002(3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C. QUICK REFERENCE DATA BDT61 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (d.c.) Collector current (peak value) Total power dissipation up to
Bourns
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5BE1

Abstract: Darlington NPN Silicon Diode BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is obsolete and not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature
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OCR Scan
5BE1 Darlington NPN Silicon Diode Q0M322S G04B527 B2097
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