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Part : BD899 Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 18 Best Price : $0.72 Price Each : $0.72
Part : BD899 Supplier : Bourns Manufacturer : Bristol Electronics Stock : 4,310 Best Price : $0.2925 Price Each : $1.1250
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BD899A Datasheet

Part Manufacturer Description PDF Type
BD899A Bourns NPN SILICON POWER DARLINGTONS Original
BD899A Power Innovations NPN SILICON POWER DARLINGTONS Original
BD899A General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Scan
BD899A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD899A Motorola European Master Selection Guide 1986 Scan
BD899A N/A Cross Reference Datasheet Scan
BD899A N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD899A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BD899A N/A Shortform Transistor Datasheet Guide Scan
BD899A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BD899A National Semiconductor Shortform National Semiconductor Datasheet Scan
BD899A National Semiconductor PRO ELECTRON SERIES - JFET Scan
BD899A Texas Instruments 80 V, 8 A, 70 W, NPN silicon power darlington Scan
BD899A-S Bourns NPN DARLINGTON 80V 8A Original

BD899A

Catalog Datasheet MFG & Type PDF Document Tags

C03GE

Abstract: BD901 "2.°! _;_uanington Power Transistors File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A , (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: â , VIEW IUi-S»ll JEDEC TO-220AB The RCA-BD895, BD895A, BD897, BD897A, BD899, BD899A, and BD901 are , ) from casa for 10 s max. BD897 BD8S7A 60 60 BD899 BD899A 80 80 , , BD899, BD899A, BD901 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc = 25°C Unless Otherwise
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BD896 C03GE BD597 case BD901 I/BD899 darlington series bd 0Q17577 45-60-80-100-V TQ-220AB 92CS-32690
Abstract: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with , otherwise noted) RATING SYMBOL BD897A V CBO V CEO 60 V 80 BD899A Emitter-base voltage V 45 BD895A BD897A 60 80 BD899A Collector-emitter voltage (IB = 0) UNIT 45 , change without notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical , BD899A IC = 100 mA TYP 80 V VCE(sat) VBE(on) VEC 0.5 BD897A 0.5 VCE = 40 V Bourns
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BD896A BD898A BD900A TCS130AB TCS130AC SAS130AE

BD895A

Abstract: BD896A BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Designed for Complementary Use with , (unless otherwise noted) RATING SYMBOL BD897A V CBO BD895A BD897A 60 V 80 BD899A , BD899A 60 V 80 VEBO 5 Continuous collector current IC 8 A Continuous base , notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , TEST CONDITIONS MIN BD895A IB = 0 BD897A (see Note 3) MAX 60 BD899A IC = 100
Bourns
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S130AB
Abstract: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , BD895A Collector-base voltage ( lE = 0) BD897A BD899A BD895A Collector-em itter voltage ( lB = 0) BD897A BD899A Em itter-base voltage Continuous collector current Continuous base current Continuous device , not necessarily include testing of all parameters. BD895A, BD897A, BD899A NPN SILICON POWER , (see Note 3) BD897A BD899A CD MIN 45 60 80 TYP MAX UNIT breakdown voltage V -
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BD895A

Abstract: BD896A BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited , 60 V 80 BD895A BD897A UNIT 45 BD899A Collector-emitter voltage (IB = 0) VALUE 45 VCEO BD899A 60 V 80 V EBO 5 V Continuous collector current IC 8 A , include testing of all parameters. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS AUGUST , BD895A IB = 0 (see Note 3) BD897A MAX 60 BD899A IC = 100 mA TYP 80 V
Power Innovations
Original
Abstract: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with , noted) RATING SYMBOL BD897A V CBO E T E L O S B O BD899A BD895A Collector-emitter voltage (IB = 0) BD897A V CEO BD899A Emitter-base voltage UNIT 45 BD895A , Specifications are subject to change without notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER , (see Note 3) MAX 60 BD899A IC = 100 mA TYP 80 V V CE(sat) VBE(on) VEC 0.5 Bourns
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TIS130AB

BD897

Abstract: BD901 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1984 , BD899A BD901 Collector-base voltage 45 V 60 V 80 V 100V Collector-emitter voltage {I3 = 0) 45 V 60 V 80 , BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS 62c 3&600 , ) PARAMETER TEST CONDITIONS BD899, BD899A BD901 UNIT MIN TYP MAX MIN TYP MAX V|BRICEO ic = 100 mA, ìb , and 4 BD 899, BD901 750 750 VCE = 3 V, lC = 4 A, See Notes 3 and 4 BD899A 750 VÃE(on) VCE = 3V
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1N914 D03bt T-33-29

BD895A

Abstract: BD896A BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Designed for Complementary Use with , (unless otherwise noted) RATING SYMBOL BD897A V CBO BD895A BD897A 60 V 80 BD899A , BD899A 60 V 80 VEBO 5 Continuous collector current IC 8 A Continuous base , notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , TEST CONDITIONS MIN BD895A IB = 0 BD897A (see Note 3) MAX 60 BD899A IC = 100
Bourns
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BD901

Abstract: BD899 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON]) S E CT OR SbE D File , A (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications , BD89S, BD645, BD895A, BDS97, BD897A, BD899, BD899A, and BD901 are m onolithic silicon n-p-n Darling ton , . BD897 BD897A 60 60 - 5 BD899 BD899A 80 80 BD901 - 100 100 V V V A A W W/°C ·C VCEO(sus , . BD895A, BD897, BD897A, BD899, BD899A, BD901 HARRIS SEIUCOND SECTOR SbE ]> 4302271 004 0bflb 177 H H A S
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220AB BD89SA BDB95

case BD901

Abstract: BD901 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 File Number 1240 8-Ampere N-P-N , (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: 9 2 C S , , BD899A, and BD901 are m onolithic silicon n-p-n Darling ton transistors designed fo r low and m edium , VEBO. 45 45 BD897 BD897A 60 60 - 5 . 8 0.1 BD899 BD899A 80 80 BD901 - 100 100 'c , 150 - 235 °C 2-263 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 E L E C T R IC A
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Abstract: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations limited , Collector-base voltage (!g = 0} BD895A BD897A BD899A SYMBOL VALUE 45 60 SO 45 60 60 5 8 0.3 70 2 -65 to , linearly to 150°C {ree air temperature at thè rate of 16 mW/°C. Pw Ptoi Ta Ti ^slg BDS97A BD899A VE80 h V , , BD899A NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 e le c tric a l c h a ra c te , CONDITIONS BD895A »8=0 !a = 0 la =0 la = 0 !e = MIN 45 60 80 BD897A BD899A BD395A BD897A 8DB99A B0895A -
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B0898A T1S130A

BD897A

Abstract: BD895A Collector-base voltage BD897A VALUE 45 Open emitter 60 BD899A Collector-emitter voltage 45 BD897A Open base BD899A VEBO Emitter-base voltage IC Base current PT 60 V 80 , TYP. MAX UNIT 45 IC=100mA, IB=0 V 60 80 BD899A VCEsat MIN V Base-emitter , VCE=30V, IB=0 BD899A ICEO 2.8 BD899A ICBO IC=4A ,IB=16mA BD895A VBE
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BD895A/897A/899A BD896A/898A/900A

BD895A

Abstract: BD897A V 80 Base current PT 60 80 Collector current-DC IB UNIT 45 BD899A BD899A VEBO VALUE Open collector 5 V 8 A 300 mA Total power dissipation TC , =0 BD899A VCEsat MIN V 60 80 2.8 V IC=4A ; VCE=3V 2.5 V BD895A VCB=45V, IE=0 TC=100 0.2 2.0 BD897A VCB=60V, IE=0 TC=100 0.2 2.0 BD899A VCB=80V, IE=0 TC=100 0.2 2.0 BD895A VCE=30V, IB=0 BD897A VCE=30V, IB=0 BD899A VCE=40V, IB=0 Collector
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D895

Abstract: BD 895 > 62C 3 6 5 9 9 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS , BD899 BD899A 80 V 80 V BD901 100V 100V Collector-emitter voltage (Ib = 0 ) Emitter-base voltage , , BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS electrical characteristics , , BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARUNGTONS thermal characteristics , , BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS S TA TIC FORW ARD
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D895 BD 895 bdw 34 a

D895

Abstract: transistor Bd 699 MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | MOTOROLA TECHNICAL DATA SEMICONDUCTOR BD895, BD895A BD897, BD897A BD899, BD899A BD901 DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS 45-60-80-100 V O L T S 70 W ATTS PLASTIC POWER SILICON NPN DARLINGTONS . for use as output , , 699A, 701. M A X IM U M R A TIN G S BD895 BD899 Symbol BD895A BD897 BD899A BD897A V C EO VC B veb , GüaM7bb 1 | BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 T-33-29 E L E C T R IC A L C H A R A
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BD695A transistor Bd 699 transistor BD901 D-897 bd897 motorola BDS95A AN-415
Abstract: BD899A Transistors NPN Darlington Transistor Military/High-RelN V(BR)CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain. @I(C) (A) (Test Condition)4.0 @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq1.0M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test American Microsemiconductor
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BDX53D

Abstract: D45VH4 1 Baza/Base 2 Kolektor/Collector 3 Emitor/Emitter J0,7maks 5,2mgks Sl./Fig. 60 Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type Uceo lo Ptoi hfE pri/at le fi Si./ NPN PNP (V) . (A) ' m min/maks (A) (MHz) Fig. 2N6044 2N6041 80 â'¢:'â'¢- 8 â'¢â'¢ 75 1k/l0k 4 4 TIP101 TIP106 ¿v â  80 1k/20k 3 4 BDX53B BDX54B . 60 750 min 3 TIP131 TIP136 -â'¢ :.: 70 1k/15k 4 BD899 BD900 - i - " ^ . - i - 70 750 min 3 BD899A BD900A â'¢ ., '. -'- "70 750 min 4
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BDX53D D44H5 BD807 D44E3 SE9302 BUS36 D45VH4 bdw41 BDX53C BDX54C TIP132 TIP137 BD902 2N6045

BOX53C

Abstract: box54c min 3 70 BD899A BD900A 750 min 4 70 100 BDX53C BDX54C 750 min 3 60 TIP132 TIP137
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2N6386 BOX53C box54c BOX33C box53b transistor box54c box53a BDX53 BDX54 BDX53A BDX54A TIP130

BD895A

Abstract: BD896A BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BD895A, BD897A and BD899A 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD898A V CBO BD896A BD898A -60 V -80 BD900A
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r3673

Abstract: Y1031 BD744C BD744C-S BD897A BD897A-S BD898 BD898-S BD899 BD899A BD899A-S BD899-S BD900 BD900-S
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TIP43 Y1031 r3673 TIC106D Thyristor r3673 Philippines R3672 BLBF39 MP150SG KTMC-1030NAP E106817 TIP122-S TIP125

BDX538

Abstract: TP121 1 Baza/Base 2 Kolektor/Collector 3 Emitor/Emitter J0,7maks 5,2mgks Sl./Fig. 60 Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type Uceo lo Ptoi hfE pri/at le fi Si./ NPN PNP (V) . (A) ' m min/maks (A) (MHz) Fig. 2N6044 2N6041 80 â'¢:'â'¢- 8 â'¢â'¢ 75 1k/l0k 4 4 TIP101 TIP106 ¿v â  80 1k/20k 3 4 BDX53B BDX54B . 60 750 min 3 TIP131 TIP136 -â'¢ :.: 70 1k/15k 4 BD899 BD900 - i - " ^ . - i - 70 750 min 3 BD899A BD900A â'¢ ., '. -'- "70 750 min 4
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2N6385 2N6650 2N6383 BDX83 2N6055 2N6384 BDX538 TP121 2N6056 000S733

TIC106M SCR

Abstract: TIC106D equivalent min 3 70 BD899A BD900A 750 min 4 70 100 BDX53C BDX54C 750 min 3 60 TIP132 TIP137
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TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP30C BD240C TIPP32C BD242B BD242C TIP32B
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